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DOE OSTI2025

Observation of interface piezoelectricity in superconducting devices on silicon

The development of superconducting quantum processors relies on understanding and mitigating decoherence in superconducting qubits. Piezoelectric coupling contributes to decoherence by mediating energy exchange between microwave photons and acoustic phonons. Although bulk centrosymmetric materials like silicon and sapphire are non-piezoelectric and commonly used as qubit substrates, the lack of centrosymmetry at interfaces may induce piezoelectric losses. This effect was predicted decades ago but never experimentally observed in superconducting devices. Here, we report interface piezoelectricity at aluminum-silicon junctions and demonstrate it as a significant loss channel in superconducting devices. Using aluminum interdigital transducers on silicon, we observe piezoelectric transduction from room to millikelvin temperatures, with an effective electromechanical coupling factor K 2 ≈ (3 ± 0.4) × 10−5%, comparable to weakly piezoelectric substrates. Modeling shows this mechanism limits qubit quality factors to Q ~ 10 4 − 10 8 , depending on surface participation and mode matching. These findings reveal interface piezoelectricity as a major dissipation channel and highlight the need for heterostructure and phononic engineering in next-generation superconducting qubits.

Zhou, Haoxin [University of California, Berkeley, ↗

DOE OSTI2024

An antiferromagnetic diode effect in even-layered MnBi 2 Te 4

In a p–n junction, the separation of positive and negative charges leads to diode transport, in which charge flows in only one direction. Non-centrosymmetric polar conductors are intrinsic diodes that could be of use in the development of nonlinear applications. Such systems have recently been extended to non-centrosymmetric superconductors, and the superconducting diode effect has been observed. Here, in this paper, we report an antiferromagnetic diode effect in a centrosymmetric crystal without directional charge separation. We observed large second-harmonic transport in a nonlinear electronic device enabled by the compensated antiferromagnetic state of even-layered MnBi 2 Te 4 . We show that this antiferromagnetic diode effect can be used to create in-plane field-effect transistors and microwave-energy-harvesting devices. We also show that electrical sum-frequency generation can be used as a tool to detect nonlinear responses in quantum materials.

electronic properties and materials↗

DOE OSTI2020

High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth

We demonstrate a superluminescent diode fabricated on a nonpolar m-plane GaN substrate by employing a linearly tapered waveguide design. A high electrical -3dB modulation bandwidth ( f\n 3dB \n) of 2.5 GHz at a current density of 30 kA/cm\n 2 \n is achieved. The high modulation bandwidth is attributed to the shorter carrier recombination lifetime, the linear gain curve in the nonpolar m-plane quantum wells, and the ability to operate at high current densities while effectively suppressing lasing. We derive a general expression for the -3dB bandwidth as a function of current density for SLDs using a similar approach to that for laser diodes. The -3dB bandwidth of a nonpolar superluminescent diode increases exponentially with current density. The experimental results are consistent with the derived expression for f\n 3dB \n vs. current density.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2021

Optical transient grating pumped X-ray diffraction microscopy for studying mesoscale structural dynamics

Abstract A fundamental understanding of materials’ structural dynamics, with fine spatial and temporal control, underpins future developments in electronic and quantum materials. Here, we introduce an optical transient grating pump and focused X-ray diffraction probe technique (TGXD) to examine the structural evolution of materials excited by modulated light with a precisely controlled spatial profile. This method adds spatial resolution and direct structural sensitivity to the established utility of a sinusoidal transient-grating excitation. We demonstrate TGXD using two thin-film samples: epitaxial BiFeO 3 , which exhibits a photoinduced strain (structural grating) with an amplitude proportional to the optical fluence, and FeRh, which undergoes a magnetostructural phase transformation. In BiFeO 3 , structural relaxation is location independent, and the strain persists on the order of microseconds, consistent with the optical excitation of long-lived charge carriers. The strain profile of the structural grating in FeRh, in comparison, deviates from the sinusoidal excitation and exhibits both higher-order spatial frequencies and a location-dependent relaxation. The focused X-ray probe provides spatial resolution within the engineered optical excitation profile, resolving the spatiotemporal flow of heat through FeRh locally heated above the phase transition temperature. TGXD successfully characterizes mesoscopic energy transport in functional materials without relying on a specific transport model.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Disentangling the impact of quasiparticles and two-level systems on the statistics of superconducting-qubit lifetime

Temporal fluctuations in the superconducting qubit lifetime, T 1 , present additional challenges in the pursuit of fault-tolerant quantum computing. Although the exact mechanisms remain unclear, T 1 fluctuations are generally attributed to strong coupling between the qubit and a few near-resonant two-level systems (TLSs), which can exchange energy with an ensemble of thermally fluctuating two-level fluctuators (TLFs) at low frequencies. Here, we report T 1 measurements of qubits with varying geometrical footprints and surface dielectrics as a function of temperature. By analyzing the noise spectrum of the qubit depolarization rate, Γ 1 = 1 / T 1 , we disentangle the contributions of TLSs, nonequilibrium quasiparticles (QPs), and equilibrium (thermally excited) QPs to the variance in Γ 1 . We find that the Γ 1 variance in qubits with smaller footprints is more susceptible to QP and TLS fluctuations than that in larger-footprint qubits. Furthermore, the QP-induced variances in all qubits align with the theoretical framework of QP diffusion and fluctuation. These findings offer valuable insights for future qubit design and engineering optimization.

Zhu, Shaojiang [Fermilab] (ORCID:0000000293180092)↗

DOE OSTI2023

Comparative study of adaptive variational quantum eigensolvers for multi-orbital impurity models

Hybrid quantum-classical embedding methods for correlated materials simulations provide a path towards potential quantum advantage. However, the required quantum resources arising from the multi-band nature of d and f electron materials remain largely unexplored. Here we compare the performance of different variational quantum eigensolvers in ground state preparation for interacting multi-orbital embedding impurity models, which is the computationally most demanding step in quantum embedding theories. Focusing on adaptive algorithms and models with 8 spin-orbitals, we show that state preparation with fidelities better than 99.9% can be achieved using about 2 14 shots per measurement circuit. When including gate noise, we observe that parameter optimizations can still be performed if the two-qubit gate error lies below 10 -3 , which is slightly smaller than current hardware levels. Finally, we measure the ground state energy on IBM and Quantinuum hardware using a converged adaptive ansatz and obtain a relative error of 0.7%.

42 ENGINEERING↗

DOE OSTI2024

SMATool: Strength of materials analysis toolkit

The study of the strength of materials is a cornerstone in material science and engineering, playing a critical role in shaping the progress and application of materials in diverse industrial sectors. The strength of a material is meticulously examined to understand the behavior of the material under different stress conditions and environments, thereby guiding material selection and structural design. Herein, we introduce the SMATool, a computational toolkit for the efficient calculation and analysis of material strength at both zero and finite temperatures for 3D, 2D, 1D, and tubular 2D-based nanostructures and nanotubes, as well as 1D nanoribbons. The toolkit is capable of calculating tensile, shear, ultimate, yield, and indentation (Vickers' hardness) strengths in various dimensions, as well as the energy storage capacity. We conducted several calculations both at zero and finite temperatures to validate the accuracy and reliability of the developed software. Here, the results show that the SMATool package provides accurate predictions that align with existing data on material strength. SMATool integrates seamlessly with widely used electronic structure codes like VASP and Quantum Espresso, providing a user-friendly interface catering to academic researchers and industry professionals.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Why Boron Nitride is such a Selective Catalyst for the Oxidative Dehydrogenation of Propane

Boron–containing materials, and in particular boron nitride, have recently been identified as highly selective catalysts for the oxidative dehydrogenation of alkanes such as propane. To date, no mechanism exists that can explain both the unprecedented selectivity, the observed surface oxyfunctionalization, and the peculiar kinetic features of this reaction. Here, we combine catalytic activity measurements with quantum chemical calculations to put forward a bold new hypothesis. We argue that the remarkable product distribution can be rationalized by a combination of surface–mediated formation of radicals over metastable sites, and their sequential propagation in the gas phase. Based on known radical propagation steps, we quantitatively describe the oxygen pressure–dependent relative formation of the main product propylene and by–product ethylene. Free radical intermediates most likely differentiate this catalytic system from less selective vanadium–based catalysts.

03 NATURAL GAS↗

DOE OSTI2023

Ion-beam-assisted growth of cesium-antimonide photocathodes

We report on the novel use of a Cs+ ion gun for an ion-beam-assisted molecular-beam-epitaxy (IBA-MBE) method to sequentially deposit Cs-Sb cathodes on room temperature substrates as opposed to the standard technique of thermal evaporation on elevated-temperature substrates. The details of the ultrahigh-vacuum chamber, the Cs+ ion source, and the growth technique are elaborated. The final quantum efficiency (QE) is reasonably good for Cs-Sb cathodes grown on two different substrates—Si (100) and strontium titanate—and is comparable to the QE of cathodes grown using thermal sources. This suggests that IBA-MBE could be a viable alternative to grow alkali-antimonides without substrate heating, paving the way for the growth of epitaxial alkali-antimonides in a more reproducible fashion, which may help improve the efficiency of photon detectors and accelerator applications that use alkali-antimonides as electron sources.

Engineering↗

DOE OSTI2022

Through the Lens of a Momentum Microscope: Viewing Light-Induced Quantum Phenomena in 2D Materials

Van der Waals (vdW) materials at their 2D limit are diverse, flexible, and unique laboratories to study fundamental quantum phenomena and their future applications. Their novel properties rely on their pronounced Coulomb interactions, variety of crystal symmetries and spin-physics, and the ease of incorporation of different vdW materials to form sophisticated heterostructures. In particular, the excited state properties of many 2D semiconductors and semi-metals are relevant for their technological applications, particularly those that can be induced by light. In this paper, the recent advances made in studying out-of-equilibrium, light-induced, phenomena in these materials are reviewed using powerful, surface-sensitive, time-resolved photoemission-based techniques, with a particular emphasis on the emerging multi-dimensional photoemission spectroscopy technique of time-resolved momentum microscopy. The advances this technique has enabled in studying the nature and dynamics of occupied excited states in these materials are discussed. Then, the future research directions opened by these scientific and instrumental advancements are projected for studying the physics of 2D materials and the opportunities to engineer their band-structure and band-topology by laser fields.

2D materials↗

DOE OSTI2021

Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. Furthermore, this work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.

42 ENGINEERING↗

DOE OSTI2022

Tunable, Homoepitaxial Hyperbolic Metamaterials Enabled by High Mobility CdO

We report propagating light exhibits hyperbolicity in strongly anisotropic materials where the principal components of the dielectric tensor are opposite in sign. While hyperbolicity occurs naturally in anisotropic polar dielectrics, wherein optical phonons along orthogonal crystal axes are nondegenerate, such optical anisotropy can also be engineered in hyperbolic metamaterials (HMMs): thin film superlattices of alternating dielectric and metallic layers. Contrasted with the severely limited tunability of natural hyperbolic materials, the hyperbolic behavior of HMMs can be tailored significantly both through superlattice design and material selection. However, so far HMMs have suffered from high optical losses, hindering their performance. In this report, broadly tunable (λ = 2–5 µm) Type I and II hyperbolic modes with low losses (quality (Q)-factors up to 19.7) are observed through attenuated total reflectance measurements of monolithic, homoepitaxial superlattices of high- and low-doped cadmium oxide (CdO). Further, the low losses offered by CdO enable the first demonstration of real-space imaging of hyperbolic plasmon polaritons in nanoresonators by scattering-type scanning near-field optical microscopy—previously only possible for hyperbolic phonon polariton materials. Tunable, low-loss CdO HMMs promise designability for applications such as on-chip photonics, super-resolution imaging (hyperlensing), enhanced emission, novel emitter designs, and possibly quantum nanophotonic and time variant metasurfaces.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Band-limited photodetection of temporal coherence

The quantum theory of optical coherence plays a ubiquitous role in identifying optical emitters. An unequivocal identification, however, presumes that the photon number statistics is resolved from timing uncertainties. We demonstrate from first principle that the observed nth-order temporal coherence is a n-fold convolution of the instrument responses and the expected coherence. The consequence is detrimental in which the photon number statistics is masked from the unresolved coherence signatures. The experimental investigations are thus far consistent with the theory developed. We envision the present theory will mitigate the false identification of optical emitters and enlarge the coherence deconvolution to an arbitrary order.

42 ENGINEERING↗

NASA NTRS2017

An Overview of the Design and Development of the Geostationary Operational Environmental Satellite R-Series (GOES-R) Space Segment

The first of the National Oceanic and Atmospheric Administration (NOAA) Geostationary Operational Environmental Satellite R-series (GOES-R) satellites was launched in November 2016. GOES-R has been developed by NOAA in partnership with the National Aeronautics and Space Administration (NASA). The satellite represents a quantum leap in the state of the art for geostationary weather satellites by providing data from a suite of six new instruments. All instruments were developed expressly for this mission, and include two Earth-observing instruments (the Advanced Baseline Imager (ABI) and Geostationary Lightning Mapper (GLM)), two solar-viewing instruments (Solar Ultraviolet Imager (SUVI) and Extreme ultraviolet and X-ray Irradiance Sensors (EXIS)) and two in situ instruments (Space Environment In-Situ Suite (SEISS) and a magnetometer pair). In addition to hosting the instruments, GOES-R also accommodates several communication packages designed to collect and relay data for weather forecasting and emergency management. Accommodating the six instruments and four communication payloads imposed challenging and competing constraints on the satellite, including requirements for extremely stable earth and solar pointing, high-speed and nearly error-free instrument data transmission, and a very quiet electromagnetic background. To meet mission needs, GOES-R employed several technological innovations, including low-thrust rocket engines that allow instrument observations to continue during maneuvers, and the first civilian use of Global Positioning System-based orbit determination in geostationary orbit. This paper will provide a brief overview of the GOES-R satellite and its instruments as well as the developmental challenges involved in accommodating the instruments and communications payloads.

SUVI↗

NASA NTRS2017

An Overview of the Design and Development of the GOES R-Series Space Segment

GOES-16↗

DOE OSTI2021

Multi-physics Peridynamic Modeling of Damage Processes in Protective Coatings

Protective coatings can revolutionize the aerospace industry by providing a way to build a fuel-efficient and low-emission gas turbine engine operating at elevated temperature. Currently, significant challenges persist in the multi-physics modeling of damage processes in protective coatings exposed to the hot corrosive environment of gas turbine engine. Examples of such detrimental processes include an interface damage between different material layers forming protective coating, a formation of the through-the-thickness vertical cracks, a diffusion of oxygen and moisture through those cracks, an oxidation, and a delamination. In this paper, a feasibility of a multi-physics peridynamic model to provide insight to these detrimental processes has been demonstrated. 3-Dimensional peridynamic equations which are valid everywhere, including dynamically evolving discontinuities, have been presented. In conclusion, validation and demonstration have been shown for conduction heat transfer, reactive oxidation, and delamination of protective coating with a composition borrowed from the open literature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Direct time-resolved detection and quantification of key reactive intermediates in diethyl ether oxidation at T = 450–600 K

High-pressure multiplexed photoionization mass spectrometry (MPIMS) with tunable vacuum ultraviolet (VUV) ionization radiation from the Lawrence Berkeley Labs Advanced Light Source is used to investigate the oxidation of diethyl ether (DEE). Kinetics and photoionization (PI) spectra are simultaneously measured for the species formed. Several stable products from DEE oxidation are identified and quantified using reference PI cross-sections. In addition, we directly detect and quantify three key chemical intermediates: peroxy (ROO˙), hydroperoxyalkyl peroxy (˙OOQOOH), and ketohydroperoxide (HOOP[double bond, length as m-dash]O, KHP). These intermediates undergo dissociative ionization (DI) into smaller fragments, making their identification by mass spectrometry challenging. Furthermore, with the aid of quantum chemical calculations, we identify the DI channels of these key chemical species and quantify their time-resolved concentrations from the overall carbon atom balance at T = 450 K and P = 7500 torr. This allows the determination of the absolute PI cross-sections of ROO˙, ˙OOQOOH, and KHP into each DI channel directly from experiment. The PI cross-sections in turn enable the quantification of ROO˙, ˙OOQOOH, and KHP from DEE oxidation over a range of experimental conditions that reveal the effects of pressure, O 2 concentration, and temperature on the competition among radical decomposition and second O 2 addition pathways.

42 ENGINEERING↗

DOE OSTI2020

Post-growth modulation doping by ion implantation

Modulation doping is a commonly adopted technique to create two-dimensional (2D) electrons or holes in semiconductor heterostructures. One constraint, however, is that the intentional dopants required for modulation doping are controlled and incorporated during the growth of heterostructures. Here, using undoped strained germanium quantum wells as the model material system, we show that modulation doping can be achieved post-growth of heterostructures by ion implantation and dopant-activation anneals. The carrier density is controlled ex situ by varying the ion fluence and implant energy, and an empirical calibration curve is obtained. While the mobility of the resulting 2D holes is lower than that in undoped heterostructure field-effect transistors built using the same material, the achievable carrier density is significantly higher. Potential applications of this modulation-doping technique are discussed.

42 ENGINEERING↗