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At least 1,549 records · Page 86

Laser-induced-fluorescence imaging of a spin-polarized ultracold neutral plasma in a magnetic field

In this work, we report Doppler-sensitive laser-induced-fluorescence (LIF) imaging of an ultracold neutral plasma in a magnetic field. Local values of ion density, hydrodynamic fluid velocity, temperature, and spin polarization are obtained using a fluorescence model based on velocity-resolved rate equations (REs) including the transfer of ions between states due to laser coupling and spontaneous emission. The RE approach captures optical pumping of ions into states that are not driven by the LIF excitation laser, and this is validated with experimental data. Combined molecular-dynamics and quantum-trajectories simulations verify that velocity-changing collisions have a negligible impact on the state population evolution for typical experimental conditions. Relative intensities of Zeeman components of the LIF spectra provide clear evidence that the ions are electron-spin-polarized when created by photoionization of magnetically trapped 88 Sr atoms. This probe opens many possibilities for studying thermal transport and the equilibration of neutral plasmas in overlapping regimes of strong coupling and magnetization.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Fragment-based initialization for quantum subspace methods

Here, we present a novel quantum-classical algorithm called LAS-QKSD for multireference systems, by combining a classical localized active space (LAS) fragment-based multireference algorithm with the quantum Krylov subspace diagonalization (QKSD) method for quantum computers. The algorithm uses wave function information from a LAS self-consistent field (LASSCF) calculation to prepare an initial state with better overlap with the target ground state than the Hartree-Fock state. This is coupled with the use of QKSD to ultimately converge to the exact energy, providing faster convergence than starting from the Hartree-Fock state. Fragmentation has the two-fold benefit of fewer configurations on the classical side of the algorithm as well as fewer state preparation gates on the quantum side. First, we compare the LAS-QKSD method to the classical LASSCF method and to QKSD with a Hartree-Fock initial state. We then examine ways to load the LASSCF wave function using direct initialization and a QKSD-motivated spectral filtering approach. Finally, using a bimetallic complex, we show that the LAS-QKSD method is an efficient alternative to highly expensive complete active space SCF (CASSCF) calculations on strongly correlated systems.

D'Cunha, Ruhee↗

Observation and origin of multi-THz quantum beats in superfluorescent emission from argon

We report observation of multi-THz quantum beats in the amplitude of superfluorescence in pure argon gas, using a time delayed 780-nm probe beam that interrogates the relevant population densities. The superfluorescence is induced by three-photon absorption of an ultrashort 260.5-nm laser pulse that creates coherent and coupled populations in multiple closely spaced 3⁢d and 5⁢s Ar levels. Argon pressure and pump laser focusing parameters are seen to modify the frequency of the quantum beats, which is attributed to the absorption of the self-generated, nonresonant third harmonic of the pump from Ar near the zero of the real part of the overlapping linear susceptibilities of the closely spaced 3⁢d and 5⁢s excited states. The self-absorption of the phase-matched THG photons creates a coherent population of atoms which acts like an atomic excited state (3⁢ω-induced state). Furthermore, we have also observed a new two-step superfluorescent cascade that results from the population redistribution enabled by the 780-nm probe pulse between the 3⁢d'[5/2] 3 and the 3⁢ω-induced state and gives rise to a previously unknown transition that emits on 1587 nm.

74 ATOMIC AND MOLECULAR PHYSICS↗

Two-color x-ray free-electron laser by photocathode laser emittance spoiler

Multispectral x-ray pump-probe experiments call for synchronized two-color free-electron lasers (FEL). This mode often implies a laborious setup or an inefficient use of the undulator. We report on a simple and noninvasive approach tested at SwissFEL for a two-color x-ray delivering almost 60% of the pulse energy compared with a single color. In this new method, a ps UV pulse is overlapped to the photocathode drive laser increasing the beam emittance, which locally inhibits the FEL process. This scheme permits high-stability in energy and spectrum and the control of the two-color duration and intensity ratio. It enables shot-to-shot switching between one and two-color FEL and, since not associate to beam losses, it is compatible with high repetition-rate and high average-power FELs.

43 PARTICLE ACCELERATORS↗

X-ray diagnostics for the cavity-based x-ray free-electron laser project

The success of x-ray free-electron lasers (XFELs) in recent years has greatly advanced many scientific fields. However, most of these XFELs suffer from a low longitudinal coherence and instabilities due to the stochastic start-up process. A cavity-based x-ray free-electron laser (CBXFEL) is a possible future direction in the development of fully coherent and stable x-ray sources. One of the challenges of a CBXFEL is the requirement for the μ⁢m−sized electron bunches to fully overlap in three dimensions with the circulating μ⁢m−sized x-ray pulses in an x-ray cavity tens or hundreds of meters long. We present here the development of an x-ray diagnostics system for accurate alignment of x-ray beams in the CBXFEL cavity. The system was developed within the framework of a CBXFEL research and development collaboration among Argonne National Laboratory, SLAC National Accelerator Laboratory, and Spring-8. All the designed diagnostic components have been fully characterized at the Advanced Photon Source to demonstrate a capability for sub-μ⁢rad angular and μ⁢m spatial alignment of the CBXFEL cavity.

Free-electron lasers↗

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum Emitter Formation Dynamics and Probing of Radiation-Induced Atomic Disorder in Silicon

Near-infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical-access quantum memories, and sensing. We access ensemble G-color-center formation dynamics and radiation-induced atomic disorder in silicon for a series of megaelectronvolt proton-flux conditions. The photoluminescence results reveal that the G centers are formed more efficiently by pulsed-proton irradiation than by continuous-wave proton irradiation. The enhanced transient excitations and dynamic annealing within nanoseconds allows optimization of the ratio of G-center formation to nonradiative defect accumulation. The G centers preserve narrow line widths of about 0.1 nm when they are generated by moderate pulsed-proton fluences, while the line width broadens significantly as the pulsed-proton fluence increases. This implies vacancy or interstitial clustering by overlapping collision cascades. The tracking of G-center properties for a series of irradiation conditions enables sensitive probing of atomic disorder, serving as a complementary analytical method for sensing damage accumulation. Aided by ab initio electronic structure calculations, we provide insight into the atomic disorder induced inhomogeneous broadening by introducing vacancies, silicon interstitials, and oriented strain fields in the vicinity of a G center. A vacancy leads to a tensile strain and can result in either a red shift or a blue shift of the G-center emission, depending on its position relative to the G center. Meanwhile, Si interstitials lead to compressive strain, which results in a monotonic red shift. In conclusion, high-flux and tunable ion pulses enable the exploration of the fundamental dynamics of radiation-induced defects as well as methods for the optimization of G-center formation and qubit synthesis for quantum information processing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Self-assembled reconfigurable pump architectures via magnetic colloidal swarms

Self-assembled swarms of interactive active units, which are adaptive and dynamically reconfigurable to accommodate different functionalities, represent a promising platform for the development of next-generation robotics. Here, we utilize the emergent collective behavior of active magnetic colloids confined in quasi-two-dimensional arrays of overlapping wells to demonstrate the self-organization of a colloidal swarm into a dynamic pump architecture capable of controlled transport of passive cargo particles. This dynamic architecture provides a global unidirectional looping flow pattern along the entire length of the system. We show that the flow direction of the dynamic swarm-based pump can be externally controlled by a phase shift of a driving magnetic field energizing the swarm. The experimental observations are supported by computational modeling based on phenomenological coarse-grained particle dynamics coupled to shallow-water Navier-Stokes hydrodynamics. In conclusion, our findings demonstrate how the emergent collective behavior of a swarm can be orchestrated into a desired functionality by exploiting the interplay between activity and confinement potentials.

36 MATERIALS SCIENCE↗

Low-phase-noise surface-acoustic-wave oscillator using an edge mode of a phononic band gap

Low-phase-noise microwave-frequency integrated oscillators provide compact solutions for various applications in signal processing, communications, and sensing. Surface acoustic waves (SAWs), featuring orders-of-magnitude shorter wavelength than electromagnetic waves at the same frequency, enable integrated microwave-frequency systems with much smaller footprint on chip. SAW devices also allow higher-quality (Q) factors than electronic components at room temperature. Here, we demonstrate a low-phase-noise gigahertz-frequency SAW oscillator on 128°Y-cut lithium niobate, where the SAW resonator occupies a footprint of 0.05 mm 2 . Leveraging phononic crystal band-gap-edge modes to balance between Q factors and insertion losses, our 1-GHz SAW oscillator features a low phase noise of -132.5 dBc/Hz at a 10-kHz offset frequency and an overlapping Hadamard deviation of 6.5 × 10 -10 at an analysis time of 64 ms. The SAW resonator-based oscillator holds high potential in developing low-noise sensors and acousto-optic integrated circuits.

42 ENGINEERING↗

Charge density waves on a half-filled decorated honeycomb lattice

Tight binding models like the Hubbard Hamiltonian are most often explored in the context of uniform intersite hopping $\textit{t}$. The electron-electron interactions, if sufficiently large compared to this translationally invariant $\textit{t}$, can give rise to ordered magnetic phases and Mott insulator transitions, especially at commensurate filling. The more complex situation of nonuniform $\textit{t}$ has been studied within a number of situations, perhaps most prominently in multiband geometries where there is a natural distinction of hopping between orbitals of different degree of overlap. In this paper we explore related questions arising from the interplay of multiple kinetic energy scales and electron-phonon interactions. Specifically, we use determinant quantum Monte Carlo (DQMC) to solve the half-filled Holstein Hamiltonian on a “decorated honeycomb lattice,” consisting of hexagons with internal hopping $\textit{t}$ coupled together by $\textit{t'}$. This modulation of the hopping introduces a gap in the Dirac spectrum and affects the nature of the topological phases. Here, we determine the range of $\textit{t/t'}$ values which support a charge density wave phase about the Dirac point of uniform hopping $\textit{t = t'}$, as well as the critical transition temperature $T_c$. The QMC simulations are compared with the results of mean field theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Heat generation due to the Anderson catastrophe in mesoscopic devices

Anderson's orthogonality catastrophe (AOC) theorem establishes that the ground state of the many-body fermion system is asymptotically orthogonal to the ground state of the same system perturbed by a scattering potential so that the overlap between the original and new ground states decays to zero with the system size. We adopt the AOC for a description of heat production in a complementary metal-oxide-semiconductor transistor. We find that the heat released in the transistor comprises two distinct components, contribution from the dissipation accompanying electron transmission under the applied voltage and purely quantum-mechanical AOC part due to the change in scattering matrix for electrons upon switching between high and low conductance regimes. We calculate the AOC-induced heat production, which we call switching heat.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

All-optical control of charge transfer and interlayer excitons in transition metal dichalcogenide heterostructures

An all-optical approach to control interlayer charge transfer and interlayer exciton dynamics is demonstrated using transition metal dichalcogenide heterostructures of MoSe 2 /MoS 2 and MoSe 2 /WS 2 as examples. In the three-pulse pump-probe experiments, a control pulse injects photocarriers and produces an electric field due to the interlayer charge separation. A pump pulse excites new carriers and their dynamics under the influence of the control-injected carriers and field is time-resolved by measuring differential reflectance of a third probe pulse. In MoSe 2 /MoS 2 , the interlayer electron transfer time from MoSe 2 to MoS 2 decreases with increasing the control-injected carrier density and electric field. The dipole moment of the interlayer excitons is reduced by the control pulse, which can be utilized for ultrafast and all-optical control of interlayer excitons. The recombination of the interlayer excitons is enhanced by the control pulse, which increases the spatial overlap of the electron and hole wave functions. The effect of the control pulse on the interlayer excitons is confirmed in the MoSe 2 /WS 2 heterostructure, although its effect on the electron transfer time is not resolvable. Furthermore, these results reveal useful information to understand and control interlayer charge transfer dynamics and provide tools for ultrafast manipulation of electrons in van der Waals heterostructures.

36 MATERIALS SCIENCE↗

Electronic properties of epitaxial La 1- x Sr x RhO 3 thin films

Here, we report on the synthesis and electronic properties of epitaxial perovskite La 1- x Sr x RhO 3 thin films. Thin films with a Sr content ranging from $\textit{x}$ = 0 to 0.5 have been grown using molecular beam epitaxy. Transport and x-ray photoemission spectroscopy data reveal an insulator-metal-insulator transition, accompanied by a $\textit{p-}$ to $\textit{n}-$ type carrier change observed in Hall measurements. Combined with theoretical calculations, we find that the addition of Sr does not directly dope carriers into the conduction band, but rather induces localized Rh 4$\textit{d}$ states within the LaRhO 3 band gap. The bandwidth of the impurity band increases with Sr content, eventually causing the valence band (VB) and the localized Rh 4$\textit{d}$ band to overlap, which explains the first insulator-to-metal transition occurring at $\textit{x}$ = 0.35. For Sr content $\textit{x}$ > 0.4, possible cation ordering results in an increase of the gap between the VB and the Rh 4$\textit{d}$ band, leading to the second metal-to-insulator transition. We map out the electronic phase diagram of the Sr-doped LaRhO 3 system and suggest strategies to engineer the electronic states in rhodate systems via delocalizing the Rh 3+ states.

36 MATERIALS SCIENCE↗

Fast and robust all-electron density functional theory calculations in solids using orthogonalized enriched finite elements

Here, we present a computationally efficient approach to perform systematically convergent real-space all-electron Kohn-Sham density functional theory calculations for solids using an enriched finite element (FE) basis. The enriched FE basis is constructed by augmenting the classical FE basis with atom-centered numerical basis functions, comprising of atomic solutions to the Kohn-Sham problem. Notably, to improve the conditioning, we orthogonalize the enrichment functions with respect to the classical FE basis, without sacrificing the locality of the resultant basis. In addition to improved conditioning, this orthogonalization procedure also renders the overlap matrix block diagonal, greatly simplifying its inversion. Subsequently, we use a Chebyshev polynomial based filtering technique to efficiently compute the occupied eigenspace in each self-consistent field iteration. We demonstrate the accuracy and efficiency of the proposed approach on periodic unit cells and supercells. The benchmark studies show a staggering 130× speedup of the orthogonalized enriched FE basis over the classical FE basis. We also present a comparison of the orthogonalized enriched FE basis with the linearized augmented plane-wave + local orbitals basis, both in terms of accuracy and efficiency. Notably, we demonstrate that the orthogonalized enriched FE basis can handle large system sizes of ~10 000 electrons. Finally, we observe good parallel scalability of our implementation with 92% efficiency at 22× speedup for a system with 620 electrons

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Bardeen-Cooper-Schrieffer pairing of composite fermions

Topological pairing of composite fermions has led to remarkable ideas, such as excitations obeying non-Abelian braid statistics and topological quantum computation. Here, we construct a p-wave paired Bardeen-Cooper-Schrieffer (BCS) wave function for composite fermions in the torus geometry, which is a convenient geometry for formulating momentum space pairing as well as for revealing the underlying composite-fermion Fermi sea. Following the standard BCS approach, we minimize the Coulomb interaction energy at half filling in the lowest and the second Landau levels, which correspond to filling factors ν = 1/2 and ν = 5/2 in GaAs quantum wells, by optimizing two variational parameters that are analogous to the gap and the Debye cut-off energy of the BCS theory. Our results show no evidence for pairing at ν = 1/2 but a clear evidence for pairing at ν = 5/2. To a good approximation, the highest overlap between the exact Coulomb ground state at ν = 5/2 and the BCS state is obtained for parameters that minimize the energy of the latter, thereby providing support for the physics of composite-fermion pairing as the mechanism for the 5/2 fractional quantum Hall effect. We discuss the issue of modular covariance of the composite-fermion BCS wave function, and calculate its Hall viscosity and pair correlation function. By similar methods, we look for but do not find an instability to s-wave pairing for a spin-singlet composite-fermion Fermi sea at half-filled lowest Landau level in a system where the Zeeman splitting has been set to zero.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Approximate two-body generating Hamiltonian for the particle-hole Pfaffian wave function

We present two two-body Hamiltonians that approximate the exact particle-hole Pfaffian wave function with their ground states for all the system sizes where this wave function has been numerically constructed to date. The approximate wave functions have high overlap with the original and reproduce well the low-lying entanglement spectrum and structure factor. The approximate generating Hamiltonians are obtained by an optimization procedure where three to four pseudopotentials are varied in the neighbourhood of second Landau level Coulomb interaction or of a noninteracting model. They belong to a finite region in the variational space of Hamiltonians where each point approximately generates the particle-hole Pfaffian. Here we diagonalize the identified Hamiltonians for up to 20 electrons and find that for them the particle-hole Pfaffian shift appears energetically more favorable. The possibility to interpret the data in terms of composite fermions is discussed.

36 MATERIALS SCIENCE↗

Separation of Kondo lattice coherence from crystal electric field in CeIn 3 with Nd substitutions

The Ce m M n In 3m+2n (m=1,2;n=0,1) family has been one of the most studied families of heavy fermion compounds. This family has revealed many interesting low-temperature physics phenomena, like quantum critical points, heavy fermion superconductivity, and non-Fermi liquid behavior, when these materials are exposed to pressure, magnetic fields, and/or chemical substitution. In this work, we provide a thorough investigation of the Ce 1-x Nd x In 3 phase diagram through single crystal synthesis, x-ray diffraction, energy-dispersive spectroscopy, magnetic susceptibility, and electrical resistivity measurements. Previous electrical resistivity measurements on CeIn 3 reveal a broad maximum, T max ~50 K, which has been associated with the Kondo lattice coherence crossover and/or the crystal electric field depopulation effect as the 4f electrons condense from the high-energy quartet down to the ground state doublet. Our findings show that in the most disordered substitution region, x=0.4–0.5, these features disjoin to reveal two distinct broad humps in electrical resistivity measurements. Magnetic susceptibility and electrical resistivity data on Ce 1-x Nd x In 3 also reveal the antiferromagnetic ordering competition between CeIn 3 and NdIn 3 , where the T N of CeIn 3 is linearly suppressed to a critical concentration of x Nd ~0.6. This concentration is slightly lower than what was previously reported in nonmagnetically substituted Ce 1-x La x In 3 . Our magnetic susceptibility measurements and subsequent simulations show that in the CeIn 3 antiferromagnetic regime, x Nd ≤0.4, the Nd ions act as free paramagnets. The large magnitude of the associated paramagnetic response then masks the overlapping antiferromagnetic ordering signature of the Ce ions. Overall our study further sheds light on the underlying crystal electric field and Kondo lattice coherence interactions within the Ce m M n In 3m+2n family and could stimulate further studies of these systems via neutron diffraction or under applied pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

$O(N)$ ab initio calculation scheme for large-scale moiré structures

Here we present a two-step method specifically tailored for band structure calculation of the small-angle moiré-pattern materials which contain tens of thousands of atoms in a unit cell. In the first step, the self-consistent field calculation for the ground state is performed with the O(N) Krylov subspace method implemented in openmx. Second, the crystal momentum-dependent Bloch Hamiltonian and overlap matrix are constructed from the results obtained in the first step and only a small number of eigenvalues near the Fermi energy are solved with shift-invert and Lanczos techniques. By systematically tuning two key parameters, the cutoff radius for electron hopping interaction and the dimension of the Krylov subspace, we obtained the band structures for both rigid and corrugated twisted bilayer graphene structures down to the first magic angle (θ = 1.08°) with high enough accuracy at affordable costs. The band structures are in good agreement with those from tight-binding models, continuum models, plane-wave pseudopotential based ab initio calculations, and experimental observations. This method is also shown to be efficient in twisted double-bilayer graphene and bilayer WSe 2 . We think this two-step method can play a crucial role in other twisted two-dimensional materials, especially those with much more complex band structure and where the effective model is hard to construct.

36 MATERIALS SCIENCE↗