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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,549 records · Page 86
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Thermal vibration characteristics of armchair boron-nitride nanotubes

A nanomechanical resonator based sensor works by detecting small changes in the natural frequency of the device in presence of external agents. In this study, we address the length and the temperature-dependent sensitivity of precompressed armchair Boron-Nitride nanotubes towards their use as sensors. The vibrational data, obtained using molecular dynamics simulations, are analyzed for frequency content through the fast Fourier transformation. As the temperature of the system rises, the vibrational spectrum becomes noisy, and the modal frequencies show a red-shift irrespective of the length of the nanotube, suggesting that the nanotube based sensors calibrated at a particular temperature may not function desirably at other temperatures. Temperature-induced noise becomes increasingly pronounced with the decrease in the length of the nanotube. For the shorter nanotube at higher temperatures, we observe multiple closely spaced peaks near the natural frequency, that create a masking effect and reduce the sensitivity of detection. However, longer nanotubes do not show these spurious frequencies, and are considerably more sensitive than the shorter ones.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Generation of arbitrary vector beams with liquid crystal polarization converters and vector-photoaligned q-plates

Arbitrary vector beams (VBs) are realized by the designed polarization converters and corresponding vector-photoaligned q-plates. The polarization converter is a specific twisted nematic cell with one substrate homogeneously aligned and the other space-variantly aligned. By combining a polarization-sensitive alignment agent with a dynamic micro-lithography system, various categories of liquid crystal polarization converters are demonstrated. Besides, traditional radially/azimuthally polarized light, high-order and multi-ringed VBs, and a VB array with different orders are generated. The obtained converters are further utilized as polarization masks to implement vector-photoaligning. The technique facilitates both the volume duplication of these converters and the generation of another promising optical element, the q-plate, which is suitable for the generation of VBs for coherent lasers. The combination of proposed polarization converters and correspondingly fabricated q-plates would drastically enhance the capability of polarization control and may bring more possibilities for the design of photonic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Image computing techniques to extrapolate data for dust tracking in case of an experimental accident simulation in a nuclear fusion plant

In this paper, a preliminary shadowgraph-based analysis of dust particles re-suspension due to loss of vacuum accident (LOVA) in ITER-like nuclear fusion reactors has been presented. Dust particles are produced through different mechanisms in nuclear fusion devices, one of the main issues is that dust particles are capable of being re-suspended in case of events such as LOVA. Shadowgraph is based on an expanded collimated beam of light emitted by a laser or a lamp that emits light transversely compared to the flow field direction. In the STARDUST facility, the dust moves in the flow, and it causes variations of refractive index that can be detected by using a CCD camera. The STARDUST fast camera setup allows to detect and to track dust particles moving in the vessel and then to obtain information about the velocity field of dust mobilized. In particular, the acquired images are processed such that per each frame the moving dust particles are detected by applying a background subtraction technique based on the mixture of Gaussian algorithm. The obtained foreground masks are eventually filtered with morphological operations. Finally, a multi-object tracking algorithm is used to track the detected particles along the experiment. For each particle, a Kalman filter-based tracker is applied; the particles dynamic is described by taking into account position, velocity, and acceleration as state variable. The results demonstrate that it is possible to obtain dust particles’ velocity field during LOVA by automatically processing the data obtained with the shadowgraph approach.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Nano-textured high sensitivity ion sensitive field effect transistors

Nano-textured gate engineered ion sensitive field effect transistors (ISFETs), suitable for high sensitivity pH sensors, have been realized. Utilizing a mask-less deep reactive ion etching results in ultra-fine poly-Si features on the gate of ISFET devices where spacing of the order of 10 nm and less is achieved. Incorporation of these nano-sized features on the gate is responsible for high sensitivities up to 400 mV/pH in contrast to conventional planar structures. The fabrication process for this transistor is inexpensive, and it is fully compatible with standard complementary metal oxide semiconductor fabrication procedure. A theoretical modeling has also been presented to predict the extension of the diffuse layer into the electrolyte solution for highly featured structures and to correlate this extension with the high sensitivity of the device. The observed ultra-fine features by means of scanning electron microscopy and transmission electron microscopy tools corroborate the theoretical prediction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al{sub 2}O{sub 3} layers crystallized on Si(111) substrates

We report on selective-area metal-organic vapor phase epitaxy and magnetic characterization of coupled MnAs/AlGaAs nanoclusters formed on thin Al{sub 2}O{sub 3} insulating layers crystallized on Si(111) substrates. Cross-sectional transmission electron microscopy reveals that poly-crystalline γ-Al{sub 2}O{sub 3} grains are formed after an annealing treatment of the amorphous Al{sub 2}O{sub 3} layers deposited by atomic layer deposition on Si(111) substrates. The 〈111〉 direction of the γ-Al{sub 2}O{sub 3} grains tends to be oriented approximately parallel to the 〈111〉 direction of the Si substrate. We observe that hexagonal MnAs nanoclusters on AlGaAs buffer layers grown by selective-area metal-organic vapor phase epitaxy on partially SiO{sub 2}-masked Al{sub 2}O{sub 3} insulator crystallized on Si(111) substrates are oriented with the c-axis along the 〈111〉 direction of the substrates, but exhibit a random in-plane orientation. A likely reason is the random orientation of the poly-crystalline γ-Al{sub 2}O{sub 3} grains in the Al{sub 2}O{sub 3} layer plane. Magnetic force microscopy studies at room temperature reveal that arrangements of coupled MnAs nanoclusters exhibit a complex magnetic domain structure. Such arrangements of coupled MnAs nanoclusters may also show magnetic random telegraph noise, i.e., jumps between two discrete resistance levels, in a certain temperature range, which can be explained by thermally activated changes of the complex magnetic structure of the nanocluster arrangements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Luminescent single-ion magnets from Lanthanoid(III) complexes with monodentate ketone ligands

We synthesized [Ln{sup III}(hfac){sub 3}(H{sub 2}O)(L)] (abbreviated as Ln-L; Ln = Gd, Tb, Eu; L = DTBK (di-t-butyl ketone), BP (benzophenone)), in which the carbonyl oxygen atom was coordinated to the Ln ion center, despite of such bulky substituents. Their crystal structures were determined by means of X-ray diffraction study. Gd-DTBK is completely isomorphous to the di-t-butyl nitroxide derivative and accordingly can be regarded as a model with the ligand spin masked. The ac magnetic susceptibility measurements on Tb-DTBK and -BP showed frequency dependence, characteristic of single-ion magnets. They also displayed photoluminescence in the solid state at room temperature. The quantum yields of the luminescence of Tb-DTBK and -BP (λ{sub ex} = 360 nm) were improved to 57 and 35%, respectively, from that of the starting material [TbI{sup III}(hfac){sub 3}(H{sub 2}O){sub 2}] (28% at λ{sub ex} = 370 nm). Similarly, the quantum yields for Eu-DTBK and -BP were 8 and 15%, respectively, with λ{sub ex} = 400 nm, while that of the starting material [EuI{sup III}(hfac){sub 3}(H{sub 2}O){sub 2}] was 4% at λ{sub ex}=400 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Optical devices combining an organic semiconductor crystal with a two-dimensional inorganic diffraction grating

We have fabricated optical devices using an organic semiconductor crystal as an emission layer in combination with a two-dimensional (2D) inorganic diffraction grating used as an optical cavity. We formed the inorganic diffraction grating by wet etching of aluminum-doped zinc oxide (AZO) under a 2D cyclic olefin copolymer (COC) diffraction grating used as a mask. The COC diffraction grating was fabricated by nanoimprint lithography. The AZO diffraction grating was composed of convex prominences arranged in a triangular lattice. The organic crystal placed on the AZO diffraction grating indicated narrowed peaks in its emission spectrum under ultraviolet light excitation. These are detected parallel to the crystal plane. The peaks were shifted by rotating the optical devices around the normal to the crystal plane, which reflected the rotational symmetries of the triangular lattice through 60°.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

We demonstrate a great improvement in the crystal quality of our semi-polar (11-22) GaN overgrown on regularly arrayed micro-rod templates fabricated using a combination of industry-matched photolithography and dry-etching techniques. As a result of our micro-rod configuration specially designed, an intrinsic issue on the anisotropic growth rate which is a great challenge in conventional overgrowth technique for semi-polar GaN has been resolved. Transmission electron microscopy measurements show a different mechanism of defect reduction from conventional overgrowth techniques and also demonstrate major advantages of our approach. The dislocations existing in the GaN micro-rods are effectively blocked by both a SiO{sub 2} mask on the top of each GaN micro-rod and lateral growth along the c-direction, where the growth rate along the c-direction is faster than that along any other direction. Basal stacking faults (BSFs) are also effectively impeded, leading to a distribution of BSF-free regions periodically spaced by BSF regions along the [-1-123] direction, in which high and low BSF density areas further show a periodic distribution along the [1-100] direction. Furthermore, a defect reduction model is proposed for further improvement in the crystalline quality of overgrown (11-22) GaN on sapphire.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Periodic domain inversion in x-cut single-crystal lithium niobate thin film

We report the fabrication of periodically poled domain patterns in x-cut lithium niobate thin-film. Here, thin films on insulator have drawn particular attention due to their intrinsic waveguiding properties offering high mode confinement and smaller devices compared to in-diffused waveguides in bulk material. In contrast to z-cut thin film lithium niobate, the x-cut geometry does not require back electrodes for poling. Further, the x-cut geometry grants direct access to the largest nonlinear and electro-optical tensor element, which overall promises smaller devices. The domain inversion was realized via electric field poling utilizing deposited aluminum top electrodes on a stack of LN thin film/SiO{sub 2} layer/Bulk LN, which were patterned by optical lithography. The periodic domain inversion was verified by non-invasive confocal second harmonic microscopy. Our results show domain patterns in accordance to the electrode mask layout. The second harmonic signatures can be interpreted in terms of spatially, overlapping domain filaments which start their growth on the +z side.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Development of broadband X-ray interference lithography large area exposure system

The single-exposure patterned area is about several 10{sup 2} × 10{sup 2} μm{sup 2} which is mainly decided by the mask area in multi-beam X-ray interference lithography (XIL). The exposure area is difficult to stitch to a larger one because the patterned area is surrounded by 0th diffraction exposure areas. To block the 0th diffraction beams precisely and effectively, a new large area exposure technology is developed in the Shanghai Synchrotron Radiation Facility by applying an order-sorting aperture with a new in situ monitoring scheme in the XIL system. The patterned area could be stitched readily up to several square centimeters and even bigger by this technology.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy

Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO{sub 2} mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p{sup +}–Si/n{sup +}–GaAs p–n diodes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Role of laser energy density on growth of highly oriented topological insulator Bi{sub 2}Se{sub 3} thin films

Topological insulators (TIs) are very promising in the field of nanoelectronics due to their exotic properties. Bismuth Selenide, a 3D Topological insulator is considered as reference TI owing to its simple band structure and large bandgap. However, the presence of unintentional doping, which masks the metallic surface states, is still a major concern. In this work, we report the effect of laser energy density on the growth of highly oriented and stoichiometric thin films of Bi{sub 2}Se{sub 3} by pulsed laser deposition (PLD). Structural characterizations by X-ray diffraction (XRD) and Raman Spectroscopy confirms the c-axis orientation and good crystallinity of films. Atomic force microscopy (AFM) study shows the increase in average grain size and rms roughness (from 3.1 nm to 5.1 nm) with the decrease in laser energy density. Compositional study by X-Ray Reflectivity (XRR) measurement is found to be in agreement with AFM results. Energy dispersive x-ray spectroscopy (EDS) measurements confirm the desired stoichiometry of the samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

An upgrade beamline for combined wide, small and ultra small-angle x-ray scattering at the ESRF

This contribution presents the main design features of the upgraded beamline ID02 (TRUSAXS). The beamline combines different small-angle X-ray scattering techniques in one unique instrument. The key component of this instrument is an evacuated (5×10{sup −3} mbar) stainless steel detector tube of length 34 m and diameter 2 m. Three different detectors (Rayonix MX170, Pilatus 300 K and FReLoN 4M) are housed inside a motorized wagon which travels along a rail system with very low parasitic lateral movements (± 0.3 mm). This system allows automatically changing the sample-to-detector distance from about 1 m to 31 m and selecting the desired detector. In addition, a wide angle detector (Rayonix LX170) is installed just above the entrance cone of the tube for optional wide-angle X-ray scattering measurements. The beamstop system enables monitoring of the X-ray beam intensity in addition to blocking the primary beam, and automated insertion of selected masks behind the primary beamstop. The focusing optics and collimation system permit to cover a scattering vector (q) range of 0.002 nm{sup −1} ≤ q ≤ 50 nm{sup −1} with one unique setting using 0.1 nm X-ray wavelength for moderate flux (5×10{sup 12} photons/sec). However, for higher flux (6x10{sup 13} photons/sec) or higher resolution (minimum q < 0.001 nm{sup −1}), focusing and collimation, respectively need to be varied. For a sample-to-detector distance of 31 m and 0.1 nm wavelength, two dimensional ultra small-angle X-ray scattering patterns can be recorded down to q≈0.001 nm{sup −1} with far superior quality as compared to one dimensional profiles obtained with a Bonse-Hart instrument.

43 PARTICLE ACCELERATORS↗
DOE OSTI2016

The role of Gouy phase on the mechanical effects of Laguerre-Gaussian light interacting with atoms

We consider the case of Laguerre-Gaussian (LG) light with high values of radial index, p, and/or winding number l, focussing on the effects of the Gouy phase together with other phase contributions due to the curvature in a Laguerre Gaussian beam when it interacts with atoms at near resonance. We show here that these phase anomalies amount to a significant reduction of the axial wavevector and thus lead to additional contributions to the phase gradient in the vicinity of the focus plane. In consequence, the axial recoil effects due to the stimulated emission and absorption of light by the atom become smaller. This has important effects on the dissipative axial forces acting on the atom, on the momentum fluctuations associated with the photon absorption and stimulated emission and on diffraction of atoms through light masks created by LG beams.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

A promising limited angular computed tomography reconstruction via segmentation based regional enhancement and total variation minimization

X-ray computed tomography (CT) is a powerful and common inspection technique used for the industrial non-destructive testing. However, large-sized and heavily absorbing objects cause the formation of artifacts because of either the lack of specimen penetration in specific directions or the acquisition of data from only a limited angular range of views. Although the sparse optimization-based methods, such as the total variation (TV) minimization method, can suppress artifacts to some extent, reconstructing the images such that they converge to accurate values remains difficult because of the deficiency in continuous angular data and inconsistency in the projections. To address this problem, we use the idea of regional enhancement of the true values and suppression of the illusory artifacts outside the region to develop an efficient iterative algorithm. This algorithm is based on the combination of regional enhancement of the true values and TV minimization for the limited angular reconstruction. In this algorithm, the segmentation approach is introduced to distinguish the regions of different image knowledge and generate the support mask of the image. A new regularization term, which contains the support knowledge to enhance the true values of the image, is incorporated into the objective function. Then, the proposed optimization model is solved by variable splitting and the alternating direction method efficiently. A compensation approach is also designed to extract useful information from the initial projections and thus reduce false segmentation result and correct the segmentation support and the segmented image. The results obtained from comparing both simulation studies and real CT data set reconstructions indicate that the proposed algorithm generates a more accurate image than do the other reconstruction methods. The experimental results show that this algorithm can produce high-quality reconstructed images for the limited angular reconstruction and suppress the illusory artifacts caused by the deficiency in valid data.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Towards intrinsic MoS{sub 2} devices for high performance arsenite sensing

Molybdenum disulphide (MoS{sub 2}) is one of the most attractive two dimensional materials other than graphene, and the exceptional properties make it a promising candidate for bio/chemical sensing. Nevertheless, intrinsic properties and sensing performances of MoS{sub 2} are easily masked by the presence of the Schottky barrier (SB) at source/drain electrodes, and its impact on MoS{sub 2} sensors remains unclear. Here, we systematically investigated the influence of the SB on MoS{sub 2} sensors, revealing the sensing mechanism of intrinsic MoS{sub 2}. By utilizing a small work function metal, Ti, to reduce the SB, excellent electrical properties of this 2D material were yielded with 2–3 times enhanced sensitivity. We experimentally demonstrated that the sensitivity of MoS{sub 2} is superior to that of graphene. Intrinsic MoS{sub 2} was able to realize rapid detection of arsenite down to 0.1 ppb without the influence of large SB, which is two-fold lower than the World Health Organization (WHO) tolerance level and better than the detection limit of recently reported arsenite sensors. Additionally, accurately discriminating target molecules is a great challenge for sensors based on 2D materials. This work demonstrates MoS{sub 2} sensors encapsulated with ionophore film which only allows certain types of molecules to selectively permeate through it. As a result, multiplex ion detection with superb selectivity was realized. Our results show prominent advantages of intrinsic MoS{sub 2} as a sensing material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm{sup 2} and a peak-to-valley current ratio of ≈1.15 across different sizes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗