Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “FILMS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,549 records · Page 86
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Optical and electronic properties of highly stable and textured hydrogenated ZnO:Al thin films

Highlights: ► We investigate the impact of hydrogen treatment at high temperature of ZnO:Al film. ► Electrical properties of the ZnO:Al films improved due to hydrogen annealing. ► Optical properties of the ZnO:Al films enhanced due to hydrogen annealing. ► ZnO:Al film properties strongly depend on the hydrogen treatment temperature. -- Abstract: We have experimentally investigated the effects of hydrogen-annealing on the structural, electrical, and optical properties of Al-doped ZnO (ZnO:Al) thin films prepared by RF magnetron sputtering at room temperature. From the X-ray diffraction observations, the orientation of ZnO:Al films was found to be a c-axis in the hexagonal structure. We found that intentionally incorporated hydrogen plays an important role in n-type conduction as a donor, improving free carrier concentration and electrical stability. We simultaneously obtained improved optical transmission and enhanced absorption edge of the ZnO:Al film due to hydrogen-annealing. Our experimental data suggest the hydrogen-annealing process as an important role in the enhancement of electrical and optical properties, which is promising as a back reflector material for thin-film solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition

Highlights: ► Unique m-plane ZnO films were deposited on m-plane sapphire substrate by PLD. ► The epitaxial relationship between the film and the substrate was studied. ► The surface morphology showed stripes due to in-plane anisotropy. ► PL spectra showed strong NBE emission and weak deep level emission. -- Abstract: Non-polar ZnO thin films were deposited on m-plane sapphire substrates by pulsed laser deposition at various temperatures from 300 to 700 °C. The effects of growth temperature on surface morphology, structural, electrical, and optical properties of the films were investigated. All the films exhibited unique m-plane orientation indicated by X-ray diffraction and transmission electron microscopy. Based on the scanning electron microscopy and atomic force microscopy, the obtained films had smooth and highly anisotropic surface, and the root mean square roughness was less than 10 nm above 500 °C. The maximum electron mobility was ∼18 cm{sup 2}/V s, with resistivity of ∼0.26 Ω cm for the film grown at 700 °C. Room temperature photoluminescence of the m-plane films was also investigated.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

Graphical abstract: The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity. Highlights: ► The preparation of CdS nanodot thin film at room temperature by M-CBD technique. ► Study of air annealing on prepared CdS nanodots thin film. ► The optimized annealing temperature for CdS nanodot thin film is 350 °C. ► Modified CdS thin films can be used in photosensor application. -- Abstract: CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature using modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Different magnetic origins of (Mn, Fe)-codoped ZnO powders and thin films

Graphical abstract: The effects of the sample forms, fabricated methods, and process conditions on the structural and magnetic properties of (Mn, Fe)-codoped ZnO powders and films were systematically studied. The origins of ferromagnetism in the vacuum-annealed powder and PLD-deposited film are different. The former originates from the impurities of magnetic clusters, whereas the latter comes from the almost homogenous phase. Highlights: ► The magnetic natures of Zn{sub 0.98}Mn{sub 0.01}Fe{sub 0.01}O powders and thin films come from different origins. ► The ferromagnetism of the powder is mainly from the contribution of magnetic clusters. ► Whereas the ferromagnetic behavior of the film comes from the almost homogenous phase. -- Abstract: The structural and magnetic properties of (Mn, Fe)-codoped ZnO powders as well as thin films were investigated. The X-ray diffraction and magnetic measurements indicated that the higher sintering temperature facilitates more Mn and Fe incorporation into ZnO. Magnetic measurements indicated that the powder sintered in air at 800 °C showed paramagnetic, but it exhibited obvious room temperature ferromagnetism after vacuum annealing at 600 °C. The results revealed that magnetic clusters were the major contributors to the observed ferromagnetism in vacuum-annealed Zn{sub 0.98}Mn{sub 0.01}Fe{sub 0.01}O powder. Interestingly, the room temperature ferromagnetism was also observed in the Zn{sub 0.98}Mn{sub 0.01}Fe{sub 0.01}O film deposited via pulsed laser deposition from the air-sintered paramagnetic target, but the secondary phases in the film were not detected from X-ray diffraction, transmission electron microscopy, and zero-field cooling and field cooling. Apparently, the magnetic natures of powders and films come from different origins.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm{sup −1}, by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm{sup −1} in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T{sub c} < 50 K. -- Abstract: Spectroscopic and magnetic properties of Mn doped GaN, and GaN epitaxial films have been investigated by employing micro-photoluminescence, micro-Raman, and temperature dependent magneto-resistance measurements. The HR-XRD profiles have shown that the epitaxial films are in hexagonal wurtzite structures. Morphology and composition of the films have been examined by field emission scanning electron microscopy, and energy-dispersive X-ray analysis. Micro-photoluminescence spectrum displayed a dominant near band edge emission at 362 nm, which is assigned to near band edge transition within the hexagonal structure of GaN. Raman scattering profiles showed a new vibrational mode at 578 cm{sup −1}, which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Morphological, luminescence and structural properties of nanocrystalline silicon thin films

Highlights: ► The PL spectra showed two stronger peaks and one weaker peak. ► The PL peak energies and optical band-gap values were found higher than 1.12 eV. ► The structural change from an amorphous to nanocrystalline with increasing [SiH{sub 4}]. - Abstract: Nanocrystalline silicon (nc-Si) thin films deposited by plasma-enhanced chemical vapor deposition at various silane flow rates ([SiH{sub 4}]) are studied. The characterization of these films by high-resolution transmission electron microscopy, Raman spectroscopy and X-ray diffraction reveals that no film and very thin film is deposited at [SiH{sub 4}] = 0.0 and 0.1 sccm, respectively. In addition, the structural change from an amorphous to a nanocrystalline phase occurs at around [SiH{sub 4}] = 0.2 sccm. In this study, the importance of arriving species at surfaces and precursors is clearly demonstrated by the effect of a small addition of SiH{sub 4} on the frequency and width of a Raman peak and the structure of the grown film. The infrared spectroscopic analysis shows no hydrogen incorporation in the nc-Si film deposited at the low value of [SiH{sub 4}]. However, the intensity of the peak around 2100 cm{sup −1} due to SiH decreases with increasing [SiH{sub 4}]. All fabricated films give photoluminescence in the range between 1.7 and 2.4 eV at room temperature, indicating enlargement of the band-gap energy. The presence of very small crystallites leads to the appearance of quantum confinement effects. The variations of the photoluminescence energy and spectral width are well correlated with the structural properties of the films such as crystallite size, crystalline volume fraction, and the density of Si-H bonds.

36 MATERIALS SCIENCE↗
DOE OSTI2013

The influence of Cd doping on the microstructure and optical properties of nanocrystalline copper ferrite thin films

Highlights: ► The structural and optical properties of Cu{sub 1−x}Cd{sub x}Fe{sub 2}O{sub 4} thin films were studied. ► The micro structural parameters of the films have been determined. ► The room temperature reflectance and transmittance data are analyzed. ► The refractive index and energy gap are determined. ► The single oscillator parameters were calculated. - Abstract: Nanocrystalline thin films of mixed Cu–Cd ferrites, Cu{sub 1−x}Cd{sub x}Fe{sub 2}O{sub 4} (x = 0, 0.2, 0.3, 0.5, 0.7, 0.8, 0.9 and 1), were deposited by electron beam evaporation technique. The films were annealed at 450 °C for 1 h. The effect of Cd doping on the structural and optical properties of the deposited films has been investigated by using X-ray diffraction (XRD) and optical spectrophotometry. XRD patterns of the annealed films show spinal cubic structure. The lattice parameter was found to increase with the increase of cadmium concentration. The crystallite size of the films was found to vary from 8 nm to 30 nm. The optical transition was found to be direct and indirect transitions with energy gaps decrease from 2.466 (x = 0) to 2.00 (x = 1) eV and from 2.148 (x = 0) to 1.824 (x = 1) eV, respectively. The refractive index dispersion of the films was found to increase with Cd content and discussed in terms of the Wemple–DiDomenico single oscillator model.

36 MATERIALS SCIENCE↗
DOE OSTI2013

A detailed examination of the growth of CdSe thin films through structural and optical characterization

Highlights: ► Urbach tail width decreases by about 200 meV with the film thickness. ► A coefficient of strain of around 3 × 10{sup −3} along [0 0 2] axis was predicted. ► Compressive strain gives rise to about 11 meV red shift in the band gap energy. ► A relative shift of about 2 cm{sup −1} of LO{sub 1} phonon mode in Raman spectra was observed between different thickness films. - Abstract: Different thickness CdSe thin films were grown on glass substrates by physical vapor deposition and characterized by optical and structural investigations. Urbach energy related to the width of the optical absorption tail decreases from 430 meV for a film thickness of 50 nm to 200 meV for 450 nm. The film thickness dependent grain sizes were estimated by using effective mass model under quantum size effect from the shift of around 500 meV in the asymptotic absorption edge. The X-ray diffraction (XRD) pattern is consistent with CdSe hexagonal crystal structure which indicates crystal growth mode along c axis. XRD peaks broaden and shift depending on film thicknesses which are presumably due to strain and size effect. We observe both blue and red shift depending on thickness in Longitudinal Optical phonon frequency in Raman spectra with respect to that of the source CdSe powder which could also be due to strain on thin films and/or finite crystallite size. In this work we combine the results of optical absorption, Raman and XRD spectroscopies to study the evolution of grain size, strain and structural disorder depending on film thickness.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Growth of copper indium sulphide films by thermal evaporation of mixtures of copper sulphide and indium sulphide powders

Graphical abstract: - Highlights: • CuInS{sub 2} films are prepared by resistively heating mixtures of CuS and In{sub 2}S{sub 3}. • As deposited films consist of Cu{sub 7}S{sub 4}, InS and In{sub 2}S{sub 3}. • These species react during vacuum annealing to produce CuInS{sub 2} films. • The films bear stoichiometric or Cu-rich composition. • Their electrical and optical features are conducive for photovoltaic applications. - Abstract: The physical evaporation of a 1:1 mixture of copper sulphide (CuS) and indium sulphide (In{sub 2}S{sub 3}) powders by resistive heating followed by the vacuum annealing of the resulting films at 723 K produces copper indium sulphide (CuInS{sub 2}) films with about 95% phase purity. Composed of sub-micron sized grains, the films bear stoichiometric or Cu-rich composition and are endowed with p-type conductivity, a band gap of about 1.5 eV and an absorption coefficient of about 4 × 10{sup 4} cm{sup −1} in visible region. Mechanistically, the formation of CuInS{sub 2} films takes place as a result of solid state reaction among Cu{sub 7}S{sub 4}, InS and In{sub 2}S{sub 3} in the condensed phase. These intermediate species are produced from the decomposition of CuInS{sub 2} formed in the evaporating mixture due to the reaction between CuS and In{sub 2}S{sub 3}, and excess CuS. Process simplicity and the absence of a sulphurisation step make this approach attractive for synthesising CuInS{sub 2} absorber layers for photovoltaic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Improved gas sensing and dielectric properties of Fe doped hydroxyapatite thick films: Effect of molar concentrations

Highlights: • We report improved gas sensing and dielectric characteristics of Fe ion exchanged HAp films. • Fe doped HAp film shows maximum gas response at relatively lower temperature. • Response and gas uptake capacity of sensors is improved for appropriate amount of Fe ions in HAp matrix. • Fe-HAp films exhibit remarkable improvement in dielectric properties compared to pure HAp. • Fe doped HAp films show significant improvement in gas sensing as well as in dielectric properties. - Abstract: In the present work Fe doped hydroxyapatite (Fe-HAp) thick films has been successfully utilized to improve the gas sensing as well as its dielectric properties. Initially, HAp nano powder is synthesized by chemical precipitation process and later on Fe ions are doped in HAp by ion exchange process. Structural and morphological modifications are observed by means of X-ray diffraction and scanning electron microscopy analysis. The sensing parameters such as operating temperature, response/recovery time and gas uptake capacity are experimentally determined. The Fe-HAp (0.05 M) film shows improved CO and CO{sub 2} gas sensing capacity at lower operating temperature compared to pure HAp. Moreover, variation of dielectric constant and dielectric loss for pure and Fe-HAp thick films are studied as a function of frequency in the range of 10 Hz–1 MHz. The study reveals that Fe doped HAp thick films improve the sensing and dielectric characteristics as compared to pure HAp.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Electrochemical preparation of poly(methylene blue)/graphene nanocomposite thin films

Highlights: • Poly(MB)/graphene thin films are prepared by a simple electrochemical approach. • Graphene layers in the film show a broad band in visible region of absorbance spectra. • Morphology of composite films indicates both disordered and ordered regions. • XRD reveals that nanocomposite films include rGO layers after electropolymerization process. • Chemically prepared graphene is better than electrochemically prepared graphene for electrooxidation of nitrite. - Abstract: Poly(methylene blue)/graphene nanocomposite thin films were prepared by electropolymerization of methylene blue in the presence of graphene which have been synthesized by two different methods of a chemical oxidation process and an electrochemical approach. Synthesized nanocomposite thin films were characterized by using cyclic voltammetry, UV–vis. absorption spectroscopy, powder X-ray diffraction, and scanning tunneling microscopy techniques. Electrocatalytical properties of prepared poly(methylene blue)/graphene nanocomposite films were compared toward electrochemical oxidation of nitrite. Under optimized conditions, electrocatalytical effect of nanocomposite films of chemically prepared graphene through electrochemical oxidation of nitrite was better than that of electrochemically prepared graphene.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition

Highlights: • Ti doped ZnO films were prepared on Corning XG glass substrate by ALD. • The electrical properties and optical properties were systematically investigated. • An optimized Ti doped ZnO films had low resistivity and excellent optical transmittance. - Abstract: Titanium doped zinc oxide (Ti doped ZnO) films were prepared by atomic layer deposition methods at a deposition temperature of 200 °C. The Ti content in Ti doped ZnO films was varied from 5.08 at.% to 15.02 at.%. X-ray diffraction results indicated that the crystallinity of the Ti doped ZnO films had degraded with increasing Ti content. Transmission electron microscopy was used to investigate the microstructural evolution of the Ti doped ZnO films, showing that both the grain size and crystallinity reduced with increasing Ti content. The electrical resistivity of the Ti doped ZnO films showed a minimum value of 1.6 × 10{sup −3} Ω cm with the Ti content of 6.20 at.%. Furthermore, the Ti doped ZnO films exhibited excellent transmittance.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Synthesis, microstructure, and electronic band structure properties of nanocrystalline neodymium-doped bismuth titanate ferroelectric films fabricated by the sol–gel method

Graphical abstract: X-ray diffraction indicates that the films are polycrystalline with the pure perovskite phase. Ten Raman active modes and one silicon substrate mode can be observed. The A{sub 1} {sub g}[Bi] at about 59 cm{sup −1} is unchanged whereas the B{sub 1} {sub g} and A{sub 1} {sub g}[Ti] phonon modes shift towards higher frequencies. Photoluminescence shows that the intensities of the two peaks increase with Nd concentration except the Bi{sub 3}NdTi{sub 3}O{sub 12} film, due to the smallest grain size and oxygen vacancy defects. Good optical functions of the BNT films are achieved due to the SE suggesting potential applications in ferroelectric-based optoelectronic devices. - Abstract: Bi{sub 4−x}Nd{sub x}Ti{sub 3}O{sub 12} (BNT) films with different Nd contents (from 0 to 1 with 0.25 intervals) are prepared by the sol–gel process. The Nd substitution effects on the preferred orientation, surface morphology, phonon modes, emission bands, andelectronic band structures of the BNT films are investigated by microscopy, Raman scattering, photoluminescence, and spectroscopic ellipsometry (SE) at room temperature. X-ray diffraction indicates that the films are polycrystalline with the pure perovskite phase. Ten Raman active modes and one silicon substrate mode can be observed. The A{sub 1} {sub g}[Bi] at about 59 cm{sup −1} is unchanged whereas the B{sub 1} {sub g} and A{sub 1} {sub g}[Ti] phonon modes shift towards higher frequencies. Photoluminescence shows that the intensities of the two peaks increase with Nd concentration except the Bi{sub 3}NdTi{sub 3}O{sub 12} film, due to the smallest grain size and oxygen vacancy defects. Good optical functions of the BNT films are achieved due to the SE suggesting potential applications in ferroelectric-based optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Modulation of microstructure and optical properties of Mo-doped ZnO thin films by substrate temperature

Highlights: • Mo-doped ZnO films are obtained by sputtering at various substrate temperatures. • High-quality MZO thin films with good crystalline have been obtained at 200 °C. • Deposition temperature affects the amount of defects in the crystalline structure - Abstract: Mo-doped ZnO(MZO) films were deposited on Si (1 1 1) substrates by radio frequency sputtering at different substrate temperatures of 200, 300 and 400 °C. The effect of the substrate temperature on the structural and optical properties of the MZO films has been investigated. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (0 0 2) plane. The crystallinity and surface morphologies of the films are strongly dependent on the growth temperature, which in turn exerts a great effect on microstructural and optical properties of the MZO films. The optical absorption measurements show high ultraviolet (UV) absorbance property of MZO with sharp and intense absorption band in this region and the optical band gap (E{sub g}) are 3.18, 3.22, 3.25 and 3.21 eV for the films deposited at room temperature, 200, 300 and 400 °C. The photoluminescence (PL) intensity of a strong broad violet–blue emission from MZO nanostructures with increasing deposited temperature was also observed. X-ray photoelectron spectroscopy (XPS) was employed to investigate the surface chemical composition of growth products.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Influence of annealing temperature on structural and optical properties of Lu{sub 2}O{sub 3}:Eu{sup 3+}, Tb{sup 3+} transparent films

Highlights: • Lu{sub 2}O{sub 3}:Eu{sup 3+}, Tb{sup 3+} films were synthesized by sol–gel and by dip-coating technique. • Effects of annealing treatment on structural and optical properties were studied. • Optogeometrical characteristics of synthesized films were analyzed. • X-ray diffraction results showed that Lu{sub 2}O{sub 3}:Eu{sup 3+}, Tb{sup 3+} crystallizes at 700 °C. • High reddish emission on transparent films with at least 1 μm thick was observed. - Abstract: High-optical quality Lu{sub 2}O{sub 3}:Eu{sup 3+} 5 mol%, X Tb{sup 3+} (X = 0–0.04 mol%) thin films were prepared by the sol–gel process and dip-coating technique. The procedure was as follows: lutetium, europium and terbium nitrates were used as precursors, and ethanol as a solvent. Etylenglycol (EG) was added as a sol stabilizer, and the pH was adjusted by acetic acid. After 10 dipping-cycles, followed by an annealing process (600–900 °C) for 1 h, transparent, smooth and crack-free films (ra = 8–9 nm) were formed. The X-ray diffraction (XRD) results showed crystallized films into the cubic structure at 800 °C. The ellipsometry results showed that the thickness of the films varied from 1 to 1.4 μm at 1000 and 600 °C, respectively. Finally, the films presented a typical Eu{sup 3+} red emission at 611 nm ({sup 5}D{sub 0} → {sup 7}F{sub 2}); furthermore, the effect of the Tb{sup 3+} content showed that the highest emission intensity corresponded to the lower Tb{sup 3+} content.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effects of sulfurization time and H{sub 2}S concentration on electrical properties of Cu{sub 2}ZnSnS{sub 4} films prepared by sol–gel method

Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) films were prepared by sol–gel method following sulfurization. • The sulfurization time and H{sub 2}S concentration have the effects on the electrical properties. • The tin loss is increased with the increasing of the sulfurization time. • The secondary phases like ZnS make the electrical properties worse. • The CZTS films sulfurized at 5% H{sub 2}S for 90 min had the best electrical properties. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully deposited by a sol–gel method and sulfurization process. The properties of the films were investigated by varying sulfurization time and H{sub 2}S concentration. X-ray diffraction and Raman spectra analyses revealed the formation of CZTS films with a tetragonal type kesterite structure. With increasing the sulfurization time and H{sub 2}S concentration, the intensity of the kesterite (1 1 2) peak became sharper. The stoichiometric ratios of the CZTS films were different from the precursors, which was due to Sn loss during the sulfurization process. The electrical resistivity and mobility of the films increased while the carrier concentration decreased with increasing the sulfurization time. The CZTS thin films sulfurized at 5% H{sub 2}S concentration for 90 min had the best opto-electrical properties with E{sub g} of 1.41 eV, resistivity of 3.64 Ω cm, carrier concentration of 1.11 × 10{sup 18} cm{sup −3} and mobility of 1.54 cm{sup 2}/(V s) at room temperature for PV application.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Structural, optical and photo-catalytic activity of nanocrystalline NiO thin films

Highlights: • Synthesis of nanocrystalline NiO thin films with different thicknesses using DC magnetron sputtering technique. • Effect of film thickness and particle size on photo-catalytic degradation of methyl green dye under UV light was studied. • The deposited NiO thin films are efficient, stable and possess high photo-catalytic activity upon reuse. - Abstract: Physical deposition of nanocrystalline nickel oxide (NiO) thin films with different thickness 30, 50 and 80 nm have been done on glass substrate by DC magnetron sputtering technique and varying the deposition time from 600, 900 to 1200 s. The results of surface morphology and optical characterization of these films obtained using different characterization techniques such as X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), photoluminescence (PL) and UV–vis spectrophotometry provide important information like formation of distinct nanostructures in different films and its effect on their optical band gap which has decreased from 3.74 to 3.37 eV as the film thickness increases. Most importantly these films have shown very high stability and a specialty to be recycled without much loss of their photo-catalytic activity, when tested as photo-catalysts for the degradation of methyl green dye (MG) from the wastewater under the exposure of 18 W energy of UV lamp.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Thickness-dependent dispersion parameters, energy gap and nonlinear refractive index of ZnSe thin films

Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluated in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.

36 MATERIALS SCIENCE↗