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At least 1,549 records · Page 86

Insights into Prismatic Loop Formation in Irradiated Fe–Cr Alloys from Hypothesis-Driven Active Learning and Causal Analysis

Neutron and electron irradiation experimental studies conducted on body-centered cubic Fe and Fe–Cr alloys have established two prismatic dislocation loop populations, which have Burgers vectors of either a/2$\langle$111$\rangle$ or a$\langle$100$\rangle$. Here, the loop formation depends on factors such as dose (D), dose rate (D rt ), temperature (T), chromium content (Cr%), and other alloying elements. Hence, it is important to understand how irradiation-induced dislocation loops evolve conditional upon the loop characteristics, such as loop density (DD), average loop size d̅, and irradiation parameters (D, D rt , T, and irradiation type), which is still an active area of research. To understand these complex structure–property relationships, machine learning (ML) is employed in a three-step approach. This includes imputing missing data with a k-nearest neighbor, generating functionalized features, and assessing feature importance with random forest classification and regression. Physics-based features are incorporated in a hypothesis-driven active learning scheme to overcome data unavailability challenges. Insights obtained from ML models (i) to categorize dislocation loop types, show the highest correlation with d̅; (ii) Log(DD), obtained through mathematical formulations involving D, Cr%, d̅, and T (e.g., Log(DD) ~ D + exp(-Cr%) + 1/d̅ and log(DD) ~ D + exp(-Cr%) + 1/T). Hypothesis-driven active learning is able to predict Log(DD) in which the experimental date is not known. Causal models verify cause–effect relationships for dislocation loop classification and irradiation factors in FeCr alloys.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Strain relaxation of metastable SiGe/Si: Investigation with two complementary X-ray techniques

Metastable and strain relaxed SiGe layers with about 20% Ge content have been grown by molecular beam epitaxy on Si substrates at 550 deg. C. The thickness regime of metastability and the onset of strain relaxation were investigated on dust particle free surfaces obtained by careful chemical cleaning and epitaxy loading under clean room conditions. Compared to earlier results true metastable regime without misfit dislocations was obtained up to 140 nm thickness. The onset of strain relaxation started with heterogeneous nucleation sites of misfit dislocations. X-ray topography proved to be a unique monitoring tool to observe a low density of single dislocations. From these results we suggested to define a critical thickness band with lower bound t{sub cl} from dislocation nucleation to an upper bound t{sub co} (600 nm in our case) defined by the onset of considerable strain relaxation. The strain relief was measured by X-ray diffraction (reciprocal space mapping) and found to be very abrupt (76% strain relaxation at 800 nm thickness).

36 MATERIALS SCIENCE↗

Critical shell thickness for InAs-Al{sub x}In{sub 1-x}As(P) core-shell nanowires

InAs nanowires with Al{sub x}In{sub 1-x}P or Al{sub x}In{sub 1-x}As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid method in a gas source molecular beam epitaxy system. Core diameters and shell thicknesses were measured by transmission electron microscopy (TEM). These measurements were then related to selected area diffraction patterns to verify either interface coherency or relaxation through misfit dislocations. A theoretical strain model is presented to determine the critical shell thickness for given core diameters. Zincblende stiffness parameters are transformed to their wurtzite counterparts via a well known tensor transformation. An energy criterion is then given to determine the shell thickness, at which coherency is lost and dislocations become favourable. Our model only considers axial strain relieved by edge dislocations since they were the only type of dislocation observed directly by TEM.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method

The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 Ω cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

36 MATERIALS SCIENCE↗

The strain path dependence of plastic deformation response of AA5754: Experiment and modeling

This work presents modeling of experiments on a balanced biaxial (BB) pre-strained AA5754 alloy, subsequently reloaded uniaxially along the rolling direction and transverse direction. The material exhibits a complex plastic deformation response during the change in strain path due to 1) crystallographic texture, 2) aging (interactions between dislocations and Mg atoms) and 3) recovery (annihilation and re-arrangement of dislocations). With a BB prestrain of about 5 %, the aging process is dominant, and the yield strength for uniaxially deformed samples is observed to be higher than the flow stress during BB straining. The strain hardening rate after changing path is, however, lower than that for pre-straining. Higher degrees of pre-straining make the dynamic recovery more active. The dynamic recovery at higher strain levels compensates for the aging effect, and results in: 1) a reduction of the yield strength, and 2) an increase in the hardening rate of re-strained specimens along other directions. The yield strength of deformed samples is further reduced if these samples are left at room temperature to let static recovery occur. The synergistic influences of texture condition, aging and recovery processes on the material response make the modeling of strain path dependence of mechanical behavior of AA5754 challenging. In this study, the influence of crystallographic texture is taken into account by incorporating the latent hardening into a visco-plastic self-consistent model. Different strengths of dislocation glide interaction models in 24 slip systems are used to represent the latent hardening. Moreover, the aging and recovery effects are also included into the latent hardening model by considering strong interactions between dislocations and dissolved atom Mg and the microstructural evolution. These microstructural considerations provide a powerful capability to successfully describe the strain path dependence of plastic deformation behavior of AA5754.

36 MATERIALS SCIENCE↗

Ultrahigh strain-rate bending of copper nanopillars with laser-generated shock waves

An experimental study to bend FIB-prepared cantilevered single crystal Cu nanopillars of several hundred nanometers in diameter and length at ultrahigh strain rate is presented. The deformation is induced by laser-generated stress waves, resulting in local strain rates exceeding 10{sup 7} s{sup −1}. Loading of nano-scale Cu structures at these extremely short loading times shows unique deformation characteristics. At a nominal stress value of 297 MPa, TEM examination along with selected area electron diffraction characterization revealed that twins within the unshocked Cu pillars interacted with dislocations that nucleated from free surfaces of the pillars to form new subgrain boundaries. MD simulation results were found to be consistent with the very low values of the stress required for dislocation activation and nucleation because of the extremely high surface area to volume ratio of the nanopillars. Specifically, simulations show that the stress required to nucleate dislocations at these ultrahigh strain rates is about one order of magnitude smaller than typical values required for homogeneous nucleation of dislocation loops in bulk copper single crystals under quasi-static conditions.

36 MATERIALS SCIENCE↗

Investigation of leakage current paths in n-GaN by conductive atomic force microscopy

We have investigated electrical characteristics of leakage current paths in n-GaN layer grown by metal-organic chemical vapor deposition with conductive-atomic force microscopy (C-AFM). The C-AFM mapping shows two kinds of leakage current paths existing in the n-GaN layer: open-core dislocation and pure screw dislocation. From the localized I-V curves measured by C-AFM, we confirmed that the open-core screw dislocation shows more significant leakage current. We explained these results in terms of a modified Schottky band model based on donor states formed by oxygen segregation at the (10−10) sidewall of the open-core screw dislocation.

36 MATERIALS SCIENCE↗

Fatigue damage evaluation of austenitic stainless steel using nonlinear ultrasonic waves in low cycle regime

The interrupted low cycle fatigue test of austenitic stainless steel was conducted and the dislocation structure and fatigue damage was evaluated subsequently by using both transmission electron microscope and nonlinear ultrasonic wave techniques. A “mountain shape” correlation between the nonlinear acoustic parameter and the fatigue life fraction was achieved. This was ascribed to the generation and evolution of planar dislocation structure and nonplanar dislocation structure such as veins, walls, and cells. The “mountain shape” correlation was interpreted successfully by the combined contribution of dislocation monopole and dipole with an internal-stress dependent term of acoustic nonlinearity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Atomic and electronic structures of lattice mismatched Cu 2 O/TiO 2 interfaces

Heterojunction interfaces between metal oxides are often highly lattice mismatched. The atomic and electronic structures of such interfaces, however, are not well understood. Here, we have synthesized Cu 2 O/TiO 2 heterojunction thin films with 13% lattice mismatch and studied the interface via experimental methods and large-scale density function theory calculations of supercells containing 1300 atoms. We find that an interface of epitaxial quality is formed via a coincidence site lattice of 8 Cu 2 O unit cells matching 9 TiO 2 unit cells. Calculations reveal the existence of a dislocation core of the O sublattices at the interface and a random arrangement of one layer of interfacial Cu atoms. The interfacial electronic structure is found to be mostly determined by the interfacial Cu distribution, rather than by the O dislocation core. The conduction band minimum and valence band maximum states are spatially separated, and there is no strongly localized state near the core.

74 ATOMIC AND MOLECULAR PHYSICS↗

Radiation induced effects on mechanical properties of nanoporous gold foams

Previously, it was demonstrated that due to a high surface-to-volume ratio, nanoporous materials display radiation tolerance. The abundance of surfaces, which are perfect sinks for defects, and the relation between ligament size, defect diffusion, and time combine to define a window of radiation resistance [Fu et al., Appl. Phys. Lett. 101, 191607 (2012)]. Outside this window, the dominant defect created by irradiation in Au nanofoams are stacking fault tetrahedra (SFT). Molecular dynamics computer simulations of nanopillars, taken as the elemental constituent of foams, predict that SFTs act as dislocation sources inducing softening, in contrast to the usual behavior in bulk materials, where defects are obstacles to dislocation motion, producing hardening. In this work we test that prediction and answer the question whether irradiation actually hardens or softens a nanofam. Ne ion irradiations of gold nanofoams were performed at room temperature for a total dose up to 4 dpa, and their mechanical behavior was measured by nanoindentation. We observe that hardness increases after irradiation, a result that we analyze in terms of the role of SFTs on the deformation mode of foams.

36 MATERIALS SCIENCE↗

Deformation mechanisms of Cu nanowires with planar defects

Molecular dynamics simulations are used to investigate the mechanical behavior of Cu nanowires (NWs) with planar defects such as grain boundaries (GBs), twin boundaries (TBs), stacking faults (SFs), etc. To investigate how the planar defects affect the deformation and fracture mechanisms of naowires, three types of nanowires are considered in this paper: (1) polycrystalline Cu nanowire; (2) single-crystalline Cu nanowire with twin boundaries; and (3) single-crystalline Cu nanowire with stacking faults. Because of the large fraction of atoms at grain boundaries, the energy of grain boundaries is higher than that of the grains. Thus, grain boundaries are proved to be the preferred sites for dislocations to nucleate. Moreover, necking and fracture prefer to occur at the grain boundary interface owing to the weakness of grain boundaries. For Cu nanowires in the presence of twin boundaries, it is found that twin boundaries can strength nanowires due to the restriction of the movement of dislocations. The pile up of dislocations on twin boundaries makes them rough, inducing high energy in twin boundaries. Hence, twin boundaries can emit dislocations, and necking initiates at twin boundaries. In the case of Cu nanowires with stacking faults, all pre-existing stacking faults in the nanowires are observed to disappear during deformation, giving rise to a fracture process resembling the samples without stacking fault.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Interfacial structure in epitaxial perovskite oxides on (001) Ge crystal

We investigated the interfacial structure of hetero-epitaxial SrZr{sub 0.68}Ti{sub 0.32}O{sub 3} thin film deposited on (001) Ge single crystal via transmission electron microscopy (TEM). The results from high-resolution scanning TEM and electron energy-loss spectroscopy show an atomically abrupt interface without secondary phase. We found misfit dislocations with Burgers vector of 1/2a 〈111〉 and threading dislocations with Burgers vector of a 〈100〉. Furthermore, we observed the coupling between dislocation half-loop and anti-phase boundary induced by the lattice terrace of Ge along 〈100〉 direction and their decoupling after annealing. We proposed models based on half-loop theory to interpret the coupling and the dislocation reactions.

36 MATERIALS SCIENCE↗

Effect of plastic deformation on deuterium retention and release in tungsten

The effect of severe plastic deformation on the deuterium retention in tungsten exposed to high-flux low-energy plasma (flux ∼ 10{sup 24 }D/m{sup 2}/s, energy ∼ 50 eV, and fluence up to 3 × 10{sup 26 }D/m{sup 2}) at the plasma generator Pilot-PSI was studied by thermal desorption spectroscopy and scanning electron microscopy. The desorption spectra in both reference and plastically deformed samples were deconvolved into three contributions attributed to the detrapping from dislocations, deuterium-vacancy clusters, and pores, respectively. The plastically induced deformation, resulting in high dislocation density, does not change the positions of the three peaks, but alters their amplitudes as compared to the reference material. The appearance of blisters detected by scanning electron microscopy and the desorption peak attributed to the release from pores (i.e., deuterium bubbles) were suppressed in the plastically deformed samples but only up to a certain fluence. Beyond 5 × 10{sup 25 }D/m{sup 2}, the release from the bubbles in the deformed material is essentially higher than in the reference material. Based on the presented results, we suggest that a dense dislocation network increases the incubation dose needed for the appearance of blisters, associated with deuterium bubbles, by offering numerous nucleation sites for deuterium clusters eventually transforming into deuterium-vacancy clusters by punching out jogs on dislocation lines.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals

Three-dimensional distribution of oxygen atoms at small-angle tilt boundaries (SATBs) in Czochralski-grown p-type silicon ingots was investigated by atom probe tomography combined with transmission electron microscopy. Oxygen gettering along edge dislocations composing SATBs, post crystal growth, was observed. The gettering ability of SATBs would depend both on the dislocation strain and on the dislocation density. Oxygen atoms would agglomerate in the atomic sites under the tensile hydrostatic stress larger than about 2.0 GPa induced by the dislocations. It was suggested that the density of the atomic sites, depending on the tilt angle of SATBs, determined the gettering ability of SATBs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Scattering induced by Al segregation in AlGaN/GaN heterostructures

The effect of Al segregation near dislocations on the mobility of two-dimensional electron gas in AlGaN/GaN heterostructure-based high-electron-mobility transistors was investigated. Exponentially varied composition fluctuation was effective in describing Al segregation near dislocations when calculating scattering behavior. Mobility, which was limited by Al segregation surrounding dislocation lines, was calculated to be in the order of 10{sup 3} cm{sup 2}/Vs to 10{sup 6} cm{sup 2}/Vs. Results indicated that the mobility in AlGaN/GaN heterojunction was enhanced upon the reduction of dislocation density at low temperature. This study contributes to generating higher electron mobility in AlGaN/GaN heterojunctions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm2 is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm2 is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

Qi, Meng (ORCID:0000000299430056)↗

Deformation microstructure and positive temperature dependence of flow stress in Ni{sub 3}Ge

Single crystalline specimens of Ni{sub 3}Ge were compressed along [0 0 1] at different temperatures. Temperature dependence of the critical resolved shear stress (τ{sub 0}(T)) has been obtained. Detailed measurements at cryogen temperatures (4.2-77 K temperature interval) showed that the increase of the yield stress with temperature starts at liquid helium temperature. The values of the apparent activation volume (V*) have been obtained as a result of stress relaxation tests repeated along the stress-strain curve at different stress levels at seven temperatures (77, 293, 373, 473, 573, 673, 773 K). Transmission electron microscopy (TEM) methods were used to analyze the evolution of dislocation structure with temperature and strain. The measurements of the straight dislocations fraction determined as δ = ρ{sub sd} / ρ, (ρ{sub sd} is the straight dislocation density, ρ is a total dislocation density) have been performed. The experimental data obtained in different tests in Ni{sub 3}Ge confirm two-stage nature of the positive temperature dependence of the flow stress of alloys with the L1{sub 2} structure. The model of thermal strengthening considering two different types of mechanisms, first acting at low temperatures and second at high has been proposed. Using this model the temperature dependence of the critical resolved shear stress has been approximated and the activation parameters of thermal strengthening of Ni{sub 3}Ge have been obtained.

36 MATERIALS SCIENCE↗

X-ray topography using the forward transmitted beam under multiple-beam diffraction conditions

X-ray topographs are taken for a sapphire wafer with the [0001] surface normal, as an example, by forward transmitted synchrotron x-ray beams combined with two-dimensional electronic arrays in the x-ray detector having a spatial resolution of 1 μm. They exhibit no shape deformation and no position shift of the dislocation lines on the topographs. Since the topography is performed under multiple-beam diffraction conditions, the topographic images of a single diffraction (two-wave approximation condition) or plural diffractions (six-wave approximation condition) can be recorded without large specimen position changes. As usual Lang topographs, it is possible to determine the Burgers vector of each dislocation line. Because of high parallelism of the incoming x-rays and linear sensitivity of the electronic arrays to the incident x-rays, the present technique can be used to visualize individual dislocations in single crystals of the dislocation density as high as 1 × 10{sup 5} cm{sup −2}.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗