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At least 1,531 records · Page 85
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Victim Simulator for Victim Detection Radar

Testing of victim detection radars has traditionally used human subjects who volunteer to be buried in, or climb into a space within, a rubble pile. This is not only uncomfortable, but can be hazardous or impractical when typical disaster scenarios are considered, including fire, mud, or liquid waste. Human subjects are also inconsistent from day to day (i.e., they do not have the same radar properties), so quantitative performance testing is difficult. Finally, testing a multiple-victim scenario is difficult and expensive because of the need for multiple human subjects who must all be coordinated. The solution is an anthropomorphic dummy with dielectric properties that replicate those of a human, and that has motions comparable to human motions for breathing and heartbeat. Two airfilled bladders filled and drained by solenoid valves provide the underlying motion for vinyl bags filled with a dielectric gel with realistic properties. The entire assembly is contained within a neoprene wetsuit serving as a "skin." The solenoids are controlled by a microcontroller, which can generate a variety of heart and breathing patterns, as well as being reprogrammable for more complex activities. Previous electromagnetic simulators or RF phantoms have been oriented towards assessing RF safety, e.g., the measurement of specific absorption rate (SAR) from a cell phone signal, or to provide a calibration target for diagnostic techniques (e.g., MRI). They are optimized for precise dielectric performance, and are typically rigid and immovable. This device is movable and "positionable," and has motion that replicates the small-scale motion of humans. It is soft (much as human tissue is) and has programmable motions.

Lux, James P.↗
NASA NTRS2013

Conducting nanotubes or nanostructures based composites, method of making them and applications

An electromagnetic interference (EMI) shielding material includes a matrix of a dielectric or partially conducting polymer, such as foamed polystyrene, with carbon nanotubes or other nanostructures dispersed therein in sufficient concentration to make the material electrically conducting. The composite is formed by dispersing the nanotube material in a solvent in which the dielectric or partially conducting polymer is soluble and mixing the resulting suspension with the dielectric or partially conducting polymer. A foaming agent can be added to produce a lightweight foamed material. An organometallic compound can be added to enhance the conductivity further by decomposition into a metal phase.

Gupta, Mool C.↗
NASA NTRS2013

Impedance Discontinuity Reduction Between High-Speed Differential Connectors and PCB Interfaces

High-speed serial communication (i.e., Gigabit Ethernet) requires differential transmission and controlled impedances. Impedance control is essential throughout cabling, connector, and circuit board construction. An impedance discontinuity arises at the interface of a high-speed quadrax and twinax connectors and the attached printed circuit board (PCB). This discontinuity usually is lower impedance since the relative dielectric constant of the board is higher (i.e., polyimide approx. = 4) than the connector (Teflon approx. = 2.25). The discontinuity can be observed in transmit or receive eye diagrams, and can reduce the effective link margin of serial data networks. High-speed serial data network transmission improvements can be made at the connector-to-board interfaces as well as improving differential via hole impedances. The impedance discontinuity was improved by 10 percent by drilling a 20-mil (approx. = 0.5-mm) hole in between the pin of a differential connector spaced 55 mils (approx. = 1.4 mm) apart as it is attached to the PCB. The effective dielectric constant of the board can be lowered by drilling holes into the board material between the differential lines in a quadrax or twinax connector attachment points. The differential impedance is inversely proportional to the square root of the relative dielectric constant. This increases the differential impedance and thus reduces the above described impedance discontinuity. The differential via hole impedance can also be increased in the same manner. This technique can be extended to multiple smaller drilled holes as well as tapered holes (i.e., big in the middle followed by smaller ones diagonally).

Navidi, Sal↗
NASA NTRS2014

A General Reliability Model for Ni-BaTiO3-Based Multilayer Ceramic Capacitors

The evaluation of multilayer ceramic capacitors (MLCCs) with Ni electrode and BaTiO3 dielectric material for potential space project applications requires an in-depth understanding of their reliability. A general reliability model for Ni-BaTiO3 MLCC is developed and discussed. The model consists of three parts: a statistical distribution; an acceleration function that describes how a capacitor's reliability life responds to the external stresses, and an empirical function that defines contribution of the structural and constructional characteristics of a multilayer capacitor device, such as the number of dielectric layers N, dielectric thickness d, average grain size, and capacitor chip size A. Application examples are also discussed based on the proposed reliability model for Ni-BaTiO3 MLCCs.

statistical modeling↗
NASA NTRS2013

Electrical Capacitance Volume Tomography for the Packed Bed Reactor ISS Flight Experiment

Fixed packed bed reactors are compact, require minimum power and maintenance to operate, and are highly reliable. These features make this technology a highly desirable unit operation for long duration life support systems in space. NASA is developing an ISS experiment to address this technology with particular focus on water reclamation and air revitalization. Earlier research and development efforts funded by NASA have resulted in two hydrodynamic models which require validation with appropriate instrumentation in an extended microgravity environment. To validate these models, the instantaneous distribution of the gas and liquid phases must be measured.Electrical Capacitance Volume Tomography (ECVT) is a non-invasive imaging technology recently developed for multi-phase flow applications. It is based on distributing flexible capacitance plates on the peripheral of a flow column and collecting real-time measurements of inter-electrode capacitances. Capacitance measurements here are directly related to dielectric constant distribution, a physical property that is also related to material distribution in the imaging domain. Reconstruction algorithms are employed to map volume images of dielectric distribution in the imaging domain, which is in turn related to phase distribution. ECVT is suitable for imaging interacting materials of different dielectric constants, typical in multi-phase flow systems. ECVT is being used extensively for measuring flow variables in various gas-liquid and gas-solid flow systems. Recent application of ECVT include flows in risers and exit regions of circulating fluidized beds, gas-liquid and gas-solid bubble columns, trickle beds, and slurry bubble columns. ECVT is also used to validate flow models and CFD simulations. The technology is uniquely qualified for imaging phase concentrations in packed bed reactors for the ISS flight experiments as it exhibits favorable features of compact size, low profile sensors, high imaging speed, and flexibility to fit around columns of various shapes and sizes. ECVT is also safer than other commonly used imaging modalities as it operates in the range of low frequencies (1 MHz) and does not radiate radioactive energy. In this effort, ECVT is being used to image flow parameters in a packed bed reactor for an ISS flight experiment.

Tomography↗
NASA NTRS2014

A General Reliability Model for Ni-BaTiO3-Based Multilayer Ceramic Capacitors

The evaluation for potential space project applications of multilayer ceramic capacitors (MLCCs) with Ni electrode and BaTiO3 dielectric material requires an in-depth understanding of the MLCCs reliability. A general reliability model for Ni-BaTiO3 MLCCs is developed and discussed in this paper. The model consists of three parts: a statistical distribution; an acceleration function that describes how a capacitors reliability life responds to external stresses; and an empirical function that defines the contribution of the structural and constructional characteristics of a multilayer capacitor device, such as the number of dielectric layers N, dielectric thickness d, average grain size r, and capacitor chip size A. Application examples are also discussed based on the proposed reliability model for Ni-BaTiO3 MLCCs.

statistical modeling↗
NASA NTRS2015

Nanoelectric Materials Laboratory Development

The Ultracapacitor Research and Development project is a collaborative effort between the NASA Marshall Space Flight Center's (MSFC's) ES43 Parts, Packaging, and Fabrication Branch and the EM41 Nonmetallic Materials Branch. NASA's Ultracapacitor Research is an effort to develop solid-state energy storage devices through processing of ceramic materials into printable dielectric inks, which can be formed and treated to produce solid state ultracapacitor cells capable of exceeding lithium-ion battery energy density at a fraction of the weight. Research and development efforts into solid state ultracapacitors have highlighted a series of technical challenges such as understanding as-received nature of ceramic powders, treatment and optimization of ceramic powders, dielectric and conductor ink formulation, and firing of printed (green) ultracapacitor cells. Two facilities have been continually developed since project inception: the Additive Electronics Lab in Bldg. 4487 and the Nanoelectric Materials Lab in Bldg. 4602. The Nanoelectric Materials Lab has become a unique facility at MSFC, capable of custom processing a wide range of media for additive electronics. As research has progressed, it was discovered that additional in-house processing was necessary to achieve smaller, more uniform particle diameters. A vibratory mill was obtained that can agitate powder and media in three directions, which has shown to be much more effective than ball milling. However, in order to understand the effects of milling, a particle size analysis system has been installed to characterize as-received and milled materials Continued research into the ultracapacitor technology included advanced milling and optimization of ceramic nanoparticles, fluidized bed treatment of atomic-layer deposition- (ALD-) coated ceramic particles, custom development of dielectric and conductor inks, as well as custom ink precursors such as polyvinylidene diflouride- (PVDF-) loaded vehicles. Experiments with graphene-based inks were also conducted.

Allen, Lee↗
NASA NTRS2017

Self-Healable Electrical Insulation for High Voltage Applications

Polymeric aircraft electrical insulation normally degrades by partial discharge with increasing voltage, which causes excessive localized Joule heating in the material and ultimately leads to dielectric failure of the insulator through thermal breakdown. Developing self-healing insulation could be a viable option to mitigate permanent mechanical degradation, thus increasing the longevity of the insulation. Instead of relying on catalyst and monomer-filled microcapsules to crack, flow, and cure at the damaged sites described in well-published mechanisms, establishment of ionic crosslinks could allow for multiple healing events to occur with the added benefit of achieving full recovery strength under certain thermal environments. This could be possible if the operating temperature of the insulator is the same as or close to the temperature where ionic crosslinks are formed. Surlyn, a commercial material with ionic crosslinks, was investigated as a candidate self-healing insulator based off prior demonstrations of self-healing behavior. Thin films of varying thicknesses were investigated and the effects of thickness on the dielectric strength were evaluated and compared to representative polymer insulators. The effects of thermal conditioning on the recovery strength and healing were observed as a function of time following dielectric breakdown. Moisture absorption was also studied to determine if moisture absorption rates in Surlyn were lower than that of common polyimides.

electrical insulation↗
NASA NTRS2018

Characterization of Rapid Charging Events Due to Sheath Capacitance and Impact on the International Space Station Plasma Hazard Process

During an Extravehicular Activity (EVA), if the Extravehicular Mobility Unit (EMU) makes galvanic contact with the International Space Station (ISS), a negative Floating Potential (FP) can lead to an arcing hazard when it exceeds -45.5 V, and a positive FP can produce a DC current high enough to stimulate the astronaut’s muscles (5 mA), and also cause a hazard. The Boeing Space Environments team developed and utilizes a Plasma Interaction Model (PIM) in order to calculate the ISS FP based on the plasma environment, ISS velocity, geomagnetic field, solar array and ISS orientation, and solar array regulation to support EVA planning operations. Presently, the model excludes the sheath capacitance, resulting in the total potential drop being across the dielectric surface of the vehicle. Data from the Floating Potential Measurement Unit (FPMU) show this assumption to be generally true. However, Rapid Charging Events (RCE) are often observed in the FPMU data at eclipse exit when the electron number density, Ne, is low (less than 5(sub e)10 m (exp-3)). During these events, the FP can rise more than 40 V in one to five seconds. There is then a relaxation phase where the FP drops back to the normal FP values. The PIM model is not capable of producing these RCEs. It was thought that the inclusion of the sheath in PIM could improve the charging predictions, particularly as related to RCEs. A parametric study was performed to determine what portion of the measured FP is across the sheath for a range of Ne experienced by the ISS, and if the inclusion of the sheath in PIM is necessary. Results show that the potential drop across the sheath is negligible at times when the N(sub e) is greater than 1(sub e)11 m-3. However, there appears to be a transitional region between 1(sub e)10 m(exp -3) and 1(sub e)11 m(exp -3) where the sheath capacitance becomes more significant. During those conditions the potential drop across the sheath can be larger than the potential drop across the dielectric for short periods (1-5 seconds). These results agree remarkably well with measurements made by the FPMU. The inclusion of the sheath explains why high charging measurements occur when the Ne is low at eclipse exit and even times when the solar arrays are not a significant driver (i.e., potentials often rise as the ISS flies through spread-F). Results also show that the RCEs are not a safety concern because the potential drop across the dielectric surface does not exceed -45.5 V. In that case, the EMU would not arc. This gives high confidence in the low probability of an arcing hazard occurring.

plasma environment↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗
NASA NTRS2019

Low-Loss Microstrip Transmission Line Fabricated with Improved Liftoff Process

The µ-Spec integrated spectrometer operating at ~500 GHz, employs thin film superconducting Nb microstrip transmission lines deposited directly on a thin (450 nm) single-crystal silicon dielectric. This single-crystal silicon layer is chosen as the dielectric layer due to its low intrinsic loss, with the goal of achieving both high- efficiency and precise phase control in a compact spectrometer architecture. To avoid roughening or etching through the thin single-crystal silicon dielectric a liftoff technique was developed for patterning these microstrip transmission lines and ground plane structures. This two- layer liftoff process was designed for use with sputter deposition and resulted in a US patent. Although this original technique provided precise control of linewidth, results of initial prototype spectrometer devices and separate diagnostic co-planer waveguide resonator devices showed that unexpected loss was being introduced due to the lift-off process. This extra loss was believed to be due to the “tails” (thin tapered regions) at the edge of the metal traces resulting from the sputtering process, as well as an amorphous oxide layer at the Nb-Si interface. We have since demonstrated an improved lift-off technique, which provides a clean metal-Si interface and removes the loss-inducing tails by a two-step selective etching method. This results in a decrease in microwave loss by more than an order of magnitude when measured in co-planar waveguide microwave resonator structures. We present these microwave test results and also SEM and TEM images of the microstrip interfaces and edge profiles before and after application of the improved process.

Hess, Larry A.↗
NASA NTRS2019

Increased Flexibility in Polyimide Aerogel Substrates for Conformal, Lightweight Antennas

Polyimide aerogels are desirable for many aerospace applications due to their high porosity, low density, low thermal conductivity, and superior mechanical properties. They have also been demonstrated as lightweight substrates for antennas since they possess very low dielectric constants, approaching one as density decreases. Increasing the flexibility of the aerogel would allow them to be used as conformal antennas for use on aerospace vehicles, leading to significant space and weight savings. In this research, we demonstrate that the flexibility can be increased depending on the polyimide oligomer backbone structures. We have substituted up to 75 mol % of the aromatic diamines typically used in polyimide aerogels with 1, 3-bis (4-aminophenoxy)-2, 2-dimethylpropane (BAPN). Twenty different formulations of polyimide aerogels were synthesized from 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) and a combination of BAPN and 2,2'-dimethylbenxidine (DMBZ) and cross-linked with 1, 3, 5 triaminophenoxybenzene (TAB). The polymer concentration, n-value, and molar concentration of BAPN and DMBZ were varied to determine an ideal formulation that has both a high bend radius and low dielectric constant. With only aromatic diamines in the backbone, the aerogels are flexible only as very thin films, nominally 0.5 mm thick. Samples containing at least 25 mol % BAPN have higher flexibility in substrates as thick as 2-3 mm and dielectric constants ranging from 1.11-1.26.

Cashman, Jessica↗
NASA NTRSDate not supplied

TPSAS-NF1676L-31381-DND

- Accumulation of excess negative charge generates potential differences between spacecraft ground and space (frame potential), between two points on the spacecraft surface or within materials (differential potential) - An electrostatic discharge (ESD) results when electric fields associated with potential differences (E = -∇Φ) exceed the dielectric breakdown strength of materials allowing charge to flow in an arc - Magnitude of damage depends on energy available to an arc E = ½CV^2 - Charging to a potential V depends on electrical properties of materials - Surface and volume resistivity - Dielectric constant - Secondary and backscattered electron yields, photoemission yields - Dielectric breakdown strength

Joseph I. Minow↗
NASA NTRSDate not supplied

FORWARD AND INVERSE L-BAND RADIATIVE TRANSFER MODELING OVER THE DRY CHACO, USING SMOS OBSERVATIONS, LAND SURFACE MODELING AND IN SITU DATA

Passive microwave L-band remote sensing is well known for its sensitivity to surface soil moisture over land.The signal is also affected by other dynamic variables such as vegetation and soil salinity. In this research, L-band microwave observations of the Soil Moisture Ocean Salinity (SMOS) mission are used to explore soil surface salinity, moisture and vegetation, in the Argentinean Dry Chaco, an area with possible emerging dryland salinity. A Radiative Transfer Model (RTM) with inclusion of a correction to the soil’s dielectric constant for salinity was used in forward and inverse mode, using either in situ data or Catchment Land Surface Model (CLSM) simulations as RTM input. The forward analysis pointed out shortcomings in the modeled soil moisture and soil surface temperature estimates. The impact of salinity on forward simulations over the Dry Chaco was limited.The RTM inversion using 10 years of SMOS brightness temperature observations resulted in realistic estimates of vegetation and roughness, both with and withouto ptimizing a correction term for the dielectric constant in terms of salinity equivalents. However,the retrieval of the correction term to the dielectric constant was very uncertain and not representative of soil surface salinity, but rather of open water, texture uncertainty or soil moisture bias.

L-band↗
NASA NTRSDate not supplied

Progresses in Developing Micro-Multilayer Multifunctional Electrical Insulation (MMEI) System for High Voltage Applications

Development of the novel patented high voltage insulation system, namely micro-multilayer multifunctional electrical insulation (MMEI) was continued particularly for the future hybrid or all electric aircraft applications. Initially, the concept and feasibility of the MMEI system were successfully demonstrated with its exceptionally high dielectric breakdown voltage via optimizing the multilayer structures of the Kapton® PI films and binder layers such as PFA in terms of individual film thickness and layer configuration. Overall, MMEI structures outperformed most of the state-of-the-art (SOA) polymer insulation materials or structures. Since then, further optimizations and improvement of the system were pursued with specific emphasis on multifunctionalities such as moisture blocking, partial discharge (PD) resistance, durability, etc. Efforts have been also continued to identify the controlling mechanisms for the major improvement in dielectric strength of the MMEI structures via 3-dimensional dielectric failure mode analysis. At the same time, significant progress has been made in scaling up the MMEI structures and assessing their commercial applicability and manufacturability by developing full-scale prototypes of electrical components, such as power cable and bus bar. Overall progresses on the MMEI development to date will be presented in this paper.

Novel Electrical Insulation↗
NASA NTRS2021

Permittivity Measurement System Using Stripline Method for the Europa Clipper Mission

High radiation Jovian environment can deposit electrons in highly resistive dielectric materials, which could result in internal electrostatic discharge (IESD) causing damage to sensitive electronics such as the radar for Europa Assessment and Sounding: Ocean to Near-Surface (REASON) instrument on NASA’s Europa Clipper mission. Special dielectric materials like static dissipative Polyetheretherketone (PEEK) ESD are under consideration for the Europa Clipper mission. PEEK loaded with carbon nanofibers improves the ESD performance for this material but the RF characteristics are unknown. We have developed a method to characterize the dielectric constant of a material as a function of frequency and temperature down to 30K. We present the measurement results of four samples of ESD. The measured data shows the permittivity of TECAPEEK ESD 11 is in the range of 7 to 10 at HF and in the range of 6.8 to 8.3 for VHF frequencies. The change in permittivity of ESD 11 down to 30 K is less than 7% at HF and less than 3% at VHF frequency. The sample to sample variability can be attributed to the inhomogeneity of the material.

Decrossas, Emmanuel↗
NASA NTRSDate not supplied

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.

High temperature↗