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At least 1,531 records · Page 85
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DOE OSTI2014

Analytical modeling of AlGaN/AlN/GaN heterostructures including effects of distributed surface donor states

In this paper, a physics based analytical model is presented for calculation of the two-dimensional electron gas density and the bare surface barrier height of AlGaN/AlN/GaN material stacks. The presented model is based on the concept of distributed surface donor states and the self-consistent solution of Poisson equation at the different material interfaces. The model shows good agreement with the reported experimental data and can be used for the design and characterization of advanced GaN devices for power and radio frequency applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

An analytical model to predict curvature effects of the carbon nanotube on the overall behavior of nanocomposites

In this study, analytical expressions are introduced to provide a better understanding of carbon nanotubes (CNTs) curvature on the overall behavior of nanocomposites. The curviness of CNT is modeled as the wave geometries, and the transformed physical characteristics are applied to micromechanical framework. Since five independent elastic constants of CNTs are essential to derive the waviness effect, atomistic molecular statics simulations with varying nanotube radii are conducted. Influences of CNT curviness on the effective stiffness of the nanocomposites are analyzed, noting that the curvature effect is significantly influential on the effective stiffness of the nanocomposites, and it may improve or reduce the reinforcing effect depending on the orientation of CNTs. In addition, the predictions are compared with experimental data of the CNT-reinforced nanocomposites to assess the reliability of the proposed method. The developed constitutive model is expected to be used to determine the volume concentration of the reinforcing CNTs and mechanical responses of CNT-reinforced composites under various CNT curvature, radius, and orientation conditions.

42 ENGINEERING↗
DOE OSTI2014

Analytic matrix elements for the two-electron atomic basis with logarithmic terms

The two-electron problem for the helium-like atoms in S-state is considered. The basis containing the integer powers of ln r, where r is a radial variable of the Fock expansion, is studied. In this basis, the analytic expressions for the matrix elements of the corresponding Hamiltonian are presented. These expressions include only elementary and special functions, what enables very fast and accurate computation of the matrix elements. The decisive contribution of the correct logarithmic terms to the behavior of the two-electron wave function in the vicinity of the triple-coalescence point is reaffirmed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Absolute analytical prediction of photonic crystal guided mode resonance wavelengths

A class of photonic crystal resonant reflectors known as guided mode resonant filters are optical structures that are widely used in the field of refractive index sensing, particularly in biosensing. For the purposes of understanding and design, their behavior has traditionally been modeled numerically with methods such as rigorous coupled wave analysis. Here it is demonstrated how the absolute resonance wavelengths of such structures can be predicted by analytically modeling them as slab waveguides in which the propagation constant is determined by a phase matching condition. The model is experimentally verified to be capable of predicting the absolute resonance wavelengths to an accuracy of within 0.75 nm, as well as resonance wavelength shifts due to changes in cladding index within an accuracy of 0.45 nm across the visible wavelength regime in the case where material dispersion is taken into account. Furthermore, it is demonstrated that the model is valid beyond the limit of low grating modulation, for periodically discontinuous waveguide layers, high refractive index contrasts, and highly dispersive media.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Analytical estimation of the correlation dimension of integer lattices

Recently [L. Lacasa and J. Gómez-Gardeñes, Phys. Rev. Lett. 110, 168703 (2013)], a fractal dimension has been proposed to characterize the geometric structure of networks. This measure is an extension to graphs of the so called correlation dimension, originally proposed by Grassberger and Procaccia to describe the geometry of strange attractors in dissipative chaotic systems. The calculation of the correlation dimension of a graph is based on the local information retrieved from a random walker navigating the network. In this contribution, we study such quantity for some limiting synthetic spatial networks and obtain analytical results on agreement with the previously reported numerics. In particular, we show that up to first order, the correlation dimension β of integer lattices ℤ{sup d} coincides with the Haussdorf dimension of their coarsely equivalent Euclidean spaces, β = d.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Analytical model of electron transport in polycrystalline, degenerately doped ZnO films

An analytical description of the charge carrier transport, valid for non-degenerated and degenerated semiconductors, was developed, critically reviewed, and fitted to the temperature-dependent Hall mobility data of magnetron sputtered, degenerately doped ZnO:Al films. Our extended model for grain boundary scattering in semiconductors of arbitrary degeneracy is based on previous models from literature and suitable to describe the Hall mobility of the carriers as a function of the free carrier concentration and the temperature at the same time. It is mathematically simple enough for a fast fit procedure, which is not possible with most of the previous models. Applying a combined transport model consisting of ionized impurity scattering, phonon scattering, and grain boundary scattering in degenerate semiconductors, we were able to determine the trap density at the grain boundaries Nₜ ≈ 3×10¹³ to 5×10¹³cm⁻² and the deformation potential E{sub ac} in the range of 5 eV to 9 eV depending on the details of the transport model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

General analytical approach for sound transmission loss analysis through a thick metamaterial plate

We report theoretically and numerically on the sound transmission loss performance through a thick plate-type acoustic metamaterial made of spring-mass resonators attached to the surface of a homogeneous elastic plate. Two general analytical approaches based on plane wave expansion were developed to calculate both the sound transmission loss through the metamaterial plate (thick and thin) and its band structure. The first one can be applied to thick plate systems to study the sound transmission for any normal or oblique incident sound pressure. The second approach gives the metamaterial dispersion behavior to describe the vibrational motions of the plate, which helps to understand the physics behind sound radiation through air by the structure. Computed results show that high sound transmission loss up to 72 dB at 2 kHz is reached with a thick metamaterial plate while only 23 dB can be obtained for a simple homogeneous plate with the same thickness. Such plate-type acoustic metamaterial can be a very effective solution for high performance sound insulation and structural vibration shielding in the very low-frequency range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

An analytic expression for the sheath criterion in magnetized plasmas with multi-charged ion species

The generalized Bohm criterion in magnetized multi-component plasmas consisting of multi-charged positive and negative ion species and electrons is analytically investigated by using the hydrodynamic model. It is assumed that the electrons and negative ion density distributions are the Boltzmann distribution with different temperatures and the positive ions enter into the sheath region obliquely. Our results show that the positive and negative ion temperatures, the orientation of the applied magnetic field and the charge number of positive and negative ions strongly affect the Bohm criterion in these multi-component plasmas. To determine the validity of our derived generalized Bohm criterion, it reduced to some familiar physical condition and it is shown that monotonically reduction of the positive ion density distribution leading to the sheath formation occurs only when entrance velocity of ion into the sheath satisfies the obtained Bohm criterion. Also, as a practical application of the obtained Bohm criterion, effects of the ionic temperature and concentration as well as magnetic field on the behavior of the charged particle density distributions and so the sheath thickness of a magnetized plasma consisting of electrons and singly charged positive and negative ion species are studied numerically.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Analytic structure of the S-matrix for singular quantum mechanics

The analytic structure of the S-matrix of singular quantum mechanics is examined within a multichannel framework, with primary focus on its dependence with respect to a parameter (Ω) that determines the boundary conditions. Specifically, a characterization is given in terms of salient mathematical and physical properties governing its behavior. These properties involve unitarity and associated current-conserving Wronskian relations, time-reversal invariance, and Blaschke factorization. The approach leads to an interpretation of effective nonunitary solutions in singular quantum mechanics and their determination from the unitary family.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Analytical theory of the space-charge region of lateral p-n junctions in nanofilms

There is growing interest in fabricating conventional semiconductor devices in a nanofilm which could be a 3D material with one reduced dimension (e.g., silicon-on-insulator (SOI) film), or single/multiple layers of a 2D material (e.g., MoS{sub 2}), or a two dimensional electron gas/two dimensional hole gas (2DEG/2DHG) layer. Lateral p-n junctions are essential parts of these devices. The space-charge region electrostatics in these nanofilm junctions is strongly affected by the surrounding field, unlike in bulk junctions. Current device physics of nanofilms lacks a simple analytical theory of this 2D electrostatics of lateral p-n junctions. We present such a theory taking into account the film's thickness, permittivity, doping, interface charge, and possibly different ambient permittivities on film's either side. In analogy to the textbook theory of the 1D electrostatics of bulk p-n junctions, our theory yields simple formulas for the depletion width, the extent of space-charge tails beyond this width, and the screening length associated with the space-charge layer in nanofilm junctions; these formulas agree with numerical simulations and measurements. Our theory introduces an electrostatic thickness index to classify nanofilms into sheets, bulk and intermediate sized.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Analytic nuclear forces and molecular properties from full configuration interaction quantum Monte Carlo

Unbiased stochastic sampling of the one- and two-body reduced density matrices is achieved in full configuration interaction quantum Monte Carlo with the introduction of a second, “replica” ensemble of walkers, whose population evolves in imaginary time independently from the first and which entails only modest additional computational overheads. The matrices obtained from this approach are shown to be representative of full configuration-interaction quality and hence provide a realistic opportunity to achieve high-quality results for a range of properties whose operators do not necessarily commute with the Hamiltonian. A density-matrix formulated quasi-variational energy estimator having been already proposed and investigated, the present work extends the scope of the theory to take in studies of analytic nuclear forces, molecular dipole moments, and polarisabilities, with extensive comparison to exact results where possible. These new results confirm the suitability of the sampling technique and, where sufficiently large basis sets are available, achieve close agreement with experimental values, expanding the scope of the method to new areas of investigation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

An analytic formula for the relativistic incoherent Thomson backscattering spectrum for a drifting bi-Maxwellian plasma

An analytic formula has been derived for the relativistic incoherent Thomson backscattering spectrum for a drifting anisotropic plasma when the scattering vector is parallel to the drifting direction. The shape of the scattering spectrum is insensitive to the electron temperature perpendicular to the scattering vector, but its amplitude may be modulated. As a result, while the measured temperature correctly represents the electron distribution parallel to the scattering vector, the electron density may be underestimated when the perpendicular temperature is higher than the parallel temperature. Since the scattering spectrum in shorter wavelengths is greatly enhanced by the existence of drift, the diagnostics might be used to measure local electron current density in fusion plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap semiconductors. The model is based on an analytic description of two key features, which capture the main physical phenomena related to TFETs: (1) the potential profile from source to channel and (2) the elliptic curvature of the complex bands in the bandgap region. It is proposed to use 1D Poisson's equations in the source and the channel to describe the potential profile in homojunction TFETs. This allows to quantify the impact of source/drain doping on device performance, an aspect usually ignored in TFET modeling but highly relevant in ultra-scaled devices. The compact model is validated by comparison with state-of-the-art quantum transport simulations using a 3D full band atomistic approach based on non-equilibrium Green's functions. It is shown that the model reproduces with good accuracy the data obtained from the simulations in all regions of operation: the on/off states and the n/p branches of conduction. This approach allows calculation of energy-dependent band-to-band tunneling currents in TFETs, a feature that allows gaining deep insights into the underlying device physics. The simplicity and accuracy of the approach provide a powerful tool to explore in a quantitatively manner how a wide variety of parameters (material-, size-, and/or geometry-dependent) impact the TFET performance under any bias conditions. The proposed model presents thus a practical complement to computationally expensive simulations such as the 3D NEGF approach.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Scattering study of the Ne + NeH{sup +}(v{sub 0} = 0, j{sub 0} = 0) → NeH{sup +} + Ne reaction on an ab initio based analytical potential energy surface

Initial state selected dynamics of the Ne + NeH{sup +}(v{sub 0} = 0, j{sub 0} = 0) → NeH{sup +} + Ne reaction is investigated by quantum and statistical quantum mechanical (SQM) methods on the ground electronic state. The three-body ab initio energies on a set of suitably chosen grid points have been computed at CCSD(T)/aug-cc-PVQZ level and analytically fitted. The fitting of the diatomic potentials, computed at the same level of theory, is performed by spline interpolation. A collinear [NeHNe]{sup +} structure lying 0.72 eV below the Ne + NeH{sup +} asymptote is found to be the most stable geometry for this system. Energies of low lying vibrational states have been computed for this stable complex. Reaction probabilities obtained from quantum calculations exhibit dense oscillatory structures, particularly in the low energy region and these get partially washed out in the integral cross section results. SQM predictions are devoid of oscillatory structures and remain close to 0.5 after the rise at the threshold thus giving a crude average description of the quantum probabilities. Statistical cross sections and rate constants are nevertheless in sufficiently good agreement with the quantum results to suggest an important role of a complex-forming dynamics for the title reaction.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2016

One-baryon spectrum and analytical properties of one-baryon dispersion curves in 3 + 1 dimensional strongly coupled lattice QCD with three flavors

Considering a 3 + 1 dimensional lattice quantum chromodynamics (QCD) model defined with the improved Wilson action, three flavors, and 4 × 4 Dirac spin matrices, in the strong coupling regime, we reanalyze the question of the existence of the eightfold way baryons and complete our previous work where the existence of isospin octet baryons was rigorously solved. Here, we show the existence of isospin decuplet baryons which are associated with isolated dispersion curves in the subspace of the underlying quantum mechanical Hilbert space with vectors constructed with an odd number of fermion and antifermion basic quark and antiquark fields. Moreover, smoothness properties for these curves are obtained. The present work deals with a case for which the traditional method to solve the implicit equation for the dispersion curves, based on the use of the analytic implicit function theorem, cannot be applied. We do not have only one but two solutions for each one-baryon decuplet sector with fixed spin third component. Instead, we apply the Weierstrass preparation theorem, which also provides a general method for the general degenerate case. This work is completed by analyzing a spectral representation for the two-baryon correlations and providing the leading behaviors of the field strength normalization and the mass of the spectral contributions with more than one-particle. These are needed results for a rigorous analysis of the two-baryon and meson-baryon particle spectra.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Strengthening of reinforced concrete beams with basalt-based FRP sheets: An analytical assessment

In this paper the effectiveness of the flexural strengthening of RC beams through basalt fiber-reinforced sheets is investigated. The non-linear flexural response of RC beams strengthened with FRP composites applied at the traction side is described via an analytical formulation. Validation results and some comparative analyses confirm soundness and consistency of the proposed approach, and highlight the good mechanical performances (in terms of strength and ductility enhancement of the beam) produced by basalt-based reinforcements in comparison with traditional glass or carbon FRPs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Analytical and numerical analysis of the slope of von Mises planar trusses

In the present paper, there are presented post-critical stress states which will occur at loading by vertical shift of the top joint in the direction downwards. The formation of certain stress states depends on the size of the angle formed by a straight beam of the von Mises planar truss with horizontal plane. Numerical and analytical methods and their problems with finding the angle were described. The numerical solution applies the method of searching for a minimum of potential energy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗