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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,531 records · Page 85
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Potential distribution in voltage terminating structures with floating p-n junction rings of silicon radiation detectors

A model of the potential distribution in voltage terminating structures (VTSs) with floating p{sup +}-n junction rings in silicon radiation detectors is proposed. The model is based on experimental current-voltage characteristic of interring gaps, measured for detectors based on high-resistivity silicon with resistivities from 1 to 25 k{Omega} cm. The physical basis of the model is the injection principle of current flow through VTS interring gaps, which becomes possible at a certain electric field distribution in space charge regions of p{sup +}-n junctions of the sensitive contact and rings. It is shown that the injection current flow is a universal operation principle of the VTS with floating rings, which leads to rigid stabilization of potentials of individual rings. As a result, it becomes possible to divide the potential irrespective of the semiconductor material resistivity.

36 MATERIALS SCIENCE↗
DOE OSTI2011

I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier

The I-V characteristics of high-voltage 4H-SiC diodes with a Schottky barrier {approx}1.1 eV in height are measured and analyzed. The forward I-V characteristics proved to be close to 'ideal' in the temperature range of 295-470 K. The reverse I-V characteristics are adequately described by the model of thermionic emission at the voltages to 2 kV in the temperature range of 361-470 K if, additionally, a barrier lowering with an increase in the band bending in the semiconductor is taken into account.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Field-effect transistor based on ZnO nanorods with a variable threshold cutoff voltage

This study is concerned with the fabrication and electrical characteristics of short-channel (2 {mu}m) field-effect transistors (FETs) based on ZnO nanorods. In FET fabrication, single-crystal ZnO nanorods are grown using the catalyst-free chemical vapor deposition (CVD) method. Although the short-channel ZnO-nanorod FETs exhibit good electrical characteristics (a transconductance of 100 nS, electron mobility of 6 cm{sup 2} V{sup -1} s{sup -1}, and a large turn-ON/OFF ratio of 10{sup 4}), their characteristics significantly depend on the length of the nanorods. The effect of the drain-source voltage on the threshold gate voltage is studied.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Voltage dependence of the differential capacitance of a p{sup +}-n junction

The dependences of the differential capacitance and current of a p{sup +}-n junction with a uniformly doped n region on the voltage in the junction region are calculated. The p{sup +}-n junction capacitance controls the charge change in the junction region taking into account a change in the electric field of the quasi-neutral n region and a change in its bipolar drift mobility with increasing excess charge-carrier concentration. It is shown that the change in the sign of the p{sup +}-n junction capacitance with increasing injection level is caused by a decrease in the bipolar drift mobility as the electron-hole pair concentration in the n region increases. It is shown that the p{sup +}-n junction capacitance decreases with increasing reverse voltage and tends to a constant positive value.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

The prerequisites for electron storage in the quantum well of a metal–oxide–p{sup +}-Si resonant-tunneling structure and the effect of the stored charge on the voltage distribution are theoretically investigated. Systems with SiO{sub 2}, HfO{sub 2}, and TiO{sub 2} insulators are studied. It is demonstrated that the occurrence of a charge in the well in the case of resonant transport can be expected in structures on substrates with an acceptor concentration from (5–6) × 10{sup 18} to (2–3) × 10{sup 19} cm{sup –3} in the range of oxide thicknesses dependent on this concentration. In particular, the oxide layer thickness in the structures with SiO{sub 2}/p{sup +}-Si(10{sup 19} cm{sup –3}) should exceed ~3 nm. The electron density in the well can reach ~10{sup 12} cm{sup –2} and higher. However, the effect of this charge on the electrostatics of the structure becomes noticeable only at relatively high voltages far above the activation of resonant transport through the first subband.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers

An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the voltage drop across the diode. The physical mechanism responsible for this “paradoxical” result is analyzed. The validity of the analytical result is confirmed by a numerical calculation with software that takes into account the whole set of nonlinear effects caused by a high injection level in the base layer and by heavy doping of the emitter region.

36 MATERIALS SCIENCE↗
DOE OSTI2017

High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency

The energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors, and photothyristors controlled by picosecond laser pulses during the formation of voltage pulses on resistive load R{sub L} is studied for the first time. It is shown that at the given values of the resistive load R{sub L}, pulse amplitude U{sub R} and duration t{sub R}, there exist optimum device areas, energies, and absorbances of control radiation providing a maximum total switch efficiency of ~0.92. All three switch types feature almost the same efficiency at short t{sub R}; at longer t{sub R}, photothyristors have a noticeable advantage.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers

It is shown, both analytically and numerically, that the hole mobility in boron δ-doped (i.e., with a thickness on the order of several lattice constants) diamond layers drops with a decrease in their two-dimensional concentration during depletion of the δ-doped layer by an external voltage. This drop is most pronounced for the maximum initial two-dimensional hole concentrations ~ 3 × 10{sup 13} cm{sup –2} (limited from above by the condition for the possibility of their significant reduction without the electrical breakdown of diamond). This is explained by a decrease in the degree of screening of scattering Coulomb potentials of ionized boron atoms and an increase in the scattering efficiency of degenerate holes from these atoms due to a drop in the kinetic energy of holes. The corresponding calculations of the transport scattering cross section of holes are performed beyond the Born approximation (i.e., perturbation theory), which is inapplicable for boron δ-doped diamond layers. The predicted effect can be used to increase the efficiency of source-to-drain current modulation by a gate voltage in diamond field-effect transistors (FETs) with δ-doped conduction channels.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

High-Voltage AlInGaN LED Chips

A high-voltage light-emitting diode (LED) flip chip based on an AlInGaN heterostructure is developed and fabricated. The LED flip chip consists of 16 elements connected in series, each of which is a convential LED. The chip with a total area of 1.25 × 1.25 mm is intended for a working current of 20 mA and a forward voltage of 48 V. To improve the current-distribution uniformity over the active region of the chip elements and to minimize the losses of the element area occupied by the n-type contact, the n-type contact pads in them are arranged inside the p-type contact region due to the two-level metallization layout with an intermediate insulating layer of dielectric. The arrangement topology of the contact pads is developed using numerical simulation. An increase in the quantum efficiency of the chip is provided by the application of combinations of metals with a high reflectance at the LED emission wavelength, which are used when fabricating n- and p-type contacts as well as current-carrying strips.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Cascade Transformer Based on the Volume Coil for Power Transmission under High Voltage

The use of an electronic cooling system at the High Intensity heavy ion Accelerator Facility (HIAF) accelerator complex, which is being developed at the Institute of Modern Physics (China), to improve the efficiency of ion injection into the accelerator and reduce the spread of ion pulses in the beam has been proposed. Electron cooling of the ion beam was carried out due to the interaction of ions with a continuous electron beam with a current of up to 3 A, energy of up to 450 keV, and energy stability at the level of 10{sup –4} or better. The electron beam energy recuperation was carried out at the expense of a power source with a power of 5–15 kW, which was located at the top of a high-voltage column—a high-voltage terminal. The operation of a prototype of power transmission system, which was based on a cascade transformer with a volumetric coil, has been considered. Such a transformer has a relatively low scattering inductance, which can significantly reduce the number of capacitors to compensate for it. It has been shown that this design made it possible to transfer power of up to 40 kW at small dimensions of the transformer and heat dissipation in it was not more than 10 kW.

43 PARTICLE ACCELERATORS↗
DOE OSTI2018

Features of the Frequency Dependence of Capacitance–Voltage Characteristics of a Semiconductor Structure of a Photoelectric Converter Based on a p–n Junction with an Antireflective Film of Porous Silicon

The frequency dependence of capacitance–voltage characteristics of a semiconductor structure with an antireflective film of porous silicon, which was formed by electrochemical etching above a p–n junction, is studied. Photoluminescence spectra of layers of porous silicon of the experimental samples are also examined. It is demonstrated that the capacitance–voltage curves are shaped by competing influences of capacitances of the p–n junction and the surface structure forming in a porous Si film due to its inhomogeneity. A structural model of layers of the studied semiconductor structure and a capacitance equivalent circuit are proposed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Voltage-Dependent Photoluminescence of Carbon Dots

Carbon dots are fluorescent carbon-based nanoparticles with great potential in bioimaging because they offer multiple imaging windows owing to their excitation dependent emission features. A recent theory study shows that emission of graphene quantum dots responds to external elec. field due to Stark effect. Inspired by this work, we have demonstrated here the first exptl. study of the Stark effect of fluorescent carbon dots synthesized via a soft-template method. The carbon dots exhibit excitation-dependent emission covering blue to orange emission range. After being encapsulated in artificial lipid bilayers, the carbon dots show voltage-sensitivity of fluorescence. The fluorescence intensity change per mV is comparable with that of com. membrane potential sensing dyes. Our results demonstrate the great potential of carbon dots in membrane voltage sensing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Examining Performance Loss Mechanisms in Lithium-Ion Batteries with the High-Voltage Mn-Rich Spinel Positive Electrodes

The high-voltage spinel, with the nominal composition of LiNi 0.5-x Mn 1.5+x O 4 (LNMO), could be a sustainable alternative to the layered-oxide positive electrodes used in lithium-ion batteries. However, commercial acceptance has been limited as LNMO cells display rapid performance loss during cycling. To examine reasons for this loss we prepared cells with LNMO-based positive and either graphite or lithium titanate (LTO) based negative electrodes. Our initial cells displayed high impedance and rapid impedance rise during cycling. Adding single walled carbon nanotubes in the positive lowered initial cell impedance but impedance increased during cycling because of coating delamination from the Al foil. Using a primed Al current collector solved the delamination problem: cells with this current collector showed only a small impedance rise. Regarding capacity, cells with the LTO negative showed higher initial capacities and smaller fade. Our data indicate that cell capacity retention is determined by reduction reactions at the negative electrode that lower capacity and oxidation reactions at the positive electrode that increase capacity: both types of reactions deplete the cell electrolyte during extended cycling. All things considered, species generated at high voltages, either in the electrolyte or at the LNMO electrode, drive cell capacity fade.

25 ENERGY STORAGE↗
DOE OSTI2025

Impact of Module Configuration on Lithium-Ion Battery Performance and Degradation: Part I. Energy Throughput, Voltage Spread, and Current Distribution

Batteries are commonly connected in series and parallel to create modules that fulfill the power and energy requirements of specific applications. However, conclusions about battery performance and degradation under different conditions, as well as predictive models, are often derived from single cell cycling results. In this study, we evaluate the performance of six different series-parallel configurations of commercial lithium nickel manganese cobalt cells over hundreds of cycles. Each cell within the modules was individually instrumented for voltage, current, and temperature monitoring. We quantified the impact of module configuration on overall energy throughput, the voltage spread among series-connected cells, and the current heterogeneity in parallel-connected cells. This module cycling study, one of the broadest reported to date, supports systematic evaluation of the performance trade-offs, pack penalty, and safety implications of different module configurations.

25 ENERGY STORAGE↗
DOE OSTI2019

Communication—Effect of Lower Cutoff Voltage on the 1 st Cycle Performance of Silicon Electrodes

Here, silicon electrodes were cycled once to determine the effect of lower cutoff voltage (LCV) on the irreversible capacity and Li 15 Si 4 phase presence for a protocol that incorporated a potentiostatic hold at the LCV. Cells lithiated below 90 mV showed indications of the crystalline Li 15 Si 4 peak, which was absent for cells with lower cutoff voltages above 90 mV. Irreversible capacity loss was independent of the LCV used. While higher LCVs led to lower capacities, this capacity could be recovered with longer potentiostatic holds. Lastly, these longer holds did not lead to Li 15 Si 4 formation.

36 MATERIALS SCIENCE↗
DOE OSTI2013

A perspective on coatings to stabilize high-voltage cathodes: LiMn1.5Ni0.5O4 with subnanometer Lipon cycled with LiPF6 electrolyte

High voltage Li-ion cathodes push the limits of stability for both cathode and electrolyte. Here subnanometer coatings of an amorphous thin film electrolyte (Lipon) improved the room temperature and 60 C cycling stability of a LiMn1.5Ni0.5O4 spinel cathode when charged to 4.9V with a standard LiPF6 carbonate electrolyte. The cathodes delivered superior C-rate performances up to a 5C discharge, when compared to the uncoated cathodes. Enhanced performance extended for at least 100 cycles. Electrochemical impedance spectroscopy indicates that Lipon slows the increase of interface resistance. Thicker 1-3nm Lipon coatings are sufficiently insulating as to block electronic transport to the cathode particles. Thick coatings also slow Mn dissolution. Results suggest that Lipon may act to scavenge impurities or block active sites that promote electrolyte decomposition. While greatly improved by the Lipon coating, this cathode is not sufficiently stable for long cycle life applications. Further work is needed to assess if and what surface coatings will ultimately stabilize the high voltage cathodes. Comments include insight from other studies of Lipon coated cathodes and directions for future research.

Li-ion battery↗
DOE OSTI2022

Dataset of Simulated Intracardiac Transmembrane Voltage Recordings and ECG Signals

The dataset consists of pairs of computationally simulated intracardiac transmembrane voltage recordings and ECG signals. In total, 16140 organ-level simulations were conducted to create this dataset, using a range of cardiac geometries and physiological parameters. Simulations were performed at LLNL's Lassen supercomputer, concurrently utilizing 4 GPUs and 40 CPU cores. Each simulation produced pairs of 500ms-by-10 ECG signals and 500ms-by-75 transmembrane voltage signals. For convenience, the signals are concatenated and saved as matrices. Each of these matrices is then stored as a numpy array. See the documentation for further details.

Landajuela, Mikel↗
DOE OSTI2022

High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate

Integrated photonics operating at visible-near-infrared (VNIR) wavelengths offer scalable platforms for advancing optical systems for addressing atomic clocks, sensors, and quantum computers. The complexity of free-space control optics causes limited addressability of atoms and ions, and this remains an impediment on scalability and cost. Networks of Mach-Zehnder interferometers can overcome challenges in addressing atoms by providing high-bandwidth electro-optic control of multiple output beams. Here, we demonstrate a VNIR Mach-Zehnder interferometer on lithium niobate on sapphire with a CMOS voltage-level compatible full-swing voltage of 4.2 V and an electro-optic bandwidth of 2.7 GHz occupying only 0.35 mm 2 . Our waveguides exhibit 1.6 dB/cm propagation loss and our microring resonators have intrinsic quality factors of 4.4 × 10 5 . This specialized platform for VNIR integrated photonics can open new avenues for addressing large arrays of qubits with high precision and negligible cross-talk.

77 NANOSCIENCE AND NANOTECHNOLOGY↗