Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms
Not Available
Fuchsberger, Andreas↗
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Si/Ge 1 − x Sn x /Si transistors with highly transparent Al contacts
Not Available
Wind, Lukas (ORCID:0000000214581358)↗
Self-encapsulation of organic thin film transistors by means of ion implantation
Not Available
Cosseddu, P.↗
Effect of titanium oxide–polystyrene nanocomposite dielectrics on morphology and thin film transistor performance for organic and polymeric semiconductors
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solar (photovoltaic), charge transport, materials ↗
Carboxyl-Alkyl Functionalized Conjugated Polyelectrolytes for High Performance Organic Electrochemical Transistors
Not Available
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling
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bio-inspired↗
In situ Observation of Alignment Templating by Seed Crystals in Highly Anisotropic Polymer Transistors
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99 GENERAL AND MISCELLANEOUS↗
Molecular Design Strategies toward Improvement of Charge Injection and Ionic Conduction in Organic Mixed Ionic–Electronic Conductors for Organic Electrochemical Transistors
Not Available
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Systematic Variation of Fluorinated Diketopyrrolopyrrole Low Bandgap Conjugated Polymers: Synthesis by Direct Arylation Polymerization and Characterization and Performance in Organic Photovoltaics and Organic Field-Effect Transistors
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Homyak, Patrick↗
Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors
The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1-nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here we report a facile approach to synthesize a uniform high-k (ε r ~ 22) amorphous native oxide Bi 2 SeO x on the 2D semiconducting Bi2O2Se using O 2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ~0.9 nm, while the original properties of underlying 2D Bi 2 O 2 Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi 2 O 2 Se is achieved to fabricate discrete electronic components. This facile integration of a 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.
36 MATERIALS SCIENCE↗
Heterojunction Transistors Printed via Instantaneous Oxidation of Liquid Metals
Not provided.
Chemistry↗
Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors
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Ren, Yuan↗