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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,531 records · Page 85
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Investigation of interfaces in AlSb/InAs/Ga₀.₇₁In₀.₂₉Sb quantum wells by photoluminescence

We have investigated excitation power and temperature dependent PL spectra to systematically study the influences of the interfaces in the both InAs/Ga₀.₇₁In₀.₂₉Sb and InAs/AlSb on the optical properties of AlSb/Ga₀.₇₁In₀.₂₉Sb/InAs quantum wells (QWs). The localized states as well as the activation energy were analyzed to discuss the possible thermal quenching and non-radiative recombination mechanisms. We found two non-radiative recombination processes were involved in the thermal quenching of radiative emission for the QW structures. The GaAs-like interface in InAs/Ga₀.₇₁In₀.₂₉Sb with higher activation energy (62.7 meV) in high temperature region (70 K–300 K) supplies a deeper hole confinement and less roughness than the InSb-like one, which suppress non-radiative recombination process and promote the optical qualities of the quantum wells. The peak energy of the InSb-like sample exhibited “step-curve” behavior with increase temperature. Neither InSb-like nor AlAs-like interface in InAs/AlSb favored the radiative emission efficiency.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Spin Hall magnetoresistance at Pt/CoFe{sub 2}O{sub 4} interfaces and texture effects

We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe{sub 2}O{sub 4} (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when the Pt/CFO samples are prepared in situ, in a single process. The spin-mixing interface conductance, the key parameter governing SMR and other relevant spin-dependent phenomena, such as spin pumping or spin Seebeck effect, is found to be different depending on the crystallographic orientation of CFO, highlighting the role of the composition and density of magnetic ions at the interface on spin mixing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Largely defocused probe scanning transmission electron microscopy for imaging local modulation of strain field in a hetero interface

We present an innovative method for characterizing the strain field in three dimensions in a hetero interface. Largely defocused probe scanning transmission electron microscopy (LDP-STEM) was employed for imaging the inhomogeneous strain field in a germanium (Ge) layer deposited on a silicon (Si) substrate. In the LDP-STEM image, Ge-atomic columns that are relaxed or strained to the Si substrate in the Si/Ge hetero interface were observed to be distinguishable, allowing for the qualitative characterization of the coherency of the crystal growth. Our results revealed that the strain field is locally modulated along the in-plane direction in the Si/Ge hetero interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D{sub 2}O) on the n-type 4H-SiC carbon face (0001{sup ¯}) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D{sub 2}O exposure is proportional to the total D amount at the interface.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Identification of a kinetic length scale which dictates alloy phase composition in Ni-Al interfaces on annealing at low temperatures

Ni-aluminides are an important class of intermetallics from technological point of view. Ni-Al phase diagram has been studied in detail experimentally as well as theoretically. It is known that if annealed at low temperature, the first alloy phase is usually NiAl{sub 3} according to Bené's rule. It is also understood that heat of formation may get modified by local densities of the constituents forming the alloy. In this regard, it is important to identify a kinetic length scale for defining “local density” in a system. We have deposited ultrathin multilayers of Ni and Al of layer thickness in tens of nanometres with Ni:Al stoichiometric ratio as 3:1 and 1:3, respectively. Considering these stoichiometry, Ni{sub 3}Al and NiAl{sub 3} are the thermodynamically favoured alloy phases in these samples. We used x-ray reflectivity, polarized neutron reflectivity, x-ray diffraction, and secondary ion mass spectroscopy to follow the alloy formation after annealing and identified the alloy phases at interfaces with nanometre resolution. Diffusion length of Ni and Al was obtained using Darken's law. Our results predict that ‘diffusion length’ is the unique length scale that connects kinetics to local density. In another interesting observation, using “virtual Kirkendall markers” at the interfaces, we showed asymmetry in consumption of Al for alloy formation, at Al on Ni (Al/Ni) and Ni on Al (Ni/Al) interfaces by comparing as-deposited and annealed states with respect to the markers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Effective reduction of trap density at the Y{sub 2}O{sub 3}/Ge interface by rigorous high-temperature oxygen annealing

The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y{sub 2}O{sub 3} interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl)yttrium and H{sub 2}O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 × 10{sup 11} eV{sup −1 }cm{sup −2} were achieved by oxygen annealing at high temperatures (550 °C–600 °C). The good interface quality is most likely driven by the growth of interfacial GeO{sub 2} and thermally stabilizing yttrium germanate.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Enhancing mid-infrared spectral response at the LaAlO{sub 3}/SrTiO{sub 3} interface by magnetic field

Many unexpected properties have been found in the LaAlO{sub 3}/SrTiO{sub 3} heterostructure, but the interaction of the many ground states at its interface remains unclear. Here, we demonstrate an optical property of this n-type heterostructure where the mid-infrared spectral responsivity at the interface is enhanced by an external magnetic field. The field intensity ranged from 0.8 to 6 kOe at a low temperature (19 K) as measured with our spectral response measurement system. Two spectral peaks related to the spin-orbit coupling effect were also observed at wavelengths 2400 nm and 3700 nm. The intriguing phenomena relate to changes in the crystallographic structure and subband structure at the interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Structural phases driven by oxygen vacancies at the La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} hetero-interface

An oxygen vacancy driven structural response at the epitaxial interface between La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films and SrTiO{sub 3} substrates is reported. A combined scanning transmission electron microscopy and electron energy loss spectroscopy study reveal the presence of an elongated out-of-plane lattice parameter, coupled to oxygen vacancies and reduced manganese oxidation state at the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} side of the interface. Density functional theory calculations support that the measured interface structure is a disordered oxygen deficient brownmillerite structure. The effect of oxygen vacancy mobility is assessed, revealing an ordering of the vacancies with time.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Atomic study on the ordered structure in Al melts induced by liquid/substrate interface with Ti solute

Atomic ordering in Al melts induced by liquid/substrate interface with Ti solute was investigated by ab initio molecular dynamics simulations and in-situ synchrotron X-ray diffraction. It is predicted that deformed nanoscale ordering Al layers with a rhombohedral-centered hexagonal structure (R3{sup ¯}m space group) instead of the intrinsic fcc structure (Fm3{sup ¯}m space group) form on substrate at temperature above Al liquids. With Al atoms stacking away from the interface, the ordering structure reaches a critical thickness, which inhibits the consecutive stacking of Al atoms on substrates. The locally stacking reconstruction induced by Ti atom relieves the accumulated elastic strain energy in ordered Al layers, facilitating fully heterogeneous nucleation on substrate beyond the deformed ordering Al layer around the melting point. The roles of liquid/substrate interface with Ti solute in the physical behavior of heterogeneous nucleation on substrate were discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electronic structure at transition metal phthalocyanine-transition metal oxide interfaces: Cobalt phthalocyanine on epitaxial MnO films

The electronic structure of the interface between cobalt phthalocyanine (CoPc) and epitaxially grown manganese oxide (MnO) thin films is studied by means of photoemission (PES) and X-ray absorption spectroscopy (XAS). Our results reveal a flat-lying adsorption geometry of the molecules on the oxide surface which allows a maximal interaction between the π-system and the substrate. A charge transfer from MnO, in particular, to the central metal atom of CoPc is observed by both PES and XAS. The change of the shape of N-K XAS spectra at the interface points, however, to the involvement of the Pc macrocycle in the charge transfer process. As a consequence of the charge transfer, energetic shifts of MnO related core levels were observed, which are discussed in terms of a Fermi level shift in the semiconducting MnO films due to interface charge redistribution.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Developing a laser shockwave model for characterizing diffusion bonded interfaces

The US National Nuclear Security Agency has a Global Threat Reduction Initiative (GTRI) with the goal of reducing the worldwide use of high-enriched uranium (HEU). A salient component of that initiative is the conversion of research reactors from HEU to low enriched uranium (LEU) fuels. An innovative fuel is being developed to replace HEU in high-power research reactors. The new LEU fuel is a monolithic fuel made from a U-Mo alloy foil encapsulated in Al-6061 cladding. In order to support the fuel qualification process, the Laser Shockwave Technique (LST) is being developed to characterize the clad-clad and fuel-clad interface strengths in fresh and irradiated fuel plates. LST is a non-contact method that uses lasers for the generation and detection of large amplitude acoustic waves to characterize interfaces in nuclear fuel plates. However, because the deposition of laser energy into the containment layer on a specimen's surface is intractably complex, the shock wave energy is inferred from the surface velocity measured on the backside of the fuel plate and the depth of the impression left on the surface by the high pressure plasma pulse created by the shock laser. To help quantify the stresses generated at the interfaces, a finite element method (FEM) model is being utilized. This paper will report on initial efforts to develop and validate the model by comparing numerical and experimental results for back surface velocities and front surface depressions in a single aluminum plate representative of the fuel cladding.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2015

Structural properties of Ge on SrTiO{sub 3} (001) surface and Ge/SrTiO{sub 3} interface

Germanium−perovskite oxide heterostructures have a strong potential for next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. We investigated the atomic structure and electronic properties of Ge on perfect and defective (001) SrTiO{sub 3} by first-principle calculations. The specific adsorption sites at the initial growth stage and the atomic structure of Ge on the SrTiO{sub 3} (001) substrate have been systematically investigated. The surface grand potential was calculated and compared as a function of the relative chemical potential. The complete surface phase diagram was presented. The energetically favorable interfaces were pointed out among the atomic arrangements of the Ge/SrTiO{sub 3} (001) interfaces. The atomic structure and electronic properties of the intrinsic point defects were calculated and analyzed for the Ge/SrTiO{sub 3} (001) interfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effects of graphene defect on electronic structures of its interface with organic semiconductor

Electronic structures of copper hexadecafluorophthalocyanine (F{sub 16}CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H{sub 2} plasma treatment. By increasing the treatment time of H{sub 2} plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F{sub 16}CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

An experimental investigation on the mechanical properties of the interface between large-sized graphene and a flexible substrate

In this paper, the interfacial mechanical properties of large-sized monolayer graphene attached to a flexible polyethylene terephthalate (PET) substrate are investigated. Using a micro-tensile test and Raman spectroscopy, in situ measurements are taken to obtain the full-field deformation of graphene subjected to a uniaxial tensile loading and unloading cycle. The results of the full-field deformation are subsequently used to identify the status of the interface between the graphene and the substrate as one of perfect adhesion, one showing slide or partial debonding, and one that is fully debonded. The interfacial stress/strain transfer and the evolution of the interface from one status to another during the loading and unloading processes are discussed and the mechanical parameters, such as interfacial strength and interfacial shear strength, are obtained quantitatively demonstrating a relatively weak interface between large-sized graphene and PET.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Research Update: Interface-engineered oxygen octahedral tilts in perovskite oxide heterostructures

Interface engineering of structural distortions is a key for exploring the functional properties of oxide heterostructures and superlattices. In this paper, we report on our comprehensive investigations of oxygen octahedral distortions at the heterointerface between perovskite oxides SrRuO{sub 3} and BaTiO{sub 3} on GdScO{sub 3} substrates and of the influences of the interfacially engineered distortions on the magneto-transport properties of the SrRuO{sub 3} layer. Our state-of-the-art annular bright-field imaging in aberration-corrected scanning transmission electron microscopy revealed that the RuO{sub 6} octahedral distortions in the SrRuO{sub 3} layer have strong dependence on the stacking order of the SrRuO{sub 3} and BaTiO{sub 3} layers on the substrate. This can be attributed to the difference in the interfacial octahedral connections. We also found that the stacking order of the oxide layers has a strong impact on the magneto-transport properties, allowing for control of the magnetic anisotropy of the SrRuO{sub 3} layer through interface engineering. Our results demonstrate the significance of the interface engineering of the octahedral distortions on the structural and physical properties of perovskite oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effect of the interface resistance in non-local Hanle measurements

We use lateral spin valves with varying interface resistance to measure non-local Hanle effect in order to extract the spin-diffusion length of the non-magnetic channel. A general expression that describes spin injection and transport, taking into account the influence of the interface resistance, is used to fit our results. Whereas the fitted spin-diffusion length value is in agreement with the one obtained from standard non-local measurements in the case of a finite interface resistance, in the case of transparent contacts a clear disagreement is observed. The use of a corrected expression, recently proposed to account for the anisotropy of the spin absorption at the ferromagnetic electrodes, still yields a deviation of the fitted spin-diffusion length which increases for shorter channel distances. This deviation shows how sensitive the non-local Hanle fittings are, evidencing the complexity of obtaining spin transport information from such type of measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

A high mobility of 2250 cm{sup 2}/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm{sup 2}/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Structural and subband changes at the LaAlO{sub 3}/SrTiO{sub 3} interface investigated by two-dimensional correlation spectroscopy

The interplay among many ground states in correlated electron materials, especially at the LaAlO{sub 3}/SrTiO{sub 3} interface is central in deeply understanding the physical characteristics and improving further applications of these materials. Here, we use two-dimensional infrared correlation spectroscopy to study the influence of magnetic fields and temperature on the mid-infrared spectral responsivity of the interface. The magnetic field plays the main role at temperatures below the transition temperature, T{sub C}. Two additional spectral peaks were identified at wavelengths of 2800 nm and 3400 nm, when compared with our prior studies. All of these response bands are related to the spin-orbit coupling effect and crystal structure changes. Detailed structural and subband changes in the interface are also investigated.

36 MATERIALS SCIENCE↗