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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Laser-activated microwave semiconductor device switches at microwave speeds, generates pulses, or detects optical pulses with fast response. Device consists essentially of back-to-back metal/thin oxide/silicon (MTOS) capacitors on silicon chip.
The aeropropulsive characteristics of an advanced fighter designed for supersonic cruise were determined in the Langley 16-Foot Transonic Tunnel. The objectives of this investigation were to evaluate the interactive effects of thrust vectoring and wing maneuver devices on lift and drag and to determine trim characteristics. The wing maneuver devices consisted of a drooped leading edge and a trailing-edge flap. Thrust vectoring was accomplished with two dimensional (nonaxisymmetric) convergent-divergent nozzles located below the wing in two single-engine podded nacelles. A canard was utilized for trim. Thrust vector angles of 0 deg, 15 deg, and 30 deg were tested in combination with a drooped wing leading edge and with wing trailing-edge flap deflections up to 30 deg. This investigation was conducted at Mach numbers from 0.60 to 1.20, at angles of attack from 0 deg to 20 deg, and at nozzle pressure ratios from about 1 (jet off) to 10. Reynolds number based on mean aerodynamic chord varied from 9.24 x 10 to the 6th to 10.56 x 10 to the 6th.
The Annular Momentum Control Device (AMCD) concept, applications, and advantages as a momentum storage device are discussed. A laboratory test model AMCD was designed and built. The laboratory model AMCD is described and the results of the laboratory model test phase are presented. The efforts required to complete the AMCD laboratory model test phase are outlined.
A clamp-mount device is disclosed for mounting equipment to an associated I-beam and the like structural member of the type having oppositely extending flanges wherein the device comprises a base and a pair of oppositely facing clamping members carried diagonally on the base clamping flanges therebetween and having flange receiving openings facing one another. Lock means are carried diagonally by the base opposite the clamping members locking the flanges in the clamping members. A resilient hub is carried centrally of the base engaging and biasing a back side of the flanges maintaining tightly clamped and facilitating use on vertical as well as horizontal members. The base turns about the hub to receive the flanges within the clamping members. Equipment may be secured to the base by any suitable means such as bolts in openings. Slidable gate latches secure the hinged locks in an upright locking position. The resilient hub includes a recess opening formed in the base and a rubber-like pad carried in this opening being depressably and rotatably carried therein.
During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.
This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.
This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.
The advent of Very Large Scale Integration (VLSI) technology has rendered the gate level model impractical for many simulation activities critical to the design automation process. As an alternative, an approach to the modeling of VLSI devices at the chip level is described, including the specification of modeling language constructs important to the modeling process. A model structure is presented in which models of the LSI devices are constructed as single entities. The modeling structure is two layered. The functional layer in this structure is used to model the input/output response of the LSI chip. A second layer, the fault mapping layer, is added, if fault simulations are required, in order to map the effects of hardware faults onto the functional layer. Modeling examples for each layer are presented. Fault modeling at the chip level is described. Approaches to realistic functional fault selection and defining fault coverage for functional faults are given. Application of the modeling techniques to single chip and bit slice microprocessors is discussed.
Imaging device uses surface-acoustic-wave (SAW) charge transfer for image readout. Spatial resolution of image changed electronically by changing frequency of applied signal. Surface acoustic waves create traveling longitudinal electric fields. These fields create potential wells that carry along stored charges. Charges injected into wells by photoelectric conversion when light strikes device.
Report prepared describes equipment and summarizes both pretest and onsite procedures for testing of digital electronic devices for susceptibility to single-event upset. Term "single-event upset" denotes variety of temporary or permanent bit flips or latchup induced by single particles of ionizing radiation. Vacuum chamber houses device under test while exposed to ion beam. Vacuum chamber and associated equipment must be brought to ion-beam facility for test.
Peripheral Vision Horizon Device (PVHD) theory states that the likelihood of pilot disorientation in flight is reduced by providing an artificial horizon that provides orientation information to peripheral vision. In considering the validity of the theory, three areas are explored: the use of an artificial horizon device over some other flight instrument; the use of peripheral vision over foveal vision; and the evidence that peripheral vision is well suited to the processing of orientation information.
An experimental investigation in flight was performed to explore the feasibility of using LEBU (Large-Eddy-Breakup) devices to reduce the drag of aircraft. Two geometrical shapes of ribbons were used, and the development of local skin friction was monitored downstream. The aircraft was a swept-wing attack aircraft, and the flights covered the entire subsonic regime from M=0.92 down to stall conditions; flight altitudes were 1, 4.5, 7 and 10 km to explore various combinations of angle of attack, Mach - and Reynolds numbers. Some information was obtained concerning the turbulence characteristics downstream, and a discussion of the downstream amplification due to the drag at the device is also presented.
An indicating device designed to provide an electrical signal relative to the position of a load is described. The device has a central housing with two wing structures on each side which support conventional switch means having cantilevered arms. Extending through the housing is a movable shaft that is spring biased to a forward extended position and adapted to respond against a load being positioned. The rear end of the movable shaft has an adjustable cam means which acts upon the cantilevered ams to cause a switching action upon shifting of the movable shaft by a load.
The service life evaluation of explosive devices used in a wide variety of aircraft escape systems is described. The purpose was to develop a service extension approach, supported by tests on candidate devices, to evaluate the effects of service, age, and degradation, and allow responsible, conservative, service life determinations. An overview is given on the recommended approach and experimental procedures for accurate service evaluations with test results on rigid and flexible explosive transfer lines, one-way transfers, and flexible linear shaped charges.
Three 2 x 64 element charge injection device infrared detector arrays were tested at low and moderate background to evaluate their usefulness for space based astronomical observations. Testing was conducted both in the laboratory and in ground based telescope observations. The devices showed an average readout noise level below 200 equivalent electrons, a peak responsivity of 4 A/W, and a noise equivalent power of 3x10 sq root of W/Hz. Array well capacity was measured to be significantly smaller than predicted. The measured sensitivity, which compares well with that of nonintegrating discrete extrinsic silicon photoconductors, shows these arrays to be useful for certain astronomical observations. However, the measured readout efficiency and frequency response represent serious limitations in low background applications.
The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.
A device for generating motive force through the expansion of a dense, nonelastic fluid is described. It consists of an exterior block of a material with a low expansion coefficient, the interior of which is equipped with two circular cavities, both of which are equipped with rotors having blades constantly stressed outward by springs, so that they make contact with the cavity walls. One cavity is heated externally, and both have an exterior wall made of a friction ring which keeps the volume constant when their length varies. These cavities are interconnected by ducts which, at the inlet, are a prolongation of a peripheral groove made in the friction ring. The excess fluid produced by expansion flows through the groove, subsequently entering the cavity again after passing through a cooler located in the exterior part of the block. Both rotors are connected to gears with appropriate ratios which are equipped with a blocking device to guarantee that they always rotate in the same direction.
The total integrated dose response of three CMOS devices manufactured by Solid State Scientific has been measured using CO-60 gamma rays. Key parameter measurements were made and compared for each device type. The data show that the CD4011, CD4013, and CD4060 produced by this manufacturers should not be used in any environments where radiation levels might exceed 1,000 rad(Si).