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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The RADSAFE simulation framework is described and applied to model Single Event Upsets (SEU) in a 0.25 micron CMOS 4Mbit Static Random Access Memory (SRAM). For this circuit, the RADSAFE approach produces trends similar to those expected from classical models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit.
We explored the utility of ground-based highly accelerated life testing (HALT) on epitaxial lift-off (ELO) triple-junction coverglass interconnected cells (CICs) after exposure to simulated Martian dust storms. Dust storm impingement was replicated by sandblasting CICs with Mars dust simulant replicating conditions similar to the weather conditions reported by the Viking landers. We observed that even in cases when there are no observable open circuit voltage (VOC) losses, the minority carrier lifetime is reduced. Short circuit current (JSC) losses can be recovered upon cleaning, suggesting JSC losses are not linked to permanent damage, like cell cracking. This suggests a permanent degradation could be determined by quantifying the difference between recoverable and non-recoverable power loss. We mined field data from the Mars Exploration Rover, Opportunity and extracted a degradation rate to compare to our experimental data. We found exceptional agreement between 4.9 Martian years of mined field data (9.4%) and the irreversible damage observed in our HALT experiment (9.7%). We demonstrate that the laboratory method for exposing CICs to Martian dust storm conditions well represents the physical reality of long duration CIC operation on Mars.
Lectures given at the Theoretical Advanced Study Institute (TASI 2020), 1-26 June 2020. The topics covered include quantum circuits, entanglement, quantum teleportation, Bell inequalities, quantum entropy and decoherence, classical versus quantum measurement, the area law for entanglement entropy in quantum field theory, and simulating quantum field theory on a quantum computer. Along the way we confront the fundamental sloppiness of how we all learned (and some of us taught) quantum mechanics in college. Links to a Python notebook and Mathematica notebooks will allow the reader to reproduce and extend the calculations, as well as perform five experiments on a quantum simulator.
A large amount of effort has recently been put into understanding the barren plateau phenomenon. In this perspective article, we face the increasingly loud elephant in the room and ask a question that has been hinted at by many but not explicitly addressed: Can the structure that allows one to avoid barren plateaus also be leveraged to efficiently simulate the loss classically? We collect evidence-on a case-by-case basis-that many commonly used models whose loss landscapes avoid barren plateaus can also admit classical simulation, provided that one can collect some classical data from quantum devices during an initial data acquisition phase. This follows from the observation that barren plateaus result from a curse of dimensionality, and that current approaches for solving them end up encoding the problem into some small, classically simulable, subspaces. Thus, while stressing that quantum computers can be essential for collecting data, our analysis sheds doubt on the information processing capabilities of many parametrized quantum circuits with provably barren plateau-free landscapes. We end by discussing the (many) caveats in our arguments including the limitations of average case arguments, the role of smart initializations, models that fall outside our assumptions, the potential for provably superpolynomial advantages and the possibility that, once larger devices become available, parametrized quantum circuits could heuristically outperform our analytic expectations.
This paper proposes a cost-effective, robustly practical solution for a high-efficient electro-hydraulic actuator (EHA) for linear drives. The solution addresses the challenges of high costs and limited efficiency that limit the application of EHA for the electrification of many off-road vehicles. Based on a variable-speed electric motor and a low-cost technology for a fixed-displacement pump, the proposed solution is suitable for a compact implementation and it is capable of energy regeneration under overrunning load conditions. Two different architectures—an open circuit and a closed circuit one—are considered to determine the most practical and efficient configuration as well as the control features. Both architectures minimize throttling losses associated with the conventional regulation of hydraulic actuators. Actuator velocities below the minimum and beyond the maximum allowable pump flow rate are achieved in both architectures using a proportional valve that bypasses the pump flow. The paper describes the design methodology as well as the simulation and experimental activities performed to verify the control strategies as well as energy efficiency. Considering an EHA system of about 20 kW, a complete efficiency map of the system is determined for all the possible four quadrants of operation thus including both resistive and overrunning loads, where energy recuperation is implemented. Simulation and experimental results show that the energy efficiency of the hydraulic systems can reach 84.7% in resistive phases. In assistive phases, the hydraulic system can recover up to 81.8% of the actuator energy. Here, the comparison between open-circuit and closed-circuit structures shows the advantages of the former in terms of energy efficiency. The proposed solution is suitable for electrified hydraulic actuation systems, in both industrial and mobile applications. With the advantages of the low cost of the hydraulic unit and high energy efficiency, it is particularly suitable for mobile applications such as construction machines, that are recently experiencing a significant electrification trend.
Here we propose a tomographic protocol for estimating any k-body reduced density matrix (k-RDM) of an n-mode fermionic state, a ubiquitous step in near-term quantum algorithms for simulating many-body physics, chemistry, and materials. Our approach extends the framework of classical shadows, a randomized approach to learning a collection of quantum-state properties, to the fermionic setting. Our sampling protocol uses randomized measurement settings generated by a discrete group of fermionic Gaussian unitaries, implementable with linear-depth circuits. We prove that estimating all k-RDM elements to additive precision ϵ requires on the order of ($^{n}_{k}$)k 3/2 log(n)/ϵ 2 repeated state preparations, which is optimal up to the logarithmic factor. Furthermore, numerical calculations show that our protocol offers a substantial improvement in constant overheads for k ≥ 2, as compared to prior deterministic strategies. We also adapt our method to particle-number symmetry, wherein the additional circuit depth may be halved at the cost of roughly 2–5 times more repetitions.
Copper (Cu) interconnects are an increasingly important bottleneck in integrated circuits due to energy consumption and latency caused by the notable increase in Cu resistivity as dimensions decrease, primarily due to electron scattering at surfaces. Herein, the potential of a directional conductor, PtCoO 2 , which has a low bulk resistivity and a distinctive anisotropic structure that mitigates electron surface scattering is showcased. Thin films of PtCoO 2 of various thicknesses are synthesized by molecular beam epitaxy (MBE) coupled with a postdeposition annealing process and the superior quality of PtCoO 2 films is demonstrated by multiple characterization techniques. The thickness‐dependent resistivity curve illustrates that PtCoO 2 significantly outperforms effective Cu (Cu with TaN barriers) and Ru in resistivity below 20.0 nm with a more than 6x reduction compared to effective Cu below 6.0 nm, having a value of only 6.32 μΩ cm at 3.3 nm. It is determined that grain boundary scattering can still be improved for even lower resistivities in this material system through a combination of experiments and theoretical simulations. PtCoO 2 is therefore a highly promising alternative material for future interconnect technologies promising lower resistivities, better stability, and significant improvements in energy efficiency and latency for advanced integrated circuits.
This paper presents experimental results of a prototype high temperature co-fired ceramic (HTCC) package with Au/Pt metallization in a three-phase harsh environment test that culminated with 60-day demonstration in simulated Venus surface environment of 465 degrees Centigrade with corrosive atmosphere at 90 bars pressure. The prototype package is based on a previously developed and reported HTCC package successfully tested with multiple analog and digital silicon carbide (SiC) high temperatures semiconductor integrated circuits (ICs) at NASA Glenn Research Center in 500 degrees Centigrade Earth air ambient for over ten thousand hours, and short-term tested at temperatures above 800 degrees Centigrade. The three-phase harsh environment test started with 48 hours in 465 degrees Centigrade Earth air, followed by 48 hours in 465 degrees Centigrade nitrogen at 90-bar pressure and 1400 hours in simulated Venus surface environment of 465 degrees Centigrade with corrosive atmosphere at 90 bars. Initial analytical results of the package materials and surfaces after exposure to the Venus environment are discussed to assess the stability of the packaging materials in the tested environments. The test in a simulated Venus environment was implemented in the NASA Glenn Extreme Environment Rig (GEER). The results of this study suggest that an effective encapsulation of areas of surface metallization and vicinities may help to improve electrical performance of a HTCC alumina packaging system in Venus environment.
We investigate Josephson transport in a fully closed, two-dimensional superfluid circuit formed by a ring-shaped 87 Rb Bose-Einstein condensate that contains two optical barriers acting as movable weak links. Translating these barriers at controlled speeds imposes a steady bias current, enabling direct mapping of the current-chemical-potential (𝐼−Δ𝜇) characteristics. For narrow junctions (𝑤 ≈ 1µm), the circuit exhibits a pronounced dc branch that terminates at a critical current 𝐼 𝑐 = 9(1) × 10 3 s −1 ; above this threshold, the system switches to an ac, resistive regime. Classical-field simulations that include the moving barriers quantitatively reproduce both the nonlinear 𝐼−Δ𝜇 curve and the measured 𝐼 𝑐 , validating the underlying microscopic picture. Analysis of the ensuing phase dynamics shows that dissipation is mediated by the nucleation and traversal of vortex-antivortex pairs through the junctions, while the bulk condensate remains globally phase locked—direct evidence of the ring's topological constraint enforcing quantized circulation. These results establish a cold-atom analog of a superconducting quantum interference device in which Josephson dynamics can be resolved at the single-vortex level, providing a versatile platform for atomtronic circuit elements, nonreciprocal Josephson devices, and on-chip Sagnac interferometers for multiaxis rotation sensing.
With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.
In pixelized detectors, reducing power consumption in the front- end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high-speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel. Another novel low-power circuit called Pseudo-Thyristor presented in another document will replace traditional discriminator and the Regenerative Current Mirror plus Pseudo- Thyristor will provide a full solution for the silicon pixel low-power frontend ASIC.
In the frame of the large R and D work which is performed for the future ASTRID sodium cooled prototype, In Service Inspection and Repair (ISI and R) has been identified as a major issue to be taken into account in order to enlarge the plant safety, to consolidate its availability and to protect the associated investment. After the first part of pre-conceptual design phase (2008-2012), the running second part of pre-conceptual phase (2013-2015) allows to increase the ISI and R tool ability for immersed sodium structures of ASTRID, at about 200 deg. C, on the basis of consolidated specifications and thanks to their qualification through more and more realistic laboratory tests and simulation with CIVA code. ISI and R items are being developed and qualified during a pluri-annual program which mainly deals with the reactor block structures, the primary components and circuit, and the Power Conversion System. It ensures a strong connection between the reactor designers and inspection specialists, as the optimization of inspectability and repairability is looked at: this already induced specific rules for design, in order to shorten and ease the ISI and R operations, which have been merged into RCC-MRx rules. In the frame of increasing technology readiness level with corresponding performance demonstration, this paper presents R and D dealing with the ISI and R items: it highlights the sensor development (both ultrasonic and electromagnetic concepts, compatible with sodium at 200 deg. C), then their applications for ASTRID structure control (under sodium telemetry, imaging and NDE). Activity for repair is also presented (a single laser tool for sodium sweeping, machining and welding), and finally the effort for associated robotic (generic program for ASTRID applications, specific technological tools for sodium medium, tight immersed bell). The main results of testing and simulation are given for telemetry, vision, NDE applications, laser process repair and under sodium sealing. (authors)
The cost of building new semiconductor wafer fabrication factories has grown rapidly, and a state-of-the-art fab may cost 250 million dollars or more. Obtaining an acceptable return on this investment requires high productivity from the fabrication facilities. This paper describes the Photo Dispatcher system which was developed to make machine-loading recommendations on a set of key fab machines. Dispatching policies that generally perform well in job shops (e.g., Shortest Remaining Processing Time) perform poorly for workstations such as photolithography which are visited several times by the same lot of silicon wafers. The Photo Dispatcher evaluates the history of workloads throughout the fab and identifies bottleneck areas. The scheduler then assigns priorities to lots depending on where they are headed after photolithography. These priorities are designed to avoid starving bottleneck workstations and to give preference to lots that are headed to areas where they can be processed with minimal waiting. Other factors considered by the scheduler to establish priorities are the nearness of a lot to the end of its process flow and the time that the lot has already been waiting in queue. Simulations that model the equipment and products in one of Texas Instrument's wafer fabs show the Photo Dispatcher can produce a 10 percent improvement in the time required to fabricate integrated circuits.
This paper describes the use of a frequency domain, finite-difference scheme to simulate the impedance spectra of diffusion in porous microstructures. We investigate both open and closed systems for a range of ideal geometries, as well as some randomly generated synthetic volumes and tomographically derived microstructural data. In many cases, the spectra deviate significantly from the conventional Warburg-type elements typically used to represent diffusion in equivalent circuit analysis. Furthermore, a key finding is that certain microstructures show multiple peaks in the complex plane, which may be misinterpreted as separate electrochemical processes in real impedance data. This is relevant to battery electrode design as the techniques for nano-scale fabrication become more widespread. This simulation tool is provided as an open-source MatLab application and is freely available online as part of the TauFactor platform.
We report ball grid arrays are increasingly being applied in the electronics industry and may require X-ray inspection to ensure the integrity and correct placement of solder pins. However, as the architecture of integrated circuits continues to narrow while simultaneously growing more complex, the risk of electronic failure due to radiation damage increases. While medical X-ray devices have been held to high standards and are repeatedly shown to be well characterized, devices used for electronic inspection are often lacking detailed characterization. This study presents unique methods to solve for important properties in X-ray inspection devices such as source to object distance and energy spectrum. This information can then be applied to Monte Carlo models to achieve better overall dose estimates to electronics, which will lead to superior manufactured products. Since X-ray devices can vary greatly in source characteristics, this work investigates spectral measurement and Monte Carlo representation of three X-ray devices. For a Philips SRO 33 100 medical diagnostic device, the spectral output followed expected trends given by the prediction software SpekCalc and Spektr. For the Dage XD7500NT, direct measurement showed a spectral artifact that through the use of Gafchromic films, was shown to be a contributing effect in the dose output. For the Rad Source RS1800, a high powered irradiation device, direct spectral measurement was not achieved. However, a Monte Carlo model using an assumed spectra was found to match ion chamber measurements to a high degree.
A 256K DRAM has been used to study the lateral transport of charge (electron-hole pairs) induced by direct ionization from heavy-ion tracks in an IC. The qualitative charge transport has been simulated using a two-dimensional numerical code in cylindrical coordinates. The experimental bit-map data clearly show the manifestation of lateral charge transport in the creation of adjacent multiple-bit errors from a single heavy-ion track. The heavy-ion data further demonstrate the occurrence of multiple-bit errors from single ion tracks with sufficient stopping power. The qualitative numerical simulation results suggest that electric-field-funnel-aided (drift) collection accounts for single error generated by an ion passing through a charge-collecting junction, while multiple errors from a single ion track are due to lateral diffusion of ion-generated charge.
Simulation of the magnetic island evolution under Resonant Magnetic Perturbation (RMP) in rotating T-10 tokamak plasma is presented with intent of TEAR code experimental validation. In the T-10 experiment chosen for simulation, the RMP consists of a stationary error field, a magnetic field of the eddy current in the resistive vacuum vessel and magnetic field of the externally applied controlled halo current in the plasma scrape-off layer (SOL). The halo-current loop consists of a rail limiter, plasma SOL, vacuum vessel, and external part of the circuit. Effects of plasma resistivity, viscosity, and RMP are taken into account in the TEAR code based on the two-fluid MHD approximation. Radial distribution of the magnetic flux perturbation is calculated with account of the externally applied RMP. A good agreement is obtained between the simulation results and experimental data for the cases of preprogrammed and feedback-controlled halo current in the plasma SOL.
A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.