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At least 1,531 records · Page 85
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Rotation of Crystal Seed During Early Stages of Growth Reveals the Anisotropy of Glass Matrix

Glass-ceramics are a highly valuable class of materials that are needed for realizing many high-tech as well as consumer products. They are made by controlling crystallization of glass. Theoretical atomistic insights obtained using molecular dynamics simulations in this work reveal that crystal seeds can spontaneously rotate within glass at high temperatures due to anisotropic forces at the glass-crystal interface. This rotation challenges the long‐held view of glass as isotropic solid, and highlights how atomic‐scale inhomogeneities influence crystal growth and microstructure, hence the physical properties glass‐ceramics.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Phase transformations at interfaces: Observations from atomistic modeling

Here, we review the recent progress in theoretical understanding and atomistic computer simulations of phase transformations in materials interfaces, focusing on grain boundaries (GBs) in metallic systems. Recently developed simulation approaches enable the search and structural characterization of GB phases in single-component metals and binary alloys, calculation of thermodynamic properties of individual GB phases, and modeling of the effect of the GB phase transformations on GB kinetics. Atomistic simulations demonstrate that the GB transformations can be induced by varying the temperature, loading the GB with point defects, or varying the amount of solute segregation. The atomic-level understanding obtained from such simulations can provide input for further development of thermodynamics theories and continuous models of interface phase transformations while simultaneously serving as a testing ground for validation of theories and models. They can also help interpret and guide experimental work in this field.

36 MATERIALS SCIENCE↗
DOE OSTI2019

In-situ TEM analysis of the phase transformation mechanism of a Cu–Al–Ni shape memory alloy

We report that minimizing phase transformation (PT) hysteresis is of crucial importance for reliability of shape memory alloy (SMA)-based devices, where the lattice strain/stress caused by thermal hysteresis leads to functional degradation. As a result, understanding structural factors that control PT pathway is critical for development of materials with high reversibility. In this study, two distinct PT mechanisms (from γ$'\atop{1}$ martensite to β 1 austenite phase) in Cu–Al–Ni SMAs were revealed by in-situ TEM observation. A growth-dominant conventional PT mechanism shows in the fast quench sample, whereas a nucleation-dominant PT mechanism that suppresses interface propagation and induces high thermal hysteresis displays in the slow quench sample. By characterizing the atomic scale composition and microstructure we discover that slow quenching induces nanoprecipitation that changes chemistry of the matrix alloy, which in turn causes the higher PT hysteresis and temperature, while fast quenching avoids the formation of these nanoprecipitates. Lastly, our finding provides valuable insights into the fabrication of SMAs with better reliability.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Structure evolution and tin redistribution during oxidation of Zircaloy-4 at 500°C

Zirconium (Zr) alloys are widely used as fuel cladding in nuclear power reactors due to their thermal stability, mechanical durability, corrosion resistance, and low neutron absorption cross-section. However, their performance is challenged by oxidation in reactor environments, making the study of Zr alloy corrosion behavior crucial for ensuring the safety, longevity, and economic viability of nuclear power systems. While the oxidation behavior of Zr-based cladding materials has been extensively studied since the 1950s, a mechanistic understanding into the relationship between structure evolution, solute element redistribution, and properties remains elusive. Valuable insights may be obtained through advanced experimental methods, such as in-situ and high resolution microscopy techniques. Here, in this study, the oxidation behavior of Zircaloy-4 at 500 °C in O 2 is characterized using a multimodal advanced characterization approach. Using in-situ X-ray diffraction, the phase evolution from metastable to stable oxides is tracked in real time. Complementary high-resolution techniques, including electron microscopy and atom probe tomography, reveal nanoscale insights into the microstructural changes and solute redistribution across the oxide/metal interface. Nanohardness mapping across the oxide/metal interface highlights localized mechanical property variations that may be linked to changes in microstructure and crystal structure within the oxide layer. These findings offer valuable insights into the microstructure and property evolution of Zircaloy-4 during oxidation, contributing to a better understanding of microstructural changes in Zr-based alloys under oxidative environments.

APT↗
DOE OSTI2018

The 3.5-Å CryoEM Structure of Nanodisc-Reconstituted Yeast Vacuolar ATPase V o Proton Channel

The molecular mechanism of transmembrane proton translocation in rotary motor ATPases is not fully understood. Here in this paper, we report the 3.5-Å resolution cryoEM structure of the lipid nanodisc-reconstituted V o proton channel of the yeast vacuolar H + -ATPase, captured in a physiologically relevant, autoinhibited state. The resulting atomic model provides structural detail for the amino acids that constitute the proton pathway at the interface of the proteolipid ring and subunit a. Based on the structure and previous mutagenesis studies, we propose the chemical basis of transmembrane proton transport. Moreover, we discovered that the C terminus of the assembly factor Voa1 is an integral component of mature V o . Voa1’s C-terminal transmembrane α helix is bound inside the proteolipid ring, where it contributes to the stability of the complex. Our structure rationalizes possible mechanisms by which mutations in human V o can result in disease phenotypes and may thus provide new avenues for therapeutic interventions.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2017

Understanding the nanoscale redox-behavior of iron-anodes for rechargeable iron-air batteries

Iron-air cells provide a promising and resource-efficient alternative battery concept with superior area specific power density characteristics compared to state-of-the-art Li-air batteries and potentially superior energy density characteristics compared to present Li-ion batteries. Understanding charge-transfer reactions at the anode-electrolyte interface is the key to develop high-performance cells. By employing in-situ electrochemical atomic force microscopy (in-situ EC-AFM), in-depth insight into the electrochemically induced surface reaction processes on iron in concentrated alkaline electrolyte is obtained. The results highlight the formation and growth of the redox-layer on iron over the course of several oxidation/reduction cycles. By this means, a direct correlation between topography changes and the corresponding electrochemical reactions at the nanoscale could unambiguously be established. Here in this paper, the twofold character of the nanoparticulate redox-layer in terms of its passivating character and its contribution to the electrochemical reactions is elucidated. Furthermore, the evolution of single nanoparticles on the iron electrode surface is evaluated in unprecedented and artifact-free detail. Based on the dedicated topography analysis, a detailed structural model for the evolution of the redox-layer which is likewise elementary for corrosion science and battery research is derived.

25 ENERGY STORAGE↗
DOE OSTI2021

Aqueous TiO 2 Nanoparticles React by Proton-Coupled Electron Transfer

Redox reactions of aqueous colloidal TiO 2 4 nm nanoparticles (NPs) have been examined, including both citratecapped and uncapped NPs (c-TiO 2 and uc-TiO 2 ). Photoreduction gave stable blue colloidal c-TiO 2 R NPs with 10–60 electrons per particle. Equilibration of these reduced NPs with soluble redox reagents such as methylviologen (MV 2+ ) provided measurements of the colloid reduction potential as a function of pH. The potentials of c-TiO 2 from pH 2–9 varied linearly with pH, with a slope of –60 ± 5 mV/pH. Estimates of the potential at pH 12 were consistent with extrapolating that line to high pH. The reduction potentials did not correlate with the zeta potentials (ζ) or the surface charge of the NPs across this pH range. Similar reduction potentials were observed for c- and uc-TiO 2 at low pH even though they have quite different ζ potentials. These results show that the common surface-charging explanation of the pH dependence is not tenable in these systems. Oxidation of reduced c-TiO 2 R with the electron-transfer oxidant potassium triiodide (KI 3 ) occurred with a significant drop in pH, showing that protons were released when the electrons were removed from the NPs. Smaller pH drops were observed for the proton-coupled electron transfer (PCET) reagents O 2 (air) and 4-MeO-TEMPO (4-methoxy-2,2,6,6-tetramethylpiperine-1-oxy radical). The difference in the number of protons released with KI 3 vs O 2 and 4-MeO-TEMPO was roughly one proton per electron removed. Thus, the thermodynamically preferred reactivity of these colloidal TiO 2 NPs is PCET over the pH 2–13 range studied. The measured redox potentials refer to the chemical process TiO 2 + H + + e – → TiO 2 ·e – ,H + ; and therefore they do not correspond with an electronic energy such as a conduction band edge or flat band potential. The 1e – /1H + stoichiometry means that the TiO 2 reduction potentials correspond to a TiO 2 –H bond dissociation free energy (BDFE), determined to be 49 ± 2 kcal mol –1 . The PCET description is consistent with the pH dependence of E(TiO 2 /TiO 2 ·e – ,H + ), the release of protons upon oxidation, the lack of correlation with ζ potentials, the similarity of capped and uncapped NPs, and the small change in the potential and BDFE from the first to the last electron/proton pair (H atom) removed. Furthermore, this behavior is suggested to be the norm for redox-active oxide/water interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene

Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigations of interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E 2 1g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2013

X-ray structure of the mammalian GIRK2-βγ G-protein complex

G-protein-gated inward rectifier K + (GIRK) channels allow neurotransmitters, through G-protein-coupled receptor stimulation, to control cellular electrical excitability. In cardiac and neuronal cells this control regulates heart rate and neural circuit activity, respectively. Here we present the 3.5Å resolution crystal structure of the mammalian GIRK2 channel in complex with βγ G-protein subunits, the central signalling complex that links G-protein-coupled receptor stimulation to K + channel activity. Short-range atomic and long-range electrostatic interactions stabilize four βγ G-protein subunits at the interfaces between four K + channel subunits, inducing a pre-open state of the channel. The pre-open state exhibits a conformation that is intermediate between the closed conformation and the open conformation of the constitutively active mutant. The resultant structural picture is compatible with ‘membrane delimited’ activation of GIRK channels by G proteins and the characteristic burst kinetics of channel gating. The structures also permit a conceptual understanding of how the signalling lipid phosphatidylinositol-4,5-bisphosphate (PIP 2 ) and intracellular Na + ions participate in multi-ligand regulation of GIRK channels.

Whorton, Matthew R.↗
DOE OSTI2015

Synthesis, characterization of WS{sub 2} nanostructures by vapor phase deposition

Ultrathin two-dimensional WS{sub 2} nanostructures with various morphologies have been prepared on SiO{sub 2}/Si (300 nm) and sapphire substrates by vapor phase deposition method. Simultaneously, tungsten nanostructures have also been obtained during the growth process. The nanostructures and morphologies of as-prepared products were systematically characterized by employing atomic force microscopy, Raman spectroscopy as well as scanning electron spectroscopy. The electrostatic properties of WS{sub 2} nanostructures were investigated exhibiting uniform surface potential and charge distributions. We have also detected the photoluminescence properties of WS{sub 2} nanostructures, which are dependent on the thickness and nanostructures of synthesized WS{sub 2}. These results suggest that the optoelectronic properties of WS{sub 2} nanostructures can be effectively tuned by quantum confinement effect and nanostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Synthesis, characterization and properties of yellow-light-emitting polyethers containing bis(styryl)anthracene units

Aromatic aliphatic polyethers containing bis(styryl)anthracene units in the main chain separated by flexible spacer of 11 (AND52) or 12 (AND53) methylene units, were synthesized and characterized aiming to be applied as emitting materials in polymer light emitting diode (PLED) devices. The polymers are soluble in common organic solvents and have average molecular weight of about 15kDa. Differentiations owing to an odd-even number of methylene units (χ=11 vs χ=12) are observed in their optical properties in solid state. Thin films as well as PLED devices were fabricated via conventional spin-coating process. Initially, various parameters have been investigated concerning the solubility of the polymers, the effect of film thickness on the electrical properties, and their thermal stability. The optical properties of the two polymers were investigated by NIR-Vis-far UV spectroscopic ellipsometry (SE). The accurate determination of the thickness and the optical constants (refractive index and dielectric function as a function of wavelength) were derived. These provide substantial insights into the final design of the optimum final multi-layer structure of the PLEDs, if we take into account that the external quantum efficiency (EQE) of electroluminescence (EL) strongly depends on the optical interference of the beams of emitted light that have been multiply reflected from the layer interfaces. The morphological characterization of the AND52 and AND53 polymeric thin films was carried out using atomic force microscopy (AFM), while current density-voltage (J-V) characteristics of the devices were studied by electrical measurements. The single PLED devices were switched on at relatively low operation voltages, showing the potential as backplanes for active matrix PLED applications. In this perspective, it can be assumed that further studies of the presented materials will enable the development of flexible PLEDs with the possibility to scale up their dimensions for bigger active area devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Epitaxial wurtzite-MgZnO barrier based magnetic tunnel junctions deposited on a metallic ferromagnetic electrode

An epitaxial wurtzite (WZ) Mg{sub 0.23}Zn{sub 0.77}O barrier based magnetic tunnel junction (MTJ), with electrode-barrier structure of Co{sub 0.30}Pt{sub 0.70} (111)/Mg{sub 0.23}Zn{sub 0.77}O (0001)/Co (0001), was fabricated. The good crystallinity and tunneling properties were experimentally confirmed. Electrical and magnetic investigations demonstrated its high resistance-area product of 1.05 MΩ μm{sup 2}, a maximum tunneling magneto-resistance (TMR) of 35.5%, and the existence of localized states within the tunneling barrier producing TMR rapid decrease and oscillation when increasing the applied bias voltage. The TMR value almost vanished at 200 K, which was attributed to the induced moment and strong spin-orbit coupling in Pt atoms at the Co{sub 0.30}Pt{sub 0.70}/Mg{sub 0.23}Zn{sub 0.77}O interface. Owing to the ferroelectric behavior in WZ-MgZnO materials, the fabrication of WZ-MgZnO barrier based MTJs deposited on a metallic ferromagnetic electrode will open routes for electrically controllable non-volatile devices that are compatible with CMOS technology.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Andreev reflection between aluminum and graphene across van der Waals barriers

We present planar aluminum superconductor–graphene junctions whose hybrid interface is engineered for couplings ranging from tunneling to the strongly coupled regime by employing an atomically thin van der Waals tunneling barrier. Without the vdW barrier, we find Al makes strongly coupled contacts with the fully proximities graphene channel underneath. Using a large band gap hexagonal boron nitride (hBN) barrier, we find the junctions always remain in the weak coupling regime, exhibiting tunneling characteristics. Using monolayer semi-conducting transition metal dichalcogenides (TMDs) such as MoS2, we realize intermediate coupling with enhanced junction conductance due to the Andreev process. In this intermediate regime, we find that junction resistance changes in discrete steps when sweeping a perpendicular magnetic field. The period of the resistance steps in the magnetic field is inversely proportional to the junction area, suggesting the physical origin of our observations is due to magnetic-field-induced vortex formation in the planar junction.

Physics↗
DOE OSTI2020

Nanoscale control of LaAlO 3 /SrTiO 3 metal–insulator transition using ultra-low-voltage electron-beam lithography

In this work, we describe a method to control the insulator–metal transition at the LaAlO 3 /SrTiO 3 interface using ultra-low-voltage electron beam lithography. Compared to previous reports that utilize conductive atomic force microscope (c-AFM) lithography, this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10 000× faster than c-AFM. The writing technique is nondestructive, and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO 3 /SrTiO 3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Flexible atomic layer deposition system for coating porous materials

In this paper, we describe an atomic layer deposition (ALD) system that is optimized for the growth of thin films on high-surface-area, porous materials. The system incorporates a moveable dual-zone furnace allowing for rapid transfer of a powder substrate between heating zones whose temperatures are optimized for precursor adsorption and oxidative removal of the precursor ligands. The reactor can both be evacuated, eliminating the need for a carrier gas during precursor exposure, and rotated, to enhance contact between a powder support and the gas phase, both of which help us to minimize mass transfer limitations in the pores during film growth. The capabilities of the ALD system were demonstrated by growing La 2 O 3 , Fe 2 O 3 , and LaFeO 3 films on a 120 m 2 g -1 MgAl 2 O 4 powder. Analysis of these films using scanning transmission electron microscopy and temperature-programmed desorption of 2-propanol confirmed the conformal nature of the oxide films.

36 MATERIALS SCIENCE↗
NASA NTRS1989

The Raid distributed database system

Raid, a robust and adaptable distributed database system for transaction processing (TP), is described. Raid is a message-passing system, with server processes on each site to manage concurrent processing, consistent replicated copies during site failures, and atomic distributed commitment. A high-level layered communications package provides a clean location-independent interface between servers. The latest design of the package delivers messages via shared memory in a configuration with several servers linked into a single process. Raid provides the infrastructure to investigate various methods for supporting reliable distributed TP. Measurements on TP and server CPU time are presented, along with data from experiments on communications software, consistent replicated copy control during site failures, and concurrent distributed checkpointing. A software tool for evaluating the implementation of TP algorithms in an operating-system kernel is proposed.

Bhargava, Bharat↗
NASA NTRS2012

Multiscale Modeling of Grain Boundaries in ZrB2: Structure, Energetics, and Thermal Resistance

A combination of ab initio, atomistic and finite element methods (FEM) were used to investigate the structures, energetics and lattice thermal conductance of grain boundaries for the ultra high temperature ceramic ZrB2. Atomic models of idealized boundaries were relaxed using density functional theory. Information about bonding across the interfaces was determined from the electron localization function. The Kapitza conductance of larger scale versions of the boundary models were computed using non-equilibrium molecular dynamics. The interfacial thermal parameters together with single crystal thermal conductivities were used as parameters in microstructural computations. FEM meshes were constructed on top of microstructural images. From these computations, the effective thermal conductivity of the polycrystalline structure was determined.

Lawson, John W.↗
NASA NTRS2004

Self-assembled InAsSb quantum dots on (001) InP substrates

Self-assembled InAsSb quantum dots (QD) on (001) InP substrates have been grown using metalorganic vapor phase epitaxy. The dot density and size are found to be strongly dependent on the presence of arsine. Direct deposition of InSb on InP and GaSb substrates formed large islands of InSb with low density of less than 53109/cm², however, InAsSb QDs of density as high as 4 X10¹º/cm² could be self-assembled by alternating group III and group V precursors, and high density almost pure InSb QDs were achieved on In0.53Ga0.47As/InP. The formation of high density InAsSb QDs is a result of a local nonequilibrium process and a reduction in mobility of In adatoms on the growth surface due to the presence of arsenic atoms, and in the case of high density almost pure InSb QDs on InGaAs/InP, the InAs interface layer is believed to be responsible. Photoluminescence shows that InSb QDs emit light at room temperature in the range of 1.7–2.2µm.

Uhl, David↗