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DOE OSTI2015

Mechanism of β-FeSi{sub 2} precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

Fe-implanted Si-wafers have been oxidized at 900 °C and 1100 °C in order to investigate the behaviour of Fe atoms at the growing SiO{sub 2}/Si interface and the impact on the integrity of microelectronic devices of an involuntary Fe contamination before or during the oxidation process. As-implanted and oxidized wafers have been characterized using secondary ion mass spectroscopy, atom probe tomography, and high-resolution transmission electron microscopy. Experimental results were compared to calculated implantation profiles and simulated images. Successive steps of iron disilicide precipitation and oxidation were evidenced during the silicon oxidation process. The formation of characteristic pyramidal-shaped defects, at the SiO{sub 2}/Si interface, was notably found to correlate with the presence of β-FeSi{sub 2} precipitates. Taking into account the competitive oxidation of these precipitates and of the surrounding silicon matrix, dynamic mechanisms are proposed to model the observed microstructural evolution of the SiO{sub 2}/Si interface, during the growth of the silicon oxide layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1993

XPS analysis of the effect of fillers on PTFE transfer film development in sliding contacts

The development of transfer films atop steel counterfaces in contact with unfilled and bronze-filled PTFE has been studied using X-ray photoelectron spectroscopy. The sliding apparatus was contained within the vacuum of the analytical system, so the effects of the native oxide, hydrocarbon, and adsorbed gaseous surface layers of the steel upon the PTFE transfer behavior could be studied in situ. For both the filled and the unfilled PTFE, cleaner surfaces promoted greater amounts of transfer. Metal fluorides, which formed at the transfer film/counterface interface, were found solely in cases where the native oxide had been removed to expose the metallic surface prior to sliding. These fluorides also were found at clean metal/PTFE interfaces formed in the absence of frictional contact. A fraction of these fluorides resulted from irradiation damage inherent in XPS analysis. PTFE transfer films were found to build up with repeated sliding passes, by a process in which strands of transfer filled in the remaining counterface area. Under these reported test conditions, the transfer process is not expected to continue atop previously deposited transfer films. The bronze-filled composite generated greater amounts of transfer than the unfilled PTFE. The results are discussed relative to the observed increase in wear resistance imparted to PTFE by a broad range of inorganic fillers.

Blanchet, T. A.↗

DOE OSTI2023

Revealing atomic-to-nanoscale oxidation mechanisms of metallic materials

Oxidation and corrosion are the leading causes of degradation and failure of metallic materials. Future alloy development requires the incorporation of corrosion resistance into alloy design and processing, and this begins with attaining a fundamental insight into dynamic reaction mechanisms and kinetics between a metal and aggressive environments. With recent advances in environmental transmission electron microscopy, there have been increased efforts to apply this approach to atomically probe the microscopic mechanisms that govern the oxidation and corrosion behavior of metallic materials. Consequently, fundamental insights have been obtained in understanding the underlying processes of oxidation and passivation, including active sites, surface restructuring, oxide/metal interface dynamics, and microstructure and phase evolution. Additionally, we discuss on-going and future developments that are expected to significantly advance the field of high-temperature oxidation and corrosion.

25 ENERGY STORAGE↗

DOE OSTI2017

Charge density at the Al{sub 2}O{sub 3}/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions

In this paper, a quantum correction computation of the inversion layer of charge density was investigated. This study is carried out for a one-dimensional Metal–lnsulator–Semiconductor (MIS) structure with (100) oriented P-type silicon as substrate. The purpose of this paper is to point out the differences between the semiclassical and quantum-mechanical charge description at the interface Al{sub 2}O{sub 3}/Si, and to identify some electronic properties of our MIS device using different thickness of the high-k oxide and diverse temperature with different carrier statitics (Fermi–Dirak statitics and Boltzmann statitics). In particular, the calculations of capacitance voltage (C–V), sheet electron density, a relative position of subband energies and their wave functions are performed to examine qualitatively and quantitatively the electron states and charging mechanisms in our device.

36 MATERIALS SCIENCE↗

DOE OSTI2014

Electrodeposition of hierarchical ZnO/Cu{sub 2}O nanorod films for highly efficient visible-light-driven photocatalytic applications

The development of high-performance visible-light-responsive photocatalytic materials has attracted widespread interest due to their potential applications in the environmental and energy industries. In this work, hierarchical ZnO nanorods films were successfully prepared on the stainless steel mesh substrates via a simple two-step seed-assisted electrodeposition route. Cu{sub 2}O nanoparticles were then electrodeposited on the surface of ZnO nanorods to form the core-shell heterostructure. The synthesized ZnO/Cu{sub 2}O nanocomposites were characterized by X-ray diffraction, field-emission scanning electron microscopy, and UV-visible spectrophotometer. Due to the branched hierarchical morphologies and core-shell structure, ZnO/Cu{sub 2}O nanomaterials show a prominent visible-light-driven photocatalytic performance under the low-intensity light irradiation (40 mW/cm{sup 2}). The influence of some experimental parameters, such as Cu{sub 2}O loading amount, ZnO morphologies, the substrate type, and the PH of the Cu{sub 2}O precursor solution on ZnO/Cu{sub 2}O photocatalytic performance was evaluated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2018

Evolution of the Electrode–Electrolyte Interface of LiNi 0.8 Co 0.15 Al 0.05 O 2 Electrodes Due to Electrochemical and Thermal Stress

For layered oxide cathodes, impedance growth and capacity fade related to reactions at the cathode–electrolyte interface (CEI) are particularly prevalent at high voltage and high temperatures. At a minimum, the CEI layer consists of Li 2 CO 3 , LiF, reduced (relative to the bulk) metal-ion species, and salt decomposition species, but conflicting reports exist regarding their progression during (dis)charging. Utilizing transport measurements in combination with X-ray and nuclear magnetic resonance spectroscopy techniques in our work, we study the evolution of these CEI species as a function of electrochemical and thermal stress for LiNi 0.8 Co 0.15 Al 0.05 O 2 (NCA) particle electrodes using a LiPF 6 ethylene carbonate:dimethyl carbonate (1:1 volume ratio) electrolyte. Although initial surface metal reduction does correlate with surface Li 2 CO 3 and LiF, these species are found to decompose upon charging and are absent above 4.25 V. While there is trace LiPF 6 breakdown at room temperature above 4.25 V, thermal aggravation is found to strongly promote salt breakdown and contributes to surface degradation even at lower voltages (4.1 V). An interesting finding of our work was the partial reformation of LiF upon discharge, which warrants further consideration for understanding CEI stability during cycling.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2013

Effects of interface bonding and defects on boron diffusion at Si/SiO{sub 2} interface

We perform first-principles density functional calculations to find the migration pathway and barrier for B diffusion at the Si/SiO{sub 2} interface. For various interface models, in which crystalline α-quartz or amorphous silica (a-SiO{sub 2}) is placed on Si, we examine stable and metastable configurations of B-related defects which play a role in B diffusion. While a substitutional B alone is immobile in Si, it tends to diffuse to the interface via an interstitialcy mechanism in the presence of a self-interstitial and then changes into an interstitial B in oxide via a kick-out mechanism, leaving the self-interstitial at the interface. At the defect-free interface, where bridging O atoms are inserted to remove interface dangling bonds, an interstitial B prefers to intervene between the interface Si and bridging O atoms and subsequently diffuses through the hollow space or along the network of the Si-O-Si bonds in oxide. The overall migration barriers are calculated to be 2.02–2.12 eV at the Si/α-quartz interface, while they lie in the range of 2.04 ± 0.44 eV at the Si/a-SiO{sub 2} interface, similar to that in α-quartz. The migration pathway and barrier are not significantly affected by interface defects such as suboxide bond and O protrusion, while dangling bonds in the suboxide region can increase the migration barrier by about 1.5 eV. The result that the interface generally does not hinder the B diffusion from Si to SiO{sub 2} assists in understanding the underlying mechanism for B segregation which commonly occurs at the Si/SiO{sub 2} interface.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Influence of Chemistry and Misfit Dislocation Structure on Dopant Segregation at Complex Oxide Heterointerfaces

Complex oxide heterostructures and thin films have emerged as promising candidates for diverse applications. Lattice mismatch between the two oxides lead to the formation of misfit dislocations, which influence vital material features. Trivalent dopant segregation to misfit dislocations at semi-coherent oxide heterointerfaces, while not well understood, is anticipated to impact interface-governed properties. Atomistic simulations elucidating the influence of misfit dislocations on dopant segregation at SrTiO 3 /MgO heterointerfaces are reported. SrO- and TiO 2 -terminated interfaces that have differing misfit dislocation structure were considered for trivalent dopants segregation. At SrO-terminated interface, dopants tend to segregate toward but not precisely to the heterointerface, whereas at TiO 2 -terminated interface, dopants exhibit a thermodynamic preference to accumulate at the heterointerface. Most favorable segregation sites at SrO-terminated interface are located within the coherent terrace, whereas those at TiO 2 -terminated interface are at misfit dislocation intersections. Atomic layer chemistry and the resulting misfit dislocation structure at the heterointerface, along with concomitant strain at the heterointerface due to mismatched dopants, play a critical role in influencing the observed trends for dopant segregation. Overall, the present results offer a fundamental atomic scale perspective of dopant behavior at semi-coherent complex oxide heterointerfaces and the interplay between dopant chemistry, interface chemistry, and misfit dislocation structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Electrochemical reactivity and passivation of organic electrolytes at spinel MgCrMnO 4 cathode interfaces for rechargeable high voltage magnesium-ion batteries

Magnesium transition metal oxides such as MgCr 2−x Mn x O 4 are promising high-voltage and high-capacity cathode materials for rechargeable magnesium batteries (RMBs). Understanding and improving the chemical and electrochemical stability of the cathode–electrolyte interface (CEI) has been the primary technical emphasis to enable this category of cathode materials, which has been significantly underexplored. Herein, in this study, we focus on investigating the fundamental mechanism of parasitic reactions at the charged surface of the high-voltage MgCrMnO 4 model cathode with different organic electrolytes. The aim is to reveal the underlying effect of anions and solvents responsible for the passivation behavior of the cathode by using three exemplary anions: [(CF 3 SO 2 ) 2 N] − (TFSI − ), Al[OC(CF 3 ) 3 ] 4 − (TPFA − ), and [CB 11 H 12 ] − (MC) and three solvents: diglyme (G2), triglyme (G3), and 3-methoxypropylamine (MPA). High precision leakage current measurements during potentiostatic hold reveal that the electrolyte solvent chemistry has a more profound impact than anion's on the passivation of the MgCrMnO 4 cathode surface during deintercalation of Mg 2+ . X-ray photoelectron spectroscopy exhibits the differences in CEI composition. Amine solvents like MPA show poor passivation due to a higher degree of solvent decomposition, while the thin and anion-derived CEI in glyme-based electrolytes is directly linked with the better passivation behavior on the cathode. Furthermore, we leverage the knowledge from these findings to modify the electrolyte structure by adding a solvent additive, with the goal of reducing the parasitic reaction.

25 ENERGY STORAGE↗

DOE OSTI2021

Interface creation on a mixed-terminated perovskite surface

In the field of complex oxide heterostructures, understanding of the initial substrate surface can be critical to fundamental studies regarding the development of emergent properties at the film–substrate interface. For this reason, a considerable amount of effort has gone into the development of techniques to achieve surfaces with single termination for a variety of perovskite single crystals. However, a decisive understanding of how an interface is created when epitaxial growth occurs on a mixed terminated surface remains lacking. Employing in situ synchrotron X-ray scattering during thin film growth by molecular beam epitaxy, we investigate the initial stages of growth on (LaAlO 3 )(Sr 2 AlTaO 6 ) (001) substrates with mixed termination. Using LaNiO 3 as a model system, we find that the surface layers of the substrate restructure during deposition such that while a NiO 2 monolayer is weakly bound, a LaO monolayer bonds strongly, effectively incorporating with (Al, Ta)O 2 from the surface and forming a La(Al, Ta)O 3 ultrathin film.  With regard to the synthesis of high-quality complex oxide heterostructures, it is important that the substrate meet an array of criteria related to the crystal structure, lattice parameter, thermodynamic properties, electrical and optical properties, and so on. In particular, the surface of the substrate should be atomically smooth and exhibit the step-terrace structure ideal for epitaxial thin film growth. Perovskite oxides with the formula ABO 3 have two possible (001) surfaces: AO (A-site termination) and BO 2 (B-site termination). The ability to consistently achieve one of these surface terminations on SrTiO 3 , i.e., TiO 2 , has helped SrTiO 3 become the predominant oxide in the field.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Visualizing oxygen transport pathways during intergranular oxidation in Ni-Cr

The transport paths of O during intergranular oxidation in binary Ni-Cr were investigated. To isolate the selective oxidation of Cr, oxidation was performed with a CO/CO 2 gas mixture in which the oxygen partial pressure was kept under the NiO dissociation pressure. A combination of electron microscopy and atom probe tomography (APT) was used to study the nanometer-scale details of the passivation and penetrative intergranular oxidation processes at high-energy grain boundaries. Oxygen transport towards the terminating oxidation front is elucidated with dedicated usage of oxygen tracer exchange experiments. Secondary ion mass spectroscopy and APT support classical theories of internal oxidation, revealing preferred transport paths at the oxide/alloy interface with sub-nanometer resolution.

36 MATERIALS SCIENCE↗

NASA NTRS1986

Interfaces and failure mechanisms in Al-SiC composites

Aluminum alloys reinforced with silicon carbide whiskers exhibit significantly higher strength and modulus than the unreinforced alloys. However, the composites also exhibit low ductility and poor fracture toughness for reasons which are not well-understood. In this study, high resolution and conventional TEM techniques are used to analyze interface microstructure and failure mechanisms in P/M 2124 and 6061 aluminum alloys reinforced with silicon carbide whiskers. Interfacial oxides are typical of both composite materials, often distributed in clusters or in a discrete layer 2-5 nm thick along the whisker-matrix interface. Highly deformed regions beneath bulk tensile fracture surfaces reveal possible fracture nucleation centers as well as sites of stress concentration where intense plastic strain has occurred. Observations of such highly deformed regions include (1) void initiation at whisker ends, (2) interface decohesion involving the thin oxide layer, (3) transverse cracks in whiskers, and (4) cracks in large constituent particles. TEM results are presented and discussed in relation to mechanisms of composite failure.

Nutt, S. R.↗

DOE OSTI2020

Metal–insulator transition tuned by oxygen vacancy migration across TiO2/VO2 interface

Abstract Oxygen defects are essential building blocks for designing functional oxides with remarkable properties, ranging from electrical and ionic conductivity to magnetism and ferroelectricity. Oxygen defects, despite being spatially localized, can profoundly alter global properties such as the crystal symmetry and electronic structure, thereby enabling emergent phenomena. In this work, we achieved tunable metal–insulator transitions (MIT) in oxide heterostructures by inducing interfacial oxygen vacancy migration. We chose the non-stoichiometric VO 2-δ as a model system due to its near room temperature MIT temperature. We found that depositing a TiO 2 capping layer on an epitaxial VO 2 thin film can effectively reduce the resistance of the insulating phase in VO 2 , yielding a significantly reduced R OFF /R ON ratio. We systematically studied the TiO 2 /VO 2 heterostructures by structural and transport measurements, X-ray photoelectron spectroscopy, and ab initio calculations and found that oxygen vacancy migration from TiO 2 to VO 2 is responsible for the suppression of the MIT. Our findings underscore the importance of the interfacial oxygen vacancy migration and redistribution in controlling the electronic structure and emergent functionality of the heterostructure, thereby providing a new approach to designing oxide heterostructures for novel ionotronics and neuromorphic-computing devices.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

Solution-processed p-type oxide semiconductors have recently attracted increasing interests for the applications in low-cost optoelectronic devices and low-power consumption complementary metal-oxide-semiconductor circuits. In this work, p-type nickel oxide (NiO{sub x}) thin films were prepared using low-temperature solution process and integrated as the channel layer in thin-film transistors (TFTs). The electrical properties of NiO{sub x} TFTs, together with the characteristics of NiO{sub x} thin films, were systematically investigated as a function of annealing temperature. By introducing aqueous high-k aluminum oxide (Al{sub 2}O{sub 3}) gate dielectric, the electrical performance of NiO{sub x} TFT was improved significantly compared with those based on SiO{sub 2} dielectric. Particularly, the hole mobility was found to be 60 times enhancement, quantitatively from 0.07 to 4.4 cm{sup 2}/V s, which is mainly beneficial from the high areal capacitance of the Al{sub 2}O{sub 3} dielectric and high-quality NiO{sub x}/Al{sub 2}O{sub 3} interface. This simple solution-based method for producing p-type oxide TFTs is promising for next-generation oxide-based electronic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2018

Nonzero Berry phase in quantum oscillations from giant Rashba-type spin splitting in LaTiO 3 /SrTiO 3 heterostructures

The manipulation of the spin degrees of freedom in a solid has been of fundamental and technological interest recently for developing high-speed, low-power computational devices. There has been much work focused on developing highly spin-polarized materials and understanding their behavior when incorporated into so-called spintronic devices. These devices usually require spin splitting with magnetic fields. However, there is another promising strategy to achieve spin splitting using spatial symmetry breaking without the use of a magnetic field, known as Rashba-type splitting. Here we report evidence for a giant Rashba-type splitting at the interface of LaTiO 3 and SrTiO 3 . Analysis of the magnetotransport reveals anisotropic magnetoresistance, weak anti-localization and quantum oscillation behavior consistent with a large Rashba-type splitting. It is surprising to find a large Rashba-type splitting in 3 d transition metal oxide-based systems such as the LaTiO 3 /SrTiO 3 interface, but it is promising for the development of a new kind of oxide-based spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Heavy Versus Light Lanthanide Selectivity for Graphene Oxide Films is Concentration Dependent

Rare earths are important materials in various technologies such as catalysis and optoelectronics. Graphene oxide (GO) is a promising material for separation applications, including the isolation of lanthanides from complex mixtures. Previous works using fatty acid monolayers have demonstrated preferential heavy versus light lanthanide adsorption, which has been attributed to differences in lanthanide ion size. In this work, we used interfacial X-ray fluorescence measurements to reveal that GO thin films at the air/water interface have no lanthanide selectivity for dilute subphases. However, at high subphase concentrations, ~8 times more Lu is adsorbed than La. By comparing the GO results with an ideal monolayer with a carboxylic acid headgroup, arachidic acid (AA), we demonstrate that the number of Lu ions adsorbed to GO is significantly higher than the number expected to compensate for the surface charge. Vibrational sum frequency generation (SFG) spectroscopy results on both GO thin films and AA monolayers reveal a red-shifted SFG signal in the OH region, which we attribute to partial dehydration of the adsorbed ions and carboxylic acid headgroups. Liquid surface X-ray reflectivity data show that the GO thin film structure does not significantly change between the very dilute and concentrated subphases. We speculate that the functional groups of both GO and AA facilitate cation dehydration, which is essential for ion adsorption. Heavy lanthanide Lu has stronger ion–ion correlations that can overcome the electrostatic repulsion between cations at higher concentrations compared to light lanthanide La, meaning GO and AA can exhibit apparent overcharge with Lu. Lastly, the layered structure of the GO films and reactive chemical nature of GO itself can accommodate ion adsorption.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Enabling Stable Cycling of 4.2 V High-Voltage All-Solid-State Batteries with PEO-Based Solid Electrolyte

Poly(ethylene oxide) (PEO)-based solid electrolytes are expected to be exploited in solid-state batteries with high safety. Its narrow electrochemical window, however, limits the potential for high voltage and high energy density applications. In this paper, the electrochemical oxidation behavior of PEO and the failure mechanisms of LiCoO 2 -PEO solid-state batteries are studied. It is found that although for pure PEO it starts to oxidize at a voltage of above 3.9 V versus Li/Li + , the decomposition products have appropriate Li + conductivity that unexpectedly form a relatively stable cathode electrolyte interphase (CEI) layer at the PEO and electrode interface. The performance degradation of the LiCoO 2 -PEO battery originates from the strong oxidizing ability of LiCoO 2 after delithiation at high voltages, which accelerates the decomposition of PEO and drives the self-oxygen-release of LiCoO 2 , leading to the unceasing growth of CEI and the destruction of the LiCoO 2 surface. When LiCoO 2 is well coated or a stable cathode LiMn 0.7 Fe 0.3 PO 4 is used, a substantially improved electrochemical performance can be achieved, with 88.6% capacity retention after 50 cycles for Li 1.4 Al 0.4 Ti 1.6 (PO 4 ) 3 coated LiCoO 2 and 90.3% capacity retention after 100 cycles for LiMn 0.7 Fe 0.3 PO 4 . The results suggest that, when paired with stable cathodes, the PEO-based solid polymer electrolytes could be compatible with high voltage operation.

25 ENERGY STORAGE↗

DOE OSTI2020

Designing an impedance-based technique for studying corrosion on cladding materials

In nuclear cladding materials, changes in structure and chemistry over the lifetime of claddings can have a significant impact on fuel and reactor performance. Currently, chemical evolution over the lifetime of the fuel and cladding materials can only be inferred using post-irradiation examination. As an alternative to post-irradiation measurements, electrochemical impedance spectroscopy (EIS) can provide an in-pile measurement of changes in chemistry in oxides and hydrides. The objective of this study is to develop an impedance based sensing technology for measuring spatial- and time-resolved in-pile changes in cladding chemistry in order to understand the mechanisms of hydride formation, hydride dealloying and associated cladding corrosion so that a mitigation strategy and technology can be developed for reactor safe operation. Two prototype impedance-based sensors were designed and assembled using Zr-4 as working electrode and Pt as counter and reference electrode. One sensor is tubular type and the other one is plate-type. These sensors will be tested in static autoclave to investigate the effects of various environmental conditions (including temperature, pressure, and water chemistry) on cladding material corrosion mechanisms. These in-situ EIS sensors would provide corrosion-layer parameters in high-temperature water, such as (1) total layer thickness, (2) the evolution of oxide structures as uniform layer dielectric or sublayer(s), and (3) the possible electrochemistry of the volume corrosion process and the solid/liquid interface, such as the cyclic nature of corrosion of Zr alloys in high-temperature water. This work was focused on electrochemical sensor development, targeting cladding oxides/hydrides under thermodynamic equilibria; characterization of samples using Kelvin probe force microscopy (SKPFM), Raman spectroscopy, and scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS) to provide high-resolution co-localized characterization of zirconium oxide and metal/oxide interface.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗