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At least 1,513 records · Page 84
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

The excitonic insulator route through a dynamical phase transition induced by an optical pulse

We consider a dynamical phase transition induced by a short optical pulse in a system prone to thermodynamical instability. We address the case of pumping to excitons whose density contributes directly to the order parameter. To describe both thermodynamic and dynamic effects on equal footing, we adopt a view of the excitonic insulator for the phase transition and suggest a formation of the Bose condensate for the pumped excitons. The work is motivated by experiments in donor–acceptor organic compounds with a neutral- ionic phase transition coupled to the spontaneous lattice dimerization and to charge transfer excitons. The double nature of the ensemble of excitons leads to an intricate time evolution, in particular, to macroscopic quantum oscillations from the interference between the Bose condensate of excitons and the ground state of the excitonic insulator. The coupling of excitons and the order parameter also leads to self-trapping of their wave function, akin to self-focusing in optics. The locally enhanced density of excitons can surpass a critical value to trigger the phase transformation, even if the mean density is below the required threshold. The system is stratified in domains that evolve through dynamical phase transitions and sequences of merging. The new circumstances in experiments and theory bring to life, once again, some remarkable inventions made by L.V. Keldysh.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Regular and irregular dynamics of spin-polarized wavepackets in a mesoscopic quantum dot at the edge of topological insulator

The dynamics of Dirac–Weyl spin-polarized wavepackets driven by a periodic electric field is considered for the electrons in a mesoscopic quantum dot formed at the edge of the two-dimensional HgTe/CdTe topological insulator with Dirac–Weyl massless energy spectra, where the motion of carriers is less sensitive to disorder and impurity potentials. It is observed that the interplay of strongly coupled spin and charge degrees of freedom creates the regimes of irregular dynamics in both coordinate and spin channels. The border between the regular and irregular regimes determined by the strength and frequency of the driving field is found analytically within the quasiclassical approach by means of the Ince–Strutt diagram for the Mathieu equation, and is supported by full quantum-mechanical simulations of the driven dynamics. The investigation of quasienergy spectrum by Floquet approach reveals the presence of non-Poissonian level statistics, which indicates the possibility of chaotic quantum dynamics and corresponds to the areas of parameters for irregular regimes within the quasiclassical approach. We find that the influence of weak disorder leads to partial suppression of the dynamical chaos. Our findings are of interest both for progress in the fundamental field of quantum chaotic dynamics and for further experimental and technological applications of spindependent phenomena in nanostructures based on topological insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Detection of the metal–insulator transition in disordered systems of magnetic nanoislands

We have studied the conductivity and permittivity of a series of nanoisland-type FeNi films with an effective thickness of up to 3.2 nm on different substrates. It has been observed that the quantity Re ε changes its sign at effective thickness d{sup *} ≈ 1.5–1.8 nm, because of the metal–insulator transition. Analysis of the temperature dependences of the conductivity has confirmed the existence of the metal–insulator transition at the same thickness d{sup *}. It has been concluded that the introduced effective permittivity can serve as a characteristic of island metal systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Dynamics of Electronic States and Magnetoabsorption in 3D Topological Insulators in a Quantizing Magnetic Field

Quantum states have been calculated analytically; the dynamics of a wave packet in a magnetic field has been investigated, and the optical absorption coefficient has been calculated for surface states in 3D topological insulators of the Bi{sub 2}Te{sub 3} family. We have detected a qualitative effect of the hexagonal warping of the spectrum on the structure of wavefunctions at the Landau levels, its manifestation in the features of the wave packet dynamics in a quantizing magnetic field, as well as in the frequency dependence of the optical absorption coefficient, in which new peaks that are absent in the isotropic model of the spectrum appear depending on the polarization of the incident wave. The effects considered here can be manifested in the optical and transport experiments with topological insulators, which makes it possible to determine the parameters of their band structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Magnetic and Electronic Properties of Gd-Doped Topological Insulator Bi{sub 1.09}Gd{sub 0.06}Sb{sub 0.85}Te{sub 3}

The recent realization of quantum anomalous Hall effect and Majorana fermions observation enhance interest in magnetism investigation in topological insulators. In this work, the electronic and magnetic structure of the Gd-doped topological insulator Bi{sub 1.09}Gd{sub 0.06}Sb{sub 0.85}Te{sub 3} were systematically studied by means of angle-resolved photoemission spectroscopy, resonance photoemission spectroscopy (ResPES) and SQUID magnetometry. Resonant features related to the Gd density of states near the Fermi level are experimentally observed. Study of magnetic structure showed antiferromagnetic ordered bulk at low temperatures as well as presence of hysteresis loop at elevated temperatures. Finally, possible mechanism of magnetism and its relation to observed electronic features are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Specific features of the photoconductivity of semi-insulating cadmium telluride

The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Binding energy of excitons formed from spatially separated electrons and holes in insulating quantum dots

It is found that the binding energy of the ground state of an exciton formed from an electron and a hole spatially separated from each other (the hole is moving within a quantum dot, and the electron is localized above the spherical (quantum dot)–(insulating matrix) interface) in a nanosystem containing insulating Al{sub 2}O{sub 3} quantum dots is substantially increased (by nearly two orders of magnitude) compared to the exciton binding energy in an Al{sub 2}O{sub 3} single crystal. It is established that, in the band gap of an Al{sub 2}O{sub 3} nanoparticle, a band of exciton states (formed from spatially separated electrons and holes) appears. It is shown that there exists the possibility of experimentally detecting the ground and excited exciton states in the band gap of Al{sub 2}O{sub 3} nanoparticles at room temperature from the absorption spectrum of the nanosystem.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator–metal phase transition

The method of superconducting quantum interference device (SQUID) magnetometry is used to measure and study low-temperature (T ≤ 100K) susceptibility in a series of samples of heavily doped Ge:As samples on the insulator side of the insulator–metal phase transition. Subtracting the known values of the magnetic susceptibility of the lattice from the measurement results, the values of the impurity magnetic susceptibility of the system are obtained. Using the method of electron spin resonance, the paramagnetic component of the impurity susceptibility is determined. Subtraction of the paramagnetic component from the total impurity susceptibility is used to obtain, for the first time, the values of the impurity diamagnetic susceptibility (∼5 × 10{sup –8} cm{sup 3}/g). The obtained result is consistent with estimates obtained for the localization radius of an electron at an As donor. Lowering the temperature to T ≤ 4 K leads to an increase in the diamagnetic susceptibility, which is consistent with the observed increase in the paramagnetic susceptibility. The observed effect is accounted for by the transition of impurity electrons from the singlet state to the triplet one.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures

The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometry, and electrical measurements. Specific defects (so-called spikes) are revealed between the oxidized macropore walls in macroporous silicon and the oxidation crossing fronts in mesoporous silicon. It is found that, at an initial porosity of mesoporous silicon of 60%, three-stage thermal oxidation leads to the formation of buried silicon-dioxide layers with an electric-field breakdown strength of E{sub br} ~ 10{sup 4}–10{sup 5} V/cm. Multilayered “porous silicon-on-insulator” structures are shown to be promising for integrated chemical micro- and nanosensors.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Simulating Tunneling Electron Transport in the Semiconductor–Crystalline Insulator–Si(111) System

Tunneling carrier transport through a thin insulator (e.g., CaF{sub 2}) layer between a Si(111) substrate and a semiconductor gate is theoretically investigated. Along with the conservation of a large transverse wave vector of tunneling particles, the limitation imposed on the availability of states in the gate is taken into account. Due to this limitation, the tunneling currents at low insulator bias are weaker than in an analogous structure with a metal gate electrode. The same feature leads to a change in the shape of the energy distribution of tunneling electrons, both in transport between the substrate and gate conduction bands and during the Si(111) conduction band–gate valence band transfer.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A Study of the Crystal Structure of Co{sub 40}Fe{sub 40}B{sub 20} Epitaxial Films on a Bi{sub 2}Te{sub 3} Topological Insulator

Laser molecular-beam epitaxy has been used to form Co{sub 40}Fe{sub 40}B{sub 20} layers on Bi{sub 2}Te{sub 3} topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi{sub 2}Te{sub 3}. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Pressure-driven insulator-metal transition in cubic phase UO 2

Understanding the electronic properties of actinide oxides under pressure poses a great challenge for experimental and theoretical studies. Here, we investigate the electronic structure of cubic phase uranium dioxide at different volumes using a combination of density functional theory and dynamical mean-field theory. The ab initio calculations predict an orbital-selective insulator-metal transition at a moderate pressure of ~45 GPa. At this pressure the uranium's 5f 5/2 state becomes metallic, while the 5f 7/2 state remains insulating up to about 60 GPa. In the metallic state, we observe a rapid decrease of the 5f occupation and total angular momentum with pressure. Simultaneously, the so-called "Zhang-Rice state", which is of predominantly 5f 5/2 character, quickly disappears after the transition into the metallic phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Terahertz nano-imaging of metal-insulator transition in Cd 2 Os 2 O 7

The osmate pyrochlore Cd 2 Os 2 O 7 supports an antiferromagnet insulator ground state with an all-in/all-out (AIAO) spin ordering at low temperature. Above 225 K, Cd 2 Os 2 O 7 becomes a paramagnetic metal whereas the mechanism of this metal-to-insulator transition (MIT) remains elusive. In this letter, we use cryogenic near-field technique operating at terahertz frequencies to study the evolution of low-energy response across the MIT. We observed a systematic variation of the magnitude of nano-THz signal across the transition, consistent with the trend in the direct-current conductivity. Conducting domain walls that dominate the nano-scale landscape of the conductivity of a closely related AIAO system Nd 2 Ir 2 O 7 are not apparent in Cd 2 Os 2 O 7

36 MATERIALS SCIENCE↗
DOE OSTI2023

Nano-infrared imaging of metal insulator transition in few-layer 1T-TaS 2

Abstract Among the family of transition metal dichalcogenides, 1T-TaS 2 stands out for several peculiar physical properties including a rich charge density wave phase diagram, quantum spin liquid candidacy and low temperature Mott insulator phase. As 1T-TaS 2 is thinned down to the few-layer limit, interesting physics emerges in this quasi 2D material. Here, using scanning near-field optical microscopy, we perform a spatial- and temperature-dependent study on the phase transitions of a few-layer thick microcrystal of 1T-TaS 2 . We investigate encapsulated air-sensitive 1T-TaS 2 prepared under inert conditions down to cryogenic temperatures. We find an abrupt metal-to-insulator transition in this few-layer limit. Our results provide new insight in contrast to previous transport studies on thin 1T-TaS 2 where the resistivity jump became undetectable, and to spatially resolved studies on non-encapsulated samples which found a gradual, spatially inhomogeneous transition. A statistical analysis suggests bimodal high and low temperature phases, and that the characteristic phase transition hysteresis is preserved down to a few-layer limit.

42 ENGINEERING↗
DOE OSTI2016

Field Testing of an Unvented Roof with Fibrous Insulation, Tiles and Vapor Diffusion Venting

This research is a test implementation of an unvented tile roof assembly in a hot-humid climate (Orlando, FL; Zone 2A), insulated with air permeable insulation (netted and blown fiberglass). Given the localized moisture accumulation and failures seen in previous unvented roof field work, it was theorized that a 'diffusion vent' (water vapor open, but air barrier 'closed') at the highest points in the roof assembly might allow for the wintertime release of moisture, to safe levels. The 'diffusion vent' is an open slot at the ridge and hips, covered with a water-resistant but vapor open (500+ perm) air barrier membrane. As a control comparison, one portion of the roof was constructed as a typical unvented roof (self-adhered membrane at ridge). The data collected to date indicate that the diffusion vent roof shows greater moisture safety than the conventional, unvented roof design. The unvented roof had extended winter periods of 95-100% RH, and wafer (wood surrogate RH sensor) measurements indicating possible condensation; high moisture levels were concentrated at the roof ridge. In contrast, the diffusion vent roofs had drier conditions, with most peak MCs (sheathing) below 20%. In the spring, as outdoor temperatures warmed, all roofs dried well into the safe range (10% MC or less). Some roof-wall interfaces showed moderately high MCs; this might be due to moisture accumulation at the highest point in the lower attic, and/or shading of the roof by the adjacent second story. Monitoring will be continued at least through spring 2016 (another winter and spring).

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗