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At least 1,513 records · Page 84
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

β -Ga 2 O 3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination Available

In this work, we demonstrate a deep mesa etch design for efficient edge field termination in β-Ga 2 O 3 Schottky barrier diodes (SBDs). The proposed design enabled parallel plate fields higher than 4.1 MV/cm with negligible change to the device ON characteristics. The effect of BCl 3 /Cl 2 -based dry etch on (100) and (010) etched vertical sidewalls is also analyzed. A remarkable anisotropy in depletion was observed for etch along (100) and (010) sidewalls. In conclusion, this work provides insight into the impact of etching on n-type Ga 2 O 3 and shows a promising method to realize efficient field termination for high breakdown field strength SBDs.

42 ENGINEERING↗
DOE OSTI2022

Robust low-temperature (350 °C) ferroelectric Hf 0.5 Zr 0.5 O 2 fabricated using anhydrous H 2 O 2 as the ALD oxidant

Here, in this Letter, the robust ferroelectric properties of low-temperature (350 °C) Hf 0.5 Zr 0.5 O 2 (HZO) films are investigated. We demonstrate that the lower crystallization temperature of HZO films originates from a densified film deposition with an anhydrous H 2 O 2 oxidant in the atomic layer deposition process. As a consequence of this densification, H 2 O 2 -based HZO films showed completely crystallinity with fewer defects at a lower annealing temperature of 350 °C. This reduction in the crystallization temperature additionally suppresses the oxidation of TiN electrodes, thereby improving device reliability. The low-temperature crystallization process produces an H 2 O 2 -based HZO capacitor with a high remanent polarization ( P r ), reduced leakage current, high breakdown voltage, and better endurance. Furthermore, while an O 3 -based HZO capacitor requires wake-up cycling to achieve stable P r , the H 2 O 2 -based HZO capacitor demonstrates a significantly reduced wake-up nature. Anhydrous H 2 O 2 oxidant enables the fabrication of a more reliable ferroelectric HZO device using a low process thermal budget (350 °C).

36 MATERIALS SCIENCE↗
DOE OSTI2022

Collective Thomson scattering measurement of plasma evolution during the current pulse in a laser-triggered switch

High-voltage laser-triggered switches (HV-LTSs) are used in pulsed-power applications where low jitter and precise timing are required. The switches allow operation in the megaampere, megavolt regime while maintaining low insertion losses. Currently, there is a lack of detailed plasma measurements in these switches, yet such measurements are needed to elucidate the detailed physics, which include a range of processes such as laser breakdown, streamer formation and growth, current flow, plasma evolution, and cooling. Detailed spatially- and temporally resolved measurements of plasma properties within the switches could contribute to validating and advancing numeric models of these systems. This contribution presents laser Thomson scattering measurements of the electron number density and temperature evolution in a HV-LTS. The switch was operated at 6 kV with current flow for a duration of 145 ns and a peak current density of 0.2 MA/cm2 into a matched load. The Thomson scattering diagnostic system uses a 532 nm probe from an Nd:YAG laser allowing a temporal resolution of ∼10 ns. We find that during the switch current pulse, the plasma electron temperature rose from a starting value of 8.1 ± 1.6 eV (due to cooling of the earlier trigger laser plasma) to a peak value of 26 ± 5 eV with an associated increase in the electron density from 8.6 ± 1.7 × 1017 to 3.1 ± 0.6 × 1018 cm−3.

Gottfried, Jacob A. (ORCID:0000000290058841)↗
DOE OSTI2023

Trap passivation of 4H-SiC/SiO 2 interfaces by nitrogen annealing

We report an N 2 based annealing treatment to passivate interface traps (D it ) in n- and p-type 4H-SiC. The process has the potential to replace the commonly used hazardous and expensive gas nitric oxide (NO). N 2 postoxidation annealing reduces D it in both the upper and lower halves of the 4H-SiC bandgap, with a greater impact at the valence band edge. N 2 annealing at 1500 °C is observed to be more effective in passivating traps and positive fixed charges than NO annealing for p-type devices, whereas for n-type devices, the opposite is true. The breakdown voltages for these devices are found to be lower than that of NO annealed devices. X-ray photoelectron spectroscopy has been performed to estimate the nitrogen areal density at the interface. D it is measured as a function of nitrogen areal densities in the near interfacial regions for the different processes. Additionally, theoretical analysis through density functional theory is consistent with the measured D it profiles by showing the generation of additional states near the valence band edge due to increased nitrogen concentration. In addition to reporting the effect of N 2 annealing on both n- and p-type 4H-SiC, this work correlates the nitrogen areal densities at the interface to the D it and explains the difference in D it characteristics with nitrogen areal density between n- and p-type interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

The electric fields and “lightning jets” of the Sun and solar wind

A model of electric energization of the solar wind and corona is developed, including electro-magnetic particle effects precluded by traditional magneto-hydro (MHD) assumptions. Using standard 1D radial solar models for particle density and temperature, the core gravito-electric field is calculated; and the range of possible photospheric photo-electric fields is estimated. The extant DC field apparently arises from about 460 C of charge displacement, mainly caused by the immense solar energy flux pushing electrons outward. Energetically, this electric field can accelerate surface protons out of the 2 keV gravity well and up to the 4 keV energies observed in the fast solar wind. The electrical energy is released in pervasive, persistent “proton lightning jets,” which are proton beams, charge-neutralized by co-propagating electrons. The jets are formed by pinched “avalanche breakdown” of the weakly ionized photosphere, probably initiated on the down-welling edges of solar surface granulations. These energetic jets will glow as discrete filamentary surface spicules and will be observed in reflected solar light as the diffuse K-corona. Significantly, the total charge displacement and observed fast wind speed are quantitatively predicted by a novel “virial limit”: the (positive) electrical potential energy at r = 0 is limited in magnitude to the 10 keV gravitational well at r = 0.

Physics↗
DOE OSTI2023

DC electric field generation and distribution in magnetized plasmas

Very large DC and AC electric fields cannot be sustained between conducting electrodes because of volume gas breakdown and/or surface field emission. However, very large potential fields are now routinely generated in plasma structures, such as laser generated wake in unmagnetized plasmas. In magnetized plasmas, large DC fields can also be sustained and controlled perpendicular to the magnetic field, but the metallic end plates limiting the plasma, terminating the magnetic field lines, and usually providing the voltage drop feed between the field lines impose severe restrictions on the maximum field. However, it is shown that very large radial DC voltage drops can be sustained by injecting waves of predetermined frequencies and wave vectors, traveling along the azimuthal direction of an axially magnetized plasma cylinder, or by injecting fast neutral particles beams along this azimuthal direction. The large conductivity along the magnetic field lines and the small conductivity between the field lines then distribute this voltage drop. Furthermore, the global power balance and control parameters of wave and beam generated large DC electric fields in magnetized plasmas are identified, described, and analyzed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Defect-mediated diffusion of implanted Mg in GaN: Suppressing dopant redistribution by sequential thermal and microwave annealing

The diffusion behavior of Mg in Mg/N co-implanted GaN is investigated in response to a set of annealing conditions and methodologies, namely, 1000 °C/30 min thermal anneal, by high-temperature pulsed gyrotron microwave annealing at 1420 or 1500 °C, or by thermal and microwave annealing, sequentially. After 1000 °C annealing, the diffusion of Mg in GaN is found to be negligible, as measured by secondary ion mass spectrometry. Annealing by gyrotron microwave annealing alone induces the diffusion of Mg at a rate on the order of 10 −12 cm 2 /s. However, the use of a thermal anneal before microwave gyrotron annealing reduces this rate by an order of magnitude to 10 −13 cm 2 /s. We find that a model that considers Mg diffusion from an inhomogeneous medium that contains a defect-rich implanted region near-surface to a relatively pristine region below the implant range better explains the observed diffusion behavior than a conventional model that assumes a homogeneous medium. By analyzing the diffusion behavior using the Boltzmann–Matano method, we present a discussion of reduction in [V Ga ] by thermal annealing at 1000 °C, leading to a suppressed diffusion coefficient during subsequent high-temperature annealing relative to diffusion after 1420/1500 °C annealing alone. This effect holds potential for improvement in the precision of selectively doped regions for future applications based on the (Al)GaN material system. An improved field profile control in real devices can increase the breakdown and current-handling capabilities in power electronic applications.

Meyers, V.↗
DOE OSTI2023

Metastable argon dynamics in a pulsed microplasma at 43 GHz

Short pulses of millimeter wave (MMW) radiation at 43 GHz create microplasma within a photonic crystal for pressures from 40 to 600 Torr (1.3 × 10 3 –8.0 × 10 4 Pa). Gas breakdown occurs within a photonic crystal, which acts as an electromagnetic resonator to create a strong initial electric field. The time response of the argon metastable density is experimentally determined during the pulse and in the afterglow using laser absorption. The metastable density overshoots the steady-state condition at the beginning of the pulse and during the afterglow. Modeling is presented to understand these observations. The overproduction of argon 1s5 at the beginning of each pulse is due to a concurrent overshoot in the MMW electric field within the photonic crystal. This field overheats the plasma electrons and enhances the production of excited states. The burst of argon metastables observed in the afterglow is due to the pooled energy of the plasma stored in electrons, ions, and excited states of argon. As a result, understanding metastable production is an important intermediate step to ionization and is also critical in the study of diode-pumped rare gas lasers.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Role of initial conditions in plasma-current coupling of gas-puff Z-pinches

Azimuthal magnetic field measurements obtained during the implosion phase of an oxygen gas-puff Z-pinch on a 500 kA peak current and 180 ns rise time linear transformer driver are presented. While a fraction of the driver current was measured within the imploding plasma, key initial conditions were found to significantly impact the delivery of current to the plasma load. The electrode geometry was modified to assist the initial dielectric breakdown and resulted in improved shot reproducibility. Optimization of the gas injection plenum pressure and timing resulted in an increase in the current coupling parameter, defined as the ratio of the measured value of $B$ $θ$ to the expected value, from 50% to 75%. Furthermore, the degree of radial expansion of the gas puff in the load region, which is suspected to lead to the observed current loss during the implosion, was reduced by shortening the valve opening duration. Additionally, a pre-embedded axial magnetic field of up to 0.2 T was found to have no significant impact on the plasma-current coupling of the oxygen implosions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Ferroelectric behavior of sputter deposited Al 0.72 Sc 0.28 N approaching 5 nm thickness

Ferroelectric Al 1-x Sc x N has raised much interest in recent years due to its unique ferroelectric properties and complementary metal oxide semiconductor back-end-of-line compatible processing temperatures. Potential applications in embedded nonvolatile memory, however, require ferroelectric materials to switch at relatively low voltages. One approach to achieving a lower switching voltage is to significantly reduce the Al 1-x Sc x N thickness. In this work, ferroelectric behavior in 5-27 nm films of sputter deposited Al 0.72 Sc 0.28 N has been studied. We find that the 10 kHz normalized coercive field increases from 4.4 to 7.3 MV/cm when reducing the film thickness from 27.1 to 5.4 nm, while over the same thickness range, the characteristic breakdown field of a 12.5 μm radius capacitor increases from 8.3 to 12.1 MV/cm. In conclusion, the 5.4 nm film demonstrates ferroelectric switching at 5.5 V when excited with a 500 ns pulse and a switching speed of 60 ns.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Resonant dynamics of one-side multipactor on dielectric

Breakdown of dielectric radio frequency (RF) windows is an important issue for particle accelerators and high-power RF sources. One of the common reasons for RF window failure is the multipactor on a dielectric surface. The multipactor may be responsible for excessive heating of the dielectric and discharge of charges that accumulated in the ceramic due to secondary emission. In this study, comprehensive self-consistent particle-in-cell simulations with space charge effect were performed. This was to better understand the dynamic of one-side multipactor development and floating potential on the dielectric induced by the emission. The important correlations between the multipactor parameters at saturation, the secondary emission properties of dielectric, and the applied RF field parameters have been found, which led to the conclusion that the dynamics of one-side multipactor on dielectric is a resonant phenomenon.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Wake up and retention in zinc magnesium oxide ferroelectric films

Zn 0.64 Mg 0.36 O (ZMO) is a newly discovered ferroelectric oxide with the wurtzite structure. Epitaxial Zn 0.64 Mg 0.36 O films from 0.036 to 0.5 μm in thickness are grown on Pt/sapphire with the crystallographic c-axis out of plane. At room temperature, the remanent polarization is ~80 μC/cm 2 and the coercive field is ~3 MV/cm. The coercive field is strongly temperature dependent up to 240 °C with a pseudo-activation energy of 23 ± 0.3 meV, suggesting that polarization reversal occurs through an extrinsic process such as domain wall motion. ZMO films can be woken up in 20 electric field cycles on driving near the coercive field; they wake up in a single loop at fields in excess of 4 MV/cm. A thermally activated fluid imprint process, with a pseudo-activation energy of 67 ± 8 meV, enlarges the coercive field by several hundred kV cm –1 after switching the polarization. Additionally, ZMO films exhibit excellent retention characteristics; no reduction in the polarization is observed up to 1000 h from room temperature to 200 °C bakes. Here, this current early generation of ZMO films can survive several thousand switching cycles before dielectric breakdown occurs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes

A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation.

Physics↗
DOE OSTI2024

Reliable operation of Cr 2 O 3 :Mg/ $β$-Ga 2 O 3 p–n heterojunction diodes at 600 °C

Beta gallium oxide (β-Ga 2 O 3 )-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are, thus, promising for applications in power electronic devices and harsh environment sensors. However, the long-term reliability of these ultra-wideband gap (UWBG) semiconductor devices remains barely addressed and may be strongly influenced by chemical reactions at the p–n heterojunction interface. Here, we experimentally demonstrate operation and evaluate the reliability of Cr 2 O 3 :Mg/β-Ga 2 O 3 p–n heterojunction diodes during extended operation at 600 °C, as well as after 30 repeated cycles between 25 and 550 °C. The calculated pO 2 -temperature phase stability diagram of the Ga-Cr-O material system predicts that Ga 2 O 3 and Cr 2 O 3 should remain thermodynamically stable in contact with each other over a wide range of oxygen pressures and operating temperatures. The fabricated Cr 2 O 3 :Mg/β-Ga 2 O 3 p–n heterojunction diodes show room-temperature on/off ratios >104 at ±5 V and a breakdown voltage (V Br ) of -390 V. The leakage current increases with increasing temperature up to 600 °C, which is attributed to Poole–Frenkel emission with a trap barrier height of 0.19 eV. Over the course of a 140-h thermal soak at 600 °C, both the device turn-on voltage and on-state resistance increase from 1.08 V and 5.34 mΩ cm 2 to 1.59 V and 7.1 mΩ cm 2 , respectively. This increase is attributed to the accumulation of Mg and MgO at the Cr 2 O 3 /Ga 2 O 3 interface as observed from the time-of-flight secondary ion mass spectrometry analysis. These findings inform future design strategies of UWBG semiconductor devices for harsh environment operation and underscore the need for further reliability assessments for β-Ga 2 O 3 -based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Control of a twisted domain wall motion supported by topology

We report the topology-mediated modulation of a twisted domain wall speed in a thick perpendicularly magnetized system. By exploiting the topological robustness of the direction of the Bloch wall component in the twisted domain wall, we show that the domain wall speed either increases or decreases depending on whether the transverse magnetic field is parallel or antiparallel to the Bloch wall component. The decrease in the speed is maintained until the antiparallel transverse reaches ~0.3 T, indicating that the twisted domain wall can offer wide controllability supported by the topological robustness which involves an injection of a Bloch point. We also demonstrate that the transverse magnetic field suppresses the Walker breakdown, allowing high mobility domain wall motion for a wide range of perpendicular driving fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Verification of a Monte Carlo binary collision model for simulating elastic and inelastic collisions in particle-in-cell simulations

We present the development and verification of a Monte Carlo binary collision model for simulating elastic and inelastic collisions in particle-in-cell simulations. We apply the corrected binary collision model originally developed for charged-particles collisions to all considered scattering channels, including Coulomb collisions, elastic neutral–neutral and charged–neutral collisions, ionization, excitation, and fusion. The model's implementation is described and verified through a series of simulations, including charged- and neutral-particle thermal equilibration, slowing of electrons in warm solid-density aluminum, collisional damping of a Langmuir wave, helium gas breakdown in an applied electric field, and thermonuclear and beam–target fusion. Then, we demonstrate the model within simulations of hydrogen plasma formation in the Princeton Field-Reversed Configuration as well as of the burning of aneutronic fusion fuel p-11B. The latter includes measurement of the fusion power density in a low-density plasma and fusion production due to the stopping of a proton ignitor beam in a compressed boron target.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Spectroscopic investigation of early light emission from anode-initiated surface flashover in vacuum

Time-resolved optical emission spectroscopy is used to explore the early development of anode-initiated flashover in vacuum. An experimental apparatus for collecting flashover self-luminosity is introduced, which enables spatially resolved light collection from regions adjacent to the anode and cathode triple junctions. The emitted light is spectrally and temporally resolved utilizing an imaging spectrograph and a fast electronic shutter camera. The first light detectable from flashovers across both Rexolite and polytetrafluoroethylene (PTFE) insulators begins less than 10 ns prior to the flashover gap's impedance collapse and consists of faint broadband feature in primarily visible wavelengths. This suggests luminosity due to excitation in the solid, possibly occurring as a result of field emitted electrons. In the few nanoseconds leading up to and including the impedance collapse, the broadband spectrum grows in intensity and extends into the UV, eventually accompanied by a few emission lines of the insulator material. This is strong evidence that the early stages of anode-initiated flashover include surface layer breakdown of the insulator, as a contrast from cathode-initiated flashover, which is predominately an above-surface process. Spectra accumulated over longer exposures of PTFE flashovers indicate that, in the first few hundred nanoseconds after the impedance collapse, ions from the insulator material constitute the majority of the emission lines. Later, neutral and ionic metal species from the electrode contribute with similar prominence as well as molecular bands from diatomic carbon. Finally, a comparison is provided of the results of these studies to other spectroscopic investigations of vacuum flashover from the literature.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

NiGa 2 O 4 interfacial layers in NiO/Ga 2 O 3 heterojunction diodes at high temperature

NiO/Ga 2 O 3 heterojunction diodes have attracted attention for high-power applications, but their high temperature performance and reliability remain underexplored. Here, we report the time evolution of the electrical properties in the widely studied p-NiO/n-Ga 2 O 3 heterojunction diodes and formation of NiGa 2 O 4 interfacial layers at high temperatures. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO–Ga 2 O 3 interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO–Ga 2 O 3 interface forms a ternary compound at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa 2 O 4 layer between NiO and Ga 2 O 3 . First-principles defect calculations find that NiGa 2 O 4 shows low p-type intrinsic doping and hence can serve to limit electric field crowding at the interface. Vertical NiO/ Ga 2 O 3 diodes with intentionally grown 5 nm thin spinel-type NiGa 2 O 4 interfacial layers show an excellent device ON/OFF ratio of >10 10 (± 3 V), V ON of ~1.9 V, and increased breakdown voltage of ~1.2 kV for an initial unoptimized 300 lm diameter device. These p–n heterojunction diodes are promising for high-voltage, high temperature applications.

30 DIRECT ENERGY CONVERSION↗