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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Investigation of the Optical Properties of Silicon Solar Cell Component Materials
Optical constants of silicon solar cell materials determined using Kramers-Kronig analysis of normal reflectance
Results of the 1968 balloon flight solar cell standardization program
Space power output of solar cell arrays prediction using terrestrial measurements and high altitude balloons
The effect of lithium doping on silicon solar cells
Evaluation of lithium-doped silicon solar cells and kinetics of lithium in silicon
Phosphorus diffusion conditions for shallow junction solar cells
Phosphorus diffusion conditions for shallow junction solar cells
Development of lithium diffused radiation resistant solar cells Quarterly report
Boron diffused radiation resistant solar cells
Interconnection of solar cells Patent
Metal strip mounting arrangement for solar cell arrays on spacecraft
Development of lithium diffused radiation resistant solar cells Quarterly report
Lithium diffused radiation resistant solar cells
A comprehensive computer program for predicting solar cell performance
Comprehensive computer program for predicting solar cell performance
Effects of high-temperature, high-humidity environment on silicon solar cell contacts
Electrical and mechanical characteristics of solar cell contacts after exposure to high-temperature high-humidity environments
Research for the improvement of silicon solar cell efficiency
Research and development on silicon solar cell with improved efficiency
Radiation damage in silicon solar cells from low-energy protons
Silicon solar cells radiation damage from low energy protons, discussing current degradation as function of exposed area and particle energy
FEP covers for silicon solar cells
Fluorinated ethylene propylene covers for silicon solar cells, describing processing parameters effects on optical and electrical characteristics
Effect of impurity doping concentration on solar cell output
Experimental measurements were made of solar cell and related photovoltaic parameters for silicon with high concentrations of dopant impurities. The cell output peaked for doping levels around 10 to the 17th power per cu cm. Independent measurements of diffusion length and open circuit voltage at high doping levels showed severe reductions at concentrations above 10 to the 18th power per cu cm. Theoretical reasons are given to explain these reductions. Indication is given of the problems requiring solution before increased cell output can be achieved at high doping levels.
Recent advancements in low cost solar cell processing
A proof-of-concept solar cell process has been developed that is adaptable to automation. This involved the development of a new contact system, a new antireflection coating system, a drift field cell design and a new contoured surface treatment. All these processes are performed without the use of vacuum chambers and expensive masking techniques, thus providing the possibility of reduced costs by automation using conventional semiconductor processing machinery. The contacts were printed on the cells by conventional silk screen machinery. The P(+) back field was formed by diffusing in aluminum from a printed aluminum back contact. The antireflection coating was formed by spinning on and baking a TiO2-SiO2 glass film. Air-mass-zero efficiencies of over 10% were achieved using this completely vacuum-free process.
Simpler process produces more-efficient solar cell
Single step process produces gallium arsenide solar cells having uniform and continuous Ga(1-x)Al(x)As layer thinner than 0.5 micrometers, with an efficiency of 18.5 percent.
Solar Cell High Efficiency and Radiation Damage
Silicon solar cell analysis and fundamental measurements, silicon cell technology, gallium arsenide research and technology, and radiation effects on silicon and gallium arsenide cells, are reported.
EPR and transient capacitance studies on electron-irradiated silicon solar cells
One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.