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At least 1,513 records · Page 84
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Features of photoconversion in highly efficient silicon solar cells

The photoconversion efficiency η in highly efficient silicon-based solar cells (SCs) is analyzed depending on the total surface-recombination rate S{sub s} on illuminated and rear surfaces. Solar cells based on silicon p-n junctions and α-Si:H or α-SiC:H-Si heterojunctions (so-called HIT structures) are considered in a unified approach. It is shown that a common feature of these SCs is an increased open-circuit voltage V{sub oc} associated with an additional contribution of the rear surface. Within an approach based on analysis of the physical features of photoconversion in SCs, taking into account the main recombination mechanisms, including Shockley-Read-Hall recombination, radiative recombination, surface recombination, recombination in the space-charge region, and band-to-band Auger recombination, expressions for the photoconversion efficiency of such SCs are obtained. The developed theory is compared with experiments, including those for SCs with record parameters, e.g., η = 25% and 24.7% for SCs with a p-n junction for HIT structures, respectively, under AM1.5 conditions. By comparing theory and experiment, the values of S{sub s} achieved as a result of recombination-loss minimization by various methods are determined. The results of calculations of the maximum possible value η{sub max} in silicon SCs are compared with the data of other papers. Good agreement is observed.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2019

Effects of surface processes on hydrogen outgassing from metal in desorption experiments

In this study, effects of surface processes on hydrogen outgassing during desorption experiments are investigated using a standard reaction-diffusion model describing hydrogen transport, retention and desorption in material. Three mechanisms for hydrogen migration and desorption on material surface are considered: hydrogen migration from material bulk to material surface (readsorption), hydrogen migration from material surface to material bulk (reabsorption) and hydrogen desorption from material surface by molecular recombination. Three hydrogen outgassing regimes are identified: i) recombination-limited outgassing when hydrogen recombination and desorption is fast compared to hydrogen reabsorption and slow compared to hydrogen transport from material bulk onto material surface ii) reabsorption-limited outgassing when hydrogen recombination and desorption is slow compared to hydrogen reabsorption and when the effective hydrogen recombination and desorption is slow compared to hydrogen transport from material bulk onto material surface iii) bulk-limited outgassing otherwise. Regimes of hydrogen outgassing from tungsten and beryllium are estimated for various experimental conditions. Analytical expressions of the outgassing flux are then derived for each outgassing regime, and used to characterize TDS spectra obtained in TDS experiments. It is shown that TDS spectra in recombination-limited regime are skewed toward high temperature, while TDS spectra in reabsorptionlimited and bulk-limited regimes are skewed toward low temperature. Furthermore, the temperature of the desorption peak in TDS spectra is shown to decrease in recombination-limited regime and to increase in reabsorption-limited and bulk-limited regimes as the total amount of hydrogen stored in material increases. Lastly, it is observed that the effective hydrogen recombination rate measured in reabsorption-limited permeations experiments may be not be reliably used to model and predict hydrogen retention and recycling from tungsten during plasma operations in tokamak.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

SU-E-T-198: Comparison Between a PTW MicroDiamond Dosimeter and a Markus Chamber in a 62 MeV/n Carbon Ion Beam

Purpose: To investigate the linear energy transfer (LET) dependence of a PTW Freiburg microDiamond dosimeter, we compared its response to the response of a plane-parallel Markus chamber in a 62 MeV/n mono-energetic carbon ion beam. Methods: The response of both detectors has been studied as a function of depth in graphite by adding or removing graphite plates in front of the detectors. To account for fluctuations of the beam, we used two setups with different monitor chambers. The depth of the effective point of measurement of both detectors has been converted into a graphite equivalent depth using ICRU Report 73 data. As recommended by IAEA TRS-398, the response of the Markus chamber has been corrected for temperature, pressure, polarity effects and ion recombination. The latter required an additional experiment; to quantify the effect of volume recombination and initial recombination, measurements have been performed at different voltages and different dose rates. Results: As expected, the dominant process leading to ion recombination for carbon ion beam is the initial recombination. At the entrance, the ion recombination correction equals 1.1% and the value is approximately constant in the plateau region. Due to the increase of the LET in the Bragg peak region, we observe a strong increase of the ion recombination correction, up to 6.1% at the distal edge. Comparison between the microDiamond response and the Markus chamber response shows good agreement in the plateau region. However, we observe a 13.6% under response of the microDiamond in the Bragg peak. Conclusion: Increasing between 1% and 6%, the depth dependent ion recombination correction has to be applied to the Markus response. The comparison between the microDiamond and the Markus chamber indicates that there is an under-response of the microDiamond in the vicinity of the Bragg peak due to the increased LET.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1985

High Lifetime Solar Cell Processing and Design

In order to maximize efficiency a solar cell must: (1) absorb as much light as possible in electron-hole production, (2) transport as large a fraction as possible of the electrons to the n-type terminal and holes to the p-type terminal without their first recombining, and (3) produce as high as possible terminal voltage. Step (1) is largely fixed by the spectrum of sunlight and the fundamental absorption characteristics of silicon, although some improvements are possible through texturizing induced light trapping and back surface reflectors. Steps (2) and (3) are, however, dependent on the recombination mechanisms of the cell. The recombination, on the contrary, is strongly influenced by cell processing and design. Some of the lessons during the development of point-contact-cell are discussed. Cell dependence on recombination, surface recombination, and contact recombination are discussed. Results show the overwhelming influence of contact recombination on the operation of the cell when the other sources of recombination are reduced by careful processing.

Swanson, R. M.↗
DOE OSTI2017

Top and bottom surfaces limit carrier lifetime in lead iodide perovskite films

Carrier recombination at defects is detrimental to the performance of solar energy conversion systems, including solar cells and photoelectrochemical devices. Point defects are localized within the bulk crystal while extended defects occur at surfaces and grain boundaries. If not properly managed, surfaces can be a large source of carrier recombination. Separating surface carrier dynamics from bulk and/or grain-boundary recombination in thin films is challenging. Here, we employ transient reflection spectroscopy to measure the surface carrier dynamics in methylammonium lead iodide perovskite polycrystalline films. We find that surface recombination limits the total carrier lifetime in perovskite polycrystalline thin films, meaning that recombination inside grains and/or at grain boundaries is less important than top and bottom surface recombination. As a result, the surface recombination velocity in polycrystalline films is nearly an order of magnitude smaller than that in single crystals, possibly due to unintended surface passivation of the films during synthesis.

14 SOLAR ENERGY↗
DOE OSTI2022

Impact of dopant-induced band tails on optical spectra, charge carrier transport, and dynamics in single-crystal CdTe

Abstract Cadmium telluride (CdTe) semiconductors are used in thin-film photovoltaics, detectors, and other optoelectronic applications. For all technologies, higher efficiency and sensitivity are achieved with reduced charge carrier recombination. In this study, we use state-of-the-art CdTe single crystals and electro-optical measurements to develop a detailed understanding of recombination rate dependence on excitation and temperature in CdTe. We study recombination and carrier dynamics in high-resistivity (undoped) and arsenic (As)-doped CdTe by employing absorption, the Hall effect, time-resolved photoluminescence, and pump-probe in the 80–600 K temperature range. We report extraordinarily long lifetimes (30 µs) at low temperatures in bulk undoped CdTe. Temperature dependencies of carrier density and mobility reveal ionization of the main acceptors and donors as well as dominant scattering by ionized impurities. We also distinguish different recombination defects. In particular, shallow As Te and deep V Cd −As Cd acceptors were responsible for p-type conductivity. AX donors were responsible for electron capture, while nonradiative recombination centers (V Cd −As Te , As 2 precipitates), and native defects (V Cd −Te Cd ) were found to be dominant in p-type and n-type CdTe, respectively. Bimolecular and surface recombination rate temperature dependencies were also revealed, with bimolecular coefficient T −3/2 temperature dependence and 170 meV effective surface barrier, leading to an increase in surface recombination velocity at high temperatures and excitations. The results of this study allowed us to conclude that enhanced crucible rotation growth of As-doped CdTe is advantageous to As activation, leading to longer lifetimes and larger mobilities and open-circuit voltages due to lower absorption and trapping.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu{sub 2}ZnSnSe{sub 4}

Detailed quantum efficiency (QE) analysis of a nanoparticle-based Cu{sub 2}ZnSnSe{sub 4} (CZTSe) solar cell has been conducted to understand photogenerated carrier collection in the device. Specifically, voltage-dependent analysis has been considered to characterize both diffusion limitations and recombination limitations to carrier collection. Application of a generalized QE model and corresponding experimental and analytical procedures are presented to account for non-ideal device behavior, with specific consideration of photogenerated charge trapping, finite absorber thickness, back-surface recombination, and recombination of photogenerated carriers via interface, space-charge-region limited, and/or band tail limited recombination mechanisms. Analysis of diffusion limited collection results in extraction of the minority carrier diffusion length, mobility, back surface recombination velocity, and absorption coefficient. Additionally, forward bias QE measurements afford analysis of the dominant recombination mechanism for photogenerated carriers. For the analyzed CZTSe device, diffusion limitations are not expected to play a significant role in carrier collection in forward bias. However, voltage-dependent carrier collection, previously identified to contribute to open-circuit voltage limitations, is attributed to high recombination rates via band tail states/potential fluctuations in forward bias. A consideration of the assumptions commonly applied to diffusion length, band gap, and band tail extraction is also discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Cross-Cutting Metrology Tools for In Operando Characterization of Carrier Dynamics in Photovoltaic Devices (Final Technical Report)

Understanding the nature of recombination and its dependence on defects and interfaces is essential for engineering materials and contacts for higher V oc and photovoltaic (PV) efficiency. Time-resolved photoluminescence (TRPL) has conventionally been used to evaluate recombination, but not all materials are strongly emissive or otherwise suitable. Time-resolved terahertz spectroscopy is a pump – probe method that presents valuable complementary information, wherein an optical pump pulse photoexcites carriers within the absorber and the transient photoconductivity is probed with a terahertz pulse. Until now, experimental constraints have prohibited the use of terahertz probes to interrogate full device stacks, and measurements were instead made on exfoliated films or films grown on unconventional substrates. However, interfaces are critical to the behavior of photoexcited carriers in solar cells, and the substrates themselves often influence the film growth and bulk properties. Therefore, it is important to probe the behavior of PV absorbers as close as possible to their normal operating conditions. Here we have developed cross-cutting metrology that enable in operando characterization of carrier dynamics and recombination mechanisms in working PV devices. Through a combination of complementary non-contact TRTS and TRPL experiments and modeling, we have obtained key parameters including photoexcited carrier bulk lifetime and interface and back surface recombination velocities with greater precision and accuracy than can be achieved with conventional TRPL alone. By varying pulsed photoexcitation conditions, the contributions of interface and bulk recombination mechanisms can be determined. We have developed and refined this characterization approach by investigating CdTe PVs, which is a well-established technology but with significant margin for further improvements in efficiency. Results were published in Journal of Applied Physics (DOI: 10.1063/5.0064730) and Proceedings of the IEEE PVSC (DOI: 10.1109/PVSC43889.2021.9518559). After validating the approach, we have applied it to correlate recombination rates to processing conditions and material properties, including composition and defects as well as interfaces and surface treatments. Such feedback can inform processing and design choices to enable higher PV efficiency, not only for CdTe, but also CdSe x Te 1-x , CIGS, perovskites, kesterites, and future technologies. A perspective on predicting solar cell performance from terahertz spectroscopy was published in Advanced Energy Materials (DOI: 10.1002/aenm.202102776). The cross-cutting metrology tools developed here will enable determination of the locus and mechanism of performance-limiting recombination in thin film PV devices. This feedback can guide the engineering of PV devices with higher V oc and efficiency, thereby leading to reductions in levelized cost of electricity to meet the SunShot 2030 target of $0.03/kWh for utility-scale PV. Lower costs will enable rapid expansion of renewable electricity generation that is nearly free of carbon emissions. Reducing carbon emissions of the electricity sector is one of the most important solutions to climate change. The project’s specific focus on CdTe PV can benefit First Solar, the US company that is the global leader in CdTe technology, through both technology and workforce development.

14 SOLAR ENERGY↗
DOE OSTI2018

Depleting the carboxy-terminus of human Wnt5a attenuates collagen-induced arthritis in DBA/1 mice

Highlights: • phWnt5a-NL recombinant results in decreased severity of CII-induced arthritis. • phWnt5a-NL recombinant suppresses synovitis and osteoclastogenesis. • phWnt5a-NL recombinant induces the production of Treg cells. • phWnt5a-NL recombinant interrupts the Wnt5a-Ror2 signalling pathway. Wnt5a signalling plays pathological roles in synovial inflammation and bone destruction. In the present study, we designed four human Wnt5a-based DNA recombinants and detected their effects on immunogenicity and anti-rheumatism in a collagen-induced arthritis (CIA) model. Histomorphometry and micro-CT scanning showed that the phWnt5a-NL was superior to other recombinants because it resulted in decreased severity of arthritis, histopathological scores of synovial inflammation and bone erosion in CIA mice. In addition, ELISA and TRAP staining showed that the phWnt5a-NL-immunized CIA mice had reductions in the serum concentrations of the rheumatoid-associated cytokines IL-1β and RANKL and in osteoclastogenesis. Furthermore, flow cytometry showed that the phWnt5a-NL treatment increased the percentage of Treg cells. Finally, western blotting analysis showed that the phWnt5a-NL-immunization interrupted β-catenin and JNK expression in osteoclast precursors derived from the CIA mice. The results suggest that depleting the carboxy-terminus in hWnt5a-based DNA recombinants may be beneficial for the treatment of chronic inflammatory disorders involving bone resorption.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2019

Buried Interface and Luminescent Coupling Analysis with Time-Resolved Two-Photon Excitation Microscopy in II-VI and III-V Semiconductor Heterostructures

Semiconductor heterostructures are used in high-efficiency solar cells and in other electronic devices. Solar cells can't reach thermodynamic efficiency limits in part due to the charge carrier recombination, and efforts are applied to understand and reduce recombination. We describe a novel experimental approach to identify and quantify recombination losses at semiconductor interfaces. Using time-resolved two-photon excitation microscopy, we generate carriers at well-defined absorber depths and find that the red spectral shift of the photoluminescence (PL) emission can be used as a 'spectroscopic ruler' to identify recombination depth up to 30 um. We apply this analysis to quantify Shockley-Read-Hall recombination at the buried CdTe/CdTe interface, where 15 um thick epitaxial CdTe is grown by the molecular beam epitaxy on the single crystal CdTe substrate. We also measure luminescent coupling between the GaInP and GaAs layers in heterostructures grown by the metal-organic chemical vapor deposition. Our results resolve important limitations for accurate 3D charge carrier lifetime tomography. Earlier we analyzed recombination due to extended defects and grain boundaries with the lateral resolution sufficient to resolve such features (approximately 0.5 um), but interpretation of the carrier lifetime microscopy data for buried interfaces and buried semiconductor layers was a challenge. Using methods described here, the axial (z) coordinate for the PL microscopy measurements becomes as well defined as the lateral (x, y) coordinates, enabling accurate 3D identification and analysis of the charge carrier recombination locations in semiconductor heterostructures.

14 SOLAR ENERGY↗
DOE OSTI2017

Cells and methods for producing fatty alcohols

Recombinant cells and methods for improved yield of fatty alcohols. The recombinant cells harbor a recombinant thioesterase gene, a recombinant acyl-CoA synthetase gene, and a recombinant acyl-CoA reductase gene. In addition, a gene product from one or more of an acyl-CoA dehydrogenase gene, an enoyl-CoA hydratase gene, a 3-hydroxyacyl-CoA dehydrogenase gene, and a 3-ketoacyl-CoA thiolase gene in the recombinant cells is functionally deleted. Culturing the recombinant cells produces fatty alcohols at high yields.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2013

Distribution of radiative crystal imperfections through a silicon ingot

Crystal imperfections limit the efficiency of multicrystalline silicon solar cells. Recombination through traps is more prominent in areas with high density of crystal imperfections. A method to visualize the distribution of radiative emission from Shockley Read Hall recombination in silicon is demonstrated. We use hyperspectral photoluminescence, a fast non-destructive method, to image radiatively active recombination processes on a set of 50 wafers through a silicon block. The defect related emission lines D1 and D2 may be detected together or alone. The D3 and D4 seem to be correlated if we assume that an emission at the similar energy as D3 (VID3) is caused by a separate mechanism. The content of interstitial iron (Fe{sub i}) correlates with D4. This method yields a spectral map of the inter band gap transitions, which opens up for a new way to characterize mechanisms related to loss of efficiency for solar cells processed from the block.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Employing time-resolved terahertz spectroscopy to analyze carrier dynamics in thin-film Cu{sub 2}ZnSn(S,Se){sub 4} absorber layers

We report the application of time-resolved terahertz spectroscopy (TRTS) to measure photoexcited carrier lifetimes and mobility, and to determine recombination mechanisms in Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) thin films fabricated from nanocrystal inks. Ultrafast time resolution permits tracking the evolution of carrier density to determine recombination rates and mechanisms. The carrier generation profile was manipulated by varying the photoexcitation wavelength and fluence to distinguish between surface, Shockley-Read-Hall (SRH), radiative, and Auger recombination mechanisms and determine rate constants. Surface and SRH recombination are the dominant mechanisms for the air/CZTSSe/SiO{sub 2}/Si film stack. Diffusion to, and then recombination at, the air-CZTSSe interface occurred on the order of 100 picoseconds, while SRH recombination lifetimes were 1–2 nanoseconds. TRTS measurements can provide information that is complementary to conventional time-resolved photoluminescence measurements and can direct the design of efficient thin film photovoltaics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

The influence of a dilute In{sub x}Ga{sub 1-x}N (x ∼ 0.03) underlayer (UL) grown below a single In{sub 0.16}Ga{sub 0.84}N quantum well (SQW), within a light-emitting diode (LED), on the radiative efficiency and deep level defect properties was studied using differential carrier lifetime (DCL) measurements and deep level optical spectroscopy (DLOS). DCL measurements found that inclusion of the UL significantly improved LED radiative efficiency. At low current densities, the non-radiative recombination rate of the LED with an UL was found to be 3.9 times lower than the LED without an UL, while the radiative recombination rates were nearly identical. This suggests that the improved radiative efficiency resulted from reduced non-radiative defect concentration within the SQW. DLOS measurement found the same type of defects in the InGaN SQWs with and without ULs. However, lighted capacitance-voltage measurements of the LEDs revealed a 3.4 times reduction in a SQW-related near-mid-gap defect state for the LED with an UL. Quantitative agreement in the reduction of both the non-radiative recombination rate (3.9×) and deep level density (3.4×) upon insertion of an UL corroborates deep level defect reduction as the mechanism for improved LED efficiency.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Spin polarization transfer by the radical pair mechanism

In a three-site representation, we study a spin polarization transfer from radical pair spins to a nearby electron or nuclear spin. The quantum dynamics of the radical pair spins is governed by a constant exchange interaction between the radical pair spins which have different Zeeman frequencies. Radical pair spins can recombine to the singlet ground state or to lower energy triplet states. It is then shown that the coherent dynamics of the radical pair induces spin polarization on the nearby third spin in the presence of a magnetic field. The spin polarization transfer depends on the difference between Zeeman frequencies, the singlet and triplet recombination rates, and on the exchange and dipole-dipole interactions between the different spins. In particular, the sign of the polarization depends on the exchange coupling between radical pair spins and also on the difference between singlet and triplet recombination rate constants.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Intrinsic surface passivation of CdTe

Recombination is critically limiting in CdTe devices such as solar cells and detectors, with much of it occurring at or near the surface. In this work, we explore different routes to passivate p-type CdTe surfaces without any intentional extrinsic passivation layers. To provide deeper insight into the passivation routes, we uniquely correlate a set of characterization methods: surface analysis and time-resolved spectroscopy. We study two model systems: nominally undoped single crystals and large-grain polycrystalline films. We examine several strategies to reduce surface recombination velocity. First, we study the effects of removing surface contaminants while maintaining a near-stoichiometric surface. Then we examine stoichiometric thermally reconstructed surfaces. Here, we also investigate the effects of shifting the surface stoichiometry by both “subtractive” (wet chemical etches) and “additive” (ampoule anneals and epitaxial growth) means. We consistently find for a variety of methods that a highly ordered stoichiometric to Cd-rich surface shows a significant reduction in surface recombination, whereas a Te-rich surface has high recombination and propose a mechanism to explain this. While as-received single crystals and as-deposited polycrystalline films have surface recombination velocities in the range of 10 5 –10 6 cm/s, we find that several routes can reduce surface recombination velocities to <2.5 × 10 4 cm/s.

14 SOLAR ENERGY↗
DOE OSTI2016

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Impact of Carrier Concentration and Carrier Lifetime on MgZnO/CdSeTe/CdTe Solar Cells

Here, the performance impact of multiple parameters related to the use of MgZnO (MZO) as the emitter for bilayer CdSeTe/CdTe solar cells has been investigated in detail through numerical simulations. Such a comprehensive study is particularly important, because while cell fabrication using MZO has been highly successful in some cases, it has been less so in others, and it has not been clear which combinations of parameter values are most effective. The parameters considered here include the recombination velocity at the emitter/absorber interface, bulk recombination lifetime, and the carrier concentrations of the emitter and absorber. The ranges chosen for the simulation parameters are those most likely to be found experimentally. The primary finding is that independent of the interfacial recombination velocity and bulk recombination lifetime, the MZO carrier density should be > 1017 cm-3 and in any case greater than that of the absorber to reduce interface recombination. At the same time, a shallow dopant the order of 50 meV or less should reduce SRH recombination in the bulk and enable VOC > 1V.

14 SOLAR ENERGY↗