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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,513 records · Page 84
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Additive Manufacturing of Coreless Flyback Transformers Using Aerosol Jet Printing and Electrochemical Deposition

An additive manufacturing approach combining aerosol jet printing (AJP) and electrodeposition opens a new pathway to the production of lightweight coreless flyback transformer devices for power electronics. AJP of seed layers with resolution on the order of 30 μm is combined with electrodeposition of Cu and Ni for decreased resistance. This combined approach addresses known shortcomings of AJP and electrodeposition. Nanoparticle inks used in AJP of metals have low conductivity versus bulk materials due to their high grain boundary resistance. There is a lack of readily available high-resolution patterning techniques for electrodeposition outside of expensive clean-room-based lithography techniques. Combining these two techniques enables the patterning of high-resolution, high-conductivity components. Here in this manuscript, we report on the construction of coreless flyback transformers consisting of two-layer primary and two-layer secondary spiral inductors separated by layers of a printed UV-curable dielectric. An input voltage of 17 V at 400 kHz was amplified to an output of 1250 V corresponding to a gain of 73.5. COMSOL modeling at the individual inductor level and at the transformer level was used to compare expected inductance, equivalent series resistance (ESR), and coupling with experimentally measured values.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). Here, this work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area nitrogen implantation through an epitaxial p-GaN layer. The fabrication of this termination only includes a single implantation step that does not require precise control of implant depth, rendering a large process latitude. The selective-area implantation produces p-GaN rings that are separated by the implanted, semi-insulating regions. The number and spacing of the p-type rings are found to determine the BV of the vertical GaN p-n diode. The 16-ring structure enables a BV of 1800 V, being 88% of the theoretical 1-D parallel-plane limit. Avalanche characteristics are observed in devices with a large variety of GR designs. Finally, we present a comprehensive survey on the efficiency, fabrication complexity, real estate, and avalanche capability of various edge termination techniques that have been reported in vertical GaN devices. The high efficiency (among the highest reported in avalanche-capable GaN terminations), simple and robust fabrication process, and uniform avalanche capability make this implanted GR a promising edge termination for high-voltage GaN devices.

42 ENGINEERING↗
DOE OSTI2020

Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor

Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for modern power electronics systems due to large economic implications. SiC mosfet modules exhibit narrow SC withstand times and generally much lower SC robustness than silicon (Si) insulated-gate bipolar transistors (IGBTs). This puts a critical concern on their utilization, further stressing the importance of reliable protection. This article presents a comprehensive analysis and discussion on the SiC mosfet module SC protection and performance comparison between conventional desaturation detection, previously used for Si IGBT protection, and Rogowski switch-current sensor (RSCS) detection. In addition, this article presents the experimental design for soft turn-off as a reaction to the SC detection to avoid excessive overshoots during the abrupt turn-off of the SC current. To perform different types of SC with various fault inductances on different temperatures, and for the sake of fair comparison under the same conditions, a gate-driver unit for 1.2 kV SiC mosfet half-bridge modules is developed containing both detection methods. The results demonstrate that both methods are successful in protecting the module in all SC types, with superiority of the RSCS detection and concerns for desaturation detection in high-inductance and high dc-bus voltage SC events.

42 ENGINEERING↗
DOE OSTI2024

Robust Disturbance Rejection Rotor Current Control of Doubly-Fed Induction Generators

This article proposes a robust transient disturbance rejection current controller (TDRCC) to improve the transient performance of doubly-fed induction generators (DFIGs) in wind turbines during grid disturbances, such as short circuits. Here, the proposed robust TDRCC replaces the proportional-integral-derivative (PID) current controllers conventionally used in the vector control scheme of the DFIG rotor side converter (RSC). The TDRCC estimates the transient disturbances caused by grid faults or other external disturbances and provides compensation to the DFIG rotor voltage in the current control loops of the RSC to improve the robustness of the controller to disturbance. A sliding-mode current controller (SMCC) is also designed to highlight the transient performance improvement of the DFIG using the TDRCC over the state-of-the-art control methods during grid short circuit faults. Simulation studies are conducted in PSCAD/EMTDC for a 3.6-MW DFIG wind turbine with the proposed TDRCC, the conventional PI controller, and the SMCC, respectively during the most severe balanced three-phase grid short circuit fault specified by the U.S. grid code as well as an unbalance single-phase grid short circuit fault. Hardware experiments are conducted on a 200-W DFIG wind turbine emulator with the three different controllers for the same three-phase short circuit fault. Simulation and hardware experiment results show that the TDRCC reduces the peak rotor current significantly when compared with the PI and SMCC controlled DFIG system and, therefore, would help prolong the lifespan of the DFIG's power electronics and reduce maintenance costs.

42 ENGINEERING↗
DOE OSTI2024

A Neural Network-Based Power Mismatch Elimination Strategy for Integrated Solar and ESS AC/DC Systems (MARS)

The multiport autonomous reconfigurable solar power plant (MARS) is a promising concept for the integration of photovoltaic (PV) and energy storage system (ESS) to the transmission ac grid and a high-voltage direct current (HVdc) link. The presence of PV and ESS in each arm of the MARS results in uneven distribution of active power among different submodules (SMs), thereby leading to unbalanced SM capacitor voltages and potentially compromising the system stability. Moreover, in the case of partial shadings, shaded PV SMs will suffer from decreased power injections causing power mismatch in the MARS system. To address this issue, a neural-network-based power mismatch elimination (NNPME) strategy is proposed in this article. The proposed NNPME strategy optimizes ESS usage and leverages both dc and ac circulating currents to facilitate power transfer among the SMs, arms, and phases of the MARS system. Simulation and control hardware-in-the-loop (cHIL) experiments demonstrate the effectiveness of the proposed NNPME strategy. Compared with the traditional approaches, the proposed NNPME strategy can significantly enhance system efficiency and ensure stable and continuous operation, even in the presence of uneven power distribution within the MARS system.

14 SOLAR ENERGY↗
DOE OSTI2017

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiC MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2018

A Novel Interfacing Technique for Distributed Hybrid Simulations Combining EMT and Transient Stability Models

With steady increase of power electronic devices and nonlinear dynamic loads in large scale AC/DC systems, the traditional hybrid simulation method, which incorporates these components into a single EMT subsystem and hence causes great difficulty for network partitioning and significant deterioration in simulation efficiency. To resolve these issues, a novel distributed hybrid simulation method is proposed in this paper. The key to realize this method is a distinct interfacing technique, which includes: i) a new approach based on the two-level Schur complement to update the interfaces by taking full consideration of the couplings between different EMT subsystems; and ii) a combined interaction protocol to further improve the efficiency while guaranteeing the simulation accuracy. The advantages of the proposed method in terms of both efficiency and accuracy have been verified by using it for the simulation study of an AC/DC hybrid system including a two-terminal VSC-HVDC and nonlinear dynamic loads.

Distributed hybrid simulation↗
DOE OSTI2020

A study on the impact of mid-gap defects on vertical GaN diodes

GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the substrate and homoepitaxial growth on the device performance is crucial for boosting the performance of GaN. Here, we studied vertical GaN PiN diodes that were fabricated on non-homogenous Hydride Vapor Phase Epitaxy (HVPE) substrates from two different vendors. We show that defects which stemmed from growth techniques manifest themselves as leakage hubs. Different non-homogenous substrates showed different distribution of those defects spatially with the lesser quality substrates clustering those defects in clusters that causes pre-mature breakdown. Energetically these defects are mostly mid-gap around 1.8Ev with light emission spans from 450nm to 700nm. Photon emission spectrometry and hyperspectral electroluminescence were used to locate these defects spatially and energetically.

42 ENGINEERING↗
DOE OSTI2020

Developing of Quaternary Pumped Storage Hydropower for Dynamic Studies

Quaternary pumped storage hydropower (Q-PSH) technology, as one of the new advanced-PSH technology, has been developed by taking advantage of Conventional-PSH (C-PSH) and Adjustable Speed-PSH (AS-PSH). By combining adjustable-speed pump unit and conventional hydropower turbine unit in the quaternary configuration, Q-PSH has the more competitive capability of providing fast power support in the future high renewable penetrated power system. Acting as energy storage (ES), Q-PSH provides promising power supply to deal with the uncertainty and variability from renewable energy generation. This paper focuses on the dynamic modeling of Q-PSH technology employing full-converter machine and the impact of Q-PSH on the frequency response in a system. The detailed model of Q-PSH is developed and implemented in the IEEE 14-bus system based on GE Positive Sequence Load Flow (PSLF) platform, which captures the dynamic of multiple operation modes, especially hydraulic short-circuit (HSC) operation mode. Several cases are set up to reveal the advantages of Q-PSH technology when power electronic based renewable energy generation is deployed in the system. Sensitivity studies of the controller in pump governor show the impact of parameters in pump response performance. The comparison case illustrates the impact of frequency response provided by the Q-PSH in the system.

dynamic modeling↗
DOE OSTI2024

Oxygen vacancy migration and impact on high voltage DC polarization in 0.8BaTiO 3 –0.2BiZn 0.5 Ti 0.5 O 3

Electrical polarization and defect transport are examined in 0.8BaTiO 3 –0.2BiZn 0.5 Ti 0.5 O 3 , an attractive capacitor material for high power electronics. Oxygen vacancies are suggested to be the majority charge carrier at or below 250°C with a grain conduction hopping activation energy of 0.97 eV and 0.92 eV for thermally stimulated depolarization current (TSDC) and impedance spectroscopy measurements, respectively. At higher temperature, thermally generated electronic conduction with an activation energy of 1.6 eV is dominant. Significant oxygen vacancy concentration is indicated (up to ~1%) due to cation vacancy formation (i.e., acceptor defects) from observed Bi (and likely Zn) volatility. Oxygen vacancy diffusivity is estimated to be 10 -12.8 cm 2 /s at 250°C. Low diffusivity and high activation energies are indicative of significant defect interactions. Dipolar oxygen vacancy defects are also indicated, with an activation energy of 0.59 eV from TSDC measurements. In conclusion, the large oxygen vacancy content leads to a short lifetime during high voltage (30 kV/cm), high temperature (250°C) direct current (DC) electrical measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Hybrid-Electric Turbocharger and High-Speed SiC Variable-Frequency Drive Using Sensorless Control Algorithm

Electrically assisted engine boosting systems lend themselves to better throttle response, wider effective operating ranges, and can provide the ability to extract excess energy during deceleration and high-load events (and store it in a vehicle's onboard batteries). This can lead to better overall vehicle performance, emissions, and efficiency while allowing for further engine downsizing and increased power density. In this research effort, a hybrid-electric turbocharger, variable-frequency drive (VFD), and novel sensorless control algorithm were developed. An 11 kW permanent-magnet (PM) machine was coupled to a commercial turbocharger via an in-line, bolt-on housing attached to the compressor inlet. A high-efficiency, high-temperature VFD, consisting of custom control and power electronics, was also developed. The VFD uses SiC MOSFETS to achieve high-switching frequency and can be cooled using an existing engine coolant loop operating at up to 105 °C at an efficiency greater than 98%. A digital sliding mode-observer sensorless speed control algorithm was created to command and regulate speed and achieved ramp rates of over 68,000 rpm/s. A two-machine benchtop motor/generator test stand was constructed for initial testing and tuning of the VFD and sensorless control algorithm. A gas blow-down test stand was constructed to test the mechanical operation of the hybrid-electric turbocharger and speed control using the VFD. In addition, a liquid-pump cart was assembled for high-temperature testing of the VFD. Initial on-engine testing is planned for later this year. This paper intends to present a design overview of the in-line, hybrid-electric device, VFD, and performance characterization of the electronics and sensorless control algorithm.

Engineering↗
DOE OSTI2021

Physics-Informed Neural Networks for Heat Transfer Problems

Abstract Physics-informed neural networks (PINNs) have gained popularity across different engineering fields due to their effectiveness in solving realistic problems with noisy data and often partially missing physics. In PINNs, automatic differentiation is leveraged to evaluate differential operators without discretization errors, and a multitask learning problem is defined in order to simultaneously fit observed data while respecting the underlying governing laws of physics. Here, we present applications of PINNs to various prototype heat transfer problems, targeting in particular realistic conditions not readily tackled with traditional computational methods. To this end, we first consider forced and mixed convection with unknown thermal boundary conditions on the heated surfaces and aim to obtain the temperature and velocity fields everywhere in the domain, including the boundaries, given some sparse temperature measurements. We also consider the prototype Stefan problem for two-phase flow, aiming to infer the moving interface, the velocity and temperature fields everywhere as well as the different conductivities of a solid and a liquid phase, given a few temperature measurements inside the domain. Finally, we present some realistic industrial applications related to power electronics to highlight the practicality of PINNs as well as the effective use of neural networks in solving general heat transfer problems of industrial complexity. Taken together, the results presented herein demonstrate that PINNs not only can solve ill-posed problems, which are beyond the reach of traditional computational methods, but they can also bridge the gap between computational and experimental heat transfer.

Engineering↗
DOE OSTI2021

Performance and reliability of β-Ga 2 O 3 Schottky barrier diodes at high temperature

Beta-gallium oxide (ß-Ga 2 O 3 ) is an ultrawide bandgap semiconductor that has potential for power electronic applications and devices operating at high temperatures. Particularly important for these applications are its 4.9 eV bandgap, facile electron doping, and the ability to grow ß-Ga 2 O 3 crystals from the melt. In this work, vertical ß-Ga 2 O 3 Schottky barrier diodes were fabricated using Pt Schottky and Ti-based Ohmic contacts and Au contact pads on unintentionally doped n-type, (2¯01)-oriented single crystal substrates. The diode’s temperature-dependent electrical properties up to 400°C were investigated, and the Pt/Ga 2 O 3 Schottky barrier height was determined to be close to 1.2 eV. The degradation of the contacts over multiple cycles up to 400°C was observed, resulting in a significant increase in series resistance of the diodes by 1000× at ambient temperature after they were cycled. According to electron microscopy measurements, this degradation is likely due in part to the migration and oxidation of Ti at the top surface of the Au contact pads. This degradation highlights the need for further research and development to ensure stable Ohmic and Schottky contacts to Ga 2 O 3 at temperatures above 400°C.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium

Atomic layer etching driven by self-limiting thermal reactions has recently been developed as a highly conformal and isotropic technique for low damage atomic scale material removal by sequential exposures of vapor phase reactants. Gallium oxide (Ga2O3) is currently among the materials of interest due to a large variety of applications including power electronics, solar cells, gas sensors, and photon detectors. In this study, Ga2O3 was deposited by plasma enhanced atomic layer deposition using trimethylgallium [TMG, Ga(CH3)3] and O2 plasma at a substrate temperature of 200 °C. We report a newly developed method for Ga2O3 thermal atomic layer etching, in which surface modification is achieved through HF exposure resulting in a gallium fluoride surface layer, and then removed through volatile product formation via ligand exchange with TMG. Saturation of the precursor exposure at a substrate temperature of 300 °C resulted in an etch rate of 1.0 ± 0.1 Å/cycle for amorphous Ga2O3. Uniformity and conformality of the atomic layer etching process were confirmed via atomic force microscopy with a measured surface roughness of 0.55 ± 0.05 nm that remains unchanged after etching. The use of TMG for etching may expand available precursors for atomic layer etching processes, while allowing for both etching and deposition of Ga2O3 using the same metalorganic precursor.

Hatch, Kevin A. (ORCID:0000000283118623)↗
DOE OSTI2020

Gallium Oxide Techno-Economic Analysis for the Wide Bandgap Semiconductor Market

More than 30% of electrical energy passes through power electronics today with speculation that in the next decade this could grow to 80%. The wide bandgap semiconductor market is already approaching $1 billon USD in 2019 and is projected to be almost $7 billion USD in 2028. Even with its high cost, SiC, is starting to dislodge the incumbent Si technology in some applications, such as hybrid and electric vehicles, due to smaller size, and higher efficiency. We review and report the IHS Markit’s market predictions for wide bandgap semiconductor technologies, and highlight the technoeconomic analysis results for the manufacturing cost of Ga2O3 wafers. Specifically, we focus on the potential for Ga2O3 to be more economically advantageous than SiC using current manufacturing methods and then identify opportunities where research can further reduce the volume cost of Ga2O3 wafers.

28 EE - Advanced Manufacturing Office (EE-5A)↗
DOE OSTI2024

Deep-ultraviolet transparent conducting SrSnO 3 via heterostructure design

Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. Here, we used a thin heterostructure design to facilitate high conductivity due to the low electron mass and relatively weak electron-phonon coupling, while the atomically thin films ensured high transparency. We used a heterostructure comprising SrSnO 3 /La:SrSnO 3 /GdScO 3 (110), and applied electrostatic gating, which allow us to effectively separate charge carriers in SrSnO 3 from dopants and achieve phonon-limited transport behavior in strain-stabilized tetragonal SrSnO 3 . This led to a modulation of carrier density from 10 18 to 10 20 cm −3 , with room temperature mobilities ranging from 40 to 140 cm 2 V −1 s −1 . The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room temperature mobility could be further increased with higher electron density. In addition, the sample exhibited 85% optical transparency at a 300-nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in DUV regime.

Science & Technology - Other Topics↗
DOE OSTI2020

Electrical power generation from moderate-temperature radiative thermal sources

Moderate-temperature thermal sources (100° to 400°C) which radiate waste heat are often the by-product of mechanical work, chemical or nuclear reactions, or information processing. We demonstrate conversion of thermal radiation into electrical power using a bipolar grating-coupled complementary metal-oxide-silicon (CMOS) tunnel diode. A two-step photon-assisted tunneling charge pumping mechanism results in separation of charge carriers in pn-junction wells leading to a large open-circuit voltage developed across a load. Electrical power generation from a broadband blackbody thermal source has been experimentally demonstrated with converted power densities of 27 to 61 microwatts per square centimeter for thermal sources between 250° and 400°C. Scalable, efficient conversion of radiated waste heat into electrical power can be used to reduce energy consumption or to power electronics and sensors.

30 DIRECT ENERGY CONVERSION↗