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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The RAINBOW multi band gap system represents a unique combination of solar cells, concentrators and beam splitters. RAINBOW is a flexible system which can readily expand as new high efficiency components are developed.
Direct and thin, or indirect and thick absorbers can yield cells close to 30% but there are practical limits due to defects, cost, reliability. Tandems and new ideas are needed to minimize thermalization and entropy losses and to enable high absorptance in thin Si layers. Direct-gap absorbers have ~1000x higher recombination losses than Si, but being 100x thinner, the limiting 1-sun efficiencies are similar due to 100x higher G.
Suppressing the photon energy loss (E loss ), especially the non-radiative loss, is of importance to further improve the device performance of organic solar cells (OSCs). However, typical π-conjugated semiconductors possess a large singlet–triplet energy gap (ΔE ST ), leading to a lower triplet state than charge transfer state and contributing to a non-radiative loss channel of the photocurrent by the triplet state. Herein, a series of triplet polymer donors are developed by introducing a BNIDT block into the PM6 polymer backbone. Further, the high electron affinity of BNIDT and the opposite resonance effect of the B—N bond in BNIDT results in a lowered highest occupied molecular orbital (HOMO) and a largely reduced ΔE ST . Moreover, the morphology of the active blends is also optimized by fine-tuning the BNIDT content. Therefore, non-radiative recombination via the terminal triplet loss channels and morphology traps is effectively suppressed. The PNB-3 (with 3% BNIDT):L8-BO device exhibits both small ΔE ST and optimized morphology, favoring more efficient charge transfer and transport. Finally, the simultaneously enhanced V oc of 0.907 V, J sc of 26.59 mA cm –2 , and FF of 78.86% contribute to a champion PCE of 19.02%. Therefore, introducing B—N bonds into benchmark polymers is a possible avenue toward higher-performance of OSCs.
Perovskite solar cells have recently enabled power conversion efficiency comparable to established technologies such as silicon and cadmium telluride. Ongoing efforts to improve the stability of halide perovskites in ambient air has yielded promising results. However, the presence of toxic heavy element lead (Pb) remains a major concern requiring further attention. Herein, we report three new Pb-free hybrid organic–inorganic perovskite-type halides based on gold (Au), (CH 3 NH 3 )AuBr 4 ·H 2 O ( 1 ), (CH 3 NH 3 )AuCl 4 ·H 2 O ( 2 ), and (CH 3 NH 3 )AuCl 4 ( 3 ). Hydrated compounds 1 and 2 crystallize in a brand-new structure type featuring perovskite-derived 2D layers and 1D chains based on pseudo-octahedral AuX 6 building blocks. In contrast, the novel crystal structure of the solvent-free compound 3 shows an exotic non-perovskite quasi-2D layered structure containing edge- and corner-shared AuCl 6 octahedra. The use of Au metal instead of Pb results in unprecedented low band gaps below 2.5 eV for single-layered metal chlorides and bromides. Moreover, at room temperature the three compounds show a weak blue emission due to the electronic transition between Au-6s and Au-5d, in agreement with the density function theory (DFT) calculation results. These findings are discussed in the context of viability of Au-based halides as alternatives for Pb-based halides for optoelectronic applications.
The 5d transition metal oxide Sr{sub 2}IrO{sub 4} has attracted much interest in the high-temperature superconductivity community since it highly resembles the cuprate superconductor in crystal and electronic structures. Here, we report on the transport and magnetic properties of Zn-doped Sr{sub 2}IrO{sub 4}. It is found that the energy gap of Sr{sub 2}IrO{sub 4} is rapidly decreased with a small amount of Zn doping. Consequently, the electrical conductivity is significantly enhanced. The present work could serve as the prerequisite stage in exploring the possible superconductivity of the Sr{sub 2}IrO{sub 4} compound.
The Materials Genome Initiative (MGI) which is a key enabler for the Advanced Manufacturing Partnership, announced in 2011 by U.S. President Barack Obama, was established to accelerate the development and deployment of advanced materials. The MGI is driven by the need to "bridge the gap" between (I) experimental results and computational analysis to enable the rapid development and validation of new mateirals, and (II) the processes required to convert these materials into useable goods.
On the path to deployment of any reactor, modeling tool verification and validation is a key step. Fluoride-Salt-Cooled High Temperature Reactors (FHR) pose challenges to neutronics modeling and simulation tools due to several design features of the reactor type. This paper presents a categorized list of phenomena that pose challenges to FHR modeling using current neutronics tools. These phenomena are presented in four categories: Fundamental Cross Section Data, Material Composition, Computational Methodology, and General Depletion. Here, a short path forward for these phenomena is also presented. In addition, a discussion of the resulting gaps in current codes is presented.
Increasing performance in microbial electrolysis cells (MECs) requires the development of optimized reactor configurations with minimal internal resistance and capable to operate with real wastewater. Here, the impact of two different flow fields (serpentine and circular) was examined in zero-gap MECs with synthetic and real wastewaters. The serpentine flow field enabled a uniform distribution of the electrolyte in the anode chamber, resulting in larger current densities at lower flow rates compared to the circular flow field. Electrochemical tests using synthetic media with high buffer capacity revealed more stable and higher performance with the serpentine flow field compared to the circular flow path, producing larger current density (23.7 ± 0.8 A/m 2 vs 21.9 ± 5.6 A/m 2 ), hydrogen production rate (75.8 ± 4.1 L/L-d vs 54.3 ± 2.4 L/L-d), cathodic coulombic efficiency (>91 % vs >50 %), and an overall lower internal resistance (12.5 ± 0.5 mΩm 2 vs 14.8 ± 3.7 mΩm 2 ). Continuous operation for over 30 days with real wastewater indicated higher tolerance of the MECs with serpentine flow field toward media with large concentration of suspended solids, producing a current density of 5.4 ± 1.1 A/m 2 and a hydrogen production rate of 22.2 ± 6.2 L/L-d. Furthermore, the results presented here underscore the importance of reactor design and architecture in optimizing MEC performance for hydrogen production from liquid wastes.
Pulp and paper (P&P) manufacturing requires a large amount of low-pressure (LP) steam to digest, wash wood fibers and dry pulp into paper. Most of the LP steam is extracted from backpressure turbines that produce power from high-pressure (HP) steam. This HP steam is generated from burning wood waste material; bark is burned in hog boilers, and lignin is boiled in a black liquor recovery boiler. In a typical integrated P&P mill, 50–100% of the steam is produced from these sources, while additional steam is produced in natural gas (NG), fuel oil, or coal boilers. The other energy-intensive process in the plant is the chemical-recovery section (e.g., lime kiln), which requires high-temperature processing from NG combustion to retrieve and recirculate spent chemicals. This paper assesses the energy and heat demand and material balances of a typical generic kraft pulp mill, along with the nuclear heat, steam, and power integration opportunities to replace conventional combustion systems. The paper also addresses steam and electricity generation through a comprehensive technical and engineering gap analysis of five different nuclear-integration opportunities and their process economics, thus enabling the lignin and bark to be further processed into biobased chemicals or fuels, as well as the potential to reduce overall emissions from kraft pulping. Preliminary findings have shown that the P&P industry could achieve technological benefits by integrating their current manufacturing process with small modular nuclear reactors (SMNRs) on a national level. This research aims to set the path forward for a cleaner and more resilient P&P industry.
Various spectral control techniques can be applied to improve the performance of a thermophotovoltaic (TPV) device. For example, a back surface reflector (BSR) is a common structure to improve the performance of TPV devices. A conventional metal BSR structure enhances the photogeneration rate by increasing the absorption probability of photons via back surface reflections, affording a second chance for absorption. However, the effects of surface passivation and external luminescence introduced by BSR structures have been previously ignored, which potentially decreases the performance of TPV devices. Recently, a back gapped reflector (BGR) structure was proposed to greatly improve the performance of far-field TPV devices by reducing imperfect reflections at the semiconductor-metal interface. In the present work, the performance improvement on a thin-film, near-field InAs TPV device with a BGR is investigated, comparing its performance to that with a conventional metal BSR. Surface passivation conditions are also investigated to further improve the performance of TPV devices with back reflectors. Further, the output power and efficiency are calculated using an iterative model combining fluctuational electrodynamics and the full drift diffusion model. For the well-passivated condition, when the BSR is replaced by the BGR, the calculated conversion efficiency of the near-field TPV was improved from 16.4% to 21% and the output power was increased by 10%. Finally, the absorption of the back reflectors and external luminescence loss are analyzed to explain the performance improvement.
The adsorption and decomposition mechanisms for 1-propanethiol on a Ga-rich GaP(001) (2 × 4) surface are investigated at an atomic level using scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy, and density functional theory (DFT) calculations. Using a combination of experimental and theoretical tools, we probe the detailed structures and energetics of a series of reaction intermediates in the thermal decomposition pathway from 130 to 773 K. At 130 K, the propanethiolate adsorbates are observed at the edge gallium sites, with the thiolate–Ga bonding configuration maintained up to 473 K. Further decomposition produces two new surface features, Ga–S–Ga and P-propyl species at 573 K. Finally, S-induced (1 × 1) and (2 × 1) reconstructions are observed at 673–773 K, which are reportedly associated with arrays of surface Ga–S–Ga bonds and subsurface diffusion of S. To understand the observed site-selectivity on the hydrogen dissociation of the thiol molecule at 130 K, the two most likely dissociation pathways (Ga–P vs Ga–Ga dimer sites) are investigated using DFT Gibbs energy calculations. While the theory predicts the kinetic advantage for the dissociation reaction occurring on the Ga–P dimer (Lewis acid–base combination), we only observed dissociation products on the Ga–Ga dimer (Lewis acid). Here, the DFT calculations clarify that the reversible thiolate diffusion along the Ga dimer row prevents recombinative desorption, which is probable on the Ga–P dimer. Together with experimental and theoretical results, we suggest a thermal decomposition mechanism for the thiol molecule with atomic-level structural details.
Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moiré superlattices (MSLs) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography-defined semiconductor MSLs, in which three fundamental parameters electron−electron interaction, spin−orbit coupling, and band topology are designable. We experimentally investigate quantum-transport properties in a moiré specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum-information and microelectronics technologies.
Partial oxidation catalysis is often fraught with selectivity problems, largely because there is a tendency of oxidation products to be more reactive than the starting material. One industrial process that has successfully overcome this problem is partial oxidation of methanol to formaldehyde. This process has become a global success, with an annual production of 30 million tons. Although ruthenium catalysts have not shown activity as high as the current molybdena or silver-based industrial standards, the study of ruthenium systems has the potential to elucidate which catalyst properties facilitate the desired partial oxidation reaction as opposed to deep combustion due to a pressure-dependent selectivity “switch” that has been observed in ruthenium-based catalysts. In this work, we find that we are able to successfully rationalize this “pressure gap” using near-ab initio steady-state microkinetic modeling on RuO 2 (110). We obtain molecular desorption prefactors from experiment and determine all other energetics using density functional theory. We show that, under ambient pressure conditions, formaldehyde production is favored on RuO 2 (110), whereas under ultrahigh vacuum pressure conditions, full combustion to CO 2 takes place. We glean from our model several insights regarding how coverage effects, oxygen activity, and rate-determining steps influence selectivity and activity. As a result, we believe the understanding gained in this work might advise and inspire the greater partial oxidation community and be applied to other catalytic processes which have not yet found industrial success.
Topographically flat, single crystal silicon supersaturated with the chalcogens S, Se, and Te was prepared by ion implantation followed by pulsed laser melting and rapid solidification. The influences of the number of laser shots on the atomic and carrier concentration-depth profiles were measured with secondary ion mass spectrometry and spreading resistance profiling, respectively. We found good agreement between the atomic concentration-depth profiles obtained from experiments and a one-dimensional model for plane-front melting, solidification, liquid-phase diffusion, with kinetic solute trapping, and surface evaporation. Broadband subband gap absorption is exhibited by all dopants over a wavelength range from 1 to 2.5 microns. The absorption did not change appreciably with increasing number of laser shots, despite a measurable loss of chalcogen and of electronic carriers after each shot.
A model for the multiple-pulse laser-induced breakdown behavior of dielectrics is presented. It is based on a critical conduction band (CB) electron density leading to dielectric breakdown. The evolution of the CB electron density during the pulse train is calculated using rate equations involving transitions between band and mid-gap states (native and laser-induced). Using realistic estimations for the trap density and ionization cross-section, the model is able to reproduce the experimentally observed drop in the multiple-pulse damage threshold relative to the single-pulse value, as long as the CB electron density is controlled primarily by avalanche ionization seeded by multiphoton ionization of the traps and the valence band. The model shows that at long pulse duration, the breakdown threshold becomes more sensitive to presence of traps close (within one photon energy) to the CB. The effect of native and laser-induced defects can be distinguished by their saturation behavior. Finally, measurements of the multiple-pulse damage threshold of hafnium oxide films are used to illustrate the application of the model.
We have prepared and investigated thin films of EuO doped with the rare-earth element cerium. X-ray diffraction, scanning electron microscopy, and energy dispersive x-ray spectroscopy were used to determine the quality of these films prepared by pulsed laser deposition. Ce doping leads to an enhanced Curie temperature near 150 K, close to that seen for oxygen-deficient EuO{sub 1-x}. However, the magnetization of Ce-doped EuO exhibits differences from that observed for Gd-doped and oxygen-deficient samples. The high-resolution angular-resolved photoemission from Ce-doped EuO reveals filling of conduction-band states near the X point. This indicates that the band gap in EuO is indirect, and that at 2% doping Ce-doped EuO{sub 1-x} is at least semimetallic.
In situ variations in the electron work function and photo-current of TiO{sub 2} nanotubes demonstrate that long-wavelength illumination only has a minor effect on the excitation of electrons in the nanotubes after being exposed to short-wavelength light or when the short-wavelength light coexisted, indicating that the solar spectrum may not be utilized as efficiently as expected by extending the absorption spectrum of the photocatalytic material to visible light range with decreased band gaps.
We have investigated the electronic structure of anionic mono- (S, N, and C) and co-doping (N-N, C-N, S-C, and S-N) on BiNbO{sub 4} for the visible-light photocatalysis. The maximum band gap reduction of pure BiNbO{sub 4} is possible with the (C-S) co-doping and minimum with N mono-doping. The calculated binding energies show that the co-doped systems are more stable than their mono-doped counterparts. Our optical absorption curves indicate that the mono- (C) and co-anionic doped (N-N and C-S) BiNbO{sub 4} systems are promising materials for visible light photocatalysis.