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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,513 records · Page 84
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Emitter/absorber interface of CdTe solar cells

The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These materials are predicted to yield higher voltages and would therefore be better candidates for the CdTe-cell emitter.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Donor and double-donor transitions of the carbon vacancy related EH{sub 6∕7} deep level in 4H-SiC

Using medium- and high-resolution multi-spectra fitting of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), optical O-DLTS and optical-electrical (OE)-MCTS measurements, we show that the EH{sub 6∕7} deep level in 4H-SiC is composed of two strongly overlapping, two electron emission processes with thermal activation energies of 1.49 eV and 1.58 eV for EH{sub 6} and 1.48 eV and 1.66 eV for EH{sub 7}. The electron emission peaks of EH{sub 7} completely overlap while the emission peaks of EH{sub 6} occur offset at slightly different temperatures in the spectra. OE-MCTS measurements of the hole capture cross section σ{sub p0}(T) in p-type samples reveal a trap-Auger process, whereby hole capture into the defect occupied by two electrons leads to a recombination event and the ejection of the second electron into the conduction band. Values of the hole and electron capture cross sections σ{sub n}(T) and σ{sub p}(T) differ strongly due to the donor like nature of the deep levels and while all σ{sub n}(T) have a negative temperature dependence, the σ{sub p}(T) appear to be temperature independent. Average values at the DLTS measurement temperature (∼600 K) are σ{sub n2+}(T) ≈ 1 × 10{sup −14} cm{sup 2}, σ{sub n+}(T) ≈ 1 × 10{sup −14} cm{sup 2}, and σ{sub p0}(T) ≈ 9 × 10{sup −18} cm{sup 2} for EH{sub 6} and σ{sub n2+}(T) ≈ 2 × 10{sup −14} cm{sup 2}, σ{sub n+}(T) ≈ 2 × 10{sup −14} cm{sup 2}, σ{sub p0}(T) ≈ 1 × 10{sup −20} cm{sup 2} for EH{sub 7}. Since EH{sub 7} has already been identified as a donor transition of the carbon vacancy, we propose that the EH{sub 6∕7} center in total represents the overlapping first and second donor transitions of the carbon vacancy defects on both inequivalent lattice sites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Imaging a multidimensional multichannel potential energy surface: Photodetachment of H{sup −}(NH{sub 3}) and NH{sub 4}{sup −}

Probes of the Born-Oppenheimer potential energy surfaces governing polyatomic molecules often rely on spectroscopy for the bound regions or collision experiments in the continuum. A combined spectroscopic and half-collision approach to image nuclear dynamics in a multidimensional and multichannel system is reported here. The Rydberg radical NH{sub 4} and the double Rydberg anion NH{sub 4}{sup −} represent a polyatomic system for benchmarking electronic structure and nine-dimensional quantum dynamics calculations. Photodetachment of the H{sup −}(NH{sub 3}) ion-dipole complex and the NH{sub 4}{sup −} DRA probes different regions on the neutral NH{sub 4} PES. Photoelectron energy and angular distributions at photon energies of 1.17, 1.60, and 2.33 eV compare well with quantum dynamics. Photoelectron-photofragment coincidence experiments indicate dissociation of the nascent NH{sub 4} Rydberg radical occurs to H + NH{sub 3} with a peak kinetic energy of 0.13 eV, showing the ground state of NH{sub 4} to be unstable, decaying by tunneling-induced dissociation on a time scale beyond the present scope of multidimensional quantum dynamics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Photodissociation dynamics of the iodide-uracil (I{sup −}U) complex

Photofragment action spectroscopy and femtosecond time-resolved photoelectron imaging are utilized to probe the dissociation channels in iodide-uracil (I{sup −} ⋅ U) binary clusters upon photoexcitation. The photofragment action spectra show strong I{sup −} and weak [U—H]{sup −} ion signal upon photoexcitation. The action spectra show two bands for I{sup −} and [U—H]{sup −} production peaking around 4.0 and 4.8 eV. Time-resolved experiments measured the rate of I{sup −} production resulting from excitation of the two bands. At 4.03 eV and 4.72 eV, the photoelectron signal from I{sup −} exhibits rise times of 86 ± 7 ps and 36 ± 3 ps, respectively. Electronic structure calculations indicate that the lower energy band, which encompasses the vertical detachment energy (4.11 eV) of I{sup −}U, corresponds to excitation of a dipole-bound state of the complex, while the higher energy band is primarily a π–π{sup ∗} excitation on the uracil moiety. Although the nature of the two excited states is very different, the long lifetimes for I{sup −} production suggest that this channel results from internal conversion to the I{sup −} ⋅ U ground state followed by evaporation of I{sup −}. This hypothesis was tested by comparing the dissociation rates to Rice-Ramsperger-Kassel-Marcus calculations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Calculations of oxide formation on low-index Cu surfaces

Density-functional theory is used to evaluate the mechanism of copper surface oxidation. Reaction pathways of O{sub 2} dissociation on the surface and oxidation of the sub-surface are found on the Cu(100), Cu(110), and Cu(111) facets. At low oxygen coverage, all three surfaces dissociate O{sub 2} spontaneously. As oxygen accumulates on the surfaces, O{sub 2} dissociation becomes more difficult. A bottleneck to further oxidation occurs when the surfaces are saturated with oxygen. The barriers for O{sub 2} dissociation on the O-saturated Cu(100)-c(2×2)-0.5 monolayer (ML) and Cu(100) missing-row structures are 0.97 eV and 0.75 eV, respectively; significantly lower than those have been reported previously. Oxidation of Cu(110)-c(6×2), the most stable (110) surface oxide, has a barrier of 0.72 eV. As the reconstructions grow from step edges, clean Cu(110) surfaces can dissociatively adsorb oxygen until the surface Cu atoms are saturated. After slight rearrangements, these surface areas form a “1 ML” oxide structure which has not been reported in the literature. The barrier for further oxidation of this “1 ML” phase is only 0.31 eV. Finally the oxidized Cu(111) surface has a relatively low reaction energy barrier for O{sub 2} dissociation, even at high oxygen coverage, and allows for facile oxidation of the subsurface by fast O diffusion through the surface oxide. The kinetic mechanisms found provide a qualitative explanation of the observed oxidation of the low-index Cu surfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Measurements of laser generated soft X-ray emission from irradiated gold foils

Soft x-ray emission from laser irradiated gold foils was measured at the Omega-60 laser system using the Dante photodiode array. The foils were heated with 2 kJ, 6 ns laser pulses and foil thicknesses were varied between 0.5, 1.0, and 2.0 μm. Initial Dante analysis indicates peak emission temperatures of roughly 100 eV and 80 eV for the 0.5 μm and 1.0 μm thick foils, respectively, with little measurable emission from the 2.0 μm foils.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Band alignment of ZnO/multilayer MoS{sub 2} interface determined by x-ray photoelectron spectroscopy

The energy band alignment between ZnO and multilayer (ML)-MoS{sub 2} was characterized using high-resolution x-ray photoelectron spectroscopy. The ZnO film was deposited using an atomic layer deposition tool, and ML-MoS{sub 2} was grown by chemical vapor deposition. A valence band offset (VBO) of 3.32 eV and a conduction band offset (CBO) of 1.12 eV were obtained for the ZnO/ML-MoS{sub 2} interface without any treatment. With CHF{sub 3} plasma treatment, a VBO and a CBO across the ZnO/ML-MoS{sub 2} interface were found to be 3.54 eV and 1.34 eV, respectively. With the CHF{sub 3} plasma treatment, the band alignment of the ZnO/ML-MoS{sub 2} interface has been changed from type II or staggered band alignment to type III or misaligned one, which favors the electron-hole pair separation. The band alignment difference is believed to be dominated by the down-shift in the core level of Zn 2p or the interface dipoles, which is caused by the interfacial layer rich in F.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

Heterostructures with CdTe and CdTe{sub 1-x}Se{sub x} (x ∼ 0.01) absorbers between two wider-band-gap Cd{sub 1-x}Mg{sub x}Te barriers (x ∼ 0.25–0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ∼6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Signatures of vibronic coupling in two-dimensional electronic-vibrational and vibrational-electronic spectroscopies

Two-Dimensional Electronic-Vibrational (2D EV) spectroscopy and Two-Dimensional Vibrational-Electronic (2D VE) spectroscopy are new coherent four-wave mixing spectroscopies that utilize both electronically resonant and vibrationally resonant field-matter interactions to elucidate couplings between electronic and vibrational degrees of freedom. Here, a system Hamiltonian is developed to lay a foundation for interpreting the 2D EV and 2D VE signals that arise from a vibronically coupled molecular system in the condensed phase. A molecular system consisting of one anharmonic vibration and two electronic states is modeled. Equilibrium displacement of the vibrational coordinate and vibrational frequency shifts upon excitation to the first electronic excited state are included in our Hamiltonian through linear and quadratic vibronic coupling terms. We explicitly consider the nuclear dependence of the electronic transition dipole moment and demonstrate that these spectroscopies are sensitive to non-Condon effects. A series of simulations of 2D EV and 2D VE spectra obtained by varying parameters of the system, system-bath, and interaction Hamiltonians demonstrate that one of the following conditions must be met to observe signals: (1) non-zero linear and/or quadratic vibronic coupling in the electronic excited state, (2) vibrational-coordinate dependence of the electronic transition dipole moment, or (3) electronic-state-dependent vibrational dephasing dynamics. We explore how these vibronic interactions are manifested in the positions, amplitudes, and line shapes of the peaks in 2D EV and 2D VE spectroscopies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Determining the ion temperature and energy distribution in a lithium-plasma interaction test stand with a retarding field energy analyzer

The ThermoElectric-driven Liquid-metal plasma-facing Structures (TELS) experiment at the University of Illinois is a gas-puff driven, theta-pinch plasma source that is used as a test stand for off-normal plasma events incident on materials in the edge and divertor regions of a tokamak. The ion temperatures and resulting energy distributions are crucial for understanding how well a TELS pulse can simulate an extreme event in a larger, magnetic confinement device. A retarding field energy analyzer (RFEA) has been constructed for use with such a transient plasma due to its inexpensive and robust nature. The innovation surrounding the use of a control analyzer in conjunction with an actively sampling analyzer is presented and the conditions of RFEA operation are discussed, with results presented demonstrating successful performance under extreme conditions. Such extreme conditions are defined by heat fluxes on the order of 0.8 GW m -2 and on time scales of nearly 200 μs. Measurements from the RFEA indicate two primary features for a typical TELS discharge, following closely with the pre-ionizing coaxial gun discharge characteristics. For the case using the pre-ionization pulse (PiP) and the theta pinch, the measured ion signal showed an ion temperature of 23.3 ± 6.6 eV for the first peak and 17.6 ± 1.9 eV for the second peak. For the case using only the PiP, the measured signal showed an ion temperature of 7.9 ± 1.1 eV for the first peak and 6.6 ± 0.8 eV for the second peak. These differences illustrate the effectiveness of the theta pinch for imparting energy on the ions. This information also highlights the importance of TELS as being one of the few linear pulsed plasma sources whereby moderately energetic ions will strike targets without the need for sample biasing.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

Sub-band-gap absorption in Ga 2 O 3

β-Ga 2 O 3 is a transparent conducting oxide that, due to its large bandgap of 4.8 eV, exhibits transparency into the UV. However, the free carriers that enable the conductivity can absorb light. We study the effect of free carriers on the properties of Ga 2 O 3 using hybrid density functional theory. The presence of free carriers leads to sub-band-gap absorption and a Burstein-Moss shift in the onset of absorption. We find that for a concentration of 10 20 carriers, the Fermi level is located 0.23 eV above the conduction-band minimum. This leads to an increase in the electron effective mass from 0.27–0.28 m e to 0.35–0.37 me and a sub-band-gap absorption band with a peak value of 0.6 × 10 3 cm –1 at 3.37 eV for light polarized along the x or z direction. Both across-the-gap and free-carrier absorption depend strongly on the polarization of the incoming light. We also provide parametrizations of the conduction-band shape and the effective mass as a function of the Fermi level. β-Ga 2 O 3 exhibits very good electronic conductivity in spite of its bandgap of 4.8 eV; this large gap makes it transparent into the UV. This combination allows for applications in devices such as deep-UV blind detectors and contacts for solar cells. It also enables high-power devices, such as high-voltage metal-semiconductor field-effect transistors and Schottky barrier diodes.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN

AlxGa1-xN is characterized by a significant spontaneous and piezoelectric polarization, which increases with the aluminum content. As a result, a surface bound charge is present, which favors compensation by surface states and influences the reliability of AlGaN/GaN devices. This work, therefore, focused on the effects of the polarization charge for GaN and AlGaN with three different aluminum concentrations 15%, 25%, and 35%. The band bending of AlxGa1-xN surfaces was measured after a N2/H2 plasma pretreatment, which reduced the carbon and oxygen contamination below the detection limit of x-ray photoelectron spectroscopy. Surface band bending was then related to surface states, where the band bending of oxygen-free surfaces—as obtained with a high-temperature, immersed hydrogen/nitrogen plasma clean—scales with the aluminum content. In addition, the band offsets at the plasma-enhanced atomic layer deposited SiO2/AlxGa1-xN interface were measured, giving 3.4 eV, 3.3 eV, 3.3 eV, and 3.0 eV for respective 0%, 15%, 25%, and 35% aluminum concentrations. These values are in accordance with the charge neutrality level model, which implies that SiO2 will confine carriers over nearly the full range of the aluminum content.

Eller, Brianna S.↗
DOE OSTI2018

Photoelectron spectroscopy of anthracene and fluoranthene radical anions

Here, we report the slow electron velocity map imaging spectroscopy of cryogenically cooled anthracene and fluoranthene radical anions, two similarly sized polycyclic aromatic hydrocarbon molecules. The results allow us to examine the lowest energy singlet and triplet states in the neutral molecules on equal footing from the anionic ground state. The analysis of the experimental spectra is aided by harmonic calculations and Franck-Condon simulations, which generally show good agreement with experimental values and spectra. The electron affinity of fluoranthene is measured to be 0.757(2) eV, which is larger than that of anthracene at 0.532(3) eV. The lowest energy triplet state in anthracene is observed at 1.872(3) eV above the singlet ground state, while that of fluoranthene is observed at 2.321(2) eV above its singlet ground state. Comparisons of experimental and calculated spectra show that in addition to the Franck-Condon active modes, there is a clear presence of vibrational modes that gain intensity via vibronic coupling in both the singlet and triplet states in both molecules. In addition, the triplet state generally exhibits increased vibronic coupling compared to the singlet state, with the fluoranthene triplet state exhibiting evidence of distortion from C 2v symmetry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Dual-pass upgrade to the Thomson scattering diagnostic on the Prototype-Material Plasma Exposure eXperiment (Proto-MPEX)

The Thomson scattering (TS) diagnostic on the Prototype-Material Plasma Exposure eXperiment has been upgraded to measure electron temperature (T e ) and density (n e ) simultaneously at two axial locations. After the first pass through the vacuum vessel, the exiting laser beamline is re-collimated in the atmosphere and rerouted into the vacuum vessel for the second pass. The upgrade will help diagnose axial T e and n e gradients between the “central chamber” and the target region which are located 1 m and 2.5 m, respectively, downstream from the Helicon radio-frequency source. The TS measurements have given T e ≈ 4–15 eV and n e ≈ 2–4 × 10 19 m -3 at the central chamber and T e ≈ 1–2 eV and n e ≈ 1–2 × 10 19 m -3 at the target region. The upgrade also increases the number of sampling points at the target region from 3 fibers to 5 fibers, measuring 3 cm radially across the plasma column, and 25 fibers in the central chamber, radially spanning 8 cm. The intensified CCD camera is double triggered for each laser pulse in order to measure (1) the TS and laser stray light and (2) the plasma background light that contains nuisance emission lines and bremsstrahlung. Subtracting the background light from the TS photons improves the temperature and density measurements. Details of the diagnostic setup, axial and radial measurements, and areas for further optimization are discussed.

dual-pass Thomson Scattering↗
DOE OSTI2018

Reliable density functional calculations for the electronic structure of thermoelectric material ZnSb

In this paper, we present the results of systematic test calculations for the electronic structure of thermoelectric material ZnSb using a first-principles full-potential all electron computational method. We used a linear combination of atomic orbitals (LACO) formalism, based on density functional theory (DFT). The exchange-correlation interaction potential of the many electron system was described by using a generalized gradient approximation (GGA). We compared the calculated indirect and direct band gaps as well as the effective masses of holes and electrons in ZnSb with experimental measurement results. The calculated indirect band gap of ZnSb is 0.56 eV, which agrees very well with the experimentally measured values of 0.50 eV ~ 0.61 eV. The calculated direct band gap at X point is 0.89 eV. The calculated effective masses of electrons and holes in ZnSb also agree with experimental data. The systematical test calculations as well as the comparisons of the calculated results with experimental measurements show that the obtained electronic structure of ZnSb would be reliable. We did not observe a major deficiency of the first-principles DFT calculation for the electronic structure of ZnSb, using full-potential all electron LACO method. The reported electronic structure of single crystal ZnSb from this work may provide a fundamental knowledge base for further research and applications for this important thermoelectric material.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Performance of ePix10K, a high dynamic range, gain auto-ranging pixel detector for FELs

ePix10K is a hybrid pixel detector developed at SLAC for demanding free-electron laser (FEL) applications, providing an ultrahigh dynamic range (245 eV to 88 MeV) through gain auto-ranging. It has three gain modes (high, medium and low) and two auto-ranging modes (high-to-low and medium-to-low). The first ePix10K cameras are built around modules consisting of a sensor flip-chip bonded to 4 ASICs, resulting in 352 × 384 pixels of 100 µm x 100 µm each. We present results from extensive testing of three ePix10K cameras with FEL beams at LCLS, resulting in a measured noise floor of 245 eV rms, or 67 e - equivalent noise charge (ENC), and a range of 11 000 photons at 8 keV. We demonstrate the linearity of the response in various gain combinations: fixed high, fixed medium, fixed low, auto-ranging high to low, and auto-ranging medium-to-low, while maintaining a low noise (well within the counting statistics), a very low cross-talk, perfect saturation response at fluxes up to 900 times the maximum range, and acquisition rates of up to 480 Hz. Finally, we present examples of high dynamic range x-ray imaging spanning more than 4 orders of magnitude dynamic range (from a single photon to 11 000 photons/pixel/pulse at 8 keV). Achieving this high performance with only one auto-ranging switch leads to relatively simple calibration and reconstruction procedures. The low noise levels allow usage with long integration times at non-FEL sources. ePix10K cameras leverage the advantages of hybrid pixel detectors with high production yield and good availability, minimize development complexity through sharing the hardware, software and DAQ development with all other versions of ePix cameras, while providing an upgrade path to 5 kHz, 25 kHz and 100 kHz in three steps over the next few years, matching the LCLS-II requirements.

47 OTHER INSTRUMENTATION↗
DOE OSTI2019

Low energy secondary electron induced damage of condensed nucleotides

Radiation damage and stimulated desorption of nucleotides 2'-deoxyadenosine 5'-monophosphate (dAMP), adenosine 5'-monophosphate (rAMP), 2'-deoxycytidine 5'-monophosphate (dCMP), and cytidine 5'-monophosphate (rCMP) deposited on Au have been measured using x-rays as both the probe and source of low energy secondary electrons. The fluence dependent behavior of the O-1s, C-1s, and N-1s photoelectron transitions was analyzed to obtain phosphate, sugar, and nucleobase damage cross sections. Although x-ray induced reactions in nucleotides involve both direct ionization and excitation, the observed bonding changes were likely dominated by the inelastic energy-loss channels associated with secondary electron capture and transient negative ion decay. Growth of the integrated peak area for the O-1s component at 531.3 eV, corresponding to cleavage of the C—O—P phosphodiester bond, yielded effective damage cross sections of about 23 Mb and 32 Mb (1 Mb = 10 –18 cm 2 ) for AMP and CMP molecules, respectively. The cross sections for sugar damage, as determined from the decay of the C-1s component at 286.4 eV and the glycosidic carbon at 289.0 eV, were slightly lower (about 20 Mb) and statistically similar for the r- and d- forms of the nucleotides. Here, the C-1s component at 287.6 eV, corresponding to carbons in the nucleobase ring, showed a small initial increase and then decayed slowly, yielding a low damage cross section (~5 Mb). Although there is no statistical difference between the sugar forms, changing the nucleobase from adenine to cytidine has a slight effect on the damage cross section, possibly due to differing electron capture and transfer probabilities.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

Utilization of O-X-B mode conversion of 28 GHz microwaves to heat core electrons in the upgraded Proto-MPEX

The magnetic geometry of the Prototype Material Plasma Exposure eXperiment (Proto-MPEX) was recently altered to enable more effective utilization of 28 GHz microwave auxiliary power, specifically: (1) to heat plasma electrons in the radial core of the device and (2) to deliver the heated plasma to the target plate of the device. To achieve this goal, the microwave launcher geometry and placement were significantly re-engineered, guided by previous experimental results and computational modeling. The core electron temperature in the launcher region is observed to increase from 3 eV to 11 eV with 30 kW of auxiliary power after the improvements, and an increase from 3 eV to 6 eV is concurrently measured in the target region (~1 m from the launcher) at electron density above O-mode cutoff. Radially resolved measurements in the launcher region exhibit a strong dependence on the magnetic geometry. The conclusions of a magnetic field scan reinforce the effectiveness of the intended O-X-B mode conversion scenario that is currently planned for microwave heating of the Material Plasma Exposure eXperiment (MPEX).

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗