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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,513 records · Page 84
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Improving Stability of Zeolites in Aqueous Phase via Selective Removal of Structural Defects

This work reports significant improvement in the hydrothermal stability of a well-characterized BEA zeolite via the selective removal of structural defects. Recent work suggests that the presence of silanol defects destabilizes the framework integrity of most zeolites and makes them susceptible to hydrolysis of the siloxy bonds by hot liquid water. The described approach allows for a key removal of silanols as shown with 29Si-MAS-NMR. Subsequently, the material stability in hot liquid water, measured by retention of its crystallinity with X-ray diffraction (XRD), is found to be superior to defective zeolites. In addition, N2-sorption measurements (BET) and transmission electron microscopy (TEM) show the formation of different types of mesoporosity for water-treated stabilized and unmodified materials. While the sorption capacity for untreated materials drops, related to re-precipitation of dissolved silica and pore blocking, the stabilized material retains its microporosity and improves its overall sorption capacity. The authors would like to thank B. W. Arey (PNNL) for HIM measurements and I. Arslan for TEM imaging. This work was supported by the U. S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences & Biosciences. SP and MD acknowledge support by the Materials Synthesis and Simulation Across Scales (MS3 Initiative) conducted under Laboratory Directed Research & Development Program at PNNL.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2025

Defect-Driven Redox Interplay on Anatase TiO 2 : Surface-Structure Dependent Activation for CO 2 Hydrogenation Catalysis

Titanium dioxide (TiO 2 ) is one of the most extensively studied oxides as an active catalyst or catalyst support, particularly in energy and environmental applications, but the atomistic mechanisms governing its dynamic response to reactive environments and their correlation to reactivity remain largely elusive. Using in situ environmental transmission electron microscopy (ETEM), synchrotron X-ray diffraction (XRD), ambient-pressure X-ray photoelectron spectroscopy (AP-XPS), temperature-programmed reduction (TPR), reactivity measurements, and theoretical modeling, we reveal the dynamic interplay between oxygen loss and replenishment of anatase TiO 2 under varying reactive conditions. Under H 2 exposure, anatase TiO 2 undergoes surface reduction via lattice oxygen loss, forming Ti 3 O 5 . In contrast, CO 2 exposure induces oxygen replenishment, reversing stoichiometry. In mixed H2/CO 2 environments, the reverse water–gas shift (RWGS) reaction proceeds selectively on stepped and high-indexed TiO 2 surfaces, whereas the thermodynamically stable TiO 2 (101) surface remains inactive and intact. Critically, H 2 pretreatment generates oxygen vacancies on TiO 2 (101), transforming it into an active Ti 3 O 5 or defect-rich surface that catalyzes RWGS. By correlating surface structure, defect dynamics, and gas-phase interactions, this work deciphers the competition between H 2 -driven reduction and CO 2 -driven oxidation pathways at the atomic scale. Furthermore, these insights establish defect engineering as a strategic lever to activate inert TiO 2 facets, advancing the design of adaptive catalysts for sustainable fuel synthesis technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Stable Metal–Organic Electrocatalysts for Anion-Exchange Membrane Water Electrolyzers by Defect Engineering

Developing efficient and durable catalysts for the alkaline oxygen evolution reaction (OER) is vital to achieving practical anion-exchange membrane water electrolyzers (AEMWE) for green hydrogen production. In this work, we break the activity-stability trade-off of electrocatalysis by defect engineering of Ni-based metal-organic electrocatalysts (Ni-benzene dicarboxylate; Ni-BDC) through coordinating ferrocenecarboxylates (Fc) to the metal sites. Experimental results collectively reveal that the defect MOF (Ni-BDC:Fc_5:1) exhibits a high OER turnover frequency of 0.75 O 2 s -1 at 300 mV overpotential. Operando Raman spectroscopy and isotope-labelling electrochemical mass spectrometry measurements indicate the structure of Ni-BDC:Fc_5:1 is also more stable in service than that of pure Ni-BDC. The high activity and stability could be attributed to the moderate defects (i.e., unsaturated Ni sites) in the structure that not only increase the intrinsic activity and stability of the local active environment by inhibiting lattice oxygen exchange, but also electrochemically activates the bulk of the catalysts by creating a porous network that facilitates internal H 2 O/OH - conduction with enhanced electronic conduction. Accordingly, an AEMWE employing Ni-BDC:Fc_5:1 as the OER catalyst delivers an industrial-level current density of 1 A cm -2 at 1.73 V cell and can be steadily operated for more than 120 hours.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Understanding the Mechanism of Electronic Defect Suppression Enabled by Nonidealities in Atomic Layer Deposition

Silicon germanium (SiGe) is a multifunctional material considered for quantum computing, neuromorphic devices, and CMOS transistors. However, implementation of SiGe in nanoscale electronic devices necessitates suppression of surface states dominating the electronic properties. The absence of a stable and passive surface oxide for SiGe results in the formation of charge traps at the SiGe-oxide interface induced by GeOx. In an ideal ALD process in which oxide is grown layer by layer, the GeO x formation should be prevented with selective surface oxidation (i.e., formation of an SiO x interface) by controlling the oxidant dose in the first few ALD cycles of the oxide deposition on SiGe. However, in a real ALD process, the interface evolves during the entire ALD oxide deposition due to diffusion of reactant species through the gate oxide. In this work, this diffusion process in nonideal ALD is investigated and exploited: the diffusion through the oxide during ALD is utilized to passivate the interfacial defects by employing ozone as a secondary oxidant. Periodic ozone exposure during gate oxide ALD on SiGe is shown to reduce the integrated trap density (D it ) across the band gap by nearly 1 order of magnitude in Al 2 O 3 (<6 × 10 10 cm -2 ) and in HfO 2 (<3.9 × 10 11 cm -2 ) by forming a SiO x -rich interface on SiGe. Depletion of Ge from the interfacial layer (IL) by enhancement of volatile GeO x formation and consequent desorption from the SiGe with ozone insertion during the ALD growth process is confirmed by electron energy loss spectroscopy (STEM-EELS) and hypothesized to be the mechanism for reduction of the interfacial defects. In this work, the nanoscale mechanism for defect suppression at the SiGe-oxide interface is demonstrated, which is engineering of diffusion species in the ALD process due to facile diffusion of reactant species in nonideal ALD.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Ionization-induced annealing of pre-existing defects in silicon carbide

A long-standing objective in materials research is to find innovative ways to remove preexisting damage and heal fabrication defects or environmentally induced defects in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power, high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization processes results in a highly localized thermal spike that can effectively heal preexisting defects and restore the structural order. This work reveals an innovative self-healing process using highly ionizing ions, and it describes a critical aspect to be considered in modeling SiC performance as either a functional or a structural material for device applications or high-radiation environments.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Planar defect-driven electrocatalysis of CO 2 -to-C 2 H 4 conversion

The selectivity towards a specific C 2+ product, such as ethylene (C 2 H 4 ), is sensitive to the surface structure of copper (Cu) catalysts in carbon dioxide (CO 2 ) electro-reduction. The fundamental understanding of such sensitivity can guide the development of advanced electrocatalysts, although it remains challenging at the atomic level. In this work, we demonstrated that planar defects, such as stacking faults, could drive the electrocatalysis of CO 2 -to-C 2 H 4 conversion with higher selectivity and productivity than Cu(100) facets in the intermediate potential region (–0.50 ~ –0.65 V vs. RHE). The unique right bipyramidal Cu nanocrystals containing a combination of (100) facets and a set of parallel planar defects delivered 67% faradaic efficiency (FE) for C 2 H 4 and a partial current density of 217 mA cm –2 at –0.63 V vs. RHE. In contrast, Cu nanocubes with exclusive (100) facets exhibited only 46% FE for C 2 H 4 and a partial current density of 87 mA cm –2 at an identical potential. Both ex situ CO temperature-programmed desorption and in situ Raman spectroscopy analysis implied that the stronger *CO adsorption on planar defect sites facilitates CO generation kinetics, which contributes to a higher surface coverage of *CO and in turn an enhanced reaction rate of C–C coupling towards C 2+ products, especially C 2 H 4 .

36 MATERIALS SCIENCE↗
DOE OSTI2015

Analysis of an optimization-based atomistic-to-continuum coupling method for point defects

Here, we formulate and analyze an optimization-based Atomistic-to-Continuum (AtC) coupling method for problems with point defects. Application of a potential-based atomistic model near the defect core enables accurate simulation of the defect. Away from the core, where site energies become nearly independent of the lattice position, the method switches to a more efficient continuum model. The two models are merged by minimizing the mismatch of their states on an overlap region, subject to the atomistic and continuum force balance equations acting independently in their domains. We prove that the optimization problem is well-posed and establish error estimates.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2012

Defect microstructural evolution in ion irradiated metallic nanofoils: Kinetic Monte Carlo simulation versus cluster dynamics modeling and in situ transmission electron microscopy experiments

Understanding materials degradation under intense irradiation is important for the development of next generation nuclear power plants. Here we demonstrate that defect microstructural evolution in molybdenum nanofoils in situ irradiated and observed on a transmission electron microscope can be reproduced with high fidelity using an object kinetic Monte Carlo (OKMC) simulation technique. Main characteristics of defect evolution predicted by OKMC, namely, defect density and size distribution as functions of foil thickness, ion fluence and flux, are in excellent agreement with those obtained from the in situ experiments and from previous continuum-based cluster dynamics modeling. The combination of advanced in situ experiments and high performance computer simulation/modeling is a unique tool to validate physical assumptions/mechanisms regarding materials response to irradiation, and to achieve the predictive power for materials stability and safety in nuclear facilities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Influence of defect mobility on electrostrain in acceptor-doped Ba{sub 0.80}Sr{sub 0.20}TiO{sub 3}

This study reports significant differences in the defect-mediated electrostrain in B-site trivalent ions (Fe{sup 3+} and Mn{sup 3+}) doped Barium titanate based system. Electron Paramagnetic Resonance (EPR) Spectroscopy has been employed as a structural probe for understanding the symmetry of defects. Differences in the reorientation of the defect dipoles have been correlated with the electrostrain. Mechanism for the higher strain in Mn-doped system has also been explained.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Self healing of defected graphene

For electronics applications, defects in graphene are usually undesirable because of their ability to scatter charge carriers, thereby reduce the carrier mobility. It would be extremely useful if the damage can be repaired. In this work, we employ Raman spectroscopy, X-ray photoemission spectroscopy, transmission electron microscopy, and electrical measurements to study defects in graphene introduced by argon plasma bombardment. We have found that majority of these defects can be cured by a simple thermal annealing process. The self-healing is attributed to recombination of mobile carbon adatoms with vacancies. With increasing level of plasma induced damage, the self-healing becomes less effective.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Identification of an isolated arsenic antisite defect in GaAsBi

Optically detected magnetic resonance and photoluminescence spectroscopy are employed to study grown-in defects in GaAs{sub 0.985}Bi{sub 0.015} epilayers grown by molecular beam epitaxy. The dominant paramagnetic defect is identified as an isolated arsenic antisite, As{sub Ga}, with an electron g-factor of 2.03 ± 0.01 and an isotropic hyperfine interaction constant A = (900 ± 20) × 10{sup −4} cm{sup −1}. The defect is found to be preferably incorporated during the growth at the lowest growth temperature of 270 °C, but its formation can be suppressed upon increasing growth temperature to 315 °C. The As{sub Ga} concentration is also reduced after post-growth rapid thermal annealing at 600 °C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Motional characteristics of positively charged muonium defects in In{sub 2}O{sub 3}

We report on a study of the motional characteristics of positively charged muonium defect centers in In{sub 2}O{sub 3} powder. Zero field muon spin relaxation (ZF-MuSR) measurements were taken from 2 K to 950 K. Results show the positively charged muonium defects occupying two states (Mu{sub 1} and Mu{sub 2}) at low temperatures while a third state (Mu{sub 3}) is introduced as the temperature is increased. Mu{sub 1} is occupied more heavily than Mu{sub 2} at low temperatures by a ratio of ∼8:1. The Mu1 state changes to the Mu{sub 2} state starting at 300 K with site change energy of 0.46±0.11 eV and is essentially not occupied above 500 K. The Mu2 state becomes diffusively mobile with a barrier of 0.78±0.07 eV at 350 K and begins trapping at Mu{sub 3} at 400 K with a capture energy of 0.56±0.019 eV. A metastable region is observed between 500 K and 650 K in which the ratio between Mu{sub 2} and Mu{sub 3} amplitudes and the hop rate of Mu{sub 2} are both roughly constant, implying a steady state trap and release balance between mobile Mu{sub 2} centers and the Mu{sub 3} trap state. Above 650 K, the muonium defects release from the Mu{sub 3} trap to the Mu{sub 2} diffusive state with a dissociation energy of 0.901±0.003 eV. The upper limit on the high temperature diffusion barrier is determined, from the Mu{sub 2} hop rate, to be 0.43±0.03 eV.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Quasi-continuum photoluminescence: Unusual broad spectral and temporal characteristics found in defective surfaces of silica and other materials

We previously reported a novel photoluminescence (PL) with a distribution of fast decay times in fused silica surface flaws that is correlated with damage propensity by high fluence lasers. The source of the PL was not attributable to any known silica point defect. Due to its broad spectral and temporal features, we here give this PL the name quasi-continuum PL (QC-PL) and describe the features of QC-PL in more detail. The primary features of QC-PL include broad excitation and emission spectra, a broad distribution of PL lifetimes from 20 ps to 5 ns, continuous shifts in PL lifetime distributions with respect to emission wavelength, and a propensity to photo-bleach and photo-brighten. We found similar PL characteristics in surface flaws of other optical materials, including CaF{sub 2}, DKDP, and quartz. Based on the commonality of the features in different optical materials and the proximity of QC-PL to surfaces, we suggest that these properties arise from interactions associated with high densities of defects, rather than a distribution over a large number of types of defects and is likely found in a wide variety of structures from nano-scale composites to bulk structures as well as in both broad and narrow band materials from dielectrics to semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Defect-mediated relaxation in the random tiling phase of a binary mixture: Birth, death and mobility of an atomic zipper

This paper describes the mechanism of defect-mediated relaxation in a dodecagonal square-triangle random tiling phase exhibited by a simulated binary mixture of soft discs in 2D. We examine the internal transitions within the elementary mobile defect (christened the “zipper”) that allow it to move, as well as the mechanisms by which the zipper is created and annihilated. The structural relaxation of the random tiling phase is quantified and we show that this relaxation is well described by a model based on the distribution of waiting times for each atom to be visited by the diffusing zipper. This system, representing one of the few instances where a well defined mobile defect is capable of structural relaxation, can provide a valuable test case for general theories of relaxation in complex and disordered materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Spin counting in electrically detected magnetic resonance via low-field defect state mixing

The work herein describes a method that allows one to measure paramagnetic defect densities in semiconductor and insulator based devices with electrically detected magnetic resonance (EDMR). The method is based upon the mixing of defect states which results from the dipolar coupling of paramagnetic sites at low magnetic fields. We demonstrate the measurement method with spin dependent tunneling in thin film dielectrics; however, the method should be equally applicable to paramagnetic defect density measurements in semiconductors via the more commonly utilized EDMR technique called spin dependent recombination.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ∼97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Phase-operation for conduction electron by atomic-scale scattering via single point-defect

In order to propose a phase-operation technique for conduction electrons in solid, we have investigated, using scanning tunneling microscopy, an atomic-scale electron-scattering phenomenon on a 2D subband state formed in Si. Particularly, we have noticed a single surface point-defect around which a standing-wave pattern created, and a dispersion of scattering phase-shifts by the defect-potential against electron-energy has been measured. The behavior is well-explained with appropriate scattering parameters: the potential height and radius. This result experimentally proves that the atomic-scale potential scattering via the point defect enables phase-operation for conduction electrons.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects or vacancies

Hexagonal boron nitride (hBN), a remarkable material with a two-dimensional atomic crystal structure, has the potential to fabricate heterostructures with unusual properties. We perform first-principles calculations to determine whether intercalated metal atoms and vacancies can mediate interfacial coupling and influence the structural and electronic properties of the graphene/hBN heterostructure. Metal impurity atoms (Li, K, Cr, Mn, Co, and Cu), acting as extrinsic defects between the graphene and hBN sheets, produce n-doped graphene. We also consider intrinsic vacancy defects and find that a boron monovacancy in hBN acts as a magnetic dopant for graphene, whereas a nitrogen monovacancy in hBN serves as a nonmagnetic dopant for graphene. In contrast, the smallest triangular vacancy defects in hBN are unlikely to result in significant changes in the electronic transport of graphene. Our findings reveal that a hBN layer with some vacancies or metal impurities enhances the interlayer coupling in the graphene/hBN heterostructure with respect to charge doping and electron scattering.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗