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At least 1,513 records · Page 84

Interfacial nucleation behavior of inkjet-printed 6,13 bis(tri-isopropylsilylethynyl) pentacene on dielectric surfaces

The performance of organic thin film transistors (OTFTs) is heavily dependent on the interface property between the organic semiconductor and the dielectric substrate. Device fabrication with bottom-gate architecture by depositing the semiconductors with a solution method is highly recommended for cost-effectiveness. Surface modification of the dielectric layer is employed as an effective approach to control film growth. Here, we perform surface modification via a self-assembled monolayer of silanes, a spin-coated polymer layer or UV-ozone cleaning, to prepare surfaces with different surface polarities and morphologies. The semiconductor is inkjet-printed on the surface-treated substrates as single-line films with overlapping drop assignment. Surface morphologies of the dielectric before film deposition and film morphologies of the inkjet-printed semiconductor are characterized with polarized microscopy and AFM. Electrical properties of the films are studied through organic thin-film transistors with bottom-gate/bottom-contact structure. With reduced surface polarity and nanoscale aggregation of silane molecules on the substrates, semiconductor nucleates from the interior interface between the ink solution and the substrate, which contributes to film growth with higher crystal coverage and better film quality at the interface. Surface treatment with hydrophobic silanes is a promising approach to fabrication of high performance OTFTs with nonpolar conjugated molecules via solution methods.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Chemical Passivation of Crystalline Si by Al 2 O 3 Deposited Using Atomic Layer Deposition: Implications for Solar Cells

The atomistic-level mechanism for the chemical passivation of the monocrystalline Si (c-Si) surface with thermally annealed Al 2 O 3 was studied using in situ infrared spectroscopy and photoconductance decay measurements. Al 2 O 3 was deposited on high-lifetime, float-zone c-Si substrates using atomic layer deposition (ALD) from trimethylaluminum (TMA), and H 2 O or O 3 . Surface-sensitive attenuated total reflection Fourier transform infrared spectroscopy was used to monitor the c-Si/Al 2 O 3 interface, as well as the bulk of the Al 2 O 3 film during the entire process. Our results show that some surface Si–H bonds are preserved after the ALD of Al 2 O 3 on H-terminated Si. During the annealing step at 400 °C, restructuring occurs at the c-Si/Al 2 O 3 interface to form interfacial SiO x . Isotope labeling was used to differentiate interfacial SiD bonds on the c-Si surface from H incorporated in Al 2 O 3 . Within the sensitivity of our infrared setup (~10 13 cm –2 ), we did not observe any net migration of atomic H or D from Al 2 O 3 to the c-Si/Al 2 O 3 interface. To isolate the effects of chemical and field-effect passivation of Al 2 O 3 thin films, we carried out surface passivation studies on c-Si/SiO 2 /Al 2 O 3 stacks. We also annealed these stacks in different atmospheres to test the influence of annealing atmospheres on the chemical passivation of c-Si by Al 2 O 3 and observed that O 2 -containing atmosphere led to the best surface chemical passivation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Design of Atomically Precise Nanoscale Negative Differential Resistance Devices

Downscaling device dimensions to the nanometer range raises significant challenges to traditional device design, due to potential current leakage across nanoscale dimensions and the need to maintain reproducibility while dealing with atomic–scale components. Here, negative differential resistance (NDR) devices based on atomically precise graphene nanoribbons are investigated. The computational evaluation of the traditional double–barrier resonant–tunneling diode NDR structure uncovers important issues at the atomic scale, concerning the need to minimize the tunneling current between the leads while achieving high peak current. A new device structure consisting of multiple short segments that enables high current by the alignment of electronic levels across the segments while enlarging the tunneling distance between the leads is proposed. The proposed structure can be built with atomic precision using a scanning tunneling microscope (STM) tip during an intermediate stage in the synthesis of an armchair nanoribbon. An experimental evaluation of the band alignment at the interfaces and an STM image of the fabricated active part of the device are also presented. In conclusion, this combined theoretical–experimental approach opens a new avenue for the design of nanoscale devices with atomic precision.

42 ENGINEERING↗

Understanding Automotive Exhaust Catalysts Using a Surface Science Approach: Model NOx Storage Materials

The structure-reactivity relationships of model BaO-based NOx storage/reduction catalysts were investigated under well controlled experimental conditions using surface science analysis techniques. The reactivity of BaO toward NO2, CO2, and H2O was studied as a function of BaO layer thickness [0\hBaO\30 monolayer (ML)], sample temperature, reactant partial pressure, and the nature of the substrate the NOx storage material was deposited onto. Most of the efforts focused on understanding the mechanism of NO2 storage either on pure BaO, or on BaO exposed to CO2 or H2O prior to NO2 exposure. The interaction of NO2 with a pure BaO film results in the initial formation of nitrite/nitrate ion pairs by a cooperative adsorption mechanism predicted by prior theoretical calculations. The nitrites are then further oxidized to nitrates to produce a fully nitrated surface. The mechanism of NO2 uptake on thin BaO films (\4 ML), BaO clusters (\1 ML) and mixed BaO/Al2O3 layers are fundamentally different: in these systems initially nitrites are formed only, and then converted to nitrates at longer NO2 exposure times. These results clarify the contradicting mechanisms presented in prior studies in the literature. After the formation of a nitrate layer the further conversion of the underlying BaO is slow, and strongly depends on both the sample temperature and the NO2 partial pressure. At 300 K sample temperature amorphous Ba(NO3)2 forms that then can be converted to crystalline nitrates at elevated temperatures. The reaction between BaO and H2O is facile, a series of Ba(OH)2 phases form under the temperature and H2O partial pressure regimes studied. Both amorphous and crystalline Ba(OH)2 phases react with NO2, and initially form nitrites only that can be converted to nitrates. The NO2 adsorption capacities of BaO and Ba(OH)2 are identical, i.e., both of these phases can completely be converted to Ba(NO3)2. In contrast, the interaction of CO2 with pure BaO results in the formation of a BaCO3 layer that prevents to complete carbonation of the entire BaO film under the experimental conditions applied in these studies. However, these ‘‘carbonated’’ BaO layers readily react with NO2, and at elevated sample temperature even the carbonate layer is converted to nitrates. The importance of the metal oxide/metal interface in the chemistry on NOx storage-reduction catalysts was studied on BaO(\1 ML)/Pt(111) reverse model catalysts. In comparison to the clean Pt(111), new oxygen adsorption phases were identified on the BaO/Pt(111) surface that can be associated with oxygen atoms strongly adsorbed on Pt atoms at the peripheries of BaO particles. A simple kinetic model developed helped explain the observed thermal desorption results. The role of the oxide/metal interface in the reduction of Ba(NO3)2 was also substantiated in experiments where Ba(NO3)2/O/Pt(111) samples were exposed to CO at elevated sample temperature. The catalytic decomposition of the nitrate phase occurred as soon as metal sites opened up by the removal of interfacial oxygen via CO oxidation from the O/Pt(111) surface. The temperature for catalytic nitrate reduction was found to be significantly lower than the onset temperature of thermal nitrate decomposition. We gratefully acknowledge the US Department of Energy (DOE), Office of Science, Division of Chemical Sciences, Geosciences, and Biosciences for the support of this work. The research described in this paper was performed at the Environmental Molecular Sciences Laboratory (EMSL), a national user facility sponsored by the DOE Office of Biological and Environmental Research and located at the Pacific Northwest National Laboratory (PNNL). PNNL is operated for the US DOE by Battelle under contract number DE-AC05-76RL01830.

Environmental Molecular Sciences Laboratory↗

The Impacts of Cation Stoichiometry and Substrate Surface Quality on Nucleation, Structure, Defect Formation, and Intermixing in Complex Oxide Heteroepitaxy–LaCrO3 on SrTiO3(001)

Our ability to design and fabricate electronic devices with reproducible properties using complex oxides is critically dependent on our ability to controllably synthesize these materials in thin-film form. Structure-property relationships are intimately tied to film and interface composition. Here we report on the effects of cation stoichiometry in LaCrO3 heteroepitaxial films prepared using molecular beam epitaxy. We show that LaCrO3 films grow pseudomorphically on SrTiO3(001) over an wide range of La-to-Cr atom ratios. However, the growth mode and structural quality are sensitive to the La-to-Cr ratio, with La-rich films being of considerably lower structural quality than Cr-rich films. Cation mixing occurs at the interface for all La-to-Cr ratios investigated, and is not quenched by deposition at ambient temperature. Indiffused La atoms occupy Sr sites in the substrate. The presence of defects in the SrTiO3 substrate is implicated in promoting La indiffusion by comparing the properties of LaCrO3/SrTiO3 with those of LaCrO3/Si, both prepared at ambient temperature. Additionally, pulsed laser deposition is shown to result in more extensive interfacial mixing than molecular beam epitaxy for deposition at ambient temperature on Si.

Environmental Molecular Sciences Laboratory↗

Interfacial Stabilization of Metastable TiO 2 Films

This work demonstrates a phenomenon that preserves the traditionally metastable anatase crystal structure of thin titania (TiO 2 ) films along a two-dimensional oxide interface at temperatures well in excess of those that normally trigger a full polymorphic transformation to rutile in higher dimensionality crystalline powders. Whereas atomic surface mobility appears to dominate polymorph transformation processes within bulk TiO 2 powders, a simple reduction in dimensionality to a two-dimensional TiO 2 film (ca. 50–200 nm thick), supported upon a substrate, leads to a remarkable resistance to the calcination-induced anatase-to-rutile transformation. This stabilization does not appear to be specifically reliant on substrate character given its persistence for TiO 2 films prepared on amorphous silica (SiO 2 ) as well as crystalline TiO 2 substrates. Instead, interface-mediated coordination of the TiO 2 film with the substrate, and the inherent confinement of crystallites in two dimensions, is believed to resist polymorph transformation by mitigation of the atomic surface mobility. Furthermore, only when temperatures (i.e., >800 °C) that are conducive to bulk atomic mobilization are reached does reconstructive grain growth convert the film into the thermodynamically stable rutile crystal structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Impact of Interfacial Structure on Heterogeneous Nucleation of Amorphous Carbonates

For this work, classical molecular dynamics simulations were performed to provide physical insight into the impact of interfacial structure on the heterogeneous nucleation of amorphous calcium carbonate (ACC, CaCO 3 ·H 2 O) and amorphous magnesium carbonate (AMC, MgCO 3 ·H 2 O) by using α-quartz as a model substrate. Interfacial structure and energies were computed for ACC and AMC in contact with the (100), (001), and (101) α-quartz surfaces. The simulations showed α-quartz surfaces drew water molecules out of the carbonate nuclei to form a partial hydration layer. The formation of a partial hydration layer and its disruption to the ACC/AMC structure meant the α-quartz–ACC/AMC interfaces were not energetically favored relative to separate α-quartz–water and ACC/AMC–water interfaces and, thus, homogeneous ACC/AMC nucleation was favored over heterogeneous nucleation. The CMD simulations hence provided an atomic-level explanation for a reported nonclassical growth mechanism whereby carbonate minerals grow via homogeneous nucleation and subsequent surface attachment of amorphous intermediates.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Collaborative atomic-scale design, analysis, and nanofabrication for record breaking, single-crystal Zn(x)Cd(1-x)Te solar cell arrays

Cadmium telluride (CdTe) based photovoltaics provide a viable solar energy solution because of their short payback time, low manufacturing cost, and high theoretical efficiency ~29%. However, the highest record laboratory efficiency is only 22.1% and long-term performance degradation is ~1 % per year which hinders greater economic viability. Higher open circuit voltage (Voc) and fill factor (FF) are needed to increase the efficiency of the solar cell. Cells with record energy conversion efficiencies report short current (Jsc) values close to their theoretical maximum. However, Voc and FF in these devices remain well below their anticipated optimum. These electrical parameters depend on the quality of the various layers in the solar cell. In particular they depend on the crystalline quality including the defect and impurity concentrations. Therefore understanding how defects and impurities form and evolve in the material layers is important to design devices with higher efficiency and stability. The aim of this project is to create a novel path around the fundamental barriers to achieve high open-circuit voltages (VOC ≥ 1.0 V) in CdTe/CdS solar cells. The idea of the project was to combine nanopatterned crystal growth and alloy compositional grading (with concomitant lattice parameter and energy band gap grading) to reduce the defect density and dramatically improve spatial uniformity of ZnxCd(1-x)Te/CdS cells. The lattice mismatch between ZnTe and CdS is 3.9% compared to a much larger 9.2% between CdTe and CdS. Importantly, when crystal growth is contained to the nanoscale, the strain in each layer is reduced by a factor of two due to strain partitioning and 3D strain relief mechanisms that come into play. This reduces the strain in the ZnTe from 3.9% to 1.95% which is within the range of metamorphic crystal growth. In preliminary studies, molecular dynamics simulation of ZnTe/CdS islands predicted dislocation-free material when the patterning was reduced to ~80 nm in diameter. The energy band gap of ZnxCd(1-x)Te is also graded in conjunction with alloy composition. ZnTe has an energy band gap of 2.3 eV. Finally, an added benefit of patterned growth is that it enables direct one-to-one study of the relationships between fabrication, microstructure and performance of individual crystal grains within the array. Experimental characterization techniques such as atomic probe tomography (APT) and transmission electron microscopy (TEM) have elucidated much about the microstructure of the layers. However, the techniques are destructive, costly and have limitations on the information they convey. For example, TEM gives information with atomic scale resolution but on 2-dimensional substrates. On the other hand, APT gives 3-dimensional information but is not able to resolve atomic scale structure. Alternatively, Molecular Dynamics (MD) simulations offer a solution to rapidly generate time-resolved, 3-dimensional, atomic scale structures of crystal growth. Direct MD simulations of microstructures of Cu-doped II-VI compound multilayers can impact the research on CdTe/CdS solar cells. Such MD simulations require an interatomic potential database that includes at least four elements Cu, Cd, Te, and S. The Stillinger-Weber (SW) potential is the most widely used interatomic potential for semiconductors. However, while SW potentials have been developed for Ga-In-As-Se-Te, Al-Ga-In-P-As-Sb, Cd-Te-Zn-As-Si, In-Ga-N systems, no potentials existed to simulate Cd-Zn-Hg-Se-S-Te-Cu. The goal of this effort was to fill the knowledge gap by developing a Zn-Cd-Hg-S-Se-Te-Cu SW potential database to enable MD simulations of microstructures of Cu-doped CdTe/CdS solar cells. The new potential was then applied, via MD crystal growth simulations, to study the growth mechanisms and atomic structures of the ZnTe/Cu/CdTe/CdS multilayers under various conditions. The objective of the project was to inform the solar cell community on crystal growth and defect formation at the interface between CdTe-based epilayers grown on CdS substrates. MD simulations offered a unique opportunity to analyze the 3-dimensional crystal growth evolution of Cu doped ZnxCd(1-x)TeyS(1-y) alloys with atomic scale resolution under a variety of conditions. The effect of substrate orientation and polycrystallinity on crystal growth was studied. Substrates with grain boundaries were created and the growth evolution on these substrates were analyzed. Another focus was to elucidate the effect of dopant incorporation on the nature of polycrystallinity crystal growth. Dopants available through the Stillinger-Weber potential developed in this project included Cu, Zn, S, Se, Hg and native vacancies.

14 SOLAR ENERGY↗

Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it offers the possibility to obtain various graphene structures on the Si-face depending on growth conditions. The different structures include the (6{radical}3 Multiplication-Sign 6{radical}3)-R30 Degree-Sign reconstruction of the graphene/SiC interface, which is commonly observed on the Si-face, but also the rotational disorder which is generally observed on the C-face. In this work, growth mechanisms leading to the formation of the different structures are studied and discussed. For that purpose, we have grown graphene on SiC(0001) (Si-face) using propane-hydrogen CVD at various pressure and temperature and studied these samples extensively by means of low energy electron diffraction and atomic force microscopy. Pressure and temperature conditions leading to the formation of the different structures are identified and plotted in a pressure-temperature diagram. This diagram, together with other characterizations (X-ray photoemission and scanning tunneling microscopy), is the basis of further discussions on the carbon supply mechanisms and on the kinetics effects. The entire work underlines the important role of hydrogen during growth and its effects on the final graphene structure.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures

Ion irradiation induced crystallization in as-deposited amorphous SiC films is investigated using grazing-angle incidence x-ray diffraction (GIXRD), transmission electron microscopy (TEM) and Raman spectroscopy. Irradiation with 5 MeV Xe to fluence of 115 Xe/nm2 at 700 K results in a homogenous distribution of 3C-SiC grains with an average crystallite size of ~5.7 nm over the entire film thickness (~1 µm). The nucleation and growth processes exhibit a weak dependence on dose in displacements per atom (dpa) in the dose range from 6 to 20 dpa. A transformation of homonuclear C-C bonds from sp3 to sp2 hybridization is observed in the irradiated films, which may be partly responsible for the observed grain size saturation. The results from this study may have a significant impact on synthesis of nanograins in amorphous SiC and other similar materials with effective control of grain size and density by ion irradiation.

phase transformation, SiC, ion irradiation↗

Band alignment of ZnO/multilayer MoS{sub 2} interface determined by x-ray photoelectron spectroscopy

The energy band alignment between ZnO and multilayer (ML)-MoS{sub 2} was characterized using high-resolution x-ray photoelectron spectroscopy. The ZnO film was deposited using an atomic layer deposition tool, and ML-MoS{sub 2} was grown by chemical vapor deposition. A valence band offset (VBO) of 3.32 eV and a conduction band offset (CBO) of 1.12 eV were obtained for the ZnO/ML-MoS{sub 2} interface without any treatment. With CHF{sub 3} plasma treatment, a VBO and a CBO across the ZnO/ML-MoS{sub 2} interface were found to be 3.54 eV and 1.34 eV, respectively. With the CHF{sub 3} plasma treatment, the band alignment of the ZnO/ML-MoS{sub 2} interface has been changed from type II or staggered band alignment to type III or misaligned one, which favors the electron-hole pair separation. The band alignment difference is believed to be dominated by the down-shift in the core level of Zn 2p or the interface dipoles, which is caused by the interfacial layer rich in F.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Exchange bias effect in epitaxial La{sub 0.67}Ca{sub 0.33}MnO{sub 3}/SrMnO{sub 3} thin film structure

Bilayers consisting of La{sub 0.67}Ca{sub 0.33}MnO{sub 3} (LCMO) and SrMnO{sub 3} (SMO) have been prepared by pulsed-laser deposition on SrTiO{sub 3} (001) substrates. Unconventional magnetic coupling was found after cooling in a small field. The LCMO/SMO bilayers exhibit an exchange bias field of 209 Oe, which vanishes as the temperature rises above 90 K. A small magnetization has been found above the Curie temperature of the pure LCMO thin films. Spin-cluster-like antiferromagnetic (AFM)/ferromagnetic (FM) clusters have been deduced to exist at the interface due to the competing types of magnetic order at the interface. The magnetic relaxation is found to follow a double-exponential equation and a slow relaxation process is observed due to the strong exchange coupling between AFM/FM clusters and the LCMO layer. We speculate that the short-range high-temperature FM order of the Mn{sup 3+} and Mn{sup 4+} moments above the Curie temperature at the interface gives rise to the magnetic regions that pin the FM LCMO layer as the temperature decreases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Rotation of Crystal Seed During Early Stages of Growth Reveals the Anisotropy of Glass Matrix

Glass-ceramics are a highly valuable class of materials that are needed for realizing many high-tech as well as consumer products. They are made by controlling crystallization of glass. Theoretical atomistic insights obtained using molecular dynamics simulations in this work reveal that crystal seeds can spontaneously rotate within glass at high temperatures due to anisotropic forces at the glass-crystal interface. This rotation challenges the long‐held view of glass as isotropic solid, and highlights how atomic‐scale inhomogeneities influence crystal growth and microstructure, hence the physical properties glass‐ceramics.

36 MATERIALS SCIENCE↗

Phase transformations at interfaces: Observations from atomistic modeling

Here, we review the recent progress in theoretical understanding and atomistic computer simulations of phase transformations in materials interfaces, focusing on grain boundaries (GBs) in metallic systems. Recently developed simulation approaches enable the search and structural characterization of GB phases in single-component metals and binary alloys, calculation of thermodynamic properties of individual GB phases, and modeling of the effect of the GB phase transformations on GB kinetics. Atomistic simulations demonstrate that the GB transformations can be induced by varying the temperature, loading the GB with point defects, or varying the amount of solute segregation. The atomic-level understanding obtained from such simulations can provide input for further development of thermodynamics theories and continuous models of interface phase transformations while simultaneously serving as a testing ground for validation of theories and models. They can also help interpret and guide experimental work in this field.

36 MATERIALS SCIENCE↗

In-situ TEM analysis of the phase transformation mechanism of a Cu–Al–Ni shape memory alloy

We report that minimizing phase transformation (PT) hysteresis is of crucial importance for reliability of shape memory alloy (SMA)-based devices, where the lattice strain/stress caused by thermal hysteresis leads to functional degradation. As a result, understanding structural factors that control PT pathway is critical for development of materials with high reversibility. In this study, two distinct PT mechanisms (from γ$'\atop{1}$ martensite to β 1 austenite phase) in Cu–Al–Ni SMAs were revealed by in-situ TEM observation. A growth-dominant conventional PT mechanism shows in the fast quench sample, whereas a nucleation-dominant PT mechanism that suppresses interface propagation and induces high thermal hysteresis displays in the slow quench sample. By characterizing the atomic scale composition and microstructure we discover that slow quenching induces nanoprecipitation that changes chemistry of the matrix alloy, which in turn causes the higher PT hysteresis and temperature, while fast quenching avoids the formation of these nanoprecipitates. Lastly, our finding provides valuable insights into the fabrication of SMAs with better reliability.

36 MATERIALS SCIENCE↗

Structure evolution and tin redistribution during oxidation of Zircaloy-4 at 500°C

Zirconium (Zr) alloys are widely used as fuel cladding in nuclear power reactors due to their thermal stability, mechanical durability, corrosion resistance, and low neutron absorption cross-section. However, their performance is challenged by oxidation in reactor environments, making the study of Zr alloy corrosion behavior crucial for ensuring the safety, longevity, and economic viability of nuclear power systems. While the oxidation behavior of Zr-based cladding materials has been extensively studied since the 1950s, a mechanistic understanding into the relationship between structure evolution, solute element redistribution, and properties remains elusive. Valuable insights may be obtained through advanced experimental methods, such as in-situ and high resolution microscopy techniques. Here, in this study, the oxidation behavior of Zircaloy-4 at 500 °C in O 2 is characterized using a multimodal advanced characterization approach. Using in-situ X-ray diffraction, the phase evolution from metastable to stable oxides is tracked in real time. Complementary high-resolution techniques, including electron microscopy and atom probe tomography, reveal nanoscale insights into the microstructural changes and solute redistribution across the oxide/metal interface. Nanohardness mapping across the oxide/metal interface highlights localized mechanical property variations that may be linked to changes in microstructure and crystal structure within the oxide layer. These findings offer valuable insights into the microstructure and property evolution of Zircaloy-4 during oxidation, contributing to a better understanding of microstructural changes in Zr-based alloys under oxidative environments.

APT↗

The 3.5-Å CryoEM Structure of Nanodisc-Reconstituted Yeast Vacuolar ATPase V o Proton Channel

The molecular mechanism of transmembrane proton translocation in rotary motor ATPases is not fully understood. Here in this paper, we report the 3.5-Å resolution cryoEM structure of the lipid nanodisc-reconstituted V o proton channel of the yeast vacuolar H + -ATPase, captured in a physiologically relevant, autoinhibited state. The resulting atomic model provides structural detail for the amino acids that constitute the proton pathway at the interface of the proteolipid ring and subunit a. Based on the structure and previous mutagenesis studies, we propose the chemical basis of transmembrane proton transport. Moreover, we discovered that the C terminus of the assembly factor Voa1 is an integral component of mature V o . Voa1’s C-terminal transmembrane α helix is bound inside the proteolipid ring, where it contributes to the stability of the complex. Our structure rationalizes possible mechanisms by which mutations in human V o can result in disease phenotypes and may thus provide new avenues for therapeutic interventions.

59 BASIC BIOLOGICAL SCIENCES↗

Understanding the nanoscale redox-behavior of iron-anodes for rechargeable iron-air batteries

Iron-air cells provide a promising and resource-efficient alternative battery concept with superior area specific power density characteristics compared to state-of-the-art Li-air batteries and potentially superior energy density characteristics compared to present Li-ion batteries. Understanding charge-transfer reactions at the anode-electrolyte interface is the key to develop high-performance cells. By employing in-situ electrochemical atomic force microscopy (in-situ EC-AFM), in-depth insight into the electrochemically induced surface reaction processes on iron in concentrated alkaline electrolyte is obtained. The results highlight the formation and growth of the redox-layer on iron over the course of several oxidation/reduction cycles. By this means, a direct correlation between topography changes and the corresponding electrochemical reactions at the nanoscale could unambiguously be established. Here in this paper, the twofold character of the nanoparticulate redox-layer in terms of its passivating character and its contribution to the electrochemical reactions is elucidated. Furthermore, the evolution of single nanoparticles on the iron electrode surface is evaluated in unprecedented and artifact-free detail. Based on the dedicated topography analysis, a detailed structural model for the evolution of the redox-layer which is likewise elementary for corrosion science and battery research is derived.

25 ENERGY STORAGE↗