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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,495 records · Page 83
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Colliding Pulse Mode Locking and Nonequilibrium Carrier Dynamics within Vertical External-Cavity Surface-Emitting Lasers

The complex nonlinear dynamics of colliding counterpropagating ultrashort laser pulses circulating in a vertical external-cavity surface-emitting ring laser cavity are captured by a first-principles quantum-mechanical microscopic model coupled to an intracavity beam propagator. Furthermore, our numerical simulations establish that overall mode locking stability is sensitive to relative phases and delays of the pulses impinging on the semiconductor saturable absorber mirror. Delay offsets of the counterpropagating pulses lead to asymmetric carrier recovery and instability, often leading in turn to single unidirectional circulating pulses. Although computationally challenging, we also include transverse effects and show that the influence of interference patterns from spatial gratings written by the counterpropagating pulses is significant in stabilizing the modelocked pulses.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Vertical temperature boundary of the pseudogap under the superconducting dome in the phase diagram of Bi 2 Sr 2 CaCu 2 O 8 + δ

We combine electronic Raman scattering experiments with cellular dynamical mean field theory and present evidence of the pseudogap in the superconducting state of various hole-doped cuprates. In Bi 2 Sr 2 CaCu 2 O 8 + δ we also track the superconducting pseudogap hallmark, a peak-dip feature, as a function of temperature T and doping p , well beyond the optimal one. We show that, at all temperatures under the superconducting dome, the pseudogap disappears at the doping p c , between 0.222 and 0.226, where also the normal-state pseudogap collapses at a Lifshitz transition. This demonstrates that the superconducting pseudogap boundary forms a vertical line in the T - p phase diagram.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Mutual influence between macrospin reversal order and spin-wave dynamics in isolated artificial spin-ice vertices

In this paper, we theoretically and experimentally investigate magnetization reversal and associated spin-wave dynamics of isolated threefold vertices that constitute a Kagome lattice. The three permalloy macrospins making up the vertex have an elliptical cross section and a uniform thickness. We study the dc magnetization curve and the frequency versus field curves (dispersions) of those spin-wave modes that produce the largest response. We also investigate each macrospin reversal from a dynamic perspective, by performing micromagnetic simulations of the reversal processes, and revealing their relationships to the soft-mode profile calculated at the equilibrium state immediately before reversal. The theoretical results are compared with the measured magnetization curves and ferromagnetic resonance spectra. Finally, the agreement achieved suggests that a much deeper understanding of magnetization reversal and accompanying hysteresis can be achieved by combining theoretical calculations with static and dynamic magnetization experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Designing Ta C Virtual Substrates for Vertical Al x Ga 1 − x N Power Electronics Devices

Power electronics are critical for a sustainable energy future, playing a key role in electrification and integration of renewable energy sources into the grid. Advances in ultrawide band gap materials are needed to handle higher powers in smaller form factors while reducing electrical and thermal losses. High Al content Al x Ga 1 − x N is theoretically capable of meeting these demands, but its impact in power electronics has been severely restricted by a lack of substrates that can satisfy conductivity, lattice matching, and/or thermal expansion requirements. We demonstrate that electrically conductive Ta C can be used as a virtual substrate for Al x Ga 1 − x N heteroepitaxy. Scaleably sputtered Ta C grown on Al 2 O 3 , followed by high-temperature face-to-face annealing, produces a thin film Ta C template with an effective hexagonal lattice constant matched to Al 0.70 Ga 0.30 N . Annealing of the Ta C promotes recrystallization, significantly improving crystallinity and reducing crystalline defects from as-deposited columnar grains to a step-and-terrace surface morphology, enabling the subsequent growth of high-quality Al 0.70 Ga 0.30 N by molecular beam epitaxy. X-ray diffraction and scanning transmission electron microscopy confirm that the Al x Ga 1 − x N layer is heteroepitaxially aligned, strain-free, and lattice-matched, transitioning abruptly from Ta C to Al x Ga 1 − x N without intermediate phases. These results demonstrate Ta C virtual substrates as electrically conductive, lattice-matched, and thermally compatible templates for vertical Al x Ga 1 − x N devices that can meet the growing power needs of a sustainable energy future. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
DOE OSTI2021

Extending synchrotron SAXS instrument ranges through addition of a portable, inexpensive USAXS module with vertical rotation axes

Ultra-SAXS can enhance the capabilities of existing synchrotron SAXS/WAXS beamlines. A compact ultra-SAXS module has been developed, which extends the measurable q -range with 0.0015 ≤ q (nm −1 ) ≤ 0.2, allowing structural dimensions in the range 30 ≤ D (nm) ≤ 4000 to be probed in addition to the range covered by a high-end SAXS/WAXS instrument. By shifting the module components in and out on their respective motor stages, SAXS/WAXS measurements can be easily and rapidly interleaved with USAXS measurements. The use of vertical crystal rotation axes (horizontal diffraction) greatly simplifies the construction, at minimal cost to efficiency. In this paper, the design considerations, realization and synchrotron findings are presented. Measurements of silica spheres, an alumina membrane, and a porous carbon catalyst are provided as application examples.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness

We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga 2 O 3 . The device features 1.8 μm wide, 2×10 17 cm -3 doped n-Ga 2 O 3 pillars wrapped by the charge-balanced p-type nickel oxide (NiO). The sidewall NiO is sputtered through a novel self-align process. Benefited from the high doping in Ga 2 O 3 , the superjunction Schottky barrier diode (SJ-SBD) achieves a ultra-low specific on-resistance (R ON,SP ) of 0.7 mΩ•cm 2 with a low turn-on voltage of 1 V and high breakdown voltage (BV) of 2000 V. The R ON,SP ~BV trade-off is among the best in all WBG and UWBG power SBDs. The device also shows good thermal stability with BV > 1.8 kV at 175 °C. In the unclamped inductive switching tests, the device shows a dynamic BV of 2.2 kV and no degradation under 1.7 kV repetitive switching, verifying the fast acceptor depletion in NiO under dynamic switching. Such high-temperature and switching robustness are reported for the first time in a heterogeneous superjunction. These results show the great potential of UWBG superjunction power devices.

Qin, Yuan↗
DOE OSTI2016

Threshold Switching Characteristics of Nb/NbO 2 /TiN Vertical Devices

Nb/NbO2/TiN vertical structures were synthesized in-situ and patterned to devices with different contact areas. The devices exhibited threshold resistive switching with minimal hysteresis and a small EThreshold (60~90 kV/cm). The switching behavior was unipolar, and demonstrated good repeatability. A less sharp but still sizable change in the device resistance was observed up to 150 °C. It was found that the resistive switching without Nb capping layer exhibited the hysteretic behavior and much larger EThreshold (~250 kV/cm) likely due to a 2-3 nm surface Nb2O5 layer. The stable threshold switching behavior well above room temperature shows the potential applications of this device as an electronic switch.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2016

In-Operando Spatial Imaging of Edge Termination Electric Fields in GaN Vertical p-n Junction Diodes

Control of electric fields with edge terminations is critical to maximize the performance of high-power electronic devices. We proposed a variety of edge termination designs which makes the optimization of such designs challenging due to many parameters that impact their effectiveness. And while modeling has recently allowed new insight into the detailed workings of edge terminations, the experimental verification of the design effectiveness is usually done through indirect means, such as the impact on breakdown voltages. In this letter, we use scanning photocurrent microscopy to spatially map the electric fields in vertical GaN p-n junction diodes in operando. We also reveal the complex behavior of seemingly simple edge termination designs, and show how the device breakdown voltage correlates with the electric field behavior. Modeling suggests that an incomplete compensation of the p-type layer in the edge termination creates a bilayer structure that leads to these effects, with variations that significantly impact the breakdown voltage.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2017

Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes

Devices based on GaN have shown great promise for high power electronics, including their potential use as radiation tolerant components. An important step to realizing high power diodes is the design and implementation of an edge termination to mitigate field crowding, which can lead to premature breakdown. However, little is known about the effects of radiation on edge termination functionality. We experimentally examine the effects of proton irradiation on multiple field ring edge terminations in high power vertical GaN pin diodes using in operando imaging with electron beam induced current (EBIC). We find that exposure to proton irradiation influences field spreading in the edge termination as well as carrier transport near the anode. By using depth-dependent EBIC measurements of hole diffusion length in homoepitaxial n-GaN we demonstrate that the carrier transport effect is due to a reduction in hole diffusion length following proton irradiation.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2018

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

This letter reports the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk GaN substrates using metalorganic chemical vapor deposition. The device with a 9-μm-thick drift layer exhibited a high breakdown voltage (V bd ) of 1.57 kV, a low ON-resistance (R ON ) of 0.45 mQ · cm 2 (or 0.70 mQ · cm 2 with current spreading considered) and a high Baliga's figure-of-merit (V $2\atop{bd}$/R ON ) of 5.5 GW/cm 2 (or 3.6 GW/cm 2 ) without passivation or field plate, which are close to the theoretical limit of GaN. This technique enabled a significant reduction in leakage current (~10 6 times at -300 V) and a huge enhancement in V bd (from ~300 V to 1.57 kV). Furthermore, the device showed good forward characteristics with a turn-ON voltage of 3.5 V, an ON-current of ~2 kA/cm 2 (or 1.3 kA/cm 2 ), an ON/OFF ratio of -10 9 , and an ideality factor of 1.4. This work shows the HPET can serve as an effective, low cost, and easy-to-implement edge termination technique for high voltage and high power GaN p-n power diodes.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical $p-n$ Diodes With High Temperature Stability

This letter reports the observation of threshold switching and memory behaviors of epitaxially regrown GaN-on-GaN vertical p-n diodes. This mechanism was ascribed to the conductive path formed by traps in the insulating layer at the regrowth interface after soft breakdown. The device can reliably switch more than 1000 cycles at both room temperature and 300 °C with small fluctuation on the set and reset voltage. The set voltage increased with the increasing temperature due to the enhanced thermal detrapping effect that made it harder to form conductive path at high temperatures. Besides, the device showed memory behaviors when the reset voltage was higher than 4.4 V. This letter can serve as an important reference to further developing GaN-based memory devices and integrated circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Enhancing Cyber Resilience of Networked Microgrids using Vertical Federated Reinforcement Learning

This paper presents a novel federated reinforcement learning (Fed-RL) methodology to inject sufficient resiliency into the operations of the network of microgrids. We consider adversarial actions to the voltage and power control loop reference signals at the grid forming (GFM) inverters in the microgrids which are essential to integrate renewable resources. Therefore, we formulate a resilient reinforcement learning training setup that uses these adversarial injections to generate episodic trajectories and train the RL agents to alleviate their impact on performance. To circumvent the concerns about data-sharing and privacy for different owners of the microgrids in the networked setting, we bring in the aspects of the federated operation to propose novel Fed-RL algorithms. As the dynamics of each microgrid are coupled due to electrical interlinks, the conventional federated RL approaches using decoupled independent environments are not applicable, which leads us to propose a multi-agent vertically federated variation of actor-critic algorithms, namely federated soft actor-critic (FedSAC). We have performed numerical simulations on an IEEE 123-bus benchmark test feeder with three microgrids by creating a customized simulation setup by encapsulating the microgrid dynamic simulations in GridLAB-D/HELICS co-simulation platform with the OpenAI Gym environment and validated the proposed resilient and secured learning methodology.

Artificial Intelligence (AI), reinforcement learni↗
DOE OSTI2015

Vertical GaN power diodes with a bilayer edge termination

Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (10 4 - 10 5 cm -2 ) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 10 15 cm -3 . The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type drift region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.

42 ENGINEERING↗
DOE OSTI2026

A Hierarchical Optimization Method for Electric Vertical Takeoff and Landing Aircraft Network Design

Electric vertical takeoff and landing aircraft (eVTOLs) are expected to serve urban air mobility in a station-to-station configuration, which makes the optimal network design of eVTOL stations a critical question to explore. Existing approaches often face limitations, such as the inability to interact station locations with demand or difficulty in finding the optimal solution for large study regions. Here, this paper first proposes a mathematical model to generate optimal eVTOL station locations while considering associated potential eVTOL demand, and then proposes a heuristic algorithm, Hierarchical Optimization MEthod (HOME), to efficiently solve the model. With a case study of Southern California, HOME was compared to 1) directly solving the original integer linear programming-based network design problem, and 2) employing the widely used genetic algorithm. Results suggest that HOME can find optimal solutions with limited computational resources. The proposed framework powered by HOME provides a computationally efficient way to support urban air mobility planning.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Single Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes

Pulsed-laser induced single event current measurements on two geometries of waveguide-integrated germanium photodiodes were conducted over a range of operating voltages to examine the impact of photodiode geometry on the transient response. Vertical PIN photodiodes exhibit transients with a duration that is relatively independent of the operating voltage while the transient duration in lateral PIN photodiodes depends on operating voltage. Furthermore, the experimental measurements facilitate identification of device dimensions that impact the transient response. In this work, these results can be used to identify potential radiation mitigation strategies for photodiodes operating in a radiation environment. Understanding the implications of design choices is critical for designing integrated photonic systems that balance system performance with tolerance for radiation degradation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Transient Photocurrent From High-Voltage Vertical GaN Diodes Irradiated With Electrons: Experiments and Simulations

Radiation-hard high-voltage vertical GaN p-n diodes are being developed for use in power electronics subjected to ionizing radiation. Here, we present a comparison of the measured and simulated photocurrent response of diodes exposed to ionizing irradiation with 70 keV and 20 MeV electrons at dose rates in the range of 1.4x10 7 - 5.0x10 8 rad(GaN)/s. The simulations correctly predict the trend in measured steady-state photocurrent and agree with experimental results within a factor of 2. Furthermore, simulations of the transient photocurrent response to dose rates with uniform and non-uniform ionization depth profiles uncover the physical processes involved that cannot be otherwise experimentally observed due to orders of magnitude larger RC time constant of the test circuit. The simulations were performed using an Exploratory Physics Development code developed at Sandia National Laboratories. The code offers the capability to include defect physics under more general conditions, not included in commercially available software packages, extending the applicability of the simulations to different types of radiation environments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Resilient Control of Networked Microgrids Using Vertical Federated Reinforcement Learning: Designs and Real-Time Test-Bed Validations

Improving system-level resiliency of networked microgrids against adversarial cyber-attacks is an important aspect in the current regime of increased inverter-based resources (IBRs). To achieve that, this paper contributes in designing a hierarchical control layer, in conjunction with the existing control layers, resilient to adversarial attack signals. Considering model complexities, unknown dynamical behaviors of IBRs, and privacy issues regarding data sharing in multi-party-owned microgrids, designing such a control layer is non-trivial. Here, to tackle these issues, a novel federated reinforcement learning (Fed-RL) method is proposed. To grasp the interconnected dynamics of networked microgrids, the paper develops Federated Soft Actor-Critic (FedSAC) algorithm following the vertical structure of implementing Fed-RL. Next, utilizing the OpenAI Gym interface, we built a custom set-up in GridLAB-D/HELICS co-simulation platform, named Resilient RL Co-simulation (ResRLCoSIM), to train the RL agents with IEEE 123-bus benchmark comprising 3 interconnected microgrids. Finally, the learned policies in the simulation are transferred to the real-time hardware-in-the-loop (HIL) test-bed developed using the high-fidelity Hypersim platform. Finally, experiments show that the simulator-trained RL controllers achieve desirable performance with the test-bed platform, validating the minimization of the sim-to-real gap.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2016

A Procedure for Calculating the Vertical Space Height of the Sacrum When Determining Skeletal Height for Use in the Anatomical Method of Adult Stature Estimation

Abstract Estimating stature from skeletonized remains is one of the essential parameters in the development of a biological profile. A new procedure for determining skeletal height ( SKH ) incorporating the vertical space height ( VSH ) from the anterior margin of the sacral promontory to the superior margins of the acetabulae for use in the anatomical method of stature estimation is introduced. Regression equations for stature estimation were generated from measurements of 38 American males of European ancestry from the William M. Bass Donated Skeletal Collection. The modification to the procedure results in a SKH that is highly correlated with stature ( r = 0.925–0.948). Stature estimates have low standard errors of the estimate ranging from 21.79 to 25.95 mm, biases from to 0.50 to 0.94 mm, and accuracy rates from 17.71 mm to 19.45 mm. The procedure for determining the VSH , which replaces “S1 height” in traditional anatomical method models, is a key improvement to the method.

Hayashi, Atsuko↗