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Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy
Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N{sub 2} while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N{sub 2} and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10{sup 16} to 3.8 × 10{sup 19} cm{sup −3} were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10{sup 15} cm{sup −3}. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the dramatically enhanced growth rates demonstrate great promise for the future of III-nitride devices grown by PAMBE.
Adjoint Fokker-Planck equation and runaway electron dynamics
The adjoint Fokker-Planck equation method is applied to study the runaway probability function and the expected slowing-down time for highly relativistic runaway electrons, including the loss of energy due to synchrotron radiation. In direct correspondence to Monte Carlo simulation methods, the runaway probability function has a smooth transition across the runaway separatrix, which can be attributed to effect of the pitch angle scattering term in the kinetic equation. However, for the same numerical accuracy, the adjoint method is more efficient than the Monte Carlo method. The expected slowing-down time gives a novel method to estimate the runaway current decay time in experiments. A new result from this work is that the decay rate of high energy electrons is very slow when E is close to the critical electric field. This effect contributes further to a hysteresis previously found in the runaway electron population.
Exquisite growth control and magnetic properties of yttrium iron garnet thin films
A layer-by-layer epitaxial growth up to 227 atomic layers of ferrimagnetic insulator yttrium iron garnet (YIG) thin films is achieved on (110)-oriented gadolinium gallium garnet substrates using pulsed laser deposition. Atomically smooth terraces are observed on YIG films up to 100 nm in thickness. The root-mean-square roughness is as low as 0.067 nm. The easy-axis lies in the film plane, indicating the dominance of shape anisotropy. For (110)-YIG films, there is well-defined two-fold in-plane anisotropy, with the easiest axis directed along [001]. The Gilbert damping constant is determined to be 1.0 × 10{sup −4} for 100 nm thick films.
View factor modeling of sputter-deposition on micron-scale-architectured surfaces exposed to plasma
The sputter-deposition on surfaces exposed to plasma plays an important role in the erosion behavior and overall performance of a wide range of plasma devices. Plasma models in the low density, low energy plasma regime typically neglect micron-scale surface feature effects on the net sputter yield and erosion rate. The model discussed in this paper captures such surface architecture effects via a computationally efficient view factor model. The model compares well with experimental measurements of argon ion sputter yield from a nickel surface with a triangle wave geometry with peak heights in the hundreds of microns range. Further analysis with the model shows that increasing the surface pitch angle beyond about 45° can lead to significant decreases in the normalized net sputter yield for all simulated ion incident energies (i.e., 75, 100, 200, and 400 eV) for both smooth and roughened surfaces. At higher incident energies, smooth triangular surfaces exhibit a nonmonotonic trend in the normalized net sputter yield with surface pitch angle with a maximum yield above unity over a range of intermediate angles. The resulting increased erosion rate occurs because increased sputter yield due to the local ion incidence angle outweighs increased deposition due to the sputterant angular distribution. The model also compares well with experimentally observed radial expansion of protuberances (measuring tens of microns) in a nano-rod field exposed to an argon beam. The model captures the coalescence of sputterants at the protuberance sites and accurately illustrates the structure's expansion due to deposition from surrounding sputtering surfaces; these capabilities will be used for future studies into more complex surface architectures.
Electron parallel closures for various ion charge numbers
Electron parallel closures for the ion charge number Z = 1 [J.-Y. Ji and E. D. Held, Phys. Plasmas 21, 122116 (2014)] are extended for 1 ≤ Z ≤ 10. Parameters are then computed for various Z with the same form of the Z = 1 kernels adopted. The parameters are smoothly varying in Z and hence can be used to interpolate parameters and closures for noninteger, effective ion charge numbers.
Exploration of the Super H-mode regime on DIII-D and potential advantages for burning plasma devices
A new high pedestal regime (“Super H-mode”) has been predicted and accessed on DIII-D. Super H-mode was first achieved on DIII-D using a quiescent H-mode edge, enabling a smooth trajectory through pedestal parameter space. By exploiting Super H-mode, it has been possible to access high pedestal pressures at high normalized densities. While elimination of Edge localized modes (ELMs) is beneficial for Super H-mode, it may not be a requirement, as recent experiments have maintained high pedestals with ELMs triggered by lithium granule injection. Simulations using TGLF for core transport and the EPED model for the pedestal find that ITER can benefit from the improved performance associated with Super H-mode, with increased values of fusion power and gain possible. Similar studies demonstrate that the Super H-mode pedestal can be advantageous for a steady-state power plant, by providing a path to increasing the bootstrap current while simultaneously reducing the demands on the core physics performance.
Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe
We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.
The DQ and DQΦ electronic structure diabatization methods: Validation for general applications
We recently proposed the dipole-quadrupole (DQ) method for transforming adiabatic electronic states to diabatic states by using matrix elements of the dipole and quadrupole operators, and we applied the method to 3-state diabatizations of LiH and phenol. Here we extend the method to also include the electrostatic potential, and we call the resulting method the DQΦ method, which denotes the dipole–quadrupole–electrostatic-potential diabatization method. The electrostatic potential provides extra flexibility, and the goal of the present work is to test and illustrate the robustness of the methods for producing diabatic potential energy curves that tend to the adiabatic curves away from crossings and avoided crossings and are smooth in regions of crossings and avoided crossings. We illustrate the generality of the methods by an application to LiH with four states and by two-state diabatizations of HCl, (H{sub 2}){sub 2}, O{sub 3}, and the reaction Li + HF → LiF + H. We find that—if enough states are included—the DQ method does not have a significant dependence on the parameter weighting the quadrupole moment, and a geometry-independent value of 10 a{sub 0}{sup −2} is adequate in all cases tested. We also find that the addition of the electrostatic potential improves the diabatic potentials in some cases and provides an additional property useful for increasing the generality of the method for diabatization.
Effect of KOH added to ethylene glycol electrolyte on the self-organization of anodic ZrO{sub 2} nanotubes
ZrO{sub 2} nanotube arrays were formed by anodizing zirconium sheet in ethylene glycol (EG) and EG added to it KOH (EG/KOH) electrolytes. The effect of KOH addition into EG electrolyte to the morphology of nanotubes and their crystallinity was investigated. It was observed that the tubes with diameter of ∼80 nm were formed in EG electrolyte with <0.1 vol % water, but the wall smoothness is rather poor. When KOH was added into EG, the wall smoothness of the nanotubes improve, but the diameter of tubes is smaller (∼40 nm). Despite smoother wall and small tube diameter, the degradation of methyl orange (MO) on the tubes made in EG/KOH is less compared to the tubes made in EG only. This could be due to the less tetragonal ZrO{sub 2} presence in the tubes made in EG/KOH.
Effect of asymmetric concentration profile on thermal conductivity in Ge/SiGe superlattices
The effect of the chemical composition in Si/Ge-based superlattices on their thermal conductivity has been investigated using molecular dynamics simulations. Simulation cells of Ge/SiGe superlattices have been generated with different concentration profiles such that the Si concentration follows a step-like, a tooth-saw, a Gaussian, and a gamma-type function in direction of the heat flux. The step-like and tooth-saw profiles mimic ideally sharp interfaces, whereas Gaussian and gamma-type profiles are smooth functions imitating atomic diffusion at the interface as obtained experimentally. Symmetry effects have been investigated comparing the symmetric profiles of the step-like and the Gaussian function to the asymmetric profiles of the tooth-saw and the gamma-type function. At longer sample length and similar degree of interdiffusion, the thermal conductivity is found to be lower in asymmetric profiles. Furthermore, it is found that with smooth concentration profiles where atomic diffusion at the interface takes place the thermal conductivity is higher compared to systems with atomically sharp concentration profiles.
Multi-scale structures of turbulent magnetic reconnection
We have analyzed data from a series of 3D fully kinetic simulations of turbulent magnetic reconnection with a guide field. A new concept of the guide filed reconnection process has recently been proposed, in which the secondary tearing instability and the resulting formation of oblique, small scale flux ropes largely disturb the structure of the primary reconnection layer and lead to 3D turbulent features [W. Daughton et al., Nat. Phys. 7, 539 (2011)]. In this paper, we further investigate the multi-scale physics in this turbulent, guide field reconnection process by introducing a wave number band-pass filter (k-BPF) technique in which modes for the small scale (less than ion scale) fluctuations and the background large scale (more than ion scale) variations are separately reconstructed from the wave number domain to the spatial domain in the inverse Fourier transform process. Combining with the Fourier based analyses in the wave number domain, we successfully identify spatial and temporal development of the multi-scale structures in the turbulent reconnection process. When considering a strong guide field, the small scale tearing mode and the resulting flux ropes develop over a specific range of oblique angles mainly along the edge of the primary ion scale flux ropes and reconnection separatrix. The rapid merging of these small scale modes leads to a smooth energy spectrum connecting ion and electron scales. When the guide field is sufficiently weak, the background current sheet is strongly kinked and oblique angles for the small scale modes are widely scattered at the kinked regions. Similar approaches handling both the wave number and spatial domains will be applicable to the data from multipoint, high-resolution spacecraft observations such as the NASA magnetospheric multiscale (MMS) mission.
Design of low surface roughness-low residual stress-high optoelectronic merit a-IZO thin films for flexible OLEDs
The development of efficient and reliable large-area flexible optoelectronic devices demands low surface roughness-low residual stress-high optoelectronic merit transparent conducting oxide (TCO) thin films. Here, we correlate surface roughness-residual stress-optoelectronic properties of sputtered amorphous indium zinc oxide (a-IZO) thin films using a statistical design of experiment (DOE) approach and find a common growth space to achieve a smooth surface in a stress-free and high optoelectronic merit a-IZO thin film. The sputtering power, growth pressure, oxygen partial pressure, and RF/(RF+DC) are varied in a two-level system with a full factorial design, and results are used to deconvolve the complex growth space, identifying significant control growth parameters and their possible interactions. The surface roughness of a-IZO thin film varies over 0.19 nm to 3.97 nm, which is not in line with the general assumption of low surface roughness in a-IZO thin films. The initial regression model and analysis of variance reveal no single optimum growth sub-space to achieve low surface roughness (≤0.5 nm), low residual stress (−1 to 0 GPa), and industrially acceptable electrical conductivity (>1000 S/cm) for a-IZO thin films. The extrapolation of growth parameters in light of the current results and previous knowledge leads to a new sub-space, resulting in a low residual stress of −0.52±0.04 GPa, a low surface roughness of 0.55±0.03 nm, and moderate electrical conductivity of 1962±3.84 S/cm in a-IZO thin films. These results demonstrate the utility of the DOE approach to multi-parameter optimization, which provides an important tool for the development of flexible TCOs for the next-generation flexible organic light emitting diodes applications.
Fractional-dimensional Child-Langmuir law for a rough cathode
This work presents a self-consistent model of space charge limited current transport in a gap combined of free-space and fractional-dimensional space (F{sup α}), where α is the fractional dimension in the range 0 < α ≤ 1. In this approach, a closed-form fractional-dimensional generalization of Child-Langmuir (CL) law is derived in classical regime which is then used to model the effect of cathode surface roughness in a vacuum diode by replacing the rough cathode with a smooth cathode placed in a layer of effective fractional-dimensional space. Smooth transition of CL law from the fractional-dimensional to integer-dimensional space is also demonstrated. The model has been validated by comparing results with an experiment.
From plane waves to local Gaussians for the simulation of correlated periodic systems
Here, we present a simple, robust, and black-box approach to the implementation and use of local, periodic, atom-centered Gaussian basis functions within a plane wave code, in a computationally efficient manner. The procedure outlined is based on the representation of the Gaussians within a finite bandwidth by their underlying plane wave coefficients. The core region is handled within the projected augment wave framework, by pseudizing the Gaussian functions within a cutoff radius around each nucleus, smoothing the functions so that they are faithfully represented by a plane wave basis with only moderate kinetic energy cutoff. To mitigate the effects of the basis set superposition error and incompleteness at the mean-field level introduced by the Gaussian basis, we also propose a hybrid approach, whereby the complete occupied space is first converged within a large plane wave basis, and the Gaussian basis used to construct a complementary virtual space for the application of correlated methods. We demonstrate that these pseudized Gaussians yield compact and systematically improvable spaces with an accuracy comparable to their non-pseudized Gaussian counterparts. A key advantage of the described method is its ability to efficiently capture and describe electronic correlation effects of weakly bound and low-dimensional systems, where plane waves are not sufficiently compact or able to be truncated without unphysical artifacts. We investigate the accuracy of the pseudized Gaussians for the water dimer interaction, neon solid, and water adsorption on a LiH surface, at the level of second-order Møller–Plesset perturbation theory.
Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition
We report the crack-free growth of a 45-pair Al{sub 0.30}Ga{sub 0.70}N/Al{sub 0.04}Ga{sub 0.96}N distributed Bragg reflector (DBR) on 2 in. diameter AlN/sapphire template by metalorganic chemical vapor deposition. To mitigate the cracking issue originating from the tensile strain of Al{sub 0.30}Ga{sub 0.70}N on GaN, an AlN template was employed in this work. On the other hand, strong compressive strain experienced by Al{sub 0.04}Ga{sub 0.96}N favors 3D island growth, which is undesired. We found that inserting an 11 nm thick GaN interlayer upon the completion of AlN template layer properly managed the strain such that the Al{sub 0.30}Ga{sub 0.70}N/Al{sub 0.04}Ga{sub 0.96}N DBR was able to be grown with an atomically smooth surface morphology. Smooth surfaces and sharp interfaces were observed throughout the structure using high-angle annular dark-field imaging in the STEM. The 45-pair AlGaN-based DBR provided a peak reflectivity of 95.4% at λ = 368 nm with a bandwidth of 15 nm.
Ion-beam-induced planarization, densification, and exfoliation of low-density nanoporous silica
Planarization of low-density nanoporous solids is challenging. Here, we demonstrate that ion bombardment to doses of ~10 15 cm -2 results in significant smoothing of silica aerogels, yielding mirror-like surfaces after metallization. The surface smoothing efficiency scales with the ion energy loss component leading to local lattice heating. Furthermore, planarization is accompanied by sub-surface monolith densification, resulting in surface exfoliation with increasing ion dose. These findings have implications for the fabrication of graded-density nanofoams, aerogel-based lightweight optical components, and meso-origami.
The laser shock station in the dynamic compression sector. I
The Laser Shock Station in the Dynamic Compression Sector [Advanced Photon Source (APS), Argonne National Laboratory] links a laser-driven shock compression platform with high energy x-ray pulses from the APS to achieve in-situ, time-resolved x-ray measurements (diffraction and imaging) in materials subjected to well-characterized, high stress, short duration planar shock waves. Additionally, the combination of this station and the other DCS experimental stations provides a unique and versatile experimental facility to study condensed state phenomena by undertaking real-time, multi-scale measurements in materials subjected to a wide range of shock amplitudes (to above ~350 GPa) and time-durations (~10 ns to 1 μs). The Laser Shock Station uses a 100 joule, 5-17 ns, 351 nm frequency tripled Nd:glass laser with programmable pulse shaping and focal profile smoothing for maximum precision. The laser is capable of a shot every 30 minutes. The interaction chamber contains multiple ports for simultaneous diagnostics, a sample holder that allows sequential exposure for 14 samples without breaking vacuum, the capability to vary the angle between the x-ray beam and laser beam by 135°, and the ability to translate to select one of two types of x-ray beams. X-ray data can be taken with a temporal resolution of ~90 psec. Highly reproducible, planar shocks can be propagated in samples to undertake precise and well-characterized experiments. In a series of ten shots, the absolute variation in the time the shock breaks out at the back of the sample is less than 500ps and the variation in peak particle velocity at the sample/window interface is 4.3%. Lastly, this paper describes the entire DCS Laser Shock Station, including sample fabrication and diagnostics, as well as representative experimental results from shock compressed tantalum to demonstrate the excellent quality of x-ray diffraction data in solid tantalum and to establish the stress for tantalum melting.