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At least 1,495 records · Page 83

The influence of point defects on the thermal conductivity of AlN crystals

Here, the average bulk thermal conductivity of free-standing physical vapor transport and hydride vapor phase epitaxy single crystal AlN samples with different impurity concentrations is analyzed using the 3ω method in the temperature range of 30–325K. AlN wafers grown by physical vapor transport show significant variation in thermal conductivity at room temperature with values ranging between 268W/m K and 339W/m K. AlN crystals grown by hydride vapor phase epitaxy yield values between 298W/m K and 341W/m K at room temperature, suggesting that the same fundamental mechanisms limit the thermal conductivity of AlN grown by both techniques. All samples in this work show phonon resonance behavior resulting from incorporated point defects. Samples shown by optical analysis to contain carbon-silicon complexes exhibit higher thermal conductivity above 100K. Lastly, phonon scattering by point defects is determined to be the main limiting factor for thermal conductivity of AlN within the investigated temperature range.

36 MATERIALS SCIENCE↗

Point defects and dopants of boron arsenide from first-principles calculations: Donor compensation and doping asymmetry

We apply hybrid density functional theory calculations to identify the formation energies and thermodynamic charge transition levels of native point defects, common impurities, and shallow dopants in B As . We find that As B antisites, boron-related defects such as V B , B As , and B i -V B complexes, and antisite pairs are the dominant intrinsic defects. Native B As is expected to exhibit p-type conduction due to the acceptor-type characteristics of V B and BAs. Among the common impurities we explored, we found that C substitutional defects and H interstitials have relatively low formation energies and are likely to contribute free holes. Interstitial hydrogen is surprisingly also found to be stable in the neutral charge state. Be B , Si As , and Ge As are suggested to be excellent shallow acceptors with low ionization energy (<0.03 eV) and negligible compensation by other point defects considered here. Yet, donors such as Se As , Te As Si B , and Ge B have a relatively large ionization energy (~0.15 eV) and are likely to be passivated by native defects such as B As and V B , as well as C As , H i , and H B . The hole and electron doping asymmetry originates from the heavy effective mass of the conduction band due to its boron orbital character, as well as from boron-related intrinsic defects that compensate donors.

36 MATERIALS SCIENCE↗

Band-to-band transitions and critical points in the near-infrared to vacuum ultraviolet dielectric functions of single crystal urania and thoria

Band-to-band transition energy parameters for single-crystal actinide samples of uranium oxide and thorium oxide were determined and compared using spectroscopic ellipsometry and critical-point dielectric function analyses. Spectroscopic ellipsometry measurements from the near-infrared to the vacuum ultraviolet spectral region were used to determine the dielectric functions of uranium oxide and thorium oxide. Furthermore, the critical-point structure is similar between UO 2 and ThO 2 but strongly blue shifted for ThO 2 . We find bandgap energies of 2.1 eV and 5.4 eV for UO2 and ThO2, respectively.

42 ENGINEERING↗

Characterization of the 2-methylvinoxy radical + O 2 reaction: A focal point analysis and composite multireference study

Vinoxy radicals are involved in numerous atmospheric and combustion mechanisms. High-level theoretical methods have recently shed new light on the reaction of the unsubstituted vinoxy radical with O 2 . The reactions of 1-methylvinoxy radical and 2-methylvinoxy radical with molecular oxygen have experimental high pressure limiting rate constants, k ∞ , 5–7 times higher than that of the vinoxy plus O 2 reaction. In this work, high-level ab initio quantum chemical computations are applied to the 2-methylvinoxy radical plus O 2 system, namely, the formation and isomerization of the 1-oxo-2-propylperoxy radical, the immediate product of O 2 addition to the 2-methylvinoxy radical. Multireference methods were applied to the entrance channel. No barrier to O 2 addition could be located, and more sophisticated treatment of dynamic electron correlation shows that the principal difference between O 2 addition to the vinoxy and 2-methylvinoxy radicals is a larger steric factor for 2-methylvinoxy + O 2 . This is attributed to the favorable interaction between the incoming O 2 molecule and the methyl group of the 2-methylvinoxy radical. Via the focal point approach, energetics for this reaction were determined, in most cases, to chemical accuracy. The coupled-cluster singles, doubles, and perturbative triples [CCSD(T)] correlation energy and Hartree–Fock energies were independently extrapolated to the complete basis set limit. A correction for the effect of higher excitations was computed at the CCSDT(Q)/6-31G level. Corrections for the frozen-core approximation, the Born–Oppenheimer approximation, the nonrelativistic approximation, and the zero-point vibrational energy were included. From the 1-oxo-2-propylperoxy radical, dissociation to reactants is competitive with the lowest energy isomerization pathway. The lowest energy isomerization pathway ultimately forms acetaldehyde, CO, and ·OH as the final products.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Point defects in Ga 2 O 3

In the field of high-power electronics, gallium oxide (Ga 2 O 3 ) is attracting attention due to its wide band gap and ability to be doped n-type. Point defects, including vacancies, impurities, and dopants, play important roles in optimizing device performance. This tutorial discusses the fundamental properties of point defects in monoclinic β-Ga 2 O 3 and the methods employed to study them. Oxygen vacancies are deep donors that do not cause n-type conductivity but may compensate acceptors. Gallium vacancies are deep acceptors that can be partially passivated by hydrogen. Substitutional magnesium is a promising acceptor that produces semi-insulating material and also forms a complex with hydrogen. Calcium and iron also have deep acceptor levels. Iridium deep donors are introduced into crystals grown from a melt in an Ir crucible. Here, other defects are introduced by irradiation with energetic particles such as neutrons or protons. In addition to altering the electronic properties, defects give rise to UV/visible emission bands in photoluminescence and cathodoluminescence spectra.

36 MATERIALS SCIENCE↗

A first-principles understanding of point defects and impurities in GaN

Attaining control over the electrical conductivity of gallium nitride through impurity doping is one of the foremost achievements in semiconductor science. Yet, unwanted contaminants and point defects continue to limit device performance, and experimental techniques alone are insufficient for elucidating the behavior of these unintentionally incorporated species. Methodological advancements have made first-principles calculations more powerful than ever and capable of quantitative predictions, though care must still be taken in comparing results from theory and experiment. In this Tutorial, we explain the basic concepts that define the behavior of dopants, unintentional impurities, and point defects in GaN. We also describe how to interpret experimental results in the context of theoretical calculations and also discuss how the properties of defects and impurities vary in III-nitride alloys. Lastly, we examine how the physics of defects and impurities in GaN is relevant for understanding other wide-bandgap semiconductor materials, such as the II–IV-nitrides, boron nitride, and the transition metal nitrides.

36 MATERIALS SCIENCE↗

A first-principles investigation of point defect structure and energetics in ThO 2

The structure and energetics of charged point defects in thorium dioxide (ThO 2 ) have been investigated using the density functional theory (DFT) and phonon simulations. DFT simulations were performed under both zero-pressure and constant volume conditions. Termed as the free volume change of the point defects, the change in volume of the supercell has been computed in the zero-pressure case. Supercell expansion was observed with the increase of the (nominal) charge state of anion (O) interstitials and cation (Th) vacancies from neutral to its maximum. On the contrary, contraction of the supercell has been observed with anion vacancies and cation interstitials as the defect charge increases. The supercell volume change with respect to the charge state has been correlated with the resulting defect energetics. It has been observed that, as the defect charge increased, the internal energy and entropy of defect formation of the cation vacancies and anion interstitials were found to increase, while that of the cation interstitials and anion vacancies decreased. Here, the temperature dependence of internal energy and entropy has also been examined. It was found that, as the temperature increases, the internal energies of the formation of cation vacancies and anion interstitials decrease, while those of the cation interstitials and anion vacancies increase. An opposite observation is seen for the entropies of formation defects when above room temperatures.

42 ENGINEERING↗

PigmentHunter: A point-and-click application for automated chlorophyll-protein simulations

Chlorophyll proteins (CPs) are the workhorses of biological photosynthesis, working together to absorb solar energy, transfer it to chemically active reaction centers, and control the charge-separation process that drives its storage as chemical energy. Yet predicting CP optical and electronic properties remains a serious challenge, driven by the computational difficulty of treating large, electronically coupled molecular pigments embedded in a dynamically structured protein environment. To address this challenge, we introduce here an analysis tool called PigmentHunter, which automates the process of preparing CP structures for molecular dynamics (MD), running short MD simulations on the nanoHUB.org science gateway, and then using electrostatic and steric analysis routines to predict optical absorption, fluorescence, and circular dichroism spectra within a Frenkel exciton model. Inter-pigment couplings are evaluated using point-dipole or transition-charge coupling models, while site energies can be estimated using both electrostatic and ring-deformation approaches. The package is built in a Jupyter Notebook environment, with a point-and-click interface that can be used either to manually prepare individual structures or to batch-process many structures at once. Here, we illustrate PigmentHunter’s capabilities with example simulations on spectral line shapes in the light harvesting 2 complex, site energies in the Fenna–Matthews–Olson protein, and ring deformation in photosystems I and II.

14 SOLAR ENERGY↗

Many-body perturbation theory with hybrid density functional theory starting points accelerated by adaptively compressed exchange

We report on the use of the adaptively compressed exchange (ACE) operator to accelerate many-body perturbation theory (MBPT) calculations, including G 0 W 0 and the Bethe–Salpeter equation (BSE), for hybrid density functional theory starting points. We show that by approximating the exact exchange operator with the low-rank ACE operator, substantial computational savings can be achieved with systematically controllable errors in the quasiparticle energies computed with full-frequency G 0 W 0 and the optical absorption spectra and vertical excitation energies computed by solving the BSE within density matrix perturbation theory. Our implementation makes use of the ACE-accelerated electronic Hamiltonian to carry out both G 0 W 0 and BSE without explicitly computing empty states. We show the robustness of the approach and present the computational gains obtained on both the central processing unit and graphics processing unit nodes. In conclusion, our work will facilitate the exploration and evaluation of fine-tuned hybrid starting points aimed at enhancing the accuracy of MBPT calculations without involving computationally demanding self-consistency in Hedin’s equations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Extending the Mott–Gurney law to one-dimensional nonplanar diodes using point transformations

Recent studies have applied variational calculus, conformal mapping, and point transformations to generalize the one-dimensional (1D) space-charge limited current density (SCLCD) and electron emission mechanisms to nonplanar geometries; however, these assessments have focused on extending the Child–Langmuir law (CLL) for SCLCD in vacuum. Since the charge in the diode is independent of the coordinate system (i.e., covariant), we apply bijective point transformations to extend the Mott–Gurney law (MGL) for the SCLCD in a collisional or semiconductor gap to nonplanar 1D geometries. This yields a modified MGL that replaces the Cartesian gap distance with a canonical gap distance that may be written generally in terms of geometric scale factors that are known for multiple geometries. We tabulate results for common geometries. Such an approach may be applied to any current density, including non-space-charge limited gaps and SCLCD that may fall between the CLL and MGL.

Garner, Allen L. [Purdue Univ., West Lafayette, IN↗

A comparison of the dielectric function for p-point water models

We compute the longitudinal dielectric function ɛl(k) for p-point water models, p = 3 (SPC/E, TIP3P), p = 4 (TIP4P-EW, OPC), and p = 5 (TIP5P-E) from the charge–charge fluctuation function SZZ(k), obtained from two methods: average of the charge in k-space (method:sum) and from the pair distribution function in Fourier space (method:integral). The latter requires a continuation to small k-values, which we thoroughly discuss. We conclude with a detailed comparison of the longitudinal dielectric function for the different p-point models and its main characteristics: small k and large k limits, position of the poles, and its (complex) zeros.

Shevy, Noah [Ames National Laboratory, Department ↗

Correlation of the ionisation response at selected points of IC sensitive regions with SEE sensitivity parameters under pulsed laser irradiation

The statistics of the ionisation response amplitude measured at selected points and their surroundings within sensitive regions of integrated circuits (ICs) under focused femtosecond laser irradiation is obtained for samples chosen from large batches of two types of ICs. A correlation between these data and the results of full-chip scanning is found for each type. The criteria for express validation of IC single-event effect (SEE) hardness based on ionisation response measurements at selected points are discussed. (laser applications and other topics in quantum electronics)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Scanning photoelectron microscopy using a pointed capillary probe

The possibilities of a new type of scanning probe microscopy (SPM) for two different samples are experimentally demonstrated. The method is based on the use of a pointed capillary, which can simultaneously act as a ‘classical’ SPM probe and also as a controlled thin channel for transporting charged particles emitted by the surface to the detector. In the experiment, photoelectrons pass through a dielectric hollow cone probe with an aperture radius of 1 μm and detected by microchannel plates at different points of the investigated conducting surface irradiated by the second harmonic of a femtosecond Ti : sapphire laser. As a result, the sample’s surface profile is visualised with a subwavelength spatial resolution. This method makes it possible to control spatially localised beams of electrons, ions, neutral atoms (molecules) and soft X-ray radiation, as well as opens a possibility for research in the field of nanoscale photodesorption of molecular ions. (electron microscopy)

74 ATOMIC AND MOLECULAR PHYSICS↗

Fractional charge and inter-Landau–level states at points of singular curvature

Significance Identifying universal topological properties of quantum phases of matter, namely, signatures robust to variations in system-specific details, can elucidate the essential physics of these exotic phases. Here we demonstrate that quantum Hall states behave universally at experimentally accessible singularly curved points on a lattice. At such points they bind an excess fractional charge, universally relatable to their curvatures, as well as bound states with energies at universal fractions of the inter-Landau–level energy gap. These bound states are both spatially as well as energetically isolated, and thus provide a promising new platform for creating qubits for quantum computation. Extensions of these ideas to other lattice topological phases will result in a new method of characterizing such phases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Surface premelting of ice far below the triple point

Premelting of ice, a quasi-liquid layer (QLL) at the surface below the melting temperature, was first postulated by Michael Faraday 160 y ago. Since then, it has been extensively studied theoretically and experimentally through many techniques. Existing work has been performed predominantly on hexagonal ice, at conditions close to the triple point. Whether the same phenomenon can persist at much lower pressure and temperature, where stacking disordered ice sublimates directly into water vapor, remains unclear. Herein, we report direct observations of surface premelting on ice nanocrystals below the sublimation temperature using transmission electron microscopy (TEM). Similar to what has been reported on hexagonal ice, a QLL is found at the solid-vapor interface. It preferentially decorates certain facets, and its thickness increases as the phase transition temperature is approached. In situ TEM reveals strong diffusion of the QLL, while electron energy loss spectroscopy confirms its amorphous nature. More significantly, the premelting observed in this work is thought to be related to the metastable low-density ultraviscous water, instead of ambient liquid water as in the case of hexagonal ice. This opens a route to understand premelting and grassy liquid state, far away from the normal water triple point.

58 GEOSCIENCES↗

The source provenance of an obsidian Eden point from Sierra County, New Mexico

Eden projectile points associated with the Cody complex are underrepresented in the late Paleoindian record of the American Southwest. EDXRF analysis of an obsidian Eden point from a site in Sierra County, New Mexico demonstrates this artifact is from the Cerro del Medio (Valles Rhyolite) source in the Jemez Mountains. Lastly, we contextualize our results by examining variability in obsidian procurement practices beyond the Cody heartland in southcentral New Mexico.

58 GEOSCIENCES↗

CENTAURUS A AS A POINT SOURCE OF ULTRAHIGH ENERGY COSMIC RAYS

We probe the possibility that Centaurus A (Cen A) is a point source of ultrahigh energy cosmic rays (UHECRs) observed by Pierre Auger Observatory (PAO), through the statistical analysis of the arrival direction distribution. For this purpose, we set up the Cen A dominance model for the UHECR sources, in which Cen A contributes the fraction f {sub C} of the whole UHECR with energy above 5.5 Multiplication-Sign 10{sup 19} eV and the isotropic background contributes the remaining 1 - f {sub C} fraction. The effect of the intergalactic magnetic fields on the bending of the trajectory of Cen A originated UHECRs is parameterized by the Gaussian smearing angle {theta} {sub s}. For the statistical analysis, we adopted the correlational angular distance distribution (CADD) for the reduction of the arrival direction distribution and the Kuiper test to compare the observed and the expected CADDs. We identify the excess of UHECRs in the Cen A direction and fit the CADD of the observed PAO data by varying two parameters f {sub C} and {theta} {sub s} of the Cen A dominance model. The best-fit parameter values are f {sub C} Almost-Equal-To 0.1 (the corresponding Cen A fraction observed at PAO is f {sub C,PAO} Almost-Equal-To 0.15, that is, about 10 out of 69 UHECRs) and {theta} {sub s} = 5 Degree-Sign with the maximum likelihood L {sub max} = 0.29. This result supports the existence of a point source smeared by the intergalactic magnetic fields in the direction of Cen A. If Cen A is actually the source responsible for the observed excess of UHECRs, the rms deflection angle of the excess UHECRs implies the order of 10 nG intergalactic magnetic field in the vicinity of Cen A.

79 ASTRONOMY AND ASTROPHYSICS↗

KINETIC MODELING OF PARTICLE ACCELERATION IN A SOLAR NULL-POINT RECONNECTION REGION

The primary focus of this paper is on the particle acceleration mechanism in solar coronal three-dimensional reconnection null-point regions. Starting from a potential field extrapolation of a Solar and Heliospheric Observatory (SOHO) magnetogram taken on 2002 November 16, we first performed magnetohydrodynamics (MHD) simulations with horizontal motions observed by SOHO applied to the photospheric boundary of the computational box. After a build-up of electric current in the fan plane of the null point, a sub-section of the evolved MHD data was used as initial and boundary conditions for a kinetic particle-in-cell model of the plasma. We find that sub-relativistic electron acceleration is mainly driven by a systematic electric field in the current sheet. A non-thermal population of electrons with a power-law distribution in energy forms in the simulated pre-flare phase, featuring a power-law index of about -1.78. This work provides a first step toward bridging the gap between macroscopic scales on the order of hundreds of Mm and kinetic scales on the order of centimeter in the solar corona, and explains how to achieve such a cross-scale coupling by utilizing either physical modifications or (equivalent) modifications of the constants of nature. With their exceptionally high resolution-up to 135 billion particles and 3.5 billion grid cells of size 17.5 km-these simulations offer a new opportunity to study particle acceleration in solar-like settings.

79 ASTRONOMY AND ASTROPHYSICS↗