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At least 1,495 records · Page 83

Dynamics of self-hybridized exciton–polaritons in 2D halide perovskites

Abstract Excitons, bound electron–hole pairs, in two-dimensional hybrid organic inorganic perovskites (2D HOIPs) are capable of forming hybrid light-matter states known as exciton-polaritons (E–Ps) when the excitonic medium is confined in an optical cavity. In the case of 2D HOIPs, they can self-hybridize into E–Ps at specific thicknesses of the HOIP crystals that form a resonant optical cavity with the excitons. However, the fundamental properties of these self-hybridized E–Ps in 2D HOIPs, including their role in ultrafast energy and/or charge transfer at interfaces, remain unclear. Here, we demonstrate that >0.5 µm thick 2D HOIP crystals on Au substrates are capable of supporting multiple-orders of self-hybridized E–P modes. These E–Ps have high Q factors (>100) and modulate the optical dispersion for the crystal to enhance sub-gap absorption and emission. Through varying excitation energy and ultrafast measurements, we also confirm energy transfer from higher energy E–Ps to lower energy E–Ps. Finally, we also demonstrate that E–Ps are capable of charge transport and transfer at interfaces. Our findings provide new insights into charge and energy transfer in E–Ps opening new opportunities towards their manipulation for polaritonic devices.

42 ENGINEERING↗

Unraveling two distinct polymorph transition mechanisms in one n-type single crystal for dynamic electronics

Cooperativity is used by living systems to circumvent energetic and entropic barriers to yield highly efficient molecular processes. Cooperative structural transitions involve the concerted displacement of molecules in a crystalline material, as opposed to typical molecule-by-molecule nucleation and growth mechanisms which often break single crystallinity. Cooperative transitions have acquired much attention for low transition barriers, ultrafast kinetics, and structural reversibility. However, cooperative transitions are rare in molecular crystals and their origin is poorly understood. Crystals of 2-dimensional quinoidal terthiophene (2DQTT-o-B), a high-performance n-type organic semiconductor, demonstrate two distinct thermally activated phase transitions following these mechanisms. Here we show reorientation of the alkyl side chains triggers cooperative behavior, tilting the molecules like dominos. Whereas, nucleation and growth transition is coincident with increasing alkyl chain disorder and driven by forming a biradical state. We establish alkyl chain engineering as integral to rationally controlling these polymorphic behaviors for novel electronic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Kinetically controlled metal-elastomer nanophases for environmentally resilient stretchable electronics

Nanophase mixtures, leveraging the complementary strengths of each component, are vital for composites to overcome limitations posed by single elemental materials. Among these, metal-elastomer nanophases are particularly important, holding various practical applications for stretchable electronics. However, the methodology and understanding of nanophase mixing metals and elastomers are limited due to difficulties in blending caused by thermodynamic incompatibility. Here, we present a controlled method using kinetics to mix metal atoms with elastomeric chains on the nanoscale. We find that the chain migration flux and metal deposition rate are key factors, allowing the formation of reticular nanophases when kinetically in-phase. Moreover, we observe spontaneous structural evolution, resulting in gyrified structures akin to the human brain. The hybridized gyrified reticular nanophases exhibit strain-invariant metallic electrical conductivity up to 156% areal strain, unparalleled durability in organic solvents and aqueous environments with pH 2–13, and high mechanical robustness, a prerequisite for environmentally resilient devices.

36 MATERIALS SCIENCE↗

An organic electrochemical transistor for multi-modal sensing, memory and processing

By integrating sensing, memory and processing functionalities, biological nervous systems are energy and area efficient. Emulating such capabilities in artificial systems is, however, challenging and is limited by the device heterogeneity of sensing and processing cores. Here we report an organic electrochemical transistor capable of sensing, memory and processing. The device has a vertical traverse architecture and a crystalline–amorphous channel that can be selectively doped by ions to enable two reconfigurable modes: a volatile receptor and a non-volatile synapse. As a volatile receptor, the device is capable of multi-modal sensing and is responsive to stimuli such as ions and light. As a non-volatile synapse, it is capable of 10-bit analogue states, low switching stochasticity and good state retention. We also show that the homogeneous integration of the devices could provide functions such as conditioned reflexes and could be used for real-time cardiac disease diagnoses via reservoir computing.

97 MATHEMATICS AND COMPUTING↗

1 kV Self-Aligned Vertical GaN Superjunction Diode

This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type nickel oxide (NiO). After the NiO sputtering around GaN pillars, the self-aligned process exposes the top pillar surfaces without the need for additional lithography or a patterned NiO etching which is usually difficult. The GaN SJ diode shows a breakdown voltage (B V) of 1100 V, a specific on-resistance (R ON ) of 0.4 mΩ· cm2, and a SJ drift-region resistance ( R dr ) of 0.13 mΩ· cm2. Further, the device also exhibits good thermal stability with B V retained over 1 kV and R ON dropped to 0.3 mΩ· cm2 at 125°C. The trade-off between B V and R dr is superior to the 1D GaN limit. These results show the promise of vertical GaN SJ power devices. The self-aligned process is applicable for fabricating the heterogeneous SJ based on various wide- and ultra-wide bandgap semiconductors.

42 ENGINEERING↗

A Blockchain-Enabled Sustainable Safety Management Framework for Connected Vehicles

The notion of an intelligent transportation system (ITS) aims to boost the performance of transportation networks, which has gained more and more traction in both academic and commercial circles. ITS is a constantly evolving vision that combines cutting-edge transportation approaches with new information, communication, computers, and other technology. ITS should discover consequence routes to enhance the sustainability, safety, and trustworthiness of the entire transportation system utilizing emerging technologies. In this paper, a sustainable safety management framework for connected vehicles is proposed by integrating blockchain. It introduces smart transportation equipment called an AI-enabled vehicle smart device (AVSD) for vehicular communications. AVSD can reduce energy consumption by decreasing the computational costs in vehicular communications. Smart contracts are used to identify vehicles automatically and establish secure communication among vehicles and emergency service stations (ESSs) like hospitals, police stations, and fire stations. The experiment results show that the proposed framework provides a communication environment for sustainable safety and security using the introduced smart transportation device. In conclusion, the proposed blockchain-enabled sustainable safety management framework has the potential to improve safety and sustainability in the transportation industry by creating a secure, decentralized, and transparent platform for managing safety data and promoting safe and sustainable driving behaviors.

42 ENGINEERING↗

Editorial: Quantum Information and Quantum Computing for Chemical Systems

Quantum computing has emerged as an exciting inter-disciplinary research topic that cuts across the traditional fields of physics, computer science, and engineering. It is a revolutionary model of computation that has offered new insights into methods for modeling and simulation of chemical systems. Applications of quantum computing to chemistry have demonstrated rapid progress on both theoretical and experimental fronts. Past theoretical efforts have shown how to adapt quantum computation to a variety of problems including electronic structure and molecular dynamics. In addition, the development of quantum algorithms for quantum chemistry has been stimulated by the greater availability of more capable quantum computing devices. Advances in the number and quality of qubits continues to enable remarkable proof-of-concept demonstrations working towards a milestone of quantum computational advantage.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Microfluidic aspirator and multi-purpose flow sensor and methods of making and using the same

Devices that include a liquid chamber including at least two ports, wherein the opening of a first port is larger than the opening of a second port, an air chamber including at least one port, and a membrane located between the liquid chamber and the air chamber, and a pressure sensor coupled to the port in the air chamber are provided. Systems including the disclosed devices are also provided. The systems include liquid in the liquid chamber of the device. Methods of using the devices and systems include measuring one or more properties of a liquid by flowing the liquid through the liquid chamber of the system and measuring the pressure produced due to the difference in size of the ports in the liquid chamber.

42 ENGINEERING↗

Low-Temperature 2D/2D Ohmic Contacts in WSe 2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition

in this work, we report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multiterminal WSe 2 Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate that the WSe 2 devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe 2 devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature (T) and density (n s ) dependence of the conductivity σ(T, n s ) demonstrate scaling behavior consistent with a metalinsulator quantum phase transition driven by electron-electron interactions, but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.

2D materials↗

An open-access database and analysis tool for perovskite solar cells based on the FAIR data principles

Large datasets are now ubiquitous as technology enables higher-throughput experiments, but rarely can a research field truly benefit from the research data generated due to inconsistent formatting, undocumented storage or improper dissemination. Here we extract all the meaningful device data from peer-reviewed papers on metal-halide perovskite solar cells published so far and make them available in a database. We collect data from over 42,400 photovoltaic devices with up to 100 parameters per device. We then develop open-source and accessible procedures to analyse the data, providing examples of insights that can be gleaned from the analysis of a large dataset. The database, graphics and analysis tools are made available to the community and will continue to evolve as an open-source initiative. This approach of extensively capturing the progress of an entire field, including sorting, interactive exploration and graphical representation of the data, will be applicable to many fields in materials science, engineering and biosciences.

14 SOLAR ENERGY↗

Atomistic modeling of energy band alignment in CdSeTe surfaces

Atomistic modeling based on Desnity Functional Theory (DFT)- 1/2 method coupled with surface Green’s function has been employed to investigate the energy band alignment results in cadmium selenium telluride (CdSeTe) surfaces. The structural and electronic properties of the bulk ternary alloy were established before cleaving the CdSeTe low index surface facets. The dependency of atomic-scale electronic features on different plane orientations was explored by studying the energy band alignment diagrams in the unreconstructed and reconstructed surfaces. While the low index CdSeTe surface geometry reconstructions replicate the CdTe surface geometries, the energy band alignment features of the unreconstructed and reconstructed CdSeTe surfaces differ from those observed in CdTe low index surfaces. The structurally relaxed reconstructed CdSeTe surface results in purely flat bands as opposed to an internal cusp feature observed in CdTe surfaces. The presence of an internal energy cusp in CdTe(111) surfaces is expected to play a key role in enhancing the hole charge transport towards the back of CdTe-only solar cell device and the absence of such feature in CdSeTe surface may explain one of the reason for the lower performance of CdSeTe-only solar cell seen experimentally.

36 MATERIALS SCIENCE↗

Fabrication and accelerated long-term stability test of asymmetrical hollow fiber-supported thin film oxygen separation membrane

Asymmetrical hollow fiber-supported thin film membrane may provide microstructural advantages for air separation and oxygen production. The fabrication of such a membrane is usually very difficult, particularly the sintering behaviors and thermal expansion coefficient (TEC) mismatch among multiple layers. This directly affects the reliability and long-term stability of the membrane. Here, in this research, the sintering behaviors of a set of simple oxides are systematically studied and ZnO is identified as a material component for composite substrate La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-δ (LSCF)-ZnO. The LSCF-ZnO ratios are further optimized by trading off several factors, e.g., matching the sintering behaviors and TECs of the LSCF-ZnO composite with those of LSCF thin film separation layer while enhancing the substrate strength. With the identified LSCF-ZnO ratio, the LSCF-ZnO composite hollow fiber substrate precursor is formed through slurry spinning process with porous microstructure being formed via phase inversion process. The thin film LSCF dense separation layer is then dip-coated on the substrate followed by co-sintering process. A thin, porous PrBaCo(Fe 0.6 Zr 0.2 Y 0.2 )O 5+δ (PBCFZY) catalyst layer is fabricated on the dense LSCF separation layer with dip-coating and sintering process, forming an asymmetrical membrane device LSCF-ZnO/LSCF/PBCFZY. Oxygen permeation test of the device is systematically conducted, and the fundamental mechanisms are analyzed. An accelerated long-term stability test of the membrane is also conducted (~550h, 46 thermal cycling loads), demonstrating excellent robustness and durability. The device is characterized and analyzed before and after the test. By replacing a considerable amount of high cost LSCF with low cost ZnO in the substrate, it not only enhances the stability but also reduces the capital cost of the membrane for practical applications.

42 ENGINEERING↗

Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy

Deep level defects in wide bandgap semiconductors, whose response times are in the range of power converter switching times, can have a significant effect on converter efficiency. We use Deep Level Transient Spectroscopy (DLTS) to evaluate such defect levels in the n- drift layer of vertical GaN (v-GaN) power diodes with VBD ~ 1500 V. DLTS reveals three energy levels that are at ~0.6 eV (highest density), ~0.27 eV (lowest density) and ~ 45 meV (a dopant level) from the conduction band. Dopant extraction from Capacitance-Voltage measurement test (C-V) at multiple temperatures enables trap density evaluation, and the ~0.6 eV trap has a density of 1.2 × 10 15 cm -3 . Here, the 0.6 eV energy level and its density are similar to a defect that is known to cause current collapse in GaN based surface conducting devices (like HEMTs). Analysis of reverse bias currents over temperature in the v-GaN diodes indicates a predominant role of the same defect in determining reverse leakage current at high temperatures, reducing switching efficiency.

42 ENGINEERING↗

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current–voltage characteristics. For these 24-nm gate length devices, the electron distribution features a smeared energy peak with an extended tail. This extension of the tail results primarily from the Coulomb scattering within the channel. A fraction of electrons that enter the drain retains their energy, resulting in an out-of-equilibrium distribution in the drain region. The simulated density and average energy of the hot electrons correlate well with experimentally observed device degradation. We propose that the interaction of high-energy electrons with hydrogen-passivated phosphorus dopant complexes within the drain may provide an additional pathway for interface-trap formation in these devices.

42 ENGINEERING↗

CORRTEX Analysis Techniques

Continuous Reflectometry for Radius versus Time Experiments, or CORRTEX, is a diagnostic that was developed during nuclear testing to measure the distance at which rock walls were disrupted by an explosive device as a function of the time at which disruption occurred. Distances recorded are dynamic measurements of cable length as the shockwaves from an explosive event crush the experiment cables, reducing their usable length. Applications of the CORRTEX diagnostic have been expanded in recent times to include instrumentation of the explosive device itself, to record phenomena such as the speed of the detonation wave in the explosive charge and the crushing or disassembly of material in the charge housing. The diagnostic has likewise been used to monitor explosive performance in rock blasting and oil well hole-clearing activities.

42 ENGINEERING↗

Efficient and choreographed quality-of- service management in dense 6G verticals with high-speed mobility requirements

Future 6G networks are envisioned to support very heterogeneous and extreme applications (known as verticals). Some examples are further-enhanced mobile broadband communications, where bitrates could go above one terabit per second, or extremely reliable and low-latency communications, whose end-to-end delay must be below one hundred microseconds. To achieve that ultra-high Quality-of-Service, 6G networks are commonly provided with redundant resources and intelligent management mechanisms to ensure that all devices get the expected performance. But this approach is not feasible or scalable for all verticals. Specifically, in 6G scenarios, mobile devices are expected to have speeds greater than 500 kilometers per hour, and device density will exceed ten million devices per square kilometer. In those verticals, resources cannot be redundant as, because of such a huge number of devices, Quality-of-Service requirements are pushing the effective performance of technologies at physical level. And, on the other hand, high-speed mobility prevents intelligent mechanisms to be useful, as devices move around and evolve faster than the usual convergence time of those intelligent solutions. New technologies are needed to fill this unexplored gap. Therefore, in this paper we propose a choreographed Quality-of-Service management solution, where 6G base stations predict the evolution of verticals at real-time, and run a lightweight distributed optimization algorithm in advance, so they can manage the resource consumption and ensure all devices get the required Quality-of-Service. Prediction mechanism includes mobility models (Markov, Bayesian, etc.) and models for time-variant communication channels. Besides, a traffic prediction solution is also considered to explore the achieved Quality-of-Service in advance. The optimization algorithm calculates an efficient resource distribution according to the predicted future vertical situation, so devices achieve the expected Quality-of-Service according to the proposed traffic models. An experimental validation based on simulation tools is also provided. Results show that the proposed approach reduces up to 12% of the network resource consumption for a given Quality-of-Service.

42 ENGINEERING↗