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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,495 records · Page 83
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Automated Controller Hardware-In-The-Loop Testbed for EV Charger Resilience Analysis

This paper focuses on the development of a tool that includes an automated testbed with controls, protection, and communications integrated into a real-time system to provide a platform to generate data sets for failure modes and effects analysis. This tool establishes a value for automation of data generation for different scenarios and addresses the gap of nonexistent field data for different applications and use cases. The features of this tool can further be expanded to include multiple power electronics models, communication protocols, and scaled system architectures. This general framework was evaluated for a DC fast charger system use case to provide quantitative solution for resiliency.

Starke, Michael↗
DOE OSTI2026

Multi-Objective Boundary Analysis of Discrete and Integrated SiC FET Modular Non-inverting Buck and Boost Converters for Fuel Cell EVs

This paper presents a multi-objective analysis of discrete and integrated SiC FET-based non-inverting buck-boost converter modules for modular fuel cell electric vehicle (EV) systems. Two converter ratings, 60 kW and 90 kW, are evaluated for both implementations, scalable up to 420 kW and 450 kW, respectively. Performance is assessed across efficiency, volumetric and gravimetric power density, cost, thermal stress, and estimated lifetime, where lifetime is derived from SiC FET B10 power-cycling data and junction temperature variations at rated power. A normalized overall performance index combined with a Pareto-boundary framework is used to identify configurations that optimally balance competing objectives. Results show that most configurations lie on the Pareto front, providing balanced trade-offs, while certain high-power discrete (90 kW at 450 kW) and integrated (60 kW at 180−420 kW) configurations are dominated. In general, discrete modules are more favorable for lower-power modular systems due to higher power density and lower cost, whereas integrated modules become more advantageous at higher power levels due to improved thermal behavior and longer lifetime. These findings provide practical design guidance for scalable fuel cell converter architectures and highlight the importance of system-level trade-offs in modular power electronics design.

Asa, Erdem [ORNL] (ORCID:0000000190884812)↗
DOE OSTI2026

Temporal Convolutional Network Using Empirical Mode Decomposition to Detect Faults in Grid Connected Systems

Grid-connected power electronic systems require timely and reliable fault detection to prevent equipment damage and reduce downtime. This paper presents a forecasting-based anomaly detection pipeline that decomposes voltage and current measurements into intrinsic mode functions (IMFs) using empirical mode decomposition (EMD), then trains a causal temporal convolutional network (TCN) on normal-operation IMF data to predict short-horizon future dynamics. Deviations between forecasts and observations are summarized as reliability-weighted residual scores and thresholded per sensor using robust statistics with temporal persistence constraints to suppress false positives. To reduce runtime, EMD is performed on downsampled signals for detection, while raw-rate EMD is applied only within a short region of interest for high-frequency interpretability near detected events. Results on a simulated grid-connected converter system demonstrate that IMF-domain forecasting improves anomaly separability relative to raw-signal forecasting and provides interpretable evidence of faults across decomposition channels.

Sutton, Elizabeth [ORNL] (ORCID:0009000078885935)↗
DOE OSTI2024

Development of a Hybrid Single/Two-Phase Capillary-Based Micro-Cooler using Copper Inverse Opals Wick with Silicon 3D Manifold for High-Heat-Flux Cooling Application

Previously, we reported two-phase capillary-based cooling using narrow (200 to 1000 ..mu..m) heater bridge copper inverse opal (CIO) wicks with heat flux level of 1400 Wcm -2 and superheat ~ 10 degrees C. Here, we demonstrate the area scaling of the proposed technology to a large-area micro-cooler for high-heat-flux cooling of microprocessors and power electronics. We developed a hybrid single/two-phase micro-cooler that relies on capillary-wicking in a 25-..mu..m-thick CIO with an open silicon microchannel 3D-manifold for liquid delivery and vapor extraction, achieving a high heat flux ~ 400 Wcm -2 over a heated area of 10 x 10 mm 2 . For a range of inlet water flowrates from 5 to 60 g(min) -1 , we achieved total thermal resistances and vapor qualities of 0.68 cm 2 degrees CW -1 to 0.2 cm 2 degrees CW -1 and 0.55 to 0.12, respectively. The flowrates are 10x smaller than those of conventional single- or two-phase microchannel cooling technology. The corresponding two-phase thermal resistances ranges from 0.05 to 0.02 cm 2 degrees CW -1 with temperature superheat of 8 to 6 degrees C, respectively. While the overall performance of the large-area (10 x 10 mm 2 ) capillary-based micro-cooler degraded compared to the previous demonstration of the technology for a heated area of 5 x 5 mm 2 , however, preliminary CFD modeling indicates that an improved manifold design will be able to achieve comparable performance.

capillary flow↗
DOE OSTI2019

A Modular SiC High-Frequency Solid-State Transformer for Medium-Voltage Applications: Design, Implementation, and Testing

The advancements in wide-bandgap devices are enabling applications of power electronic converters coupled directly with medium-voltage (MV) grids that incorporate galvanic isolation within the converter using high-frequency solid-state transformers (SSTs). This paper presents analysis, design, and the characterization results of a 50-kVA modular soft-switched ac-ac SST using silicon carbide (SiC) MOSFET for MV (>6 kV ac) applications. Here, the SST is comprised of two hard-switched ac-line interface bridges and a resonant dc-dc stage switched at approximately 180 kHz. To minimize the cost of switching elements per ampere and maximize the design flexibility, the design uses multiple discrete SiC devices of, readily available, 1700-V ratings. This paper covers the analysis of soft-switching operation, control architecture, converter design, and system-level integration.

17 WIND ENERGY↗
DOE OSTI2019

Optimal Design of Megahertz $LLC$ Converter for 48-V Bus Converter Application

Intermediate bus architecture employing 48-V bus converters is widely used in power supply applications. With the rapid increase of demanded power by these loads, higher efficiency and power density are driving better performance power management solutions. In this article, a Gallium Nitride (GaN) based design of a two-stage solution is proposed. The first stage is a multi-phase Buck for regulation. The second stage is an LLC converter with a fixed switching frequency for isolation. The detailed design and optimization of the LLC converter are studied. To achieve high power density and high efficiency, the transformer design becomes critical at megahertz frequency. The matrix transformer concept is applied and a merged winding structure is used for flux cancellation, which effectively reduces the ac winding losses. A novel primary termination and via structure is proposed, resulting in a great loss reduction. In addition, to study the current sharing of parallel winding layers, a 1-D analytic model is proposed, and a symmetrical winding layer scheme is used to balance the current distribution. Finally, the prototype for the two-stage bus converter is developed, with a peak efficiency of 96% and a power density of 615 W/in 3 .

42 ENGINEERING↗
DOE OSTI2019

An Analytical Model for Predicting Turn-ON Overshoot in Normally-OFF GaN HEMTs

Recently, a major challenge in the adoption of wide bandgap semiconductors for power electronic applications is the need to trade device performance for device safety. In this article, methods for predicting gate voltage overshoot in normally-OFF gallium nitride (GAN) high electron mobility transistors (HEMTs) are derived in order to deliver optimal device performance. Two models are proposed; a simple, yet less accurate second order model and a complex, yet more accurate fourth order model. These models allow for the calculation of gate resistances necessary for a desired amount of gate voltage overshoot. The nonlinear capacitances of the device are considered in the analysis. The models are validated with an experimental double-pulse tester. Furthermore, these newly developed models allow design engineers to extract the best possible performance of commercially available GaN devices while keeping the devices in their safe-operating region.

42 ENGINEERING↗
DOE OSTI2021

A Review of Cyber-Physical Security for Photovoltaic Systems

In this paper, the challenges and a future vision of the cyber-physical security of photovoltaic (PV) systems are discussed from a firmware, network, PV converter controls, and grid security perspective. The vulnerabilities of PV systems are investigated under a variety of cyber-attacks, ranging from data integrity attacks to software-based attacks. A success rate metric is designed to evaluate the impact and facilitate decision making. Model-based and data-driven methods for threat detection and mitigation are summarized. In addition, the blockchain technology that addresses cyber-attacks in software and cyber networks is described. Simulation and experimental results that show the impact of cyber-attacks at the converter (device) and grid (system) levels are presented. Finally, potential research opportunities are discussed for next-generation, cyber-secure power electronics systems. These opportunities include multi-scale controllability, self-/event-triggering control, artificial intelligence/machine learning, hot patching, and online security. As of today, this study will be one of the few comprehensive studies in this emerging and fast-growing area.

14 SOLAR ENERGY↗
DOE OSTI2022

Reliability and Lifetime Prediction Model of Sintered Silver Under High-Temperature Cycling

Although excellent reliability has been reported for sintered silver as a die-attach material under both thermal and power cycling loads in power electronics applications, the promise of this material as a large-area attachment at temperatures beyond 200 degrees C needs to be investigated. This paper presents insights into the thermomechanical behavior and reliability of sintered silver under extreme thermal cycling conditions. In this study, we bonded sintered silver samples and subjected it to a thermal cycling profile of -40 °C to 200 °C with high ramp rates. We periodically monitored samples under thermal cycling to detect the presence of any failure mechanisms using a scanning acoustic microscope. We also included 95Pb5Sn solder in the study to obtain reference data. Results show the occurrence of cracks in sintered silver followed by a rapid rate of crack growth that exceeded the failure criterion in just 50 cycles. The predominant failure mechanism we observed was adhesive failure. As a large-area attachment, solder exhibited a higher reliability than sintered silver but failed within 100 cycles. Finally, we performed thermomechanical modeling to compute strain energy density values and correlated these with the experimentally observed crack growth rates to formulate a lifetime prediction model for sintered silver.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Detection and Localization of Damaged Photovoltaic Cells and Modules Using Spread Spectrum Time Domain Reflectometry

The operating efficiency of photovoltaic (PV) plants can be improved if damaged or degraded modules can be detected and identified. Currently, string-level power electronics can detect problems with modules or cabling but not locate them, which would facilitate addressing these issues. Here, we investigate the ability of spread spectrum time domain reflectometry (SSTDR) to both detect and locate/identify damaged cells and modules within a series-connected PV string. We tested the ability of SSTDR to detect and locate single-cell mini-modules and full-sized PV modules, which were intentionally damaged by impacts with a hammer (breaking the glass and damaging the silicon below) or by cutting through some or all busbars. Damage to the glass and silicon of cells was detected and located within a small string of minimodules. Busbar damage was detectable only if an open was created by cutting through all intercell busbars. Furthermore, physical impact damage to the glass and silicon of a full-sized PV module could be detected, but further development of signal processing is needed to achieve localization of such damaged modules within a string.

14 SOLAR ENERGY↗
DOE OSTI2021

Electric Drive Technology Trends, Challenges, and Opportunities for Future Electric Vehicles

The transition to electric road transport technologies requires electric traction drive systems to offer improved performances and capabilities, such as fuel efficiency (in terms of MPGe, i.e., miles per gallon of gasoline-equivalent), extended range, and fast-charging options. The enhanced electrification and transformed mobility are translating to a demand for higher power and more efficient electric traction drive systems that lead to better fuel economy for a given battery charge. To accelerate the mass-market adoption of electrified transportation, the U.S. Department of Energy (DOE), in collaboration with the automotive industry, has announced the technical targets for light-duty electric vehicles (EVs) for 2025. This article discusses the electric drive technology trends for passenger electric and hybrid EVs with commercially available solutions in terms of materials, electric machine and inverter designs, maximum speed, component cooling, power density, and performance. Additionally, the emerging materials and technologies for power electronics and electric motors are presented, identifying the challenges and opportunities for even more aggressive designs to meet the need for next-generation EVs. Some innovative drive and motor designs with the potential to meet the DOE 2025 targets are also discussed.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2021

Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes

Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical parameter that not only determines device performance but is also a diagnostic of material quality. Here we present the use of electron-beam induced current to measure carrier diffusion lengths in continuously grown and etched-and-regrown GaN pin diodes as models for interfaces in more complex devices. Variations in the quality of the etched-and-regrown junctions are observed and shown to be due to the degradation of the n-type material. Finally, we observe an etched-and-regrown junction with properties comparable to a continuously grown junction.

42 ENGINEERING↗
DOE OSTI2019

Soft Magnetic Multilayered FeSiCrB–Fe$_{x}$N Metallic Glass Composites Fabricated by Spark Plasma Sintering

Novel multilayered FeSiCrB–Fe $_{x}$ N ( x = 2–4) metallic glass composites were fabricated using spark plasma sintering of FeSiCrB amorphous ribbons (Metglas 2605SA3 alloy) and Fe $_{x}$ N ( x = 2–4) powder. Crystalline Fe $_{x}$ N can serve as a high magnetic moment, high electrical resistance binder, and lamination material in the consolidation of amorphous and nanocrystalline ribbons, mitigating eddy currents while boosting magnetic performance and stacking factor in both wound and stacked soft magnetic cores. Stacking factors of nearly 100% can be achieved in an amorphous ribbon/iron nitride composite. FeSiCrB–Fe $_{x}$ N multilayered metallic glass composites prepared by spark plasma sintering have the potential to serve as a next-generation soft magnetic material in power electronics and electrical machines.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Student Chapter at Virginia Tech Resurrected [Society News]

The IEEE Power Electronics Society (PELS) Student Chapter at Virginia Tech, Blacksburg, hosted Prof. Pat Wheeler from the University of Nottingham, United Kingdom, on 10 April as part of the PELS Distinguished Lecturer Program. He gave an engaging talk, “Electric Superbike Racing: The Design and Construction of a Series Winning Electric Motorbike,” to approximately 30 Virginia Tech undergraduate and graduate students in engineering (electrical, computer, mechanical, industrial, and even biomedical) as well as industrial design and computer science (Figure 1).

42 ENGINEERING↗
DOE OSTI2025

Electromagnetic Transient Simulation of Photovoltaic Inverter Using Implicit-Explicit Solver

This paper introduces the implementation of electromagnetic transient (EMT) simulations of a photovoltaic (PV) inverter module using the Implicit-Explicit (ImEx) solver in the Suite of Nonlinear and Differential/Algebraic Equation Solvers (SUNDIALS). This study demonstrates the effectiveness of the ImEx solver in overcoming the challenges inherent in simulating the complex dynamics of PV inverter modules. Furthermore, using SUNDIALS’ ImEx solver module ARKODE for EMT simulation automates key aspects of the process, such as numerical integration, providing substantial benefits including enhanced consistency, faster implementation, reduced human error, and the capability to handle the complexities of advanced numerical integration. By conducting comparative simulations with an implicit method used in commercial software, the research showcases the ImEx solver’s capability in achieving high accuracy and reliability. Results indicate that leveraging the ImEx approach significantly enhances modeling fidelity and reduces simulation setup times, offering a promising tool for the EMT analysis of PV inverter systems in power electronics-dominated power grids.

Choi, Jongchan [ORNL] (ORCID:000000025952455X)↗
DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗
DOE OSTI2021

Real-time Implementation of a Dual-Active-Bridge Based Multi-Level Photovoltaic Converter

Silicon-carbide based, multi-level converters with dual-active-bridge (DAB) are getting attention for medium voltage, direct grid-connected, utility-scale photovoltaic (PV) applications due to their higher efficiency and power density. To de-risk complex control development for these high-voltage and high-power inverters, hardware-in-the-loop techniques are often required. Due to the high switching frequency and the large number of power electronic switches, off-the-shelf, real-time simulation tools are not yet fully developed for this application, even with FPGA-based simulators. To address this, a new co-simulation approach in FPGA is presented that utilizes Time-Stamped Bridge (TSB) for the higher frequency converters along with detailed fixed conductance based discrete device simulation of the rest of the circuit. A complex DAB-based PV converter with maximum switching frequency of 50 kHz is successfully simulated in real-time in the FPGA and the results are compared with offline simulation results. A controller hardware-in-the-loop (CHIL) platform is developed to demonstrate real-time, closed-loop test results for this DAB-based PV converter.

Dong, Zerui↗
DOE OSTI2021

Revisiting the Effects of Photovoltaic Module Efficiency on Installed System Cost and Market Adoption

We conduct bottom-up analysis of how PV module efficiency could influence residential rooftop installed system costs, using models with improved representation of how soft costs and power electronics are affected by efficiency. We show that the amount of system installed cost savings resulting from high efficiency modules depends on whether or not the system is area-constrained, with much larger savings for the area-constrained case. We then estimate the fraction of physically area-constrained rooftops in the United States to be 61%, with variation between 20% to over 80% of rooftops depending on the state. We find that fraction of area-constrained systems could grow to over 88% by 2050 if building and transportation loads are electrified.

efficiency↗