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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,495 records · Page 83
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Fabrication of nanopores in a graphene sheet with heavy ions: A molecular dynamics study

Molecular dynamics simulations were performed to study the formation process of nanopores in a suspended graphene sheet irradiated by using energetic ions though a mask. By controlling the ion parameters including mass, energy, and incident angle, different kinds of topography were observed in the graphene sheet. Net-like defective structures with carbon atom chains can be formed at low ion fluences, which provide the possibility to functionalize the irradiated sample with subsequent chemical methods; finally a perfect nanopore with smooth edge appears when the ion fluence is high enough. We found that the dependence of ion damage efficiency on ion fluence, energy, and incident angle are different from that predicted by the semi-empirical model based on the binary-collision approximation, which results from the special structure of graphene. Our results demonstrate that it is feasible to fabricate controlled nanopores/nanostructures in graphene via heavy ion irradiation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Phosphor-free nanopyramid white light-emitting diodes grown on (101{sup ¯}1) planes using nanospherical-lens photolithography

We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO{sub 2} mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the (101{sup ¯}1) planes towards the substrate and the perpendicular direction to the (101{sup ¯}1) planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was found that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale

Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A generalized tool for accurate time-domain separation of excited modes in spin-torque oscillators

We propose and develop an advanced signal processing technique that, combined with micromagnetic simulations, is able to deeply describe the non-stationary behavior of spin-torque oscillators, both in terms of time domain and spatial distribution of the magnetization dynamics. The Hilbert-Huang Transform is used for the identification of the time traces of each oscillation in a multimode excitation and enhanced with masking signals and the Ensemble Empirical Mode Decomposition. We emphasize that the technique developed here is general and can be used for any physical non-linear system in the presence of multimode dynamical excitation or intermittence.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice parameter mismatch is bridged by first growing 2-μm-tall intermediate Ge mesas on 8-μm-tall Si pillars by low-energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs crystals towards full pyramids exhibiting energetically stable (111) facets with decreasing Si pillar size. The release of the strain induced by the mismatch of thermal expansion coefficients in the GaAs crystals has been studied by X-ray diffraction and photoluminescence measurements. The strain release mechanism is discussed within the framework of linear elasticity theory by Finite Element Method simulations, based on realistic geometries extracted from scanning electron microscopy images.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A variable-temperature nanostencil compatible with a low-temperature scanning tunneling microscope/atomic force microscope

We describe a nanostencil lithography tool capable of operating at variable temperatures down to 30 K. The setup is compatible with a combined low-temperature scanning tunneling microscope/atomic force microscope located within the same ultra-high-vacuum apparatus. The lateral movement capability of the mask allows the patterning of complex structures. To demonstrate operational functionality of the tool and estimate temperature drift and blurring, we fabricated LiF and NaCl nanostructures on Cu(111) at 77 K.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Insight on the inconsistencies of Barkhausen signal measurements for radiation damage on nuclear reactor steel

This paper focuses on the use of magnetic measurements, using Barkhausen signals to determine the irradiation effects, attempting to predict fracture toughness changes on nuclear reactor structural materials and correlating these measurements to mechanical testing and microstructure. For this study, two types of nuclear reactor materials were investigated: one sensitive to irradiation effects, the JRQ IAEA's reference material (A533B- -type); and one resistant material, 15KH2MFA WWER's reactor pressure vessel steel. The samples were carefully identified within the original heat block, i.e. forged or rolled plate. These calibrated samples were irradiated at different neutron fluences up to 10{sup 23} n/m{sup 2}. We show how microstructural anisotropy can mask the irradiation effects in the magnetic measurements. A correlation between irradiation effects and the magnetic measurements is explained based on this study.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Large voltage modulation in magnetic field sensors from two-dimensional arrays of Y-Ba-Cu-O nano Josephson junctions

We have fabricated and tested two-dimensional arrays of YBa{sub 2}Cu{sub 3}O{sub 7−δ} superconducting quantum interference devices. The arrays contain over 36 000 nano Josephson junctions fabricated from ion irradiation of YBa{sub 2}Cu{sub 3}O{sub 7−δ} through narrow slits in a resist-mask that was patterned with electron beam lithography and reactive ion etching. Measurements of current-biased arrays in magnetic field exhibit large voltage modulations as high as 30 mV.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Study of the shape of an optical window in a super-resolution state by electromagnetic-thermal coupled simulation: Effects of melting of an active layer in an optical disc

We performed a multi-physics simulation for the propagation of electromagnetic waves and heat conduction in a super-resolution optical disc that includes an active layer of InSb. Because the change in the optical constant of InSb due to the phase transition is taken into account, the melting of the active layer can be realistically simulated in our calculation. It was found that in the case of an incident light power (P) of 2 mW, a profile of the electric field intensity transmitted through the InSb layer has an asymmetric shape with a narrow peak. This beam-narrowing was suggested to be an essential mechanism of the super-resolution, because a narrower light beam allows the detection of a smaller pit structure than the optical diffraction limit. This beam-narrowing was found to be originating from a small molten region produced in the InSb layer, which works as a mask for light exposure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Growth-substrate induced performance degradation in chemically synthesized monolayer MoS{sub 2} field effect transistors

We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) on Si/SiO{sub 2} substrates. MoS{sub 2} has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS{sub 2} samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS{sub 2}. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS{sub 2} is equal or superior to that of exfoliated material and has been possibly masked by a combination of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS{sub 2} devices following an identical fabrication process demonstrate the improvement in field-effect mobility.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ultraviolet laser patterning of porous silicon

This work reports on the fabrication of 1D fringed patterns on nanostructured porous silicon (nanoPS) layers (563, 372, and 290 nm thick). The patterns are fabricated by phase-mask laser interference using single pulses of an UV excimer laser (193 nm, 20 ns pulse duration). The method is a single-step and flexible approach to produce a large variety of patterns formed by alternate regions of almost untransformed nanoPS and regions where its surface has melted and transformed into Si nanoparticles (NPs). The role of laser fluence (5–80 mJ cm{sup −2}), and pattern period (6.3–16 μm) on pattern features and surface structuring are discussed. The results show that the diameter of Si NPs increases with fluence up to a saturation value of 75 nm for a fluence ≈40 mJ cm{sup −2}. In addition, the percentage of transformed to non-transformed region normalized to the pattern period follows similar fluence dependence regardless the period and thus becomes an excellent control parameter. This dependence is fitted within a thermal model that allows for predicting the in-depth profile of the pattern. The model assumes that transformation occurs whenever the laser-induced temperature increase reaches the melting temperature of nanoPS that has been found to be 0.7 of that of crystalline silicon for a porosity of around 79%. The role of thermal gradients across the pattern is discussed in the light of the experimental results and the calculated temperature profiles, and shows that the contribution of lateral thermal flow to melting is not significant for pattern periods ≥6.3 μm.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Large scale two-dimensional arrays of magnesium diboride superconducting quantum interference devices

Magnetic field sensors based on two-dimensional arrays of superconducting quantum interference devices were constructed from magnesium diboride thin films. Each array contained over 30 000 Josephson junctions fabricated by ion damage of 30 nm weak links through an implant mask defined by nano-lithography. Current-biased devices exhibited very large voltage modulation as a function of magnetic field, with amplitudes as high as 8 mV.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Tailoring broadband light trapping of GaAs and Si substrates by self-organised nanopatterning

We report on the formation of high aspect ratio anisotropic nanopatterns on crystalline GaAs (100) and Si (100) substrates exploiting defocused Ion Beam Sputtering assisted by a sacrificial self-organised Au stencil mask. The tailored optical properties of the substrates are characterised in terms of total reflectivity and haze by means of integrating sphere measurements as a function of the morphological modification at increasing ion fluence. Refractive index grading from sub-wavelength surface features induces polarisation dependent anti-reflection behaviour in the visible-near infrared (VIS-NIR) range, while light scattering at off-specular angles from larger structures leads to very high values of the haze functions in reflection. The results, obtained for an important class of technologically relevant materials, are appealing in view of photovoltaic and photonic applications aiming at photon harvesting in ultrathin crystalline solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Exponential time differencing methods with Chebyshev collocation for polymers confined by interacting surfaces

We present a fast and accurate numerical method for the self-consistent field theory calculations of confined polymer systems. It introduces an exponential time differencing method (ETDRK4) based on Chebyshev collocation, which exhibits fourth-order accuracy in temporal domain and spectral accuracy in spatial domain, to solve the modified diffusion equations. Similar to the approach proposed by Hur et al. [Macromolecules 45, 2905 (2012)], non-periodic boundary conditions are adopted to model the confining walls with or without preferential interactions with polymer species, avoiding the use of surface field terms and the mask technique in a conventional approach. The performance of ETDRK4 is examined in comparison with the operator splitting methods with either Fourier collocation or Chebyshev collocation. Numerical experiments show that our exponential time differencing method is more efficient than the operator splitting methods in high accuracy calculations. This method has been applied to diblock copolymers confined by two parallel flat surfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Directional gamma sensing from covariance processing of inter-detector Compton crosstalk energy asymmetries

Energy asymmetry of inter-detector crosstalk from Compton scattering can be exploited to infer the direction to a gamma source. A covariance approach extracts the correlated crosstalk from data streams to estimate matched signals from Compton gammas split over two detectors. On a covariance map the signal appears as an asymmetric cross diagonal band with axes intercepts at the full photo-peak energy of the original gamma. The asymmetry of the crosstalk band can be processed to determine the direction to the radiation source. The technique does not require detector shadowing, masking, or coded apertures, thus sensitivity is not sacrificed to obtain the directional information. An angular precision of better than 1° of arc is possible, and processing of data streams can be done in real time with very modest computing hardware.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Both antireflection and superhydrophobicity structures achieved by direct laser interference nanomanufacturing

Inspired by nature, a number of techniques have been developed to fabricate the bionic structures of lotus leaves and moth eyes in order to realize the extraordinary functions of self-cleaning and antireflection. Compared with the existing technologies, we present a straightforward method to fabricate well-defined micro and nano artificial bio-structures in this work. The proposed method of direct laser interference nanomanufacturing (DLIN) takes a significant advantage of high efficiency as only a single technological procedure is needed without pretreatment, mask, and pattern transfer processes. Meanwhile, the corresponding structures show both antireflection and superhydrophobicity properties simultaneously. The developed four-beam nanosecond laser interference system configuring the TE-TE-TE-TE and TE-TE-TE-TM polarization modes was set up to generate periodic micro cone and hole structures with a huge number of nano features on the surface. The theoretical and experimental results have shown that the periodic microcone structure exhibits excellent properties with both a high contact angle (CA = 156.3°) and low omnidirectional reflectance (5.9–15.4%). Thus, DLIN is a novel and promising method suitable for mass production of self-cleaning and antireflection surface structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer

In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al{sub 2}O{sub 3} layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-V{sub gate} measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4 V, the memory shows a noticeable threshold voltage (V{sub t}) shift of 2 V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10 V, a memory window of 5 V is achieved and the V{sub t} shift direction indicates that electrons tunnel from channel to charge storage layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗