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At least 1,495 records · Page 83
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DOE OSTI2023

Polariton Condensation in Gap-Confined States of Photonic Crystal Waveguides

Here, the development of patterned multiquantum well heterostructures in GaAs/AlGaAs waveguides has recently made it possible to achieve exciton-polariton condensation in a topologically protected bound state in the continuum (BIC). Polariton condensation was shown to occur above a saddle point of the two-dimensional polariton dispersion in a one-dimensional photonic crystal waveguide. A rigorous analysis of the condensation phenomenon in these systems, as well as the role of the BIC, is still missing. In the present Letter, we theoretically and experimentally fill this gap by showing that polariton confinement resulting from the negative effective mass and the photonic energy gap in the dispersion play a key role in enhancing the relaxation toward the condensed state. In fact, our results show that low-threshold polariton condensation is achieved within the effective trap created by the exciting laser spot, regardless of whether the resulting confined mode is long-lived (polariton BIC) or short-lived (lossy mode). In both cases, the spatial quantization of the polariton condensate and the threshold differences associated to the corresponding state lifetime are measured and characterized. For a given negative mass, a slightly lower condensation threshold from the polariton BIC mode is found and associated to its reduced radiative losses, as compared to the lossy one.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Local Markers for Crystalline Topology

Over the last few years, crystalline topology has been used in photonic crystals to realize edge- and corner-localized states that enhance light-matter interactions for potential device applications. However, the band-theoretic approaches currently used to classify bulk topological crystalline phases cannot predict the existence, localization, or spectral isolation of any resulting boundary-localized modes. While interfaces between materials in different crystalline phases must have topological states at some energy, these states need not appear within the band gap, and thus may not be useful for applications. Here, we derive a class of local markers for identifying material topology due to crystalline symmetries, as well as a corresponding measure of topological protection. As our real-space-based approach is inherently local, it immediately reveals the existence and robustness of topological boundary-localized states, yielding a predictive framework for designing topological crystalline heterostructures. In conclusion, beyond enabling the optimization of device geometries, we anticipate that our framework will also provide a route forward to deriving local markers for other classes of topology that are reliant upon spatial symmetries.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Electrical Control of Spin and Valley in Spin-Orbit Coupled Graphene Multilayers

Electrical control of magnetism has been a major technological pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, in this study, we propose and analyze a new mechanism for electrical switching of isospin, using chiral-stacked graphene multilayers, such as Bernal bilayer graphene or rhombohedral trilayer graphene, encapsulated by transition metal dichalcogenide (TMD) substrates. Leveraging the proximity-induced spin-orbit coupling from the TMD, we demonstrate electrical switching of correlation-induced spin and/or valley polarization, by reversing a perpendicular displacement field or the chemical potential. We substantiate our proposal with both analytical arguments and self-consistent Hartree-Fock numerics. Finally, we illustrate how the relative alignment of the TMDs, together with the top and bottom gate voltages, can be used to selectively switch distinct isospin flavors, putting forward correlated Van der Waals heterostructures as a promising platform for spintronics and valleytronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Gate-Controlled Anyon Generation and Detection in Kitaev Spin Liquids

Reliable manipulation of non-Abelian Ising anyons supported by Kitaev spin liquids may enable intrinsically fault-tolerant quantum computation. Here, we introduce a standalone scheme for both generating and detecting individual Ising anyons using tunable gate voltages in a heterostructure containing a non-Abelian Kitaev spin liquid and a monolayer semiconductor. In this study, the key ingredients of our setup are a Kondo coupling to stabilize an Ising anyon in the spin liquid around each electron in the semiconductor, and a large charging energy to allow control over the electron numbers in distinct gate-defined regions of the semiconductor. In particular, a single Ising anyon can be generated at a disk-shaped region by gate tuning its electron number to one, while it can be interferometrically detected by measuring the electrical conductance of a ring-shaped region around it whose electron number is allowed to fluctuate between zero and one. We provide concrete experimental guidelines for implementing our proposal in promising candidate materials like α-RuCl 3 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Multiferroicity and Topology in Twisted Transition Metal Dichalcogenides

Van der Waals heterostructures have recently emerged as an exciting platform for investigating the effects of strong electronic correlations, including various forms of magnetic or electrical orders. Here, we perform an unbiased exact diagonalization study of the effects of interactions on topological flat bands of twisted transition metal dichalcogenides (TMDs) at odd integer fillings. For hole-filling ν h = 1 , we find that the Chern insulator phase, expected from interaction-induced spin-valley polarization of the bare bands, is quite fragile, and gives way to spontaneous multiferroic order—coexisting ferroelectricity and ferromagnetism, in the presence of long-range Coulomb repulsion. We provide a simple real-space picture to understand the phase diagram as a function of interaction range and strength. Our findings establish twisted TMDs as a novel and highly tunable platform for multiferroicity, and we outline a potential route towards electrical control of magnetism in the multiferroic phase. Published by the American Physical Society 2024

Abouelkomsan, Ahmed (ORCID:0000000247873357)↗
DOE OSTI2024

Moiré Exchange Effect in Twisted WSe 2 /WS 2 Heterobilayer

Moiré superlattices of layered transition metal dichalcogenides are proven to host periodic electron crystals due to strong correlation effects. These electron crystals can also be intertwined with intricate magnetic phenomena. Here, in this Letter, we present our findings on the moiré exchange effect, resulting from the modulation of local magnetic moments by electron crystals within well-aligned WSe 2 /WS 2 heterobilayers. Employing polarization-resolved magneto-optical spectroscopy, we unveil a high-energy excitonic resonance near one hole per moiré unit cell (v=–1), which possesses a giant g factor several times greater than the already very large g factor of the WSe 2 A exciton in this heterostructure. Supported by continuum model calculations, these high-energy states are found to be dark excitons brightened through Umklapp scattering from the moiré mini-Brillouin zone. When the carriers form a Mott insulating state near v=–1, the Coulomb exchange between doped carriers and excitons forms an effective magnetic field with moiré periodicity. This moiré exchange effect gives rise to the observed giant g factor for the excitonic Umklapp state.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Analytical Model for Atomic Relaxation in Twisted Moiré Materials

By virtue of being atomically thin, the electronic properties of heterostructures built from two-dimensional materials are strongly influenced by atomic relaxation. The atomic layers behave as flexible membranes rather than rigid crystals. Here we develop an analytical theory of lattice relaxation in twisted moiré materials. We obtain analytical results for the lattice displacements and corresponding pseudo gauge fields, as a function of twist angle. We benchmark our results for twisted bilayer graphene and twisted WSe 2 bilayers using large-scale molecular dynamics simulations. Our single-parameter theory is valid in graphene bilayers for twist angles 𝜃 ≳ 0.7°, and in twisted WSe 2 for 𝜃 ≳ 1.6°. Furthermore, we also investigate how relaxation alters the electronic structure in twisted bilayer graphene, providing a simple extension to the continuum model to account for lattice relaxation.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Topological Phenomena in Artificial Quantum Materials Revealed by Local Chern Markers

A striking example of frustration in physics is Hofstadter’s butterfly, a fractal structure that emerges from the competition between a crystal’s lattice periodicity and the magnetic length of an applied field. Current methods for predicting the topological invariants associated with Hofstadter’s butterfly are challenging or impossible to apply to a range of materials, including those that are disordered or lack a bulk spectral gap. Here, in this work, we demonstrate a framework for predicting a material’s local Chern markers using its position-space description and validate it against experimental observations of quantum transport in artificial graphene in a semiconductor heterostructure, inherently accounting for fabrication disorder strong enough to close the bulk spectral gap. By resolving local changes in the system’s topology, we reveal the topological origins of antidot-localized states that appear in artificial graphene in the presence of a magnetic field. Moreover, we show the breadth of this framework by simulating how Hofstadter’s butterfly emerges from an initially unpatterned 2D electron gas as the system’s potential strength is increased and predict that artificial graphene becomes a topological insulator at the critical magnetic field. Overall, we anticipate that a position-space approach to determine a material’s Chern invariant without requiring prior knowledge of its occupied states or bulk spectral gaps will enable a broad array of fundamental inquiries and provide a novel route to material discovery, especially in metallic, aperiodic, and disordered systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Defects in C d 3 A s 2 epilayers via molecular beam epitaxy and strategies for reducing them

Molecular beam epitaxy offers an exciting avenue for investigating the behavior of the topological semimetal Cd 3 As 2 , by providing routes for doping, alloying, strain engineering, and heterostructure formation. To date, however, minimal exploration has been devoted to the impact of defects that are incorporated into epilayers due to constraints imposed by the substrate and narrow growth window. Here, we use a combination of lattice-matched Zn x Cd 1-x Te buffer layers, miscut substrates, and broadband illumination to study how dislocations, twins, and point defects influence the electron mobility of Cd 3 As 2 . In conclusion, a combination of defect suppression approaches produces Cd 3 As 2 epilayers with electron mobilities upwards of 15000 cm 2 /Vs at room temperature.

14 SOLAR ENERGY↗
DOE OSTI2020

Topological properties of SnSe/EuS and SnTe/CaTe interfaces

Herein, we use density functional theory calculations to study the electronic structure of epitaxial (111) interfaces of the topological crystalline insulators SnSe and SnTe with the magnetic insulator EuS and the non-magnetic insulator CaTe, respectively. We further consider both interface slab models with a vacuum region and periodic heterostructures without vacuum. We find that gaps of 21 meV at the Γ point and 9 meV at the M point arise in the topological state at the SnSe/EuS interface, due to the magnetic proximity effect, which breaks the time reversal symmetry. The surface state at Γ is shifted below the Fermi level by 88 meV and the surface state at M is shifted above the Fermi level by 47 meV, owing to band bending at the interface. By comparison, the topological state at the interface of SnTe/CaTe is unperturbed by the presence of non-magnetic CaTe.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Working principles of doping-well structures for high-mobility two-dimensional electron systems

Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultrahigh-mobility 2DESs, the working principles of the doping-well structure have not been reported. As such, here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Plasmonics in argentene

Merging concepts from the fields of ab initio materials science and nanophotonics, there is now an opportunity to engineer new photonic materials whose optical, transport, and scattering properties are tailored to attain thermodynamic and quantum limits. Here we present first-principles calculations predicting that Argentene, a single-crystalline hexagonal close-packed monolayer of Ag, can dramatically surpass the optical properties and electrical conductivity of conventional plasmonic materials. In the low-frequency limit, we show that the scattering rate and resistivity reduce by a factor of 3 compared to the bulk three-dimensional metal. Most importantly, the low scattering rate extends to optical frequencies in sharp contrast to, e.g., graphene, whose scattering rate increase drastically in the near-infrared range due to optical-phonon scattering. Combined with an intrinsically high carrier density, this facilitates highly confined surface plasmons extending to visible frequencies. We evaluate Argentene across three distinct figures of merit, in each outperforming the state-of-the-art, making it a valuable addition to the two-dimensional heterostructure toolkit for quantum optoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Synthesis and Characterization of Bulk Nd 1-x Sr x NiO 2 and Nd 1-x Sr x NiO 3

The recent reports of superconductivity in Nd 1-x Sr x NiO 2 /SrTiO 3 heterostructures have reinvigorated interest in potential superconductivity of low-oxidation state nickelates. Synthesis of Ni 1+ -containing compounds is notoriously difficult. In the current work, a combined sol-gel combustion and high-pressure annealing technique was employed to prepare polycrystalline perovskite Nd 1-x Sr x NiO 3 (x = 0, 0.1, and 0.2). Metal nitrates and metal acetates were used as starting materials, and the latter were found to be superior to the former in terms of safety and reactivity. The Nd 1-x Sr x NiO 3 compounds were subsequently reduced to Nd1-xSrxNiO2 using calcium hydride in a sealed, evacuated quartz tube. To understand the synthesis pathway, the evolution from NdNiO3 to NdNiO 2 was monitored using in situ synchrotron x-ray diffraction during the reduction process. Electrical transport properties were consistent with an insulator-metal transition occurring between x = 0 and 0.1 for Nd 1-x Sr x NiO 3 . Superconductivity was not observed in our bulk samples of Nd 1-x Sr x NiO 2 . Neutron diffraction experiments at 3 and 300 K were performed on Nd 0.9 Sr 0.1 NiO 2 , in which no magnetic Bragg reflections were observed, and the results of structural Rietveld refinement are provided.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Giant anisotropic magnetoresistance in oxygen-vacancy-ordered epitaxial La 0.5 Sr 0.5 CoO 3–δ films

Recent advances in complex oxide heterostructures have realized extraordinary control over oxygen vacancies ($V_\text{O}$), including strain-tuned $V_\text{O}$ order, and electric-field-controlled transformations between perovskite and $V_\text{O}$-ordered structures. Perovskite cobaltites such as La 1– x Sr x CoO 3–δ provide a prime example, recent work demonstrating that strain engineering of $V_\text{O}$ ordering induces large (~10 7 erg/cm 3 ) perpendicular magnetic anisotropy. Here we show that $V_\text{O}$-ordered epitaxial La 0.5 Sr 0.5 CoO 3–δ films exhibit not only strong magnetic anisotropy, but also a giant form of anisotropic magnetoresistance (AMR). This has magnetic field, temperature, and angular dependencies in quantitative accord with conventional AMR, but with AMR ratios up to an extraordinary 40.3%, 20 times enhanced over bulk cobaltites, and ~10–100 times larger than typical transition metals. This giant AMR has no strong dependence on heteroepitaxial strain (between –2.1% and +1.8%) or thickness, and is instead ascribed to symmetry lowering associated with $V_\text{O}$ ordering. The AMR ratios thus obtained in this work are among the largest reported in the over 160-year history of this phenomenon, despite the absence of heavy elements.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Spatially correlated incommensurate lattice modulations in an atomically thin high-temperature Bi 2.1 Sr 1.9 CaCu 2.0 O 8+y superconductor

Strong variations in superconducting critical temperatures in different families of the cuprate perovskites, even with similar hole doping in their copper-oxygen planes, suggest the importance of lattice modulation effects. The one-dimensional incommensurate lattice modulation (ILM) of Bi 2 Sr 2 CaCu 2 O 8+y , with the average atomic positions perturbed beyond the unit cell6, offer s an ideal test ground for studying the interplay between superconductivity and the long-range incommensurate lattice fluctuations. Here we report Scanning nano X-ray Diffraction (SnXRD) imaging of incommensurate lattice modulations in Bi 2 Sr 2 CaCu 2 O 8+y Van der Waals heterostructures of thicknesses down to two-unit cells. Using SnXRD, we probe that the long-range and short-range incommensurate lattice modulations in bulk sample surface with spatial resolution below 100 nm. We find that puddle-like domains of ILM of size uniformly evolving with dimensionality. In the 2-unit cell thin sample, it is observed that the wavevectors of the long- and short-range orders become anticorrelated with emerging spatial patterns having a directional gradient. The emerging patterns, originated by tiny tuning of lattice strain, induce static mesoscopic charge density waves. Finally, our findings thus demonstrate that the strain can be used to tune and control the electromagnetic properties of two-dimensional high-temperature superconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium Green function approach

The spin-mixing conductance (SMC) is a key quantity determining efficiency of spin transport across interfaces. Thus, knowledge of its precise value is required for accurate measurement of parameters quantifying numerous effects in spintronics, such as spin-orbit torque, spin Hall magnetoresistance, spin Hall effect, and spin pumping. However, the standard expression for SMC, provided by the scattering theory in terms of the reflection probability amplitudes, is inapplicable when strong spin-orbit coupling (SOC) is present directly at the interface. This is the precisely the case of topological-insulator/ferromagnet and heavy-metal/ferromagnet interfaces of great contemporary interest. We introduce an approach where first-principles Hamiltonian of these interfaces, obtained from noncollinear density functional theory (ncDFT) calculations, is combined with charge-conserving Floquet-nonequilibrium-Green-function formalism to compute directly the pumped spin current $I^{S_z}_L$ into semi-infinite left lead of two-terminal heterostructures Cu/X/Co/Cu or Y/Co/Cu—where X = Bi 2 Se 3 and Y = Pt or W—due to microwave-driven steadily precessing magnetization of the Co layer. This allows us to extract an effective SMC as a prefactor in $I^{S_z}_L$ versus precession cone angle θ dependence, as long as it remains the same, $I^{S_z}$ ∝ sin 2 θ , as in the case where SOC is absent. By comparing calculations where SOC in switched off versus switched on in ncDFT calculations, we find that SOC consistently reduces the pumped spin current and therefore the effective SMC.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Charge-spin interconversion in epitaxial Pt probed by spin-orbit torques in a magnetic insulator

We measure spin-orbit torques (SOTs) in a model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt film acts as the sole source of charge-to-spin conversion. A small fieldlike SOT independent of Pt thickness suggests a weak Rashba-Edelstein effect at the ferrite/Pt interface. By contrast, we observe a sizable dampinglike SOT that depends on the Pt thickness, from which we deduce the dominance of an extrinsic spin-Hall effect (skew scattering) and Dyakonov-Perel spin relaxation in the crystalline Pt film. Furthermore, our results point to a large internal spin-Hall ratio of ≈ 0.8 in epitaxial Pt. Furthermore, our experimental work takes an essential step towards understanding the mechanisms of charge-spin interconversion and SOTs in Pt-based heterostructures, which are crucial for power-efficient spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Probing exchange bias at the surface of a doped ferrimagnetic insulator

With the realization of stress-induced perpendicular magnetic anisotropy, efficient spin-orbit torque switching, and room temperature topological Hall effect, interest in rare earth iron garnets has been revived in recent years for their potential in spintronic applications. In this study, we investigate the magnetic properties of micrometer-thick Bi and Ga substituted thulium iron garnets (BiGa:TmIG) grown by the liquid-phase epitaxy method. Above the magnetization compensation (MC) temperature, anomalous triple hysteresis is observed in BiGa:TmIG/Pt heterostructures by anomalous Hall effect measurements. X-ray magnetic circular dichroism and energy dispersive spectroscopy measurements reveal its origin as an internal exchange bias (EB) effect arising from inhomogeneities localized at the surface of the film. Possibly depending on the difference in thickness and defect realization of the EB layer, two types of magnetization reversal mechanisms, namely, the Stoner-Wohlfarth type and the reversible domain-wall motion type, are observed. Furthermore, our results show that rich meta-magnetic phases exist in garnets close toMC, which can be robustly tuned by chemical composition engineering and conveniently probed by electrical transport measurements.

36 MATERIALS SCIENCE↗