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At least 1,495 records · Page 83
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Attenuation of Spin Precession in Manganite/Normal Metal Heterostructures

Abstract—Temperature dependence of attenuation of magnetic spin precession in two-layer structures with a Pt top layer based on a La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) epitaxial manganite film is studied by measuring the width of a ferromagnetic resonance (FMR) line. Ferromagnetic resonance in thin ferromagnetic manganite films is used for the creation of a spin current at the interface between the metallic and ferromagnetic layers. A significant increase in a width of a line in FMR spectrum in two-layer structures due to generation of a spin current, heterogeneity of a ferromagnetic layer, two-magnon scattering, and eddy current is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Large resistance change on magnetic tunnel junction based molecular spintronics devices

Here, molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies provided insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.

36 MATERIALS SCIENCE↗
DOE OSTI2013

The magnetic structure of Co(NCNH)₂ as determined by (spin-polarized) neutron diffraction

The magnetic structure of Co(NCNH)₂ has been studied by neutron diffraction data below 10 K using the SPODI and DNS instruments at FRM II, Munich. There is an intensity change in the (1 1 0) and (0 2 0) reflections around 4 K, to be attributed to the onset of a magnetic ordering of the Co²⁺ spins. Four different spin orientations have been evaluated on the basis of Rietveld refinements, comprising antiferromagnetic as well as ferromagnetic ordering along all three crystallographic axes. Both residual values and supplementary susceptibility measurements evidence that only a ferromagnetic ordering with all Co²⁺ spins parallel to the c axis is a suitable description of the low-temperature magnetic ground state of Co(NCNH)₂. The deviation of the magnetic moment derived by the Rietveld refinement from the expectancy value may be explained either by an incomplete saturation of the moment at temperatures slightly below the Curie temperature or by a small Jahn–Teller distortion. - Graphical abstract: The magnetic ground state of Co(NCNH)₂ has been clarified by (spin-polarized) neutron diffraction data at low temperatures. Intensity changes below 4 K arise due to the onset of ferromagnetic ordering of the Co²⁺ spins parallel to the c axis, corroborated by various (magnetic) Rietveld refinements. Highlights: • Powderous Co(NCNH)₂ has been subjected to (spin-polarized) neutron diffraction. • Magnetic susceptibility data of Co(NCNH)₂ have been collected. • Below 4 K, the magnetic moments align ferromagnetically with all Co²⁺ spins parallel to the c axis. • The magnetic susceptibility data yield an effective magnetic moment of 4.68 and a Weiss constant of -13(2) K. • The ferromagnetic Rietveld refinement leads to a magnetic moment of 2.6 which is close to the expectancy value of 3.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Magnetic order and crystal structure study of YNi{sub 4}Si-type NdNi{sub 4}Si

Magnetic measurements and neutron powder diffraction investigation of the magnetic structure of the orthorhombic YNi{sub 4}Si-type (space group Cmmm) NdNi{sub 4}Si compound are presented. The magnetocaloric effect of NdNi{sub 4}Si is calculated in terms of the isothermal magnetic entropy change and it reaches the maximum value of –3.3 J/kg K for a field change of 50 kOe near T{sub C}=12 K. Below ∼12 K, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group in a zero magnetic field. At 1.5 K, the neodymium atoms have the magnetic moment of 2.37(5) μ{sub B}. The orthorhombic crystal structure and its thermal evolution are discussed in comparison with the CaCu{sub 5}-type compound. - Graphical abstract: The NdNi{sub 4}Si supplement the series of the orthorhombic derivative of the CaCu{sub 5}-type, namely the YNi{sub 4}Si-type, RNi{sub 4}Si compounds (R=Y, La, Ce, Sm, Gd–Ho). Below ∼12 K in a zero applied magnetic field, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group. Compared to the CaCu{sub 5}-type NdNi{sub 4}Si compound, the YNi{sub 4}Si-type counterpart has the relatively high ferromagnetic ordering temperature (9.2 K vs. 12 K), the small magnetocaloric effect (–7.3 J/kg K vs. –3.3 J/kg K for ∆H=50 kOe), and the large magnetic anisotropy at low temperatures. In contrast with CaCu{sub 5}-type NdNi{sub 4}Si, YNi{sub 4}Si-type NdNi{sub 4}Si shows distinct hysteresis loop at 2 K.We suggest that orthorhombic distortion may be used as a prospective route for optimization of permanent magnetic properties in the family of CaCu{sub 5}-type rare earth materials. - Highlights: • Below ∼12 K the YNi{sub 4}Si-type NdNi{sub 4}Si shows a ferromagnetic ordering. • MCE of NdNi{sub 4}Si reaches value of –3.3 J/kg K in 0–50 kOe near Curie point. • NdNi{sub 4}Si exhibits b-axis ferromagnetic order with the Cmm′m magnetic space group. • Contrary to CaCu{sub 5}-type, YNi{sub 4}Si-type NdNi{sub 4}Si shows hysteresis loop at 2 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

An ab initio study of the adsorption of Eu 3+ , Pu 3+ , Am 3+ , and Cm 3+ hydroxide complexes on hematite (001) surface: Role of magnetism on adsorption

Inner-sphere hydroxide complexes of Eu 3+ , Pu 3+ , Am 3+ , and Cm 3+ adsorbed to antiferromagnetic and ferromagnetic hematite (001) surfaces were modeled by using DFT (GGA+U) calculations in order to compare the electronic properties, atomic structures, and adsorption energies between the trivalent actinide analog Eu 3+ and the corresponding actinides An 3+ . Eu 3+ forms a tridentate–binuclear surface complex on the hematite surface with an Eu–Fe distance of 3.4–3.8 Å. Eu 3+ is partially reduced upon adsorption, as indicated by the increase of original Eu 3+ spin value from 6 to ~7. Eu 3+ adsorption on the ferromagnetic surface is energetically more favorable than on the antiferromagnetic surface, while the opposite is the case for all actinides An 3+ . When retaining a similar adsorption configuration (e.g., coordination number = 6), An 3+ cations are adsorbed ~0.2 Å closer to the surface compared to Eu 3+ . Partial density of states analyses indicate ionic bonding between O ions on the hematite surface and the Eu 3+ /An 3+ adsorbates. An increasing number of bands above the Fermi energy were found when Eu 3+ and An 3+ were adsorbed to the ferromagnetic surface but not on the antiferromagnetic surface, indicating the ferromagnetic substrate becomes more semiconducting upon cation adsorption. Here, these results show that the spin configurations of the hematite (001) surface have a weak but distinct influence on the cation adsorption energy. Although the antiferromagnetic spin configuration of hematite is dominant in nature, metastable ferromagnetic domains on nanohematite grains may influence the energetics of certain cation adsorption reactions.

42 ENGINEERING↗
DOE OSTI2025

Predicting Quantum Criticality in Single-Crystalline Ce 2 Ru 3 Ge 5

Strongly correlated f-electron systems are known to host exotic quantum states, such as quantum criticality, complex order parameters, and unconventional superconductivity. However, the appearance of these exotic states is difficult to predict, making the study of quantum critical behavior challenging, especially in ferromagnetic materials. Herein, we report a structure–property map for Ce 2 M 3 X 5 (M = transition metal; X = main group element) that aids in the targeted design of materials likely to exhibit quantum criticality. Guided by this map, we report on the synthesis of single-crystalline Ce 2 Ru 3 Ge 5 and provide, for the first time, magnetic susceptibility, heat capacity, resistivity, and magnetoresistance measurements on single crystals. Here, we observe a weak ferromagnetic-like response at 7.5 K, which is contrasted with the bulk ferromagnetic ordering that appears in polycrystalline samples. Non-Fermi liquid behavior is seen in the temperature dependent electrical resistivity and heat capacity of the single crystals, suggesting proximity to a ferromagnetic quantum critical point without chemical or physical pressure. Given the contrast with previous reports of polycrystals, these results lead us to propose that single crystalline Ce 2 Ru 3 Ge 5 is intrinsically tuned into the vicinity of a ferromagnetic quantum critical point.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Domain state exchange bias in a single layer FeRh thin film formed via low energy ion implantation

Modern spintronics relies heavily on the exchange bias effect to pin the orientation of ferromagnetic layers in magnetic tunnel junctions. The current implementations of exchange bias in magnetic tunnel junctions employ pristine interfaces between antiferromagnetic and ferromagnetic layers. Here we reveal an interfacial exchange bias introduced by a single-step, low-energy ion implantation process in a single layer FeRh thin film. Both 1 keV He + ions and 5 keV Fe + were investigated, their energy selected to ensure the ions would stop within the FeRh film. The ions reduce the metamagnetic transition temperature through defect generation to form a surface layer with ferromagnetic ordering. Temperature dependent magnetism measurements reveal a room temperature exchange bias between the ferromagnetic surface and the antiferromagnetic bulk of ~41 Oe in 5 keV Fe + implanted samples and ~36 Oe for 1 keV He + implanted samples. We directly scrutinize this exchange bias effect in magnetic depth profiles obtained by polarized neutron reflectometry which clearly show a pinned ferromagnetic layer adjacent to the disordered layer created by low energy Fe + ion implantation. These results reveal a novel method to implement exchange bias in an antiferromagnetic layer that can have direct application in the field of spintronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Metal to semiconductor transition in metallic transition metal dichalcogenides

We report on tuning the electronic and magnetic properties of metallic transition metal dichalcogenides (mTMDCs) by 2D to 1D size confinement. The stability of the mTMDC monolayers and nanoribbons is demonstrated by the larger binding energy compared to the experimentally available semiconducting TMDCs. The 2D MX{sub 2} (M = Nb, Ta; X = S, Se) monolayers are non-ferromagnetic metals and mechanically softer compared to their semiconducting TMDCs counterparts. Interestingly, mTMDCs undergo metal-to-semiconductor transition when the ribbon width approaches to ∼13 Å and ∼7 Å for zigzag and armchair edge terminations, respectively; then these ribbons convert back to metal when the ribbon widths further decrease. Zigzag terminated nanoribbons are ferromagnetic semiconductors, and their magnetic properties can also be tuned by hydrogen edge passivation, whereas the armchair nanoribbons are non-ferromagnetic semiconductors. Our results display that the mTMDCs offer a broad range of physical properties spanning from metallic to semiconducting and non-ferromagnetic to ferromagnetic that is ideal for applications where stable narrow bandgap semiconductors with different magnetic properties are desired.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electronic and magnetic transitions in perovskite SrRu{sub 1-x}Ir{sub x}O{sub 3} thin films

We have investigated the electronic and magnetic properties of perovskite SrRu{sub 1−x}Ir{sub x}O{sub 3} (0.0≤ x ≤ 0.25) thin films grown by pulsed laser deposition on atomically flat (001) SrTiO{sub 3} substrates. SrRuO{sub 3} has the properties of a ferromagnetic metal (resistivity ρ ∼ 200 μΩ · cm at T = 300 K) with Curie temperature T{sub C} ∼ 150 K. Substituting Ir (5d{sup 5+}) for Ru (4d{sup 4+}) in SrRuO{sub 3}, films (0.0 ≤ x ≤ 0.20) showed fully metallic behavior and ferromagnetic ordering, although ρ increased and the ferromagnetic T{sub C} decreased. Films with x = 0.25 underwent the metal-to-insulator transition (T{sub MIT}∼75 K) in ρ, and spin-glass-like ordering (T{sub SG}∼45 K) with the elimination of ferromagnetic long-range ordering caused by the electron localization at the substitution sites. In ferromagnetic films (0.0 ≤ x ≤ 0.20), ρ increased near-linearly with T at T > T{sub C}, but in paramagnetic film (x = 0.25) ρ increased as T{sup 3/2} at T > T{sub MIT}. Moreover, observed spin-glass-like (T{sub SG}) ordering with the negative magnetoresistance at T < T{sub MIT} in film with x = 0.25 validates the hypothesis that (Anderson) localization favors glassy ordering at amply disorder limit. These observations provide a promising approach for future applications and of fundamental interest in 4d and 5d mixed perovskites.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Correlation between magnetostriction and magnetic structure in pseudobinary compounds Tb(Co 1-x Fe x ) 2

Giant low-field magnetostriction has been achieved in pseudobinary Laves phase compounds RR’T 2 (R and R’: rare earth elements; T: transition metal elements) around the ferromagnetic - ferromagnetic (ferro.-ferro.) transition temperature. Evolution of the magnetic structure across such transition requires comprehensive investigation. In this work, pseudobinary system Tb(Co 1-x Fe x ) 2 is selected to investigate the evolution of local magnetic moment, for which two end terminals TbCo 2 and TbFe 2 possess the rhombohedral (R) structure at the ferromagnetic state but with different magnetic ordering temperatures (T C ). Magnetometry measurements reveal that a composition independent ferromagnetic - ferromagnetic transition occurs at ~100 K despite the increased Curie temperature T C with raised Fe concentration in the Tb(Co 1-x Fe x ) 2 . Synchrotron XRD data reveal that both the lattice parameter and the lattice strain along the <111> direction are abnormally temperature dependent, accompanied with experimentally observed magnetostriction abnormality at 100 K. In-situ neutron powder diffraction (NPD) results show that the local magnetic moments of T2 (9e site) atoms are also abnormally temperature dependent, which is larger at 100 K than that at a lower temperature 50 K. Such findings indicate close correlations between the magnetic structure and the magnetostrictive effect in the pseudobinary RT 2 compounds.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Computational search for itinerant n -type and p -type magnetic semiconductors: Arsenopyrites as bipolar magnetic semiconductors

We report a computational search for three-dimensional bulk ferromagnetic semiconductors based on itinerant Stoner physics. Stoner-based ferromagnetic semiconductors require an unusual combination of high band edge density of states and moderate transport effective mass. Nonetheless, several potential materials are found. Here, we identify arsenopyrites, exemplified by FeAsS, as materials that, with suitable doping, exhibit ferromagnetic semiconducting behavior for both n- and p-type dopants. The existence of a material that becomes ferromagnetic for both p and n types may enable device concepts, for example, ferromagnetic p–n junction devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Competing magnetic and nonmagnetic states in monolayer VSe 2 with charge density wave

The field of two-dimensional ferromagnets has been reinvigorated by the discovery of VSe 2 monolayer grown on van der Waals substrates, which is reported to be ferromagnetic with a Curie point higher than 330 K. However, the ferromagnetic and nonmagnetic states of pristine monolayer VSe 2 are highly debated. Here, employing density functional theory, Wannier function calculations, and the band unfolding method, we explore the electronic structure of monolayer VSe 2 with a $\sqrt{3} × \sqrt{7}$ charge density wave (CDW). Certain qualitative aspects of the calculated unfolded band dispersion and unfolded Fermi surface of monolayer VSe 2 with the $\sqrt{3} × \sqrt{7}$ CDW in the nonmagnetic state agree well with previous angle-resolved photoemission spectroscopy results, albeit with uncertainty about whether these experiments probed single or multiple domains. Specifically, we find that an isolated CDW domain naturally induces a strong breaking of the threefold symmetry of the electronic structure. In addition we find that, relative to the undistorted structure, the CDW structure shows a strong competition between nonmagnetic and various magnetic states, with an energy difference less than 5 meV/f.u. For the CDW structure in the antiferromagnetic state, the band dispersions and Fermi surface are similar to those in the nonmagnetic state, while the unfolded bands of the ferromagnetic CDW state display a sizable exchange splitting. These results indicate the possibility of various antiferromagnetic fluctuations in VSe 2 to coexist and compete with ferromagnetic order and the experimentally reported CDW order. In this work, our calculations build insights for exploring the interplay between magnetism and CDW behaviors more generally in transition metal dichalcogenides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Local atomic and magnetic structure of dilute magnetic semiconductor ( Ba , K ) ( Zn , Mn ) 2 As 2

We studied the atomic and magnetic structure of the dilute ferromagnetic semiconductor system (Ba,K)(Zn,Mn) 2 As 2 through atomic and magnetic pair distribution function analysis of temperature-dependent x-ray and neutron total scattering data. Furthermore, we detected a change in curvature of the temperature-dependent unit cell volume of the average tetragonal crystallographic structure at a temperature coinciding with the onset of ferromagnetic order. We also observed the existence of a well-defined local orthorhombic structure on a short length scale of ≲5Å, resulting in a rather asymmetrical local environment of the Mn and As ions. Finally, the magnetic PDF revealed ferromagnetic alignment of Mn spins along the crystallographic c axis, with robust nearest-neighbor ferromagnetic correlations that exist even above the ferromagnetic ordering temperature. Finally, we discuss these results in the context of other experiments and theoretical studies on this system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor ( B a 1 - x K x ) ( Z n 1 - y M n y ) 2 A s 2

We investigate doping- and pressure-induced changes in the electronic state of Mn 3d and As 4p orbitals in II-II-V based diluted magnetic semiconductor (Ba 1-x ,K x )(Zn 1-y ,Mn y ) 2 As 2 to shed light into the mechanism of indirect exchange interactions leading to high ferromagnetic ordering temperature (T c = 230 K in optimally doped samples). A suite of x-ray spectroscopy experiments (emission, absorption and dichroism) show that the emergence, and further enhancement of ferromagnetic interactions with increased hole doping into the As 4p band is accompanied by a decrease in local 3d spin density at Mn sites. This is a result of increasing Mn 3d - As 4p hybridization with hole doping which enhances indirect exchange interactions between Mn dopants and gives rise to induced magnetic polarization in As 4p states. On the contrary, application of pressure suppresses exchange interactions. While Mn Kβ emission spectra show a weak response of 3d state to pressure, clear As 4p band broadening (hole delocalization) is observed under pressure ultimately leading to loss of ferromagnetism concomitant with a semiconductor to metal transition. The pressure response of As 4p and Mn 3d states is intimately connected with the evolution of the As-As interlayer distance and the geometry of the MnAs 4 tetrahedral units, which we probed with X-ray diffraction. Our results indicate that hole doping increases the degree of covalency between the anion (As) p states and cation (Mn) d states in the MnA s4 tetrahedron, a crucial ingredient to promote indirect exchange interactions between Mn dopants and high T c ferromagnetism. As a result, the instability of ferromagnetism and semiconducting state against pressure is mainly dictated by delocalization of anion p states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Electron Accumulation and Emergent Magnetism in LaMnO 3 /SrTiO 3 Heterostructures

Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here in this paper we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO$_{3}$/SrTiO$_{3}$ (001) heterostructures. Using a combination of element-specific x-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation, and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO$_{3}$. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron overaccumulation. In turn, by controlling the doping of the LaMnO$_{3}$, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO$_{3}$ films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Magnetic-Competition-Induced Colossal Magnetoresistance in $n$-Type $\mathrm{HgCr_2Se_4}$ Under High Pressure

The $n$-type HgCr 2 $\mathrm{Se_4}$ exhibits a sharp semiconductor-to-metal transition (SMT) in resistivity accompanying the ferromagnetic order at ${T_C}$ = 106 K . Here, we investigate the effects of pressure and magnetic field on the concomitant SMT and ferromagnetic order by measuring resistivity, dc and ac magnetic susceptibility, as well as single-crystal neutron diffraction under various pressures up to 8 GPa and magnetic fields up to 8 T. Our results demonstrate that the ferromagnetic metallic ground state of $n$-type HgCr 2 $\mathrm{Se_4}$ is destabilized and gradually replaced by an antiferromagnetic, most likely a spiral magnetic, and insulating ground state upon the application of high pressure. On the other hand, the application of external magnetic fields can restore the ferromagnetic metallic state again at high pressures, resulting in a colossal magnetoresistance (CMR) as high as $\mathrm{~ 3 × 10^{11}}$% under 5 T and 2 K at 4 GPa. The present study demonstrates that $n$-type HgCr 2 $\mathrm{Se_4}$ is located at a peculiar critical point where the balance of competition between ferromagnetic and antiferromagnetic interactions can be easily tipped by external stimuli, providing a new platform for achieving CMR in a single-valent system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Electronic structure and exchange interactions in altermagnetic MnGeP 2 in the quasiparticle self-consistent G W approach

The quasiparticle self-consistent 𝐺⁡𝑊 method is used to study the electronic band structure, optical dielectric function, and exchange interactions in chalcopyrite, 𝐼⁢ ‾ 4 ⁢2⁢𝑑, structure MnGeP 2 . The material is found to be an antiferromagnetic semiconductor with a lowest direct gap of 2.44 eV at the Γ point and a lower indirect gap of 1.87 eV from Γ to 𝑀. The material is an altermagnet because the two magnetic atoms of opposite spin are related by a twofold rotation operation perpendicular to the main fourfold rotation inversion axis. The spin splittings along a low symmetry line like 𝑃⁢𝑁 is sizable while at k points on the diagonal mirror planes or on the twofold symmetry axes the spin splitting is zero. The exchange interactions are calculated using a linear response approach. The antiferromagnetic exchange interaction between nearest neighbors in the primitive unit cell is dominating and found to be slightly decreasing upon carrier doping but not sufficiently to change the interaction to become ferromagnetic. The bare (noninteracting) and interacting transverse spin susceptibilities, which provide interatomic site exchange interactions after averaging over the muffin-tin spheres, are calculated from the 𝐺⁡𝑊 band structure and wave functions. From these exchange interactions, the spin wave spectra are obtained along the high symmetry lines and the Néel temperature is calculated using the mean-field and Tyablikov estimations. The dielectric function and the optical absorption spectra are calculated including excitonic effects using the Bethe Salpeter equation. The exchange interactions around Mn Ge defect sites is also studied. While we find it can generate ferromagnetic interactions with neighboring spins, we did not find direct evidence of producing an overall ferromagnetic phase. First, if Mn antisites are introduced by exchanging Mn with a nearby Ge, the interactions stay largely antiferromagnetic. Second, when we add additional Mn, in other words in Mn-rich stoichiometry, the Mn Ge antisites produce a strong ferromagnetic interaction primarily with the Mn in the same basal plane but weaker ferromagnetic interaction with adjacent plane Mn. The interactions between regular lattice Mn stay antiferromagnetic as before and thus favor keeping the antiferromagnetic order along the [001] direction. Adding Mn antisites, however, does lead to a metallic band structure.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Pressure-Induced Decrease in the Curie Temperature of Gd{sub 2}Fe{sub 17}: LSDA+U Calculations

To explain the magnetic properties of advanced ferromagnetic intermetallic compounds of the R{sub 2}Fe{sub 17} (R is a rare-earth element) class, experimentalists often use the hypothesis of competition between ferromagnetic exchange and antiferromagnetic exchange between four types of the nearest iron atoms in nonequivalent lattice sites. For the rhombohedral Gd{sub 2}Fe{sub 17} ferromagnet, we calculate the magnetic moments of iron and gadolinium ions, the parameters of exchange between Fe atoms, and Curie temperature T{sub C} at a zero pressure and during hydrostatic lattice compression. The magnetic moment of the unit cell of Gd{sub 2}Fe{sub 17} is shown to decrease under pressure, and this decrease is almost completely associated with a decrease in the magnetic moments of Fe rather than Gd ions, the pressure dependence of the magnetic moments of which is weaker by an order of magnitude. In contrast to the hypothesis regarding the competition of exchange interactions between different kinds of Fe atoms, the parameters of exchange between the nearest iron atoms in different crystallographic sites are found to be positive ferromagnetic (at a zero pressure and during compression), and a ferromagnetic character of interaction is shown to remain unchanged under pressure even for Fe atoms in the so-called dumbbell sites with the nearest interatomic distances. The Curie temperature T{sub C} of Gd{sub 2}Fe{sub 17} is shown to decrease with increasing pressure. The changes in the exchange parameters and the magnetic moments of Gd{sub 2}Fe{sub 17} during compression are found to be mainly related to a change in the position of energy spectrum branches with respect to each other and the Fermi level ϵ{sub F} rather than to a change in the overlapping of wavefunctions, which play a minor role.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗