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At least 1,495 records · Page 83
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DOE OSTI2015

Modeling of photocurrent and lag signals in amorphous selenium x-ray detectors

A mathematical model for transient photocurrent and lag signal in x-ray imaging detectors has been developed by considering charge carrier trapping and detrapping in the energy distributed defect states under exponentially distributed carrier generation across the photoconductor. The model for the transient and steady-state carrier distributions and hence the photocurrent has been developed by solving the carrier continuity equation for both holes and electrons. The residual (commonly known as lag signal) current is modeled by solving the trapping rate equations considering the thermal release and trap filling effects. The model is applied to amorphous selenium (a-Se) detectors for both chest radiography and mammography. The authors analyze the dependence of the residual current on various factors, such as x-ray exposure, applied electric field, and temperature. The electron trapping and detrapping mostly determines the residual current in a-Se detectors. The lag signal is more prominent in chest radiographic detector than in mammographic detectors. The model calculations are compared with the published experimental data and show a very good agreement.

42 ENGINEERING↗
DOE OSTI2014

TU-F-18C-02: Increasing Amorphous Selenium Thickness in Direct Conversion Flat-Panel Imagers for Contrast-Enhanced Dual-Energy Breast Imaging

Purpose: Contrast-enhanced (CE) breast imaging using iodinated contrast agents requires imaging with x-ray spectra at energies greater than those used in mammography. Optimizing amorphous selenium (a-Se) flat panel imagers (FPI) for this higher energy range may increase lesion conspicuity. Methods: We compare imaging performance of a conventional FPI with 200 μm a-Se conversion layer to a prototype FPI with 300 μm a-Se layer. Both detectors are evaluated in a Siemens MAMMOMAT Inspiration prototype digital breast tomosynthesis (DBT) system using low-energy (W/Rh 28 kVp) and high-energy (W/Cu 49 kVp) x-ray spectra. Detectability of iodinated lesions in dual-energy images is evaluated using an iodine contrast phantom. Effects of beam obliquity are investigated in projection and reconstructed images using different reconstruction methods. The ideal observer signal-to-noise ratio is used as a figure-of-merit to predict the optimal a-Se thickness for CE lesion detectability without compromising conventional full-field digital mammography (FFDM) and DBT performance. Results: Increasing a-Se thickness from 200 μm to 300 μm preserves imaging performance at typical mammographic energies (e.g. W/Rh 28 kVp), and improves the detective quantum efficiency (DQE) for high energy (W/Cu 49 kVp) by 30%. While the more penetrating high-energy x-ray photons increase geometric blur due to beam obliquity in the FPI with thicker a-Se layer, the effect on lesion detectability in FBP reconstructions is negligible due to the reconstruction filters employed. Ideal observer SNR for CE objects shows improvements in in-plane detectability with increasing a-Se thicknesses, though small lesion detectability begins to degrade in oblique projections for a-Se thickness above 500 μm. Conclusion: Increasing a-Se thickness in direct conversion FPI from 200 μm to 300 μm improves lesion detectability in CE breast imaging with virtually no cost to conventional FFDM and DBT. This work was partially supported by a research grant from Siemens Healthcare.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

WE-E-18A-01: Large Area Avalanche Amorphous Selenium Sensors for Low Dose X-Ray Imaging

Purpose: A large area indirect flat panel imager (FPI) with avalanche gain is being developed to achieve x-ray quantum noise limited low dose imaging. It uses a thin optical sensing layer of amorphous selenium (a-Se), known as High-Gain Avalanche Rushing Photoconductor (HARP), to detect optical photons generated from a high resolution x-ray scintillator. We will report initial results in the fabrication of a solid-state HARP structure suitable for a large area FPI. Our objective is to establish the blocking layer structures and defect suppression mechanisms that provide stable and uniform avalanche gain. Methods: Samples were fabricated as follows: (1) ITO signal electrode. (2) Electron blocking layer. (3) A 15 micron layer of intrinsic a-Se. (4) Transparent hole blocking layer. (5) Multiple semitransparent bias electrodes to investigate avalanche gain uniformity over a large area. The sample was exposed to 50ps optical excitation pulses through the bias electrode. Transient time of flight (TOF) and integrated charge was measured. A charge transport simulation was developed to investigate the effects of varying blocking layer charge carrier mobility on defect suppression, avalanche gain and temporal performance. Results: Avalanche gain of ∼200 was achieved experimentally with our multi-layer HARP samples. Simulations using the experimental sensor structure produced the same magnitude of gain as a function of electric field. The simulation predicted that the high dark current at a point defect can be reduced by two orders of magnitude by blocking layer optimization which can prevent irreversible damage while normal operation remained unaffected. Conclusion: We presented the first solid state HARP structure directly scalable to a large area FPI. We have shown reproducible and uniform avalanche gain of 200. By reducing mobility of the blocking layers we can suppress defects and maintain stable avalanche. Future work will optimize the blocking layers to prevent lag and ghosting.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

The effect of amorphous selenium detector thickness on dual-energy digital breast imaging

Purpose: Contrast enhanced (CE) imaging techniques for both planar digital mammography (DM) and three-dimensional (3D) digital breast tomosynthesis (DBT) applications requires x-ray photon energies higher than the k-edge of iodine (33.2 keV). As a result, x-ray tube potentials much higher (>40 kVp) than those typical for screening mammography must be utilized. Amorphous selenium (a-Se) based direct conversion flat-panel imagers (FPI) have been widely used in DM and DBT imaging systems. The a-Se layer is typically 200 μm thick with quantum detective efficiency (QDE) >87% for x-ray energies below 26 keV. However, QDE decreases substantially above this energy. To improve the object detectability of either CE-DM or CE-DBT, it may be advantageous to increase the thickness (d{sub Se}) of the a-Se layer. Increasing the d{sub Se} will improve the detective quantum efficiency (DQE) at the higher energies used in CE imaging. However, because most DBT systems are designed with partially isocentric geometries, where the gantry moves about a stationary detector, the oblique entry of x-rays will introduce additional blur to the system. The present investigation quantifies the effect of a-Se thickness on imaging performance for both CE-DM and CE-DBT, discussing the effects of improving photon absorption and blurring from oblique entry of x-rays. Methods: In this paper, a cascaded linear system model (CLSM) was used to investigate the effect of d{sub Se} on the imaging performance (i.e., MTF, NPS, and DQE) of FPI in CE-DM and CE-DBT. The results from the model are used to calculate the ideal observer signal-to-noise ratio, d′, which is used as a figure-of-merit to determine the total effect of increasing d{sub Se} for CE-DM and CE-DBT. Results: The results of the CLSM show that increasing d{sub Se} causes a substantial increase in QDE at the high energies used in CE-DM. However, at the oblique projection angles used in DBT, the increased length of penetration through a-Se introduces additional image blur. The reduced MTF and DQE at high spatial frequencies lead to reduced two-dimensional d′. These losses in projection image resolution may subsequently result in a decrease in the 3D d′, but the degree of which is largely dependent on the DBT reconstruction algorithm. For a filtered backprojection (FBP) algorithm with spectral apodization and slice-thickness filters, which dominate the blur for reconstructed images at oblique angles, the effect of oblique entry of x-rays on 3D d′ is minimal. Thus, increasing d{sub Se} results in an improvement in d′ for both CE-DM and CE-DBT with typical FBP reconstruction parameters. Conclusions: Increased d{sub Se} improves CE breast imaging performance by increasing QDE of detectors at higher energies, e.g., 49 kVp. Although there is additional blur in the oblique angled projections of a DBT scan, the overall 3D d′ for DBT is not degraded because the dominant source blur at these angles results from the reconstruction filters of the employed FBP algorithm.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

MO-AB-BRA-07: Low Dose Imaging with Avalanche Amorphous Selenium Flat Panel Imager

Purpose: We present the first active matrix flat panel imager (AMFPI) capable of producing x-ray quantum noise limited images at low doses by overcoming the electronic noise through signal amplification by photoconductive avalanche gain (gav). The indirect detector fabricated uses an optical sensing layer of amorphous selenium (a-Se) known as High-Gain Avalanche Rushing Photoconductor (HARP). The detector design is called Scintillator HARP (SHARP)-AMFPI. This is the first image sensor to utilize solid-state HARP technology. Methods: The detector’s electronic readout is a 24 × 30 cm{sup 2} array of thin film transistors (TFT) with a pixel pitch of 85 µm. The HARP structure consists of a 15 µm layer of a-Se isolated from the high voltage (HV) and signal electrode by a 2 µm thick hole blocking layer and electron blocking layer, respectively, to reduce dark current. A 150 µm thick structured CsI scintillator with reflective backing and a fiber optic faceplate (FOP) was coupled to the semi-transparent HV bias electrode of the HARP structure. Images were acquired using a 30 kVp Mo/Mo spectrum typically used in mammography. Results: Optical sensitivity measurements demonstrate that gav = 76 ± 5 can be achieved over the entire active area of the detector. At a constant dose to the detector of 6.67 µGy, image quality increases with gav until the effective electronic noise is negligible. Quantum noise limited images can be obtained with doses as low as 0.18 µGy. Conclusion: We demonstrate the feasibility of utilizing avalanche gain to overcome electronic noise. The indirect detector fabricated is the first solid-state imaging sensor to use HARP, and the largest active area HARP sensor to date. Our future work is to improve charge transport within the HARP structure and utilize a transparent HV electrode.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2018

Synthesis of Porous Composite Materials via Combustion of a Mixture of Titanium, VT6 Alloy, and Amorphous Boron Powders

Self-propagating high-temperature synthesis without preheating has been realized in powder mixtures consisting of large spherical VT6 titanium alloy granules, small dendritic titanium particles, and black amorphous boron. Synthesis in a combustion wave involved a few steps: first, boron reacted with fine-particle titanium to form a boride matrix, which then reacted with molten VT6 titanium alloy granules. We have obtained a porous metal–ceramic material similar in structure to composites.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Study of the amorphization of surface silicon layers implanted by low-energy helium ions

The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2–5)-keV helium ions to a dose of D = 6 × 10{sup 15}–5 × 10{sup 17} cm{sup –2} have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ(z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 10{sup 16} cm{sup –2} leads to the formation of a 20- to 30-nm-thick amorphized surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Cathodo- and photoluminescence increase in amorphous hafnium oxide under annealing in oxygen

Cathodo- and photoluminescence of amorphous nonstoichiometric films of hafnium oxide are studied with the aim to verify the hypothesis that oxygen vacancies are responsible for the luminescence. To produce oxygen vacancies, hafnium oxide was enriched in surplus metal during synthesis. To reduce the oxygen concentration, the film was annealed in oxygen. A qualitative control of the oxygen concentration was carried out by the refractive index. In the initial, almost stoichiometric films we observed a 2.7-eV band in cathodoluminescence. Annealing in oxygen results in a considerable increase in its intensity, as well as in the appearance of new bands at 1.87, 2.14, 3.40, and 3.6 eV. The observed emission bands are supposed to be due to single oxygen vacancies and polyvacancies in hafnium oxide. The luminescence increase under annealing in an oxygen atmosphere may be a result of the emission quenching effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Structural Transformations of Amorphous Carbon (Glassy Carbon) at High Shock Pressures

Amorphous carbon (glassy carbon) samples were shock compressed up to 80 GPa and temperatures up to 1700 K for several microseconds. Glassy carbon samples before and after an explosive action are analyzed by X-ray diffraction, electron microscopy, and electron-probe microanalysis. It is shown that as a result of microsecond shock pressure exposure, glassy carbon is compacted to ρ{sub CG} ≈ 2.3(5) g/cm{sup 3} and is partly transformed into a graphite-like nanomaterial with a cellular structure. At the level of crystallites, the density of glassy carbon increases via a decrease in the interplanar spacings and an increase in the crystallite thickness and width. Spheres from 20 nm to 80 μm in diameter are found to be formed during shock-wave compression of glassy carbon in a copper container and high-temperature shock heating posteffects. Spheres 20 μm in diameter consist of a copper-rich core and a carbon shell.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Role of the Cluster Structure of Amorphous Fe{sub 67}Cr{sub 18}B{sub 15} Alloy in Magnetism and in the Changing of Electron Scattering Mechanisms under the Influence of Ion (Ar{sup +}) Irradiation

The contribution of clusters of different sizes to magnetism and the switching of electron scattering mechanisms in amorphous Fe{sub 67}Cr{sub 18}B{sub 15} alloy during ion Ar{sup +} irradiation is studied. The cluster magnetism is found to be related to the presence of clusters of the following two types: large α-(Fe, Cr) clusters of size D = 150–250 Å and small (D = 40–80 Å) clusters in a random intercluster medium. The generation of small ferromagnetic and antiferromagnetic clusters during ion irradiation leads to the formation of cluster glass, which affects the electrical properties of the alloy and causes a magnetic frustration. The temperature dependence of the barrier height is shown to characterize the magnetic state of the alloy in low fields. On the whole, the temperature dependence of the order parameter is a universal characteristic of the system. The temperature dependence of resistivity of initial alloys in the temperature range 98–300 K (ρ(T) ∝ T{sup 2}) is determined by electron scattering by quantum defects, and the transition into a ferromagnetic state is revealed when the derivative ∂ρ/∂T ∝ T is analyzed. The increase in resistivity and the relation ρ ∝ T{sup 1/2} in strongly inhomogeneous samples after irradiation at a dose Φ = 1.5 × 10{sup 18} ions/cm{sup 2} are caused by weak localization effects, and the transition to a ferromagnetic state becomes obvious when the derivative ∂ρ/∂T ∝ T{sup –1/2} is considered. Irradiation by fluence Φ = 3 × 10{sup 18} ions/cm2 induces a giant (twofold) increase in the alloy density, restores the ferromagnetism of large clusters, decreases the resistivity by 37%, and restores the relation ρ(T) ∝ T{sup 2}, which results from the overlapping of the irradiation-induced small clusters when their concentration increases and from an increase in the alloy density. The overlapping of clusters lowers the barrier height and decreases the sensitivity of the alloy to an applied field. The relation ρ(T) ∝ T{sup 2} is valid for the entire temperature range T = 2–300 K because of the partial screening of the magnetic moments of large clusters by a medium having the properties of cluster glass.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Crystallization of hydrogenated amorphous silicon films by exposure to femtosecond pulsed laser radiation

To crystallize hydrogenated amorphous silicon films on glass substrates, pulsed Ti-sapphire laser radiation is used, with a pulse duration less than 30 fs. The initial films are grown by plasma-enhanced chemical-vapor deposition at the temperatures 200 and 250 Degree-Sign C. The structural properties of the initial films and films treated with laser radiation pulses are studied by Raman spectroscopy. The conditions for complete crystallization of the films grown on glass substrates to thicknesses of up to 100 nm and hydrogen content of up to 20 at % are established. The conditions provide the fabrication of highly homogeneous films by scanning laser treatments. It is found that, if the hydrogen content in the film is 30-40 at %, the crystallization is an inhomogeneous process and laser ablation is observed in some areas of the films.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane

Hydrogenated amorphous silicon layers with crystalline nanoparticles have been produced by plasma-enhanced chemical vapor deposition, with tetrafluorosilane added to the gas mixture. The photoluminescence kinetics and photoelectric properties of structures based on these layers have been studied. The structures have a substantial photoresponse efficiency in the visible spectral range, with the position of the photoresponse maximum dependent on the applied bias.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Absorption and spectra of optical parameters in amorphous solid solutions of the Se-S system

A study of the optical properties of the Se-S system has revealed a correlation between the dependences of optical absorption coefficient {alpha}, effective concentration of charged defects N{sub t}, and characteristic energy E{sub 0} corresponding to the Urbach optical absorption in the spectral region where the Urbach rule works for the Se-S system on the S concentration. These optical properties are controlled by charged defects. It is shown that concentrations of intrinsic charged defects can be changed by variation in composition of the Se-S system. Reflectance spectra of amorphous solid solutions of the Se-S system are studied within the energy range 1-6 eV. Using the Kramers-Kronig method, spectral dependences of optical constants and derivative optical and dielectric functions are calculated. Variation in the spectra of optical parameters with composition of the Se-S system are explained within a cluster model in which the density of electron states is a function of atomic configurations in clusters, i.e., of the character of a short-range order.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Spectra of optical parameters in bulk and film amorphous alloys of the Se{sub 95}As{sub 5} system containing samarium (Sm) impurities

Reflectance spectra of bulk and film amorphous alloys of the Se{sub 95}As{sub 5} system containing samarium (Sm) impurities are studied in the energy range of 1-6 eV. Spectral dependences of optical constants and derivatives of optical dielectric functions are calculated by the Kramers-Kronig method. Changes in spectra of optical parameters depending on the content of impurities introduced into Se{sub 95}As{sub 5} and conditions of their preparation are explained based on the cluster model. According to the latter, changes in the electron density of states depends on changes in atomic configurations in clusters, i.e., short-range order changes.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90-150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Study of the electronic properties of hydrogenated amorphous silicon films by femtosecond spectroscopy

Experimental results on the electron relaxation time and diffusion coefficient in hydrogenated amorphous silicon films that exhibit intrinsic and electronic conductivity at room temperature are reported. It is found that, for these two types of films, the relaxation times are 1 ns and 465 ps and the diffusion coefficients are 0.54 and 0.83 cm{sup 2} s{sup -1}. It is established that, as the pulse intensity is increased, the decay time of the induced-grating signal shortens.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO{sup x}:H (0 < x < 2)

Published data concerning plasma methods of the fabrication and study of silicon nanoclusters ncl-Si in crystalline (c-SiO{sup 2}) and amorphous (a-SiO{sup x}:H) matrices are reviewed. The effect of radio-fre- quency (RF) and direct-current (dc) discharge modulation on the growth kinetics of ncl-Si is considered. The results of infrared spectroscopy, mass spectrometry, and laser-beam scanning of the plasma composition are analyzed. The behavior of nanoparticles is described depending on their charge and size in plasma under the effect of electric, magnetic, and gravity forces and under the influence of the dynamics of gases contained within the plasma. Infrared spectroscopy data on the a-SiO{sup x}:H film matrix are analyzed. The photoluminescence properties of ncl-Si fabricated using different techniques are described.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Formation of carbon nanotubes on an amorphous Ni{sub 25}Ta{sub 58}N{sub 17} alloy film by chemical vapor deposition

It is shown that it is possible to grow carbon nanotubes on the surface of an amorphous Ni–Ta–N metal alloy film with a low Ni content (~25 at %) by chemical deposition from acetylene at temperature 400–800°C. It is established that the addition of nitrogen into the Ni–Ta alloy composition is favorable for the formation of tantalum nitride and the expulsion of Ni clusters, which act as a catalyst of the growth of carbon nanotubes, onto the surface. From Raman spectroscopy studies, it is found that, as the temperature of synthesis is raised, the quality of nanotubes is improved.

36 MATERIALS SCIENCE↗