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At least 1,477 records · Page 82

Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells

Polarization fields associated with one-monolayer-thick InN/GaN multiple quantum wells (MQWs) cause shifts of the photoluminescence peak that depend on the GaN barrier layer thickness. Diffraction contrast and aberration-corrected scanning transmission electron microscopy show that the InN QWs are well defined and coherently strained. Mapping of electrostatic potential using off-axis electron holography shows that the electric fields inside the GaN barriers decrease from ~0.7 to ~0.2 MV/cm as the barrier layer thickness increases from 5 to 20 nm. Atomistic tight-binding calculations agree closely with experiment, and confirm that changes in optical emission of these III-nitride quantum wells result from changes in the spontaneous and piezoelectric polarization fields in the InN quantum wells and the GaN barrier layers. Overall, this QW system provides the basis for InN-based light-emitting devices operating across a useful band of wavelengths at room temperature.

Zhou, Lin↗

Low-loss electron energy loss spectroscopy: An atomic-resolution complement to optical spectroscopies and application to graphene

Photon-based spectroscopies previously played a central role in exploring the electronic properties of crystalline solids and thin films. They are a powerful tool for probing the electronic properties of nanostructures, but they are limited by lack of spatial resolution. On the other hand, electron-based spectroscopies, e.g., electron energy loss spectroscopy (EELS), are now capable of subangstrom spatial resolution. Core-loss EELS, a spatially resolved analog of x-ray absorption, has been used extensively in the study of inhomogeneous complex systems. In this paper, we demonstrate that low-loss EELS in an aberration-corrected scanning transmission electron microscope, which probes low-energy excitations, combined with a theoretical framework for simulating and analyzing the spectra, is a powerful tool to probe low-energy electron excitations with atomic-scale resolution. The theoretical component of the method combines density functional theory–based calculations of the excitations with dynamical scattering theory for the electron beam. We apply the method to monolayer graphene in order to demonstrate that atomic-scale contrast is inherent in low-loss EELS even in a perfectly periodic structure. The method is a complement to optical spectroscopy as it probes transitions entailing momentum transfer. The theoretical analysis identifies the spatial and orbital origins of excitations, holding the promise of ultimately becoming a powerful probe of the structure and electronic properties of individual point and extended defects in both crystals and inhomogeneous complex nanostructures. The approach can be extended to probe magnetic and vibrational properties with atomic resolution.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Identifying different stacking sequences in few-layer CVD-grown Mo S 2 by low-energy atomic-resolution scanning transmission electron microscopy

We present that atomically thin MoS 2 grown by chemical vapor deposition (CVD) is a promising candidate for next-generation electronics due to inherent CVD scalability and controllability. However, it is well known that the stacking sequence in few-layer MoS 2 can significantly impact electrical and optical properties. Herein we report different intrinsic stacking sequences in CVD-grown few-layer MoS 2 obtained by atomic-resolution annular-dark-field imaging in an aberration-corrected scanning transmission electron microscope operated at 50 keV. Trilayer MoS 2 displays a new stacking sequence distinct from the commonly observed 2H and 3R phases of MoS 2 . Finally, density functional theory is used to examine the stability of different stacking sequences, and the findings are consistent with our experimental observations.

36 MATERIALS SCIENCE↗

Signatures of distinct impurity configurations in atomic-resolution valence electron-energy-loss spectroscopy: Application to graphene

The detection and identification of impurities and other point defects in materials is a challenging task. Signatures for point defects are typically obtained using spectroscopies without spatial resolution. Here in this paper, we demonstrate the power of valence electron-energy-loss spectroscopy (VEELS) in an aberration-corrected scanning transmission-electron microscope (STEM) to provide energy-resolved and atomically resolved maps of electronic excitations of individual impurities which, combined with theoretical simulations, yield unique signatures of distinct bonding configurations of impurities. We report VEELS maps for isolated Si impurities in graphene, which are known to exist in two distinct configurations. We also report simulations of the maps, based on density functional theory and dynamical scattering theory, which agree with and provide direct interpretation of observed features. We show that theoretical VEELS maps exhibit distinct and unambiguous signatures for the threefold- and fourfold-coordinated configurations of Si impurities in different energy-loss windows, corresponding to impurity-induced bound states, resonances, and antiresonances. With the advent of new monochromators and detectors with high energy resolution and low signal-to-noise ratio, the present work ushers an atomically resolved STEM-based spectroscopy of individual impurities as an alternative to conventional spectroscopies for probing impurities and defects.

36 MATERIALS SCIENCE↗

Colossal photon bunching in quasiparticle-mediated nanodiamond cathodoluminescence

Nanoscale control over the second-order photon correlation function g (2) (τ) is critical to emerging research in nonlinear nanophotonics and integrated quantum information science. Here we report on quasiparticle control of photon bunching with g (2) (0) > 45 in the cathodoluminescence of nanodiamond nitrogen vacancy (NV 0 ) centers excited by a converged electron beam in an aberration-corrected scanning transmission electron microscope. Plasmon-mediated NV 0 cathodoluminescence exhibits a 16-fold increase in luminescence intensity correlated with a threefold reduction in photon bunching compared with that of uncoupled NV 0 centers. This effect is ascribed to the excitation of single temporally uncorrelated NV 0 centers by single surface plasmon polaritons. Spectrally resolved Hanbury Brown–Twiss interferometry is employed to demonstrate that the bunching is mediated by the NV 0 phonon sidebands, while no observable bunching is detected at the zero-phonon line. As a result, the data are consistent with fast phonon-mediated recombination dynamics, a conclusion substantiated by agreement between Bayesian regression and Monte Carlo models of superthermal NV 0 luminescence.

74 ATOMIC AND MOLECULAR PHYSICS↗

Achieving atomic resolution magnetic dichroism by controlling the phase symmetry of an electron probe

The calculations presented here reveal that an electron probe carrying orbital angular momentum is just a particular case of a wider class of electron beams that can be used to measure electron magnetic circular dichroism (EMCD) with atomic resolution. It is possible to obtain an EMCD signal with atomic resolution by simply breaking the symmetry of the electron probe phase front using the aberration-corrected optics of a scanning transmission electron microscope. The probe’s required phase distribution depends on the sample’s magnetic symmetry and crystal structure. The calculations indicate that EMCD signals that use the electron probe’s phase are as strong as those obtained by nanodiffraction methods.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Gigahertz Dielectric Polarization of Substitutional Single Niobium Atoms in Defective Graphitic Layers

In this work, we synthesize two Nb/C composites with an order of magnitude difference in the density of single niobium atoms substituted into defective graphitic layers. The concentration and sites of single Nb atoms are identified using aberration-corrected scanning transmission electron microscopy and density functional theory. Comparing the experimental complex permittivity spectra reveals that a representative dielectric resonance at ~16 GHz originates from the intrinsic polarization of single Nb atom sites, which is confirmed by theoretical simulations. The single-atom dielectric resonance represents the physical limit of the electromagnetic response of condensed matter, and thus might open up a new avenue for designing electromagnetic wave absorption materials. Single-atom resonance also has important implications in understanding the correlation between the macroscopic dielectric behaviors and the atomic-scale structural origin.

74 ATOMIC AND MOLECULAR PHYSICS↗

Antisite Pairs Suppress the Thermal Conductivity of BAs

BAs was predicted to have an unusually high thermal conductivity with a room temperature value of 2000 W m –1 K –1 , comparable to that of diamond. However, the experimentally measured thermal conductivity of BAs single crystals is still lower than this value. To identify the origin of this large inconsistency, we investigate the lattice structure and potential defects in BAs single crystals at the atomic scale using aberration-corrected scanning transmission electron microscopy (STEM). Rather than finding a large concentration of As vacancies ( V As ), as widely thought to dominate the thermal resistance in BAs, our STEM results show an enhanced intensity of some B columns and a reduced intensity of some As columns, suggesting the presence of antisite defects with As B (As atom on a B site) and B As (B atom on an As site). Additional calculations show that the antisite pair with As B next to B As is preferred energetically among the different types of point defects investigated and confirm that such defects lower the thermal conductivity for B As . Using a concentration of 1.8(8)% (6.6 ± 3.0 × 10 20 cm –3 in density) for the antisite pairs estimated from STEM images, the thermal conductivity is estimated to be 65–100 W m –1 K –1 , in reasonable agreement with our measured value. Our study suggests that As B –B As antisite pairs are the primary lattice defects suppressing thermal conductivity of B As . Possible approaches are proposed for the growth of high-quality crystals or films with high thermal conductivity. In conclusion by employing a combination of state-of-the-art synthesis, STEM characterization, theory, and physical insight, this work models a path toward identifying and understanding defect-limited material functionality.

36 MATERIALS SCIENCE↗

Structure Retrieval at Atomic Resolution in the Presence of Multiple Scattering of the Electron Probe

Here, the projected electrostatic potential of a thick crystal is reconstructed at atomic resolution from experimental scanning transmission electron microscopy data recorded using a new generation fast-readout electron camera. This practical and deterministic inversion of the equations encapsulating multiple scattering that were written down by Bethe in 1928 removes the restriction of established methods to ultrathin (≲50 Å) samples. Instruments already coming on line can overcome the remaining resolution-limiting effects in this approaching due to finite probe-forming aperture size, spatial incoherence, and residual lens aberrations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Direct Observation of Infrared Plasmonic Fano Antiresonances by a Nanoscale Electron Probe

In this report, we exploit recent breakthroughs in monochromated aberration-corrected scanning transmission electron microscopy (STEM) to resolve infrared plasmonic Fano antiresonances in individual nanofabricated disk-rod dimers. Using a combination of electron energy-loss spectroscopy and theoretical modeling, we investigate and characterize a subspace of the weak coupling regime between quasi-discrete and quasi-continuum localized surface plasmon resonances where infrared plasmonic Fano antiresonances appear. Our research illustrates the capability of STEM instrumentation to experimentally observe nanoscale plasmonic responses that were previously the domain only of higher-resolution infrared spectroscopies.

36 MATERIALS SCIENCE↗

Visualizing Anisotropic Oxygen Diffusion in Ceria under Activated Conditions

Oxygen reactivity plays a key role in the performance of ceria-based catalysts. Aberration-corrected transmission electron microscopy and molecular dynamics simulations were used to study the oxygen atom diffusion in ceria under activated conditions. Reactive oxygen atom and its real-time diffusion were visualized. Additionally, the interplay between cerium and oxygen atoms originating from a Coulomb interaction was revealed by the out-of-plane buckling of cerium atoms associated with oxygen transport. Anisotropic oxygen atom diffusion that depends on crystal orientations was discovered, demonstrating a preferential [001] crystallographic diffusion pathway. These findings reveal prospects for applications of anisotropic orientation-relevant fluorite-structured oxides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Frustration and Atomic Ordering in a Monolayer Semiconductor Alloy

Frustrated interactions can lead to short-range ordering arising from incompatible interactions of fundamental physical quantities with the underlying lattice. The simplest example is the triangular lattice of spins with antiferromagnetic interactions, where the nearest-neighbor spin-spin interactions cannot simultaneously be energy minimized. In this work, we show that engineering frustrated interactions is a possible route for controlling structural and electronic phenomena in semiconductor alloys. Using aberration-corrected scanning transmission electron microscopy in conjunction with density functional theory calculations, we demonstrate atomic ordering in a two-dimensional semiconductor alloy as a result of the competition between geometrical constraints and nearest-neighbor interactions. Statistical analyses uncover the presence of short-range ordering in the lattice. In addition, we show how the induced ordering can be used as another degree of freedom to considerably modify the band gap of monolayer semiconductor alloys.

2-dimensional systems↗

Dephasingless Laser Wakefield Acceleration

Laser wakefield accelerators (LWFAs) produce significantly high gradients enabling compact accelerators and radiation sources, but face design limitations, such as dephasing, occurring when trapped electrons outrun the accelerating phase of the wakefield. In this report we combine spherical aberration with a novel cylindrically symmetric echelon optic to spatiotemporally structure an ultra-short, high-intensity laser pulse that can overcome dephasing by propagating at any velocity over any distance. The ponderomotive force of the spatiotemporally shaped pulse can drive a wakefield with a phase velocity equal to the speed of light in vacuum, preventing trapped electrons from outrunning the wake. Simulations in the linear regime and scaling laws in the bubble regime illustrate that this dephasingless LWFA can accelerate electrons to high energies in much shorter distances than a traditional LWFA—a single 4.5 m stage can accelerate electrons to TeV energies without the need for guiding structures.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Atomic-Scale Dynamic Interaction of H 2 O Molecules with Cu Surface

Atomic-scale interaction of water vapor with metal surfaces beyond surface adsorption under technologically relevant conditions remains mostly unexplored. Using aberration-corrected environmental transmission electron microscopy, we reveal the dynamic surface activation of Cu by H 2 O at elevated temperature and pressure. In this study, we find a structural transition from flat to corrugated surface for the Cu(011) under low water-vapor pressure. Increasing the water-vapor pressure leads to the surface reaction of Cu with dissociated H 2 O, resulting in the formation of a metastable “bilayer” Cu-O-H phase. Corroborated by density functional theory and ab initio molecular dynamics calculations, the cooperative O and OH interaction with Cu is responsible for the formation and subsurface propagation of this phase.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Near-Monochromatic Tuneable Cryogenic Niobium Electron Field Emitter

We report creating, manipulating, and detecting coherent electrons is at the heart of future quantum microscopy and spectroscopy technologies. Leveraging and specifically altering the quantum features of an electron beam source at low temperatures can enhance its emission properties. Here, we describe electron field emission from a monocrystalline, superconducting niobium nanotip at a temperature of 5.9 K. The emitted electron energy spectrum reveals an ultranarrow distribution down to 16 meV due to tunable resonant tunneling field emission via localized band states at a nanoprotrusion’s apex and a cutoff at the sharp low-temperature Fermi edge. This is an order of magnitude lower than for conventional field emission electron sources. The self-focusing geometry of the tip leads to emission in an angle of 3.7°, a reduced brightness of 3.8 × 10 8 A/(m 2 srV), and a stability of hours at 4.1 nA beam current and 69 meV energy width. This source will decrease the impact of lens aberration and enable new modes in low-energy electron microscopy, electron energy loss spectroscopy, and high-resolution vibrational spectroscopy.

36 MATERIALS SCIENCE↗