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At least 1,477 records · Page 82
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Phonon-assisted oscillatory exciton dynamics in monolayer MoSe 2

In monolayer semiconductor transition metal dichalcogenides, the exciton–phonon interaction strongly affects the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with the excitation laser frequency in monolayer MoSe 2 . The frequency of oscillation matches that of the M-point longitudinal acoustic phonon, LA(M), suggesting the significance of zone-edge acoustic phonons and hence the deformation potential in exciton-phonon coupling in MoSe 2 . Moreover, oscillatory behavior is observed in the steady-state emission linewidth and in time-resolved PLE data, which reveals variation with excitation energy in the exciton lifetime. These results clearly expose the key role played by phonons in the exciton formation and relaxation dynamics of two-dimensional van der Waals semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Identifying Strain Stacking Boundaries between Multiphase Domains in Atomically Thin Two-Dimensional Magnets

Stacking engineering of van der Waals materials is an important strategy to control the materials’ properties, such as electronic correlations, ferroelectricity, and layer-dependent two-dimensional magnetism. A timely testbed for the study of the latter is atomically thin chromium trihalides (CrX 3 , X = Cl, Br, I). Notably, by understanding the sliding mechanism between different stacking sequences, control of the stacking arrangement, and thus magnetic properties in CrX 3 , can be achieved. Such insight, however, is currently lacking. Here, in this study, advanced electron microscopy methods are used to identify multiple stacking sequences corresponding to different bulk phases in atomically thin CrX 3 (X = Cl and Br) down to bilayer thickness and with lateral domain sizes as small as tens of nanometers. Indications of nanometer scale transitions and interactions at the stacking boundaries are found, including a universally preferred sliding direction that is consistent with density functional theory calculations and the strain fields at lateral heterostructure boundaries. This study demonstrates the necessity to consider local stacking structures when interpreting averaged magnetic properties measured with macroscale probes. Additionally, the preferred sliding direction insight from this study provides a strategy to control stacking sequence in atomically thin CrX 3 samples during the exfoliation and sample fabrication process.

DFT calculations↗
DOE OSTI2022

Discovery of charge density wave in a kagome lattice antiferromagnet

A hallmark of strongly correlated quantum materials is the rich phase diagram resulting from competing and intertwined phases with nearly degenerate ground state energies. A well-known example is the copper oxides, where a charge density wave (CDW) is ordered well above and strongly coupled to the magnetic order to form spin-charge separated stripes that compete with superconductivity. Recently, such rich phase diagrams have also been revealed in correlated topological materials. In two-dimensional kagome lattice metals consisting of corner-sharing triangles, the geometry of the lattice can produce flat bands with localized electrons, non-trivial topology, chiral magnetic order, superconductivity and CDW order. While CDW has been found in weakly electron correlated nonmagnetic AV 3 Sb 5 (A = K, Rb, Cs), it has not yet been observed in correlated magnetic ordered kagome lattice metals. Here we report the discovery of CDW within the antiferromagnetic (AFM) ordered phase of kagome lattice FeGe. The CDW in FeGe occurs at wavevectors identical to that of AV 3 Sb 5 , enhances the AFM ordered moment, and induces an emergent anomalous Hall effect. Furthermore, our findings suggest that CDW in FeGe arises from the combination of electron correlations-driven AFM order and van Hove singularities-driven instability possibly associated with a chiral flux phase, in stark contrast to strongly correlated copper oxides and nickelates, where the CDW precedes or accompanies the magnetic order.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Auxetic Two‐Dimensional Nanostructures from DNA**

Abstract Architectured materials exhibit negative Poisson's ratios and enhanced mechanical properties compared with regular materials. Their auxetic behaviors emerge from periodic cellular structures regardless of the materials used. The majority of such metamaterials are constructed by top‐down approaches and macroscopic with unit cells of microns or larger. There are also molecular auxetics including natural crystals which are not designable. There is a gap from few nanometers to microns, which may be filled by biomolecular self‐assembly. Herein, we demonstrate two‐dimensional auxetic nanostructures using DNA origami. Structural reconfigurations are performed by two‐step DNA reactions and complemented by mechanical deformation studies using molecular dynamics simulations. We find that the auxetic behaviors are mostly defined by geometrical designs, yet the properties of the materials also play an important role. From elasticity theory, we introduce design principles for auxetic DNA metamaterials.

Li, Ruixin↗
DOE OSTI2022

Two‐Dimensional Polycyclic Photovoltaic Molecule with Low Trap Density for High‐Performance Photocatalytic Hydrogen Evolution

Abstract Typical organic semiconductors show a high trap density of states (10 16 –10 18 cm −3 ), providing a large number of centers for charge‐carrier recombination, thus hindering the development of photocatalytic hydrogen evolution. Here, we design and synthesize a two‐dimensional polycyclic photovoltaic material, named as TPP, to reduce the trap density to as low as 2.3×10 15 cm −3 , which is 1–3 orders of magnitude lower than those of typical organic semiconductors. Moreover, TPP exhibits a broad and strong absorption, ordered molecular packing with a large crystalline coherence length and enhanced electron mobility. Then, the bulk heterojunction nanoparticles (BHJ‐NPs) based on a blend of polymer donor (PM6) and TPP exhibit an average hydrogen evolution rate (HER) of 64.31 mmol h −1 g −1 under AM1.5G sunlight (100 mW cm −2 ), and 72.75 mmol h −1 g −1 under 330–1100 nm illumination (198 mW cm −2 ) higher than that of the control NPs based on typical PM6 : Y6 (62.67 mmol h −1 g −1 ).

Zhang, Zhenzhen↗
DOE OSTI2017

Surface structure of bulk 2H-MoS 2 (0001) and exfoliated suspended monolayer MoS 2 : A selected area low energy electron diffraction study

Here, we used selected area low energy electron diffraction intensity-voltage (μLEED-IV) analysis to investigate the surface structure of crystalline 2H molybdenum disulfide (MoS 2 ) and mechanically exfoliated and suspended monolayer MoS 2 . Our results show that the surface structure of bulk 2H-MoS 2 is distinct from its bulk and that it has a slightly smaller surface relaxation at 320 K than previously reported at 95 K. We concluded that suspended monolayer MoS 2 shows a large interlayer relaxation compared to the MoS 2 sandwich layer terminating the bulk surface. The Debye temperature of MoS 2 was concluded to be about 600 K, which agrees with a previous theoretical study. Our work has shown that the dynamical μLEED-IV analysis performed with a low energy electron microscope (LEEM) is a powerful technique for determination of the local atomic structures of currently extensively studied two-dimensional (2-D) materials.

2-D material↗
DOE OSTI2017

Phase Segregation Behavior of Two-Dimensional Transition Metal Dichalcogenide Binary Alloys Induced by Dissimilar Substitution

Transition metal dichalcogenide (TMD) alloys form a broad class of two-dimensional (2D) layered materials with tunable bandgaps leading to interesting optoelectronic applications. In the bottom-up approach of building these atomically thin materials, atomic doping plays a crucial role. Here we demonstrate a single step CVD (chemical vapor deposition) growth procedure for obtaining binary alloys and heterostructures by tuning atomic composition. We show that a minute doping of tin during the growth phase of the Mo 1–x W x S 2 alloy system leads to formation of lateral and vertical heterostructure growth. High angle annular dark field scanning transmission electron microscopy (HAADF-STEM) imaging and density functional theory (DFT) calculations also support the modified stacking and growth mechanism due to the nonisomorphous Sn substitution. Our experiments demonstrate the possibility of growing heterostructures of TMD alloys whose spectral responses can be desirably tuned for various optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI 3 -based tunnel junctions. The few-layer CrI 3 -based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI 3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI 3 . We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI 3 via gating-induced Jahn–Teller distortion. Furthermore, our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

2D magnet↗
DOE OSTI2016

Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene–MoS 2 van der Waals Heterojunction

van der Waals heterojunctions between two-dimensional (2D) layered materials and nanomaterials of different dimensions present unique opportunities for gate-tunable optoelectronic devices. Mixed-dimensional p–n heterojunction diodes, such as p-type pentacene (0D) and n-type monolayer MoS 2 (2D), are especially interesting for photovoltaic applications where the absorption cross-section and charge transfer processes can be tailored by rational selection from the vast library of organic molecules and 2D materials. In this work, we study the kinetics of excited carriers in pentacene–MoS 2 p–n type-II heterojunctions by transient absorption spectroscopy. These measurements show that the dissociation of MoS 2 excitons occurs by hole transfer to pentacene on the time scale of 6.7 ps. In addition, the charge-separated state lives for 5.1 ns, up to an order of magnitude longer than the recombination lifetimes from previously reported 2D material heterojunctions. By studying the fractional amplitudes of the MoS 2 decay processes, the hole transfer yield from MoS 2 to pentacene is found to be ~50%, with the remaining holes undergoing trapping due to surface defects. In general, the ultrafast charge transfer and long-lived charge-separated state in pentacene–MoS 2 p–n heterojunctions suggest significant promise for mixed-dimensional van der Waals heterostructures in photovoltaics, photodetectors, and related optoelectronic technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Millimeter-Scale Exfoliation of hBN with Tunable Flake Thickness for Scalable Encapsulation

As a two-dimensional (2D) dielectric material, hexagonal boron nitride (hBN) is in high demand for applications in photonics, nonlinear optics, and nanoelectronics. Unfortunately, the high-throughput preparation of macroscopic-scale, high-quality hBN flakes with controlled thickness is an ongoing challenge, limiting device fabrication and technological integration. In this report we present a metal thin-film exfoliation method to prepare hBN flakes with millimeter-scale dimension, near-unity yields, and tunable flake thickness distribution from 1-7 layers, a substantial improvement over scotch tape exfoliation. The single crystallinity and high quality of the exfoliated hBN are demonstrated with optical microscopy, atomic force microscopy, Raman spectroscopy, and second harmonic generation. We further explore a possible mechanism for the effectiveness and selectivity based on thin-film residual stress measurements, density functional theory calculations, and transmission electron microscopy imaging of the deposited metal films. We find that the magnitude of the residual tensile stress induced by thin film deposition plays a key role in determining exfoliated flake thickness in a manner which closely resembles 3D semiconductor spalling. Lastly, we demonstrate that our exfoliated, large-area hBN flakes can be readily incorporated as encapsulating layers for other 2D monolayers. Altogether, this method brings us one step closer to the high throughput, mass production of hBN-based 2D photonic, optoelectronic, and quantum devices.

2D materials↗
DOE OSTI2022

Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires

While traditional ferroelectrics are based on polar crystals in bulk or thin film form, two-dimensional and layered materials can support mechanisms for symmetry breaking between centrosymmetric building blocks, e.g., by creating low-symmetry interfaces in van der Waals stacks. Here, we introduce an approach toward symmetry breaking in van der Waals crystals that relies on the spontaneous incorporation of stacking faults in a nonpolar bulk layer sequence. The concept is realized in nanowires consisting of Se-rich group IV monochalcogenide (GeSe 1–x S x ) alloys, obtained by vapor–liquid–solid growth. The single crystalline wires adopt a layered structure in which the nonpolar A-B bulk stacking along the nanowire axis is interrupted by single-layer stacking faults with local A-A' stacking. Density functional theory explains this behavior by a reduced stacking fault formation energy in GeSe (or Se-rich GeSe 1–x S x alloys). Computations demonstrate that, similar to monochalcogenide monolayers, the inserted A-layers should show a spontaneous electric polarization with a switching barrier consistent with a Curie temperature above room temperature. Second-harmonic generation signals are consistent with a variable density of stacking faults along the wires. Here, our results point to possible routes for designing ferroelectrics via the layer stacking in van der Waals crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Illumination of Damage in Intact Rocks by Ultrasonic Transmission-Reflection and Digital Image Correlation

aboratory-scale experiments on intact rocks are critical to the development of physics-based fundamental understanding of various geophysical phenomena. In this work, the capability of ultrasonic wave transmission (T-mode) and reflection (R-mode) to monitor damage progression in uniaxially loaded prismatic intact rock specimens has been analyzed, as it is imperative to study the observations and document the capabilities of these techniques in a controlled environment. This study is novel in the sense that the R-mode linear ultrasonic testing (LUT) has been rarely employed in studying intact rock damage processes in a laboratory setting, with most of the studies utilizing a direct transmission (T-mode) approach or focusing on macroscopically fractured material. The two-dimensional digital image correlation (2-D DIC) full-field strain measurement approach was also used in-sync with the LUT monitoring to explicitly correlate the stress-induced damage in the specimens with the changes observed in the ultrasonic (T-mode and R-mode) signals. The results show that both the T-mode and R-mode LUT approaches are sensitive to detect the evolution of tensile and shear damage in the specimens, with the R-mode ultrasonic signals showing higher degree of sensitivity to the damage in the rocks, immediately following the initiation of damage in the rock volume.

58 GEOSCIENCES↗
DOE OSTI2015

Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is ~10 15 cm -2 for the 4.8-nm-thick PNS when exposed to 20 p.p.b. NO 2 at 300 K. As a result, our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (<10 nm) and by the effective thickness on gas adsorption for thicker sheets (>10 nm).

36 MATERIALS SCIENCE↗
DOE OSTI2018

Reversible and selective ion intercalation through the top surface of few-layer MoS 2

Electrochemical intercalation of ions into the van der Waals gap of two-dimensional (2D) layered materials is a promising low-temperature synthesis strategy to tune their physical and chemical properties. It is widely believed that ions prefer intercalation into the van der Waals gap through the edges of the 2D flake, which generally causes wrinkling and distortion. Here we demonstrate that the ions can also intercalate through the top surface of few-layer MoS 2 and this type of intercalation is more reversible and stable compared to the intercalation through the edges. Density functional theory calculations show that this intercalation is enabled by the existence of natural defects in exfoliated MoS 2 flakes. Furthermore, we reveal that sealed-edge MoS 2 allows intercalation of small alkali metal ions (e.g., Li + and Na + ) and rejects large ions (e.g., K + ). Lastly, these findings imply potential applications in developing functional 2D-material-based devices with high tunability and ion selectivity.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Manifold learning of four-dimensional scanning transmission electron microscopy

Four-dimensional scanning transmission electron microscopy (4D-STEM) of local atomic diffraction patterns is emerging as a powerful technique for probing intricate details of atomic structure and atomic electric fields. However, efficient processing and interpretation of large volumes of data remain challenging, especially for two-dimensional or light materials because the diffraction signal recorded on the pixelated arrays is weak. Here we employ data-driven manifold leaning approaches for straightforward visualization and exploration analysis of 4D-STEM datasets, distilling real-space neighboring effects on atomically resolved deflection patterns from single-layer graphene, with single dopant atoms, as recorded on a pixelated detector. These extracted patterns relate to both individual atom sites and sublattice structures, effectively discriminating single dopant anomalies via multi-mode views. We believe manifold learning analysis will accelerate physics discoveries coupled between data-rich imaging mechanisms and materials such as ferroelectric, topological spin, and van der Waals heterostructures.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Abstract Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi 2 Te 4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn -junction diodes and sub-3-nm pin -junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip - and nin -junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

Chemistry↗
DOE OSTI2022

Chiral superconductivity with enhanced quantized Hall responses in moiré transition metal dichalcogenides

Experimental demonstrations of tunable correlation effects in magic-angle twisted bilayer graphene have put two-dimensional moiré quantum materials at the forefront of condensed-matter research. Other twisted few-layer graphitic structures, boron-nitride, and homo- or hetero-stacks of transition metal dichalcogenides (TMDs) have further enriched the opportunities for analysis and utilization of correlations in these systems. Recent experiments within the latter material class confirmed the relevance of many-body interactions and demonstrated the importance of their extended range. Since the interaction, its range, and the filling can be tuned experimentally by twist angle, substrate engineering and gating, we here explore Fermi surface instabilities and resulting phases of matter of hetero-bilayer TMDs. Using an unbiased renormalization group approach, we establish in particular that hetero-bilayer TMDs are platforms to realize topological superconductivity with winding number |$\mathcal{N}$| = 4. We show that this state reflects in pronounced experimental signatures, such as distinct quantum Hall features.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Interface depended electronic and magnetic properties of vertical CrI 3 /WSe 2 heterostructures

Owing to the great potential applications in information processing and storage, two-dimensional (2D) magnetic materials have recently attracted significant attention. Here, using first-principles calculations, we investigate the electronic and magnetic properties of the van der Waals CrI 3 /WSe 2 heterostructures. We find that after forming heterostructures, monolayer CrI 3 undergoes a direct to indirect band gap transition and its gap size is greatly reduced. In particular, the out-plane spin quantization axis of monolayer CrI 3 is tuned into in-plane for most stacking configurations of CrI 3 /WSe 2 . We further reveal that the transition of the easy magnetization direction is mainly originated from the hybridization between Cr-d and Se-p orbitals. These theoretical results provide a useful picture for the electronic structure and magnetic anisotropy behaviors in vertical CrI 3 /WSe 2 heterostructures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗