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At least 1,477 records · Page 82

Evaluating the impact of peat soils and snow schemes on simulated active layer thickness at pan-Arctic permafrost sites

Abstract Permafrost stability is significantly influenced by the thermal buffering effects of snow and active-layer peat soils. In the warm season, peat soils act as a barrier to downward heat transfer mainly due to their low thermal conductivity. In the cold season, the snowpack serves as a thermal insulator, retarding the release of heat from the soil to the atmosphere. Currently, many global land models overestimate permafrost soil temperature and active layer thickness (ALT), partially due to inaccurate representations of soil organic matter (SOM) density profiles and snow thermal insulation. In this study, we evaluated the impacts of SOM and snow schemes on ALT simulations at pan-Arctic permafrost sites using the Energy Exascale Earth System Model (E3SM) land model (ELM). We conducted simulations at the Circumpolar Active Layer Monitoring (CALM) sites across the pan-Arctic domain. We improved ELM-simulated site-level ALT using a knowledge-based hierarchical optimization procedure and examined the effects of precipitation-phase partitioning methods (PPMs), snow compaction schemes, and snow thermal conductivity schemes on simulated snow depth, soil temperature, ALT, and CO 2 fluxes. Results showed that the optimized ELM significantly improved agreement with observed ALT (e.g. RMSE decreased from 0.83 m to 0.15 m). Our sensitivity analysis revealed that snow-related schemes significantly impact simulated snow thermal insulation levels, soil temperature, and ALT. For example, one of the commonly used snow thermal conductivity schemes (quadratic Sturm or SturmQua) generally produced warmer soil temperatures and larger ALT compared to the other two tested schemes. The SturmQua scheme also amplified the model’s sensitivity to PPMs and predicted deeper ALTs than the other two snow schemes under both current and future climates. The study highlights the importance of accurately representing snow-related processes and peat soils in land models to enhance permafrost dynamics simulations.

54 ENVIRONMENTAL SCIENCES↗

Influence of dosing sequence and film thickness on structure and resistivity of Al-ZnO films grown by atomic layer deposition

Aluminum-doped zinc oxide (AZO) films were deposited onto amorphous silica substrates using an atomic layer deposition process with diethyl zinc (DEZ), trimethyl aluminum (TMA), and deionized water at 200 °C. Three different Al doping sequences were used at a ZnO:Al ratio of 11:1 within the films. A minimum film resistivity of 1.6 × 10{sup −3} Ω cm was produced using sequential dosing of DEZ, TMA, DEZ, followed by H{sub 2}O for the Al doping step. This “ZAZW” sequence yielded an AZO film resistivity that is independent of film thickness, crystallographic texture, and grain size, as determined by high resolution x-ray diffraction (XRD). A pseudo-Voigt analysis method yields values for grain sizes that are smaller than those calculated using other XRD methods. Anisotropic grain sizes or variations in crystallographic texture have minimal influence on film resistivity, which suggests that factors other than film texture, such as intragrain scattering, may be important in influencing film resistivity.

36 MATERIALS SCIENCE↗

Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films

The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB{sub 2} thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature T{sub C}, the authors are the first to report on the correlation between stoichiometry and the lower critical field H{sub C1}.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Narrow thermal hysteresis of NiTi shape memory alloy thin films with submicrometer thickness

NiTi shape memory alloy (SMA) thin films were fabricated using biased target ion beam deposition (BTIBD), which is a new technique for fabricating submicrometer-thick SMA thin films, and the capacity to exhibit shape memory behavior was investigated. The thermally induced shape memory effect (SME) was studied using the wafer curvature method to report the stress-temperature response. The films exhibited the SME in a temperature range above room temperature and a narrow thermal hysteresis with respect to previous reports. To confirm the underlying phase transformation, in situ x-ray diffraction was carried out in the corresponding phase transformation temperature range. The B2 to R-phase martensitic transformation occurs, and the R-phase transformation is stable with respect to the expected conversion to the B19′ martensite phase. The narrow hysteresis and stable R-phase are rationalized in terms of the unique properties of the BTIBD technique.

36 MATERIALS SCIENCE↗

SU-F-I-75: Half-Value Layer Thicknesses and Homogeneity Coefficients for Fluoroscopic X-Ray Beam Spectra Incorporating Spectral Filtration

Purpose: The purpose of this investigation is to quantify various first half-value-layers (HVLs), second HVLs and homogeneity coefficients (HCs) for a state-of-the-art fluoroscope utilizing spectral (copper) filtration. Methods: A Radcal (Monrovia, Ca) AccuPro dosimeter with a 10×6-6 calibrated ionization chamber was used to measure air kerma for radiographic x-ray exposures made on a Siemens (Erlangen, Germany) Artis ZeeGo fluoroscope operated in the service mode. The ionization chamber was centered in the x-ray beam at 72 cm from the focal spot with a source-to-image-distance of 120 cm. The collimators were introduced to limit the x-ray field to approximately 5 cm × 5 cm at the ionization chamber plane. Type-1100 aluminum filters, in 0.5 mm increments, were used to determine the HVL. Two HVL calculation methods were used, log-linear interpolation and Lambert-W interpolation as described by Mathieu [Med Phys, 38(8), 4546 (2011)]. Multiple measurements were made at 60, 80, 100, 120 kVp at spectral filtration thicknesses of 0, 0.1, 0.3, 0.6 and 0.9 mm. Results: First HVL, second HVL, and HCs are presented for the fluoroscopic x-ray beam spectra indicated above, with nearly identical results from the two interpolation methods. Accuracy of the set kVp was also determined and deviated less than 2%. First HVLs for fluoroscopic x-ray beam spectra without spectral filtration determined in our study were 7%–16% greater than previously published data by Fetterly et al. [Med Phys, 28, 205 (2001)]. However, the FDA minimum HVL requirements changed since that publication, requiring larger HVLs as of 2006. Additionally, x-ray tube and generator architecture have substantially changed over the last 15 years providing different beam spectra. Conclusion: X-ray beam quality characteristics for state-of-the-art fluoroscopes with spectral filtration have not been published. This study provides reference data which will be useful for defining beam qualities encountered on fluoroscopes using spectral filtration.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

SU-F-J-192: A Quick and Effective Method to Validate Patient’s Daily Setup and Geometry Changes Prior to Proton Treatment Delivery Based On Water Equivalent Thickness Projection Imaging (WETPI) for Head Neck Cancer (HNC) Patient

Purpose: With the implementation of Cone-beam Computed-Tomography (CBCT) in proton treatment, we introduces a quick and effective tool to verify the patient’s daily setup and geometry changes based on the Water-Equivalent-Thickness Projection-Image(WETPI) from individual beam angle. Methods: A bilateral head neck cancer(HNC) patient previously treated via VMAT was used in this study. The patient received 35 daily CBCT during the whole treatment and there is no significant weight change. The CT numbers of daily CBCTs were corrected by mapping the CT numbers from simulation CT via Deformable Image Registration(DIR). IMPT plan was generated using 4-field IMPT robust optimization (3.5% range and 3mm setup uncertainties) with beam angle 60, 135, 300, 225 degree. WETPI within CTV through all beam directions were calculated. 3%/3mm gamma index(GI) were used to provide a quantitative comparison between initial sim-CT and mapped daily CBCT. To simulate an extreme case where human error is involved, a couch bar was manually inserted in front of beam angle 225 degree of one CBCT. WETPI was compared in this scenario. Results: The average of GI passing rate of this patient from different beam angles throughout the treatment course is 91.5 ± 8.6. In the cases with low passing rate, it was found that the difference between shoulder and neck angle as well as the head rest often causes major deviation. This indicates that the most challenge in treating HNC is the setup around neck area. In the extreme case where a couch bar is accidently inserted in the beam line, GI passing rate drops to 52 from 95. Conclusion: WETPI and quantitative gamma analysis give clinicians, therapists and physicists a quick feedback of the patient’s setup accuracy or geometry changes. The tool could effectively avoid some human errors. Furthermore, this tool could be used potentially as an initial signal to trigger plan adaptation.

60 APPLIED LIFE SCIENCES↗

Dependence of the surface topology and raman scattering spectra of Ge{sub x}Si{sub 1-x}/Si films on the composition variation over the layer thickness

The surface topology and Raman scattering spectra of Ge{sub x}Si{sub 1-x}/Si(100) films are investigated in dependence of the composition variation over the film thickness. It is shown that the character of the Ge content variation in the Ge{sub x}Si{sub 1-x} alloy at the constant cumulative Ge fraction in the film (x{sub int} = 0.5) affects the surface morphology of the grown Ge{sub x}Si{sub 1-x}/Si layer. The heterostructures were grown by molecular-beam epitaxy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optical Spectra of GaSe and GaS Crystals of Different Thicknesses

The transmission spectra of GaSe and GaS crystals of different thicknesses prepared by mechanical stratification of bulk crystals have been investigated. The quantum-size shifts of exciton resonances in thin GaSe samples are as high as 12 meV, which is close to the exciton binding energy. The high-energy interband transitions in GaSe and GaS are observed near 3.4 and 3.7 eV, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The Influence of Film Thickness on Annealing-Induced Grain Growth in Pt Films

Pt films with thickness h = 20–100 nm deposited on oxidized с-Si(100) substrate have been subjected to vacuum annealing at 500°C for 1 h, which resulted in recrystallization and growth of grains. Simultaneously with the normal growth of grains, abnormal grain growth has been observed, as a result of which the grains have separated in normal and secondary grains. For h = 20–40 nm, the secondary grains become much larger than the normal ones and the grain lateral size distribution therefore becomes bimodal. It has been shown that the abnormal grain growth rate increases with decreasing h, whereas the normal grain growth rate is independent of h. From the Pt(111) and Pt(222) X-ray diffraction peaks analysis it follows that the mean size D of coherently diffracting domains increases as a result of annealing. In the annealed films, D sublinearly grows with h, whereas in the as-prepared films, D grows linearly.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO{sub 2}/CaF{sub 2}/Si System)

The effect of increasing the tunnel current in a metal–calcium fluoride–silicon structure with addition of a silicon dioxide layer between fluoride and metal (which seems paradoxical at first glance) has been considered. This effect of nonmonotonic change in the tunnel conductivity with an increase in the insulator thickness may occur at a relatively high bias at the structure and is related to the tunnel-barrier deformation, at which electrons are tunneling through its part formed by the oxide. At low biases, the occurrence/ thickening of an additional layer leads to a natural decrease in the current. Similar behavior is possible in principle for some other combinations of materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Assessing the Thickness of Thin Films Based on Elemental Data Composition of Film Structures

Abstract—We demonstrate the possibility of a quantitative assessment of the thickness of thin films using to measurements of the cationic composition of film structures using the INCA Energy-350 energy dispersion spectrometer that is part of the JSM-6490 LV electron microscope (Japan). The use of this method is especially useful if it is impossible to provide sufficient contrast between the images of the film and substrate sections obtained with a scanning electron microscope on a transverse cleavage of the film structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A Thick-Restart Lanczos Algorithm with Polynomial Filtering for Hermitian Eigenvalue Problems

Polynomial filtering can provide a highly effective means of computing all eigenvalues of a real symmetric (or complex Hermitian) matrix that are located in a given interval, anywhere in the spectrum. This paper describes a technique for tackling this problem by combining a thick-restart version of the Lanczos algorithm with deflation ("locking'') and a new type of polynomial filter obtained from a least-squares technique. Furthermore, the resulting algorithm can be utilized in a “spectrum-slicing” approach whereby a very large number of eigenvalues and associated eigenvectors of the matrix are computed by extracting eigenpairs located in different subintervals independently from one another.

97 MATHEMATICS AND COMPUTING↗

Quarterly Management Document – FY19, 4th Quarter, Physics-based Creep Simulations of Thick Section Welds in High Temperature and Pressure Applications

During the 4th quarter of FY19, diffusional creep effects, based on the local stress tensor, was incorporated into the modeling and simulation efforts on thick section welds of Alloy 740H. The model is now complete and addresses both dislocation-based creep as well as diffusional creep mechanisms. Preliminary result indicate the model is now capable of predicting a transition from secondary creep to tertiary creep. Calibration of the model using experimental creep data remains to be performed and will be done in the first quarter of FY20.

36 MATERIALS SCIENCE↗

Computational Analysis of Water Film Thickness During Rain Events for Assessing Hydroplaning Risk, Part 1: Nearly Smooth Road Surfaces

In the research work reported here, both two- and three-dimensional computational fluid dynamics (CFD) analysis was used to investigate modern road geometries that were not frequently encountered in the latter half of the 20th century but are much more common today. The relation of newer road geometries to the water film thickness that develops on travel lanes was a major focus of this work.

42 ENGINEERING↗

High Temperature Thick Film Sensor Development Based on Refractory Oxide Semiconductors

Solid-state, high-temperature sensing devices are required for accurate temperature, strain/stress, and failure monitoring for a range of advanced manufacturing, transportation, and military applications. High temperature conditions limit sensing strategies, where typically traditional metal and semiconductor materials are unstable, and the sensing options are limited to optical spectroscopy methods. In addition, strategies to embed the sensors directly within active components and protective thermal refractory are of interest that permit near-environment sensing which is not possible with the traditional electronic materials and components. Rare-earth chromite semiconductors exhibit some properties of interest for high temperature sensing technologies, such as: high microstructure and chemical stability, relatively high electronic conductivity at high temperatures, and relative thermal expansion coefficient matching to refractory thermal protective insulation (such as high-zirconia and -alumina ceramics). In this work, n-type and p-type doped lanthanum chromites compositions were computationally modelled and prepared, and the electrical, thermoelectric, and thermomechanical properties were measured for the obtained material systems. A few compositions were then processed into thick film health and temperature sensors and tested at high temperatures. To establish relative stability under harsh environment conditions, post- mortem microstructure and chemical composition was characterized after extended and cycle testing at high temperatures.

20 FOSSIL-FUELED POWER PLANTS↗

High temperature thick film sensor development based on doped lanthanum chromites refractory semiconductors materials

High temperature advanced sensing materials have generated high demand due the high accuracy temperature measurements requirements for process optimization, controlling and sensing. Some technological applications of harsh conditions sensing include monitoring tiles of space shuttles, rotating bearings in aircraft engines, turbines, jet engines dynamics and chemical reactors. High temperature conditions limit the sensing strategies, where typically traditional metal thermocouples are unstable, and the sensing options are limited to optical spectroscopy methods. Recently, refractory semiconductors thick- and thin-film thermocouples have been developed and, in many cases, preferred over conventional metallic thermocouples due their spatial resolution, and capability of direct deposition on any surface. Rare earth chromites ceramics materials, exhibit some properties of interest for high temperature sensing technologies development, such as: high microstructure and sintering stability, excellent conductive behavior at high temperatures, and matching thermal expansion coefficients relative to other conductors and refractory ceramics. In this work, high performance ultra-high temperature thermocouples using p-type and n-type doped lanthanum chromites materials were fabricated and tested at temperatures up to 1500 o C. Thermoelectric voltage, Seebeck Coefficients were established for all devices, evidencing high stability and performance in prolongated operational time and harsh conditions.

20 FOSSIL-FUELED POWER PLANTS↗

Experimental Investigation of the Change in the Efficiency of Hydrogenated Amorphous Silicon Solar Cells with Different Intrinsic Layer Thicknesses

The paper presents the results of experimental studies on changes in the efficiency of p-i-n-structured solar cells based on hydrogenated amorphous silicon (a-Si : H) with different thicknesses of the intrinsic i-region under prolonged illumination. An improvement in the efficiency of solar cells owing to light exposure and the Staebler–Wronski effect were observed. It was established that a-Si : H solar cells have a predetermined structure and parameters that influence the Staebler–Wronski effect, which must be taken into consideration in photocell construction.

14 SOLAR ENERGY↗