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Irradiations and subsequent failure analyses were performed to investigate single event dielectric rupture (SEDR) in Actel FPGAs as a function of ion LET, angle, bias, temperature, feature size, and device type. The small cross sections imply acceptably low risk for most spacecraft uses.
Published data on the processors sensitivites with respect to SEU is generally obtained from radiation ground testing during which the program is executed by the DUT consists in the sequential inspection of each of the processor memory cells accessible to the user, through the execution of a suitable instruction sequence. In such programs, so-called static tests, typically considered memory cells are general-purpose registers, special registers (program counter, stack pointer...) and internal memory. Nevertheless, the register use and duty cycle of the final application will be very different, including using instructions no in the static tests and disturbing other potential SEU targets. The ideal would be the use of the final application program for the radiation ground testing, but generally this program is either unknown or unavailable when the qualification testing is performed on candidate circuits to space projects.
Controlled bias vs. dose is being used to induce radiation-annealing, minimize charge in depletion zones and thereby keep JFET within acceptable operating limits during flight.
Single-event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes and core voltages. Multiple-bit upsets (MBU) in registers and were measured and compared with single-bit upsets. Also, the scaling of the cross section with reduction of feature size for SOI microprocessors was discussed.
In this paper we report results of single-event tests of the PowerPC750 from Motorola and IBM, which are identical designs which are manufactured with advanced processes that uses a minimum feature size of 0.29 and 0.28 mu m, respectively.
Radiation exposure of certain types of devices tends to stick bits, causing them to not be read out correctly after programming.
In-flight data is examined showing a very high incidence of multiple-bit errors in a solid-state recorder that incorporates error detection and correction. The high MBU rate is shown to be a consequence of the physical selection of memory cell locations in the recorder architecture.
This paper summarizes single event upset and latchup data from 1996 to 1998 from numerous sources.
Proton upset effects in optocouplers were reported by LaBel, et al. that showed an unexpected increase in cross section for incident angles above 80 degrees.
Flash memories have evolved very rapidly in recent years.
In this paper we discuss radiation effects issues that have become important for NASA programs in the last few years. Particularly critical is the increasing usage of commericial off-the-shelf (COTS) devices and circuits in interplanetary missions that experience significant exposure to radiation.
Three types of heavy-ion upsets occurred in an advanced FPGA-configuration PROM: (1) address errors, (2) premature end-of-program signals, and (3) functional interrupt. The threshold Lets were near 5 MeV-cm***sup2***/mg.
Results of an experiment providing initial validation of the use of charge collection spectroscopy to measure the over-layer and epitaxial thickness and substrate diffusion length are given for several CMOIS SRAM test devices.
The objective of the present work is to characterize the temporal evolution of the electromagnetic signatures of sea ice from initial formation through the development of first-year ice on the basis of the temporal variations in the physical properties of the ice.
Particle irradiation on the mechanical sensor of the ADXL50 microelectromechanical accelerometer shifts the output voltage.
Single-event upset is investigated for optocouplers.