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At least 1,477 records · Page 82

Wide Bandgap Generation (WBGen): Developing the Future Wide Bandgap Power Electronics Engineering Workforce

This Final Technical Report (FTR) summarizes the work conducted at the Center for Power Electronics Systems (CPES) under the Wide-Bandgap Generation (WBGen) fellowship and traineeship program established by the Advanced Manufacturing and Technologies Office (AMMTO) of the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy (EERE) at Virginia Tech, which had as main objective to train the next generation of U.S. citizen power engineers with wide-bandgap (WBG) power semiconductor expertise, with the intent to aid in fulfilling the future workforce needs in this field. The latter was deemed of strategic importance given the fast-paced growth observed—and predicted—in the demand of this technical expertise, whose practitioners have become the enablers and executioners of the electrification transformation process that not just the U.S., but the whole world, is currently undergoing as it seeks for more effective and efficient ways to use energy. As such, the WBGen program set forth to achieve its educational goals, which in addition sought to broaden the range of WBG-based power electronics by conducting research and development on high-efficiency grid apparatus and high-efficiency electrical power systems, and to also enhance the power engineering curriculum by formalizing WBG-oriented design procedures replacing existent yet now obsolete design procedures developed for Silicon (Si) based power electronics. This effort led CPES to spearhead the development of a new major within The Bradley Electrical and Computer Engineering (ECE) Department at Virginia Tech, namely Electronic Power and Energy Systems (EPES), which coalesced power electronics and power systems courses to provide undergraduate students with a strong formation in the power engineering field, while creating a pipeline of graduate students that could pursue the WBG-based curriculum and conduct research at CPES. In all, in what is considered a true success, eight of the twenty WBGen fellows that graduated program were recruited from the ECE department undergraduate cohort. The traineeship emphasized as well, from its beginning, the partnership with industry and national laboratories, which took advantage of the successful industry consortium at CPES that has historically been formed by 80–90 power and energy companies working in close collaboration with the center. This gave WBGen fellows the accessibility and possibility to conduct internships at partner facilities during the summer months, focused solely on the evaluation, testing, and adoption of WBG devices, which were many times tightly related to their respective research work and plans. In addition, WBGen fellows conducted their main research work within the confines of research programs at CPES conducted with these industry partners, providing them with a unique opportunity to develop not just their technical expertise—while advancing their knowledge, but to also learn and practice a slew of skills needed for their professional growth. As such, the fellows tackled a variety of WBG-related research topics, from device reliability and capability aspects as well as packaging and integration, encompassing the use of advanced materials and new structures, current sharing challenges, and insulation systems, to advanced gate-drivers with integrated sensors and protection mechanisms and active current- and voltage-based control, to optimized layouts seeking to maximize the switching and power processing performance of these devices, to power processing solutions adopting Gallium-Nitride (GaN) and Silicon-Carbide (SiC) power semiconductors for a variety of applications; including radiation-hardened converters for space dc distribution systems, direct three-phase ac-to-ac power converters for aerospace systems, dc-ac inverters for automotive traction drives, high-frequency isolated dc-dc battery chargers also for heavy transportation systems, and medium-voltage dc-dc and dc-ac converters for distribution systems and future power grids. The WBGen program ultimately graduated a total of 20 power engineers, all experts on WBG-based power electronics, awarding 18 M.S. and 2 PhD degrees in the process. These fellows, all U.S. citizens, allowed CPES to increase the number of citizens students to 33 % at the peak of the program, as the traineeship made possible the recruitment of talent with more attractive graduate research assistantship (GRA) contracts. Unfortunately, the present U.S. citizen enrollment at CPES has declined back to historic levels—approximately 10 %, as the regular GRA rates are not competitive enough when compared with entry-level industry jobs. In all, WBGen fellows published a total of 7 peer-reviewed journal articles, 44 papers at international technical conferences, made 42 presentations at international technical conferences, and filed 4 invention disclosures and patent applications, which have since then been granted by the U.S. Patent and Trademark Office (USPTO). Their contribution to CPES, Virginia Tech, the United States, and the world, has been significant, and continues to yield results thanks to the exemplary career that the fellows have initiated at many of the partners of the program, which include Wolfspeed, Raytheon Technologies, Infineon, Lockheed Martin, Dominion Energy, Northrop Grumman, Rivian, Aerospace Corporation, Sandia National Laboratory, National Renewable Energy Laboratory, John Hopkins University, and Virginia Tech.

14 SOLAR ENERGY↗

Non-Parametric Statistical Analysis of Current Waveforms through Power System Sensors

The protection, control, and monitoring of the power grid is not possible without accurate measurement devices. As the percentage of renewable energy sources penetrating the existing grid infrastructure increases, so do uncertainties surrounding their effects on the everyday operation of the power system. Many of these devices are sources of high-frequency transients. These transients may be useful for identifying certain events or behaviors otherwise not seen in traditional analysis techniques. Therefore, the ability of sensors to accurately capture these phenomena is paramount. In this work, two commercial-grade power system distribution sensors are investigated in terms of their ability to replicate high-frequency phenomena by studying their responses to three events: a current inrush, a microgrid “close-in”, and a fault on the terminals of a wind turbine. Kernel density estimation is used to derive the non-parametric probability density functions of these error distributions and their adequateness is quantified utilizing the commonly used root mean square error (RMSE) metric. It is demonstrated that both sensors exhibit characteristics in the high harmonic range that go against the assumption that measurement error is normally distributed.

47 OTHER INSTRUMENTATION↗

A Single-Stage Isolated Resonant SiC DC/AC Inverter for Efficient High-Power Applications

This paper presents a single-stage series-resonant dual active half bridge (SR-DAHB) inverter suitable for high power applications. The topology is an isolated dual half-bridge circuit with an unfolding bridge. A combined phase-shift and frequency modulation technique is utilized to generate AC power output. In high-power applications where the switching devices operate at relatively high current and voltage, the switching loss becomes the major portion of the converter’s total loss as the devices are turned on and off under hard switching condition. The primary merit of the proposed single-stage SR-DAHB inverter with the combined phase-shift and frequency modulation control is to significantly reduce the switching loss so that it is not a function of load current. A precise and comprehensive power loss model is developed for both the SR-DAHB and DAHB to optimize the operation of the inverters. The objective of the optimization is to minimize the inverter total loss while calculating the optimum combination of frequency and phase shift. A 1.5 kV, 50 kW prototype was built to demonstrate the performance of the SRDAHB versus DAHB inverters with the combined phase-shift and frequency modulation control, and validate the theoretical analysis.

Tayebi, S. Milad↗

High-temperature optically activated GaAs power switching for aircraft digital electronic control

Gallium arsenide high-temperature devices were fabricated and assembled into an optically activated pulse-width-modulated power control for a torque motor typical of the kinds used in jet engine actuators. A bipolar heterojunction phototransistor with gallium aluminum arsenide emitter/window, a gallium arsenide junction field-effect power transistor and a gallium arsenide transient protection diode were designed and fabricated. A high-temperature fiber optic/phototransistor coupling scheme was implemented. The devices assembled into the demonstrator were successfully tested at 250 C, proving the feasibility of actuator-located switching of control power using optical signals transmitted by fibers. Assessments of the efficiency and technical merits were made for extension of this high-temperature technology to local conversion of optical power to electrical power and its control at levels useful for driving actuators. Optical power sources included in the comparisons were an infrared light-emitting diode, an injection laser diode, tungsten-halogen lamps and arc lamps. Optical-to-electrical power conversion was limited to photovoltaics located at the actuator. Impedance matching of the photovoltaic array to the load was considered over the full temperature range, -55 C to 260 C. Loss of photovoltaic efficiency at higher temperatures was taken into account. Serious losses in efficiency are: (1) in the optical source and the cooling which they may require in the assumed 125 C ambient, (2) in the decreased conversion efficiency of the gallium arsenide photovoltaic at 260 C, and (3) in impedance matching. Practical systems require improvements in these areas.

Berak, J. M.↗

System and Method for an Integrated Satellite Platform

A system, method, and computer-readable storage devices for a 6U CubeSat with a magnetometer boom. The example 6U CubeSat can include an on-board computing device connected to an electrical power system, wherein the electrical power system receives power from at least one of a battery and at least one solar panel, a first fluxgate sensor attached to an extendable boom, a release mechanism for extending the extendable boom, at least one second fluxgate sensor fixed within the satellite, an ion neutral mass spectrometer, and a relativistic electron/proton telescope. The on-board computing device can receive data from the first fluxgate sensor, the at least one second fluxgate sensor, the ion neutral mass spectrometer, and the relativistic electron/proton telescope via the bus, and can then process the data via an algorithm to deduce a geophysical signal.

Clagett, Charles E.↗

A Commercial Building Plug Load Management System that Uses Internet of Things Technology to Automatically Identify Plugged-In Devices and Their Locations

Plug and process loads (PPLs) account for a large portion of U.S. commercial building energy use. There is a huge potential to reduce whole building consumption by targeting PPLs for energy savings measures or implementing some form of plug load management (PLM). Despite this potential, there has yet to be a widely adopted commercial PLM technology. This paper describes the Automatic Type and Location Identification System (ATLIS), a PLM system framework with automatic and dynamic load detection (ADLD). ADLD gives PLM systems the ability to automatically identify devices as they are plugged into the outlets of a building. The ATLIS framework takes advantage of smart, connected devices to identify device locations in a building, meter and control their power, and communicate this information to a central database. ATLIS includes five primary capabilities: location identification, communication, control, energy metering, and data storage. A laboratory proof of concept (PoC) demonstrated all but the energy metering capability, and these capabilities were validated using a series of system tests. The PoC was able to identify when a device was plugged into an outlet and the location of the device in the building. When a device was moved, the PoC's dashboard and database were automatically updated with the new location. The PoC implemented controls to devices from the system dashboard so that devices maintained correct schedules regardless of where they were plugged in within the building. ATLIS's primary technology application is improved PLM, but other applications include asset management, energy audits, and interoperability for grid-interactive efficient buildings. An ATLIS-based system could also be used to direct power to critical devices, such as ventilators, during a brownout or blackout. Such a framework is an opportunity to make PLM more widespread and reduce the amount of energy consumed by PPLs in current and future commercial buildings.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Lightweight, light-trapped, thin GaAs solar cell for spacecraft applications: Progress and results update

Progress is reported with respect to the development of ultra-lightweight, high performance, thin, light trapped GaAs solar cells for advanced space power systems. Conversion efficiencies of over 17.7% have been demonstrated for a 3 micron thick, 1 sq cm silicone bonded solar cell. This results in a specific power of over 1020 W/kg. Device parameters were 1.011 V open circuit voltage, 80% fill factor, and a short-circuit current density of 29.5 mA/sq cm . In addition to silicone bonding, the use of electrostatic bonding to attach the coverglass support to the front surface enables an ultra-thin, all back contact design that survives processing temperatures greater than 750 C. This also results in a 10% reduction of the cell weight for a potential specific power of 1270 W/kg. All back contact, ultra-thin, electrostatically bonded GaAs solar cell prototypes have been completed demonstrating an open circuit voltage of 1 volt for a cell base thickness of 1 micron with a 0.5 micron emitter. This technology will result in a revolutionary improvement in survivability, performance, and manufacturability of lightweight GaAs solar cell products for future Earth-orbiting science and space exploration missions. The thin, electrostatically bonded, all back contact GaAs device technology has multiple uses for specialty high performance solar cells and other optoelectronic devices.

Hannon, M. H.↗

Recommendations for Data-in-Transit Requirements for Securing DER Communications

With the adoption of Distributed Energy Resource (DER) interoperability standards, common communication protocols are now being deployed between power system operators and DER devices. In 2018, a revision to the US interconnection and interoperability standard, Institute of Electrical and Electronics Engineers (IEEE) Std. 1547, required DER equipment to have an IEEE 2030.5, IEEE 1815, or SunSpec Modbus communication exchange interface. This change supports the future transition to secure connection and exchange of information between the DER equipment and implementing parties, such as grid operators. Adoption of standardized communication protocols and associated information models is a critical step toward interoperability between power system operators and DER, such as photovoltaic (PV) and energy storage systems. However, security requirements for these standardized communication protocols are not comprehensive, resulting in non-standard and vendor-specific implementation that may leave DER equipment susceptible to cyberattacks. This paper examines the data-in-flight security requirements for standardized DER communication protocols, per IEEE 1547-2018 revision, as it relates to device authentication, key management, and encryption. The state of the art for these security features is also explored, addressing their impact on communication and performance of low-cost single board computers, which are typical of DER devices. In conclusion, a recommendation is provided to adopt a common set of communication requirements, which are intended to achieve interoperability and implement data security over DER network pathways, while ensuring reliable, secure, and real-time information delivery.

42 ENGINEERING↗

Millimeter wave traveling wave tubes for the 21st Century

Traveling wave tubes are rapidly evolving to provide unprecedented power level in comparison to solid state devices in the millimeter waves region of the spectrum (80–300 GHz) thus enabling a wide range of applications. Wireless communications, imaging, plasma diagnostics, healthcare and many others will gain substantial features if high power at millimeter waves would be available from compact sources. The development of fabrication technologies is proving crucial for introducing new topologies and structures for millimeter wave vacuum electronic devices, compatible with the dimensions dictated by the short wavelength that poses substantial manufacturing challenges due to tight tolerances. This review paper will provide an overview of the principles, evolution and state of the art of one of the most widely utilized vacuum electronic device, the traveling wave tube (TWT). The wide band, high gain features of TWTs make those devices the most promising solutions for high power at millimeter waves and THz frequencies.

42 ENGINEERING↗

Roadmap on energy harvesting materials

Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.

14 SOLAR ENERGY↗

Early-Time (E1) High-Altitude Electromagnetic Pulse Effects on Transient Voltage Surge Suppressors

Determining the effectiveness of surge and pulse protection devices in the United States power grid against effects of a High-Altitude Electromagnetic Pulse (HEMP) is crucial in determining the present state of grid resilience. Transient Voltage Surge Suppressors (TVSS) are used to protect loads in substations from transient overvoltages. Designed to mitigate the effects of lightning, their response to a HEMP event is unknown and was determined. TVSSs were tested in two unique configurations using a pulser that generates pulses in the tens of nanoseconds scale to determine their protective capability as well as to determine their self-resilience against HEMP pulses. Testing concluded that TVSS devices adequately protect against microsecond scale pulses like lightning but do not protect against pulses resembling HEMP events. It suggests that TVSS devices should not be relied upon to mitigate the effects of HEMP pulses.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Advanced electrical power system technology for the all electric aircraft

The application of advanced electric power system technology to an all electric airplane results in an estimated reduction of the total takeoff gross weight of over 23,000 pounds for a large airplane. This will result in a 5 to 10 percent reduction in direct operating costs (DOC). Critical to this savings is the basic electrical power system component technology. These advanced electrical power components will provide a solid foundation for the materials, devices, circuits, and subsystems needed to satisfy the unique requirements of advanced all electric aircraft power systems. The program for the development of advanced electrical power component technology is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and load management devices. Examples of progress in each of the five areas are discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 microsec rise and fall time are presented. A class of semiconductor devices with a possibility of switching up to 100 kV is described. Solid state power controllers for load management at 120 to 1000 V and power levels to 25 kW were developed along with a 25 kW, 20 kHz transformer weighing only 3.2 kg.

Finke, R. C.↗

Advanced electrical power system technology for the all electric aircraft

The application of advanced electric power system technology to an all electric airplane results in an estimated reduction of the total takeoff gross weight of over 23,000 pounds for a large airplane. This will result in a 5 to 10 percent reduction in direct operating costs (DOC). Critical to this savings is the basic electrical power system component technology. These advanced electrical power components will provide a solid foundation for the materials, devices, circuits, and subsystems needed to satisfy the unique requirements of advanced all electric aircraft power systems. The program for the development of advanced electrical power component technology is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and load management devices. Examples of progress in each of the five areas are discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 microsec rise and fall time are presented. A class of semiconductor devices with a possibility of switching up to 100 kV is described. Solid state power controllers for load management at 120 to 1000 V and power levels to 25 kW were developed along with a 25 kW, 20 kHz transformer weighing only 3.2 kg. Previously announced in STAR as N83-24764

Finke, R. C.↗

An Acoustic Charge Transport Imager for High Definition Television Applications: Low-Voltage SAW Amplifiers on Multilayer GaAs/ZnO Substrates

This thesis addresses the acoustoelectric issues concerning the amplification of surface acoustic waves (SAWs) and the reflection of SAWs from slanted reflector gratings on GaAs, with application to a novel acoustic charge transport (ACT) device architecture. First a simple model of the SAWAMP was developed, which was subsequently used to define the epitaxially grown material structure necessary to provide simultaneously high resistance and high electron mobility. In addition, a segmented SAWAMP structure was explored with line widths on the order of an acoustic wavelength. This resulted in the demonstration of SAWAMPS with an order of magnitude less voltage and power requirements than previously reported devices. A two-dimensional model was developed to explain the performance of devices with charge confinement layers less then 0.5 mm, which was experimentally verified. This model was extended to predict a greatly increased gain from the addition of a ZnO overlay. These overlays were experimentally attempted, but no working devices were reported due to process incompatibilities. In addition to the SAWAMP research, the reflection of SAWs from slanted gratings on GaAs was also studied and experimentally determined reflection coefficients for both 45 deg grooves and Al stripes on GaAs have been reported for the first time. The SAWAMp and reflector gratings were combined to investigate the integrated ring oscillator for application to the proposed ACT device and design parameters for this device have been provided.

Hunt, W. D.↗

CCD Memory

CCD memory device yields over 6.4 x 10 to the eighth power levels of information on single chip. Charge-coupled device (CCD) demonstrated to operate as either read-only-memory (ROM) or photon-programmable memory with capacity of 640,000 bits, with each bit capable of being weighted to more than 1,000 discrete analog levels. Larger memory capacities now possible using proposed approach in conjunction with CCD's now being fabricated, which yield over 4 x 10 to the ninth power discrete levels of information on single chip.

Janesick, James R.↗

Optimizing Phase Change Composite Thermal Energy Storage Using the Thermal Ragone Framework

The thermal Ragone framework can be applied to the design of thermal energy storage heat exchangers to identifying relationships between their power requirements and energy capabilities. This presentation focuses on the design of planar thermal energy storage heat exchangers with phase change materials and thermal conductivity additives. Finite-difference models were used to optimize thermal storage heat exchanger designs focusing on key design parameters of conductivity additive volume fraction, spacing between tubes, and the phase transition temperatures. Design trends were developed for optimal designs based on varying thermal power requirements. To aid in future device design, models of reduced complexity were developed with the ability to predict optimal designs with computational speeds up to 5,000 times faster than finite-difference models.

ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION,↗

Power requirements for space crystal growth

The need for power to grow silicon of a size suitable to make into devices is addressed. The expected results are tied to available power. The projection of the size of float zone crystals as a function of time is discussed. An accompanying graph shows that 4 in. will be the normally used diameter by 1985 and 5 in. by 1990. Material to be tested in device lines in this time frame should be 4 in. or more. The various power losses, 25 kW with a 50% power efficiency, which is much improved over present RF heating efficiencies.

Kern, E. L.↗