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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,477 records · Page 82
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Ultralow-frequency collective compression mode and strong interlayer coupling in multilayer black phosphorus

The recent renaissance of black phosphorus (BP) as a two-dimensional (2D) layered material has generated tremendous interest, but its unique structural characters underlying many of its outstanding properties still need elucidation. Here we report Raman measurements that reveal an ultralow-frequency collective compression mode (CCM) in BP, which is unprecedented among similar 2D layered materials. This novel CCM indicates an unusually strong interlayer coupling, and this result is quantitatively supported by a phonon frequency analysis and first-principles calculations. Moreover, the CCM and another branch of low-frequency Raman modes shift sensitively with changing number of layers, allowing an accurate determination of the thickness up to tens of atomic layers, which is considerably higher than previously achieved by using high-frequency Raman modes. Lastly, these findings offer fundamental insights and practical tools for further exploration of BP as a highly promising new 2D semiconductor.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Plasmon coupling in topological insulator multilayers

Topological insulators (TIs) house two-dimensional Dirac plasmons on their surfaces. In TI thin films, plasmons on the top and bottom surfaces couple electrostatically, giving rise to an acoustic and an optical plasmon mode. By extension, a superlattice comprising TI layers and trivially-insulating layers could house multiple complex plasmon modes which could be used to create a new type of Dirac metamaterial. In this paper, we synthesize TI superlattices, fabricate them into stripe arrays, characterize their optical and plasmonic properties, and model the samples using transfer matrices. Furthermore, we excite plasmon modes that couple to the phonons in the superlattice, resulting in hybrid plasmon phonon polaritons. These modes are modeled using an analytical Fano resonance model and the extracted resonant positions are reproduced by transfer matrix modeling. We also excite an epsilon-near-zero mode in the top dielectric material (Bi 0.5 In 0.5 ) 2 Se 3 . Understanding the behavior of the polariton modes in this complex system will lend insight into the many-body interaction in low-dimensional systems.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Structural Analysis of Multilayer Tapered Canted-Cosine-Theta Superconducting Magnet for the Interaction Region of Electron Ion Collider

The electron ion collider (EIC) will collide high energy and highly polarized hadron and electron beams with luminosities up to 10 34 cm -2 s -1 . The magnet designs at the interaction region (IR) are challenging due to the close proximity of the hadron and electron beams. A canted cosine theta (CCT) quadrupole magnet was designed due to the space restrictions at the IR. The CCT magnet has a tapered aperture, which allows higher gradients at the interaction point (IP) side of the magnet. The tapered geometry makes the magnet not symmetrical along the axial direction. In conclusion, to validate the design in terms of the mechanical strength and the allowed deformations, a detailed structural mechanical analysis for the tapered CCT quadrupole magnet has been carried out using the finite element method (FEM) considering both the shrinking due to cool down and the electromagnetic force on the conductors.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2017

Fabrication of Solid-State Multilayer Glass Capacitors

Alkali-free glasses show immense promise for the development of high-energy density capacitors. The high breakdown strengths on single-layer sheets of glass suggest the potential for improved energy densities over existing state-of-the art polymer capacitors. In this paper, we demonstrate the ability to package thin glass to make solid-state capacitors. Individual layers are bonded using epoxy, leading to capacitors that exhibit stable operation over the temperature range -55 °C to +65 °C. Here, this fabrication approach is scalable and allows for proof testing individual layers prior to incorporation of the stack, providing a blueprint for the fabrication of high-energy density capacitors.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Role of the (Ta/Nb)O{sub x}/Al{sub 2}O{sub 3} interface on the flatband voltage shift for Al{sub 2}O{sub 3}/(Ta/Nb)O{sub x}/Al{sub 2}O{sub 3} multilayer charge trap capacitors

The authors studied the characteristics of Si/Al{sub 2}O{sub 3}/(Ta/Nb)O{sub x}/Al{sub 2}O{sub 3}/SiO{sub 2}/Pt charge trap capacitors fabricated by atomic layer deposition and postmetallization annealing at 400 °C. Al{sub 2}O{sub 3} and (Ta/Nb)O{sub x} films are amorphous and have negligible fixed charges. In program mode, a flatband voltage (V{sub fb}) drastically shifts toward the positive direction at a short program time of 10{sup −4} s. A large V{sub fb} shift of approximately 4 V arises after programming at 1 mC/cm{sup 2} because there is a large difference in the conduction band offset between the (Ta/Nb)O{sub x}-charge trapping layer (TNO-CTL) and the Al{sub 2}O{sub 3}-blocking layer (AlO-BL) (1.8 eV). In the retention mode, most of the trapped electrons in the TNO-CTL transfers across the Al{sub 2}O{sub 3}-tunneling layer (AlO-TL) rather than the AlO-BL. The thickness of the AlO-TL affects the V{sub fb} shift degradation behavior in the retention mode. The injected electrons are dominantly located at the TNO-CTL/ALO-BL interface, determined from the thickness dependence of the TNO-CTL on the V{sub fb} shift.

42 ENGINEERING↗
DOE OSTI2015

Multilayer on-chip stacked Fresnel zone plates: Hard x-ray fabrication and soft x-ray simulations

Fresnel zone plates are widely used as x-ray nanofocusing optics. To achieve high spatial resolution combined with good focusing efficiency, high aspect ratio nanolithography is required, and one way to achieve that is through multiple e-beam lithography writing steps to achieve on-chip stacking. A two-step writing process producing 50 nm finest zone width at a zone thickness of 1.14 µm for possible hard x-ray applications is shown here. The authors also consider in simulations the case of soft x-ray focusing where the zone thickness might exceed the depth of focus. In this case, the authors compare on-chip stacking with, and without, adjustment of zone positions and show that the offset zones lead to improved focusing efficiency. The simulations were carried out using a multislice propagation method employing Hankel transforms.

Li, Kenan↗