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At least 1,477 records · Page 82
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Discovery of a weak topological insulating state and van Hove singularity in triclinic RhBi2

Abstract Time reversal symmetric (TRS) invariant topological insulators (TIs) fullfil a paradigmatic role in the field of topological materials, standing at the origin of its development. Apart from TRS protected strong TIs, it was realized early on that more confounding weak topological insulators (WTI) exist. WTIs depend on translational symmetry and exhibit topological surface states only in certain directions making it significantly more difficult to match the experimental success of strong TIs. We here report on the discovery of a WTI state in RhBi 2 that belongs to the optimal space group P $$\bar{1}$$ 1 ¯ , which is the only space group where symmetry indicated eigenvalues enumerate all possible invariants due to absence of additional constraining crystalline symmetries. Our ARPES, DFT calculations, and effective model reveal topological surface states with saddle points that are located in the vicinity of a Dirac point resulting in a van Hove singularity (VHS) along the (100) direction close to the Fermi energy ( E F ). Due to the combination of exotic features, this material offers great potential as a material platform for novel quantum effects.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Experimental observation of drumhead surface states in SrAs 3

The topological nodal-line semimetal (TNS) is a unique class of material with a one dimensional line node accompanied by a nearly dispersionless two-dimensional sur- face state. However, a direct observation of the so called drumhead surface state within current nodal-line materials is still elusive. Here, using high-resolution angle- resolved photoemission spectroscopy (ARPES) along with first-principles calculations, we report the observation of a topological nodal-loop (TNL) in SrAs 3 , whereas CaAs 3 exhibits topologically trivial state. Our data reveal that surface projections of the bulk nodal-points are connected by clear drumhead surface states in SrAs 3 . Furthermore, our magneto-transport and magnetization data clearly suggest the presence (absence) of surface state in SrAs 3 (CaAs 3 ). Notably, the observed topological states in RAs 3 (R = Ca, Sr) are well separated from other bands in the vicinity of the Fermi level. RAs 3 , thus, offers a unique opportunity to realize an archetype nodal-loop semimetal and establish a platform for gaining a deeper understanding of the quantum phase transitions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Chemical composition and temperature dependent performance of ZnO-thin film transistors deposited by pulsed and continuous spray pyrolysis

Zinc oxide thin film transistors (TFTs) deposited by continuous and pulsed spray pyrolysis were investigated to analyze process kinetics which make reduction of process temperature possible. Thus, fluid mechanics, chemical composition, electrical performance, and deposition and annealing temperature were systematically analyzed. It was found that ZnO layers continuously deposited at 360 °C contained zinc oxynitrides, CO{sub 3}, and hydro carbonate groups from pyrolysis of basic zinc acetate. Statistically, every second wurtzite ZnO unit cell contained an impurity atom. The purity and performance of the ZnO-TFTs increased systematically with increasing deposition temperature due to an improved oxidation processes. At 500 °C the zinc to oxygen ratio exceeded a high value of 0.96. Additionally, the ZnO film was not found to be in a stabilized state after deposition even at high temperatures. Introducing additional subsequent annealing steps stabilizes the film and allows the reduction of the overall thermal stress to the substrate. Further improvement of device characteristics was obtained by pulsed deposition which allowed a more effective transport of the by-products and oxygen. A significant reduction of the deposition temperature by 140 °C was achieved compared to the same performance as in continuous deposition mode. The trap density close to the Fermi energy could be reduced by a factor of two to 4 × 10{sup 17} eV{sup −1} cm{sup −3} due to the optimized combustion process on the surface. The optimization of the deposition processes made the fabrication of TFTs with excellent performance possible. The mobility was high and exceeded 12 cm{sup 2}/V s, the subthreshold slope was 0.3 V dec{sup −1}, and an on-set close to the ideal value of 0 V was achieved.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Photoconductivity in Dirac materials

Two-dimensional (2D) Dirac materials including graphene and the surface of a three-dimensional (3D) topological insulator, and 3D Dirac materials including 3D Dirac semimetal and Weyl semimetal have attracted great attention due to their linear Dirac nodes and exotic properties. Here, we use the Fermi’s golden rule and Boltzmann equation within the relaxation time approximation to study and compare the photoconductivity of Dirac materials under different far- or mid-infrared irradiation. Theoretical results show that the photoconductivity exhibits the anisotropic property under the polarized irradiation, but the anisotropic strength is different between 2D and 3D Dirac materials. The photoconductivity depends strongly on the relaxation time for different scattering mechanism, just like the dark conductivity.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Surface chemical reactivity of ultrathin Pd(111) films on Ru(0001): Importance of orbital symmetry in the application of the d -band model

The chemical bonding of adsorbate molecules on transition-metal surfaces is strongly influenced by the hybridization between the molecular orbitals and the metal d-band. The strength of this interaction is often correlated with the location of the metal d-band center relative to the Fermi level. Here, we exploit finite size effects in the electronic structure of ultrathin Pd(111) films grown on Ru(0001) to tune their reactivity by changing the film thickness one atom layer at a time, while keeping all other variables unchanged. Interestingly, while bulk Pd(111) is reactive toward oxygen, Pd(111) films below five monolayers are surprisingly inert. This observation is fully in line with the d-band model prediction when applied to the orbitals involved in the bonding. The shift of the d-band center with film thickness is primarily attributed to shifts in the partial density of states associated with the 4d xz and 4d yz orbitals. This study provides an in-depth look into the orbital specific contributions to the surface chemical reactivity, providing new insights that could be useful in surface catalysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr{sub 3} furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr{sub 3} diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr{sub 3} diffusion.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Nature of the Interfaces Between Stoichiometric and Under-Stoichiometric MoO 3 and 4,4'- N , N '-dicarbazole-biphenyl: A Combined Theoretical and Experimental Study

A combination of density functional theory and experimental measurements via ultraviolet and X-ray photoelectron spectroscopies is used to explore the nature of the interface between the stoichiometric molybdenum trioxide (MoO3) or its under-stoichiometric counterpart with oxygen vacancies, and an organic hole-transport layer represented by 4,4'-N,N'-dicarbazole-biphenyl (CBP). Upon adsorption of CBP, special attention is paid to i) the appearance of gap states and the reduction of the molybdenum oxide surface, and ii) the evolution of the work function. Very good agreement is found between theory and experiment. The near alignment of the CBP highest occupied molecular orbital with the Fermi level and the conduction band edge of molybdenum oxide points to facile hole collection or injection.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A method to determine the electric field of liquid argon time projection chambers using a UV laser system and its application in MicroBooNE

Liquid argon time projection chambers (LArTPCs) are now a standard detector technology for making accelerator neutrino measurements, due to their high material density, precise tracking, and calorimetric capabilities. An electric field (E-field) is required in such detectors to 2020 JINST 15 P07010 drift ionization electrons to the anode where they are collected. The E-field of a TPC is often approximated to be uniform between the anode and the cathode planes. However, significant distortions can appear from effects such as mechanical deformations, electrode failures, or the accumulation of space charge generated by cosmic rays. The latter effect is particularly relevant for detectors placed near the Earth’s surface and with large drift distances and long drift time. To determine the E-field in situ, an ultraviolet (UV) laser system is installed in the MicroBooNE experiment at Fermi National Accelerator Laboratory. The purpose of this system is to provide precise measurements of the E-field, and to make it possible to correct for 3D spatial distortions due to E-field non-uniformities. Here we describe the methodology developed for deriving spatial distortions, the drift velocity and the E-field from UV-laser measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2019

Atom-in-jellium equations of state in the high-energy-density regime

Recent path-integral Monte Carlo and quantum molecular dynamics simulations have shown that computationally efficient average-atom models can predict thermodynamic states in warm dense matter to within a few percent. One such atom-in-jellium model has typically been used to predict the electron-thermal behavior only, although it was previously developed to predict the entire equation of state (EOS). In this work, we report completely atom-in-jellium EOS calculations for Be, Al, Si, Fe, and Mo, as elements representative of a range of atomic number and low-pressure electronic structure. Comparing the more recent method of pseudoatom molecular dynamics, atom-in-jellium results were similar: sometimes less accurate, sometimes more. All these techniques exhibited pronounced effects of electronic shell structure in the shock Hugoniot which are not captured by Thomas-Fermi based EOS. These results demonstrate the value of a hierarchical approach to EOS construction, using average-atom techniques with shell structure to populate a wide-range EOS surface efficiently, complemented by more rigorous three-dimensional multiatom calculations to validate and adjust the EOS.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

NOvA Sterile Neutrino Search with Additional Systematic Constraints

The NOvA experiment measures neutrino oscillations in a nearly pure muon neutrino beam. The neutral current (NC) and the muon neutrino charged current (CC) interaction disappearance are studied to search for active-to-sterile neutrino oscillations. NOvA consists of two functionally identical detectors placed 14 mrad off-axis of the Fermi National Accelerator Laboratory's NuMI beamline. The Near Detector (ND) is located 100 meters underground on-site at Fermilab, while the Far Detector (FD) is situated on the surface 810 kilometers away at Ash River, Minnesota. The NuMI beam is capable of operating in either forward or reverse horn current modes, producing predominantly neutrino or antineutrino beams, respectively. For this analysis, a simultaneous near and far detector joint fit approach was utilized. Systematic uncertainties constrain the ND while the statistical uncertainties constrain the FD. In addition to the dual baseline approach, the neutrino-on-electron elastic scattering sample was included. This interaction is advantageous as it is subject to minimal cross-section uncertainties, which will help reduce degeneracies between other uncertainty categories. This thesis presents the sterile neutrino oscillation sensitivity results using 27.2e+20 POT in FHC mode, 12.6e+20 in RHC mode, with the nu-on-e sample of 13.6e+20 POT in FHC.

Oh, Haejun [Cincinnati U.]↗
DOE OSTI2017

Graphene Charge Transfer, Spectroscopy, and Photochemical Reactions

This project focused on the special electronic and optical properties of graphene and adsorbed molecular species. Graphene makes an excellent substrate for current collection in nanostructured photovoltaic designs. Graphene is almost transparent, and can be used as a solar cell window. It also has no surface states, and thus current is efficiently transported over long distances. Progress in graphene synthesis indicates that there will soon be practical methods for making large pieces of graphene for devices. We now need to understand exactly what happens to both ground state and electronically excited molecules and Qdots near graphene, if we are going to use them to absorb light in a nano-structured photovoltaic device using graphene to collect photocurrent. We also need to understand how to shift the graphene Fermi level, to optimize the kinetics of electron transfer to graphene. And we need to learn how to convert local graphene areas to semiconductor structure, to make useful spatially patterned graphenes. In this final report, we describe how we addressed these goals. We explored the question of possible Surface Enhanced Raman spectroscopy from molecular Charge Transfer onto Graphene substrates. We observed strong hole doping of graphene by adsorbed halogens as indicated by the shift of the graphene G Raman band. In the case of iodine adsorption, we also observed the anionic species made by hole doping. At low frequency in the Raman spectrum, we saw quite intense lines from I 3 - and I 5 - , suggesting possible SERS. We reported on Fresnel calculations on this thin film system, which did not show any net electromagnetic field enhancement.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Characterization of one-dimensional molecular chains of 4,4′-biphenyl diisocyanide on Au(111) by scanning tunneling microscopy

The morphology and electronic structure of vapor deposited 4,4′-biphenyldiisocyanide (BPDI) on a Au(111) surface were investigated using variable-temperature scanning tunneling microscopy. When deposited at room temperature, BPDI molecules form one-dimensional molecular chains similar to that recently observed for the structurally related 1,4-phenyl diisocyanide (PDI). Compared to PDI, the longer periodicity for the BPDI molecular chains is consistent with the addition of a second phenyl ring and supports a structural model in which the BPDI molecules lie parallel to the surface and interconnected by Au-adatoms. The molecular chains are mostly aligned along the [11{sup -}0] direction of the Au(111) substrate, but exhibit frequent changes in angle that are consistent with directions between fcc and hcp three-fold hollow sites. Dispersion-corrected density functional theory calculations for one-dimensional chains of BPDI molecules bound end-to-end via their isocyanide groups to Au-adatoms reproduce the observed periodicity of the chains and show that this morphology is energetically favored over upright binding with one free —NC group. The spatially resolved conductance (dI/dV) map for BPDI on Au(111) exhibits a feature centered at −0.67 eV below the Fermi level which are delocalized along the chain with maxima at the Au-adatom and biphenyl positions. This occupied resonant feature is close to that previously observed for the PDI in both photoemission and conductance measurements and is attributed to an occupied interfacial state resulting from BPDI-Au interactions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Investigation of the Selectivity of Carrier Transport Layers in Wide-Bandgap Perovskite Solar Cells

Excellent contact passivation and selectivity are prerequisites to realize the full potential of high-material-quality perovskite solar cells, first to maximize the internal voltage (or quasi-Fermi-level separation) iV within the absorber, then to translate this high internal voltage into a high external voltage V. Experimental quantification of contact passivation and selectivity is, thus, key to improving device performance. Here, open-circuit measurements of iV oc and V oc , combined with surface photovoltage measurements, are used to systematically quantify the passivation—using iVoc as a metric—and the selectivity—defined as Soc=V oc /iV oc —of a range of common carrier transport layers to wide-bandgap (1.67 eV) perovskite absorbers. The resulting solar cells suffer from large voltage deficits, particularly when NiO x is used as the hole transport layer, even though it provides better passivation than its polymer-based counterparts (PTAA and PTAA/PFN). This indicates a poor selectivity of NiO x (Soc<0.81 for NiO x -based devices), whereas devices using polymer-based hole transport layers exhibit high selectivity (S oc =0.94–0.95). In agreement with recent reports, this low selectivity is attributed to the formation of an interlayer of non-perovskite material with high resistance to holes at the perovskite/NiO x interface. These measurements also imply that the selectivity of the C60-based electron transport layers is relatively good.

carrier transport layers↗
DOE OSTI2017

Tunable UV-Emitters through Graphene Plasmonics

Control over the spontaneous emission of light through tailored optical environments remains a fundamental paradigm in nanophotonics. The use of highly confined plasmons in materials such as graphene provides a promising platform to enhance transition rates in the IR-THz by many orders of magnitude. However, such enhancements involve near-field plasmon modes or other kinds of near-field coupling like quenching, and it is challenging to use these highly confined modes to harness light in the far-field due to the difficulty of plasmonic outcoupling. Here in this paper, we propose that through the use of radiative cascade chains in multilevel emitters, IR plasmons can be used to enhance far field spectra in the visible and UV range, even at energies greater than 10 eV. Combining Purcell-enhancement engineering, graphene plasmonics, and radiative cascade can result in a new type of UV emitter whose properties can be tuned by electrically doping graphene. Varying the distance between the emitter and the graphene surface can change the strength of the far-field emission lines by 2 orders of magnitude. We also find that the dependence of the far-field emission on the Fermi energy is potentially extremely sharp at the onset of interband transitions, allowing the Fermi energy to effectively serve as a “switch” for turning on and off certain plasmonic and far-field emissions.

42 ENGINEERING↗
DOE OSTI2017

Moving towards the magnetoelectric graphene transistor

Here, the interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr 2 O 3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Topological Semimetal features in the Multiferroic Hexagonal Manganites

Using first-principles calculations we investigate the band structures of ferromagnetic hexagonal manganites $\mathrm{YXO_3}$ (X=V, Cr, Mn, Fe and Co) in the nonpolar nonsymmorphic $P6_3/mmc$ space group. For $\mathrm{YVO_3}$ and $\mathrm{YCrO_3}$ we find a band inversion near the Fermi energy that generates a nodal ring in the $k_z=0$ mirror plane. We perform a more detailed analysis for these compounds and predict the existence of the topological "drumhead" surface states. Finally, we briefly discuss the low-symmetry polar phases (space group $P6_3cm$) of these systems, and show they can undergo a $P6_3/mmc \rightarrow P6_3cm$ transition by condensation of soft $K_3$ and $\Gamma_2^-$ phonons. Based on our results, stabilizing these compnds in the hexagonal phase could offer a promising platform for studying the interplay of topology and multiferroicity, and the coexistence of real-space and reciprocal-space topological protection in the same phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1991

X-ray photoelectron spectroscopy study of chemically-etched Nd-Ce-Cu-O surfaces

Acetic acid, Br2, and HCl solutions are investigated for removing insulating species from Nd(1.85)Ce(0.15)CuO(4-delta) (NCCO) thin film surfaces. X-ray photoelectron spectroscopy (XPS) shows that the HCl etch is most effective, yielding O 1s spectra comparable to those obtained from samples cleaned in vacuum and a clear Fermi edge in the valence band region. Reduction and oxidation reversibly induces and eliminates, respectively, Fermi level states for undoped samples, but has no clearly observable effect on the XPS spectra for doped samples. Reactivity to air is much less for NCCO compared to hole superconductors, which is attributed to the lack of reactive alkaline earth elements in NCCO.

Vasquez, R. P.↗
DOE OSTI2025

The Surface Chemistry of Methanol on Cu 3 Pd(111): Effects of Metal Alloying and Reaction with Hydrogen

Synchrotron-based ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) was used to study the adsorption and surface chemistry of methanol on a Cu 3 Pd(111) model surface. The composition and morphological properties of the pristine Cu 3 Pd(111) substrate were analyzed using a combination of low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), and low-energy ion scattering (LEIS). The results of ion scattering showed segregation of Pd toward the surface, with a Pd/Cu ratio close to 0.5, a larger value than the ratio of 0.33 expected for a Cu 3 Pd bimetallic structure. The surface of the alloy exhibited a good LEED pattern with three-fold long-range periodicities. In STM, clusters of palladium with hexagonal arrays and Pd- Pd distances of 2.7-2.8 Å were detected. Bonding to copper perturbed the electronic properties of the atoms in the Pd clusters, shifting their 4d states toward higher binding energy with respect to the Fermi level. Further, the valence band spectrum of Cu 3 Pd(111) exhibited a line shape that was very different from those displayed by Cu(111) or Pd(111). At low pressures, the adsorption of methanol on Cu 3 Pd(111) at 300 K mainly produced CH 3 O, CO and CH x species. AP-XPS showed that most Pd atoms in the surface of the Cu 3 Pd(111) alloy interacted with the decomposition products of methanol. No significant changes were observed in the core levels of copper upon the adsorption and dissociation of methanol, suggesting that the molecule mainly interacted with Pd sites of the alloy. Reaction with hydrogen led to fast removal of CH x , C and PdC x species from Cu 3 Pd(111) at moderate (< 450 K) temperatures and prevented a CH x → C transformation. If the stability of adsorbed CH 3 O is used as a descriptor for the hydrogenation of CO 2 to methanol, Cu 3 Pd should be a much better catalyst than monometallic palladium. This may be a consequence of electronic and ensemble effects in the alloy that moderate the reactivity of Pd sites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗