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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,459 records · Page 81
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Passive wavelength tuning and multichannel photonic coupling using monolithically integrated vertical microresonators on ridge waveguides

The passive tuning of the resonant coupling wavelength in a SiN x vertical microring coupler (VμRC) monolithically integrated on a ridge waveguide by engineering the structural parameters of the VμRCs is experimentally demonstrated and theoretically verified. Multi-channel photonic coupling is achieved by integrating two different VμRCs on a single ridge waveguide. This work represents here a critical step to 3D photonic integration using VμRCs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

The flush-mounted rail Langmuir probe array designed for the Alcator C-Mod vertical target plate divertor

An array of flush-mounted and toroidally elongated Langmuir probes (henceforth called rail probes) have been specifically designed for the Alcator C-Mod’s vertical target plate divertor and operated over multiple campaigns. The “flush” geometry enables the tungsten electrodes to survive high heat flux conditions in which traditional “proud” tungsten electrodes suffer damage from melting. The toroidally elongated rail-like geometry reduces the influence of sheath expansion, which is an important effect to consider in the design and interpretation of flush-mounted Langmuir probes. The new rail probes successfully operated during C-Mod’s FY2015 and FY2016 experimental campaigns with no evidence of damage, despite being regularly subjected to heat flux densities parallel to the magnetic field exceeding ~1 GW m -2 for short periods of time. A comparison between rail and proud probe data indicates that sheath expansion effects were successfully mitigated by the rail design, extending the use of these Langmuir probes to incident magnetic field line angles as low as 0.5°.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Growth and characterization of detector-grade CdMnTe by the vertical Bridgman Technique

Here, we grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resistivity was 1-2.5 x10 10 ohm-cm with a mobility-lifetime (μτ) product value for electrons of ~1.7x10 -3 cm 2 /V. An energy resolution of ~7.5% at 662 keV was achieved or a 9-mm long Frisch grid detector fabricated from an ingot grown using as-received starting materials.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition

Here, to mimic selective-area doping, p -GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p - n diodes were fabricated to investigate the effects of the etch-then-regrowth process on device performance. The crystal quality of the sample after each epitaxial step was characterized by X-ray diffraction, where the etch-then-regrowth process led to a very slight increase in edge dislocations. A regrowth interfacial layer was clearly shown by transmission electron microscopy. Strong electroluminescence was observed with three emission peaks at 2.2 eV, 2.8 eV and 3.0 eV, respectively. The forward current density increased slightly with the increasing temperature, while the reverse current density was almost temperature independent indicating tunneling as the reverse transport mechanism. This result is very similar to the reported Zener tunnel diode comprising a high doping profile at the junction interface. High levels of silicon and oxygen concentrations were observed at the regrowth interface with a distribution width of ~100 nm. This work provides valuable information of p -GaN regrowth and regrown GaN p - n diodes, which can serve as an important reference for developing selective doping for advanced GaN power electronics for high voltage and high power applications.

42 ENGINEERING↗
DOE OSTI2019

Wafer-scale on-chip synthesis and field emission properties of vertically aligned boron nitride based nanofiber arrays

One dimensional boron nitride (BN) nanomaterials with a high aspect ratio are of great interest due to their unique properties and potential applications. However, BN nanomaterials are generally difficult to synthesize. Here, we describe the creation of arrays of vertically aligned pure BN nanofibers and BN coated carbon nanofibers, fabricated on-chip via a straightforward template-assisted chemical conversion reaction. The template, a glassy carbon nanofiber array, is produced by plasma processing of conventional photoresists. The method is highly controllable, patternable, and scalable, and the final arrays can be fabricated over large areas with a controlled fiber length. We characterize the electron field emission properties of the BN-coated carbon nanofiber array and find a large field enhancement factor, low turn-on voltage, and good stability. The outstanding field emission performance results from the small tip size and high aspect ratio of the nanofiber as well as the high chemical stability and high thermal conductivity of the BN coating.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis

In this work, steady-state photocapacitance (SSPC) was conducted on nonpolar m-plane GaN n-type Schottky diodes to evaluate the defects induced by inductively coupled plasma (ICP) dry etching in etched-and-regrown unipolar structures. An ~10× increase in the near-midgap Ec – 1.9 eV level compared to an as-grown material was observed. Defect levels associated with regrowth without an etch were also investigated. The defects in the regrown structure (without an etch) are highly spatially localized to the regrowth interface. Subsequently, by depth profiling an etched-and-regrown sample, we show that the intensities of the defect-related SSPC features associated with dry etching depend strongly on the depth away from the regrowth interface, which is also reported previously. A photoelectrochemical etching (PEC) method and a wet AZ400K treatment are also introduced to reduce the etch-induced deep levels. A significant reduction in the density of deep levels is observed in the sample that was treated with PEC etching after dry etching and prior to regrowth. An ~2× reduction in the density of Ec – 1.9 eV level compared to a reference etched-and-regrown structure was observed upon the application of PEC etching treatment prior to the regrowth. The PEC etching method is promising for reducing defects in selective-area doping for vertical power switching structures with complex geometries.

36 MATERIALS SCIENCE↗
DOE OSTI2021

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. Furthermore, this paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High-resolution radiation detection using Ni/SiO 2 /n-4H-SiC vertical metal-oxide-semiconductor capacitor

In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the highest energy resolution ever reported. The 100 nm SiO2 layer was achieved on the Si face of n-4H-SiC epilayers using dry oxidation in air. The Ni/SiO2/n-4H-SiC MOS detectors not only demonstrated an excellent energy resolution of 0.42% (ΔE/E 100) for 5.48 MeV alpha particles but also caused a lower enhancement in the electronic noise components of the spectrometer compared with that observed for the best high-resolution Schottky barrier detectors. The MOS detectors also exhibited a high charge collection efficiency (CCE) of 96% at the optimized operating bias despite the presence of the oxide layer. A drift-diffusion model applied to the CCE vs gate bias voltage data revealed a minority (hole) carrier diffusion length of 24 μm. Capacitance mode deep level transient spectroscopy (C-DLTS) scans in the temperature range 84–800 K were carried out to identify the resolution limiting electrically active defects. Interestingly, the C-DLTS spectra revealed both positive and negative peaks, indicating the simultaneous presence of electron (majority) and hole (minority) trap centers. It has been inferred that at the steady-state bias for the C-DLTS measurement, the MOS detector operates in the inversion mode at certain device temperatures, causing holes to populate the minority trap centers and, hence, manifests minority carrier peaks as well.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current, and temperature. The as-grown and regrown diodes, with and without surface treatment, have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S I , dependence on the current was S I ~ I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10 –18 –10 –16 cm 2 /Hz (f = 10 Hz) at the current density J = 1 A/cm 2 at room temperature. The noise temperature dependences at different currents revealed peaks at T = 375–400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. Here, we argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy

Deep level defects in wide bandgap semiconductors, whose response times are in the range of power converter switching times, can have a significant effect on converter efficiency. We use Deep Level Transient Spectroscopy (DLTS) to evaluate such defect levels in the n- drift layer of vertical GaN (v-GaN) power diodes with VBD ~ 1500 V. DLTS reveals three energy levels that are at ~0.6 eV (highest density), ~0.27 eV (lowest density) and ~ 45 meV (a dopant level) from the conduction band. Dopant extraction from Capacitance-Voltage measurement test (C-V) at multiple temperatures enables trap density evaluation, and the ~0.6 eV trap has a density of 1.2 × 10 15 cm -3 . Here, the 0.6 eV energy level and its density are similar to a defect that is known to cause current collapse in GaN based surface conducting devices (like HEMTs). Analysis of reverse bias currents over temperature in the v-GaN diodes indicates a predominant role of the same defect in determining reverse leakage current at high temperatures, reducing switching efficiency.

42 ENGINEERING↗
DOE OSTI2022

Bifurcation-driven vertical plasma displacement

This paper considers vertical plasma motion resulting from plasma current decay during the disruption event. The presented filament-based model describes the motion in the ideal wall limit as an adiabatically slow evolution of the plasma equilibrium. Here, the equilibrium exhibits a pitchfork bifurcation when the decaying plasma current passes a critical value determined by the external magnetic field. This bifurcation affects the disruption-induced mechanical loads on the first wall.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes

A model was developed for the operation of a GaN pn junction vertical diode which includes rate equations for carrier capture and thermally activated emission by substitutional carbon impurities and carrier generation by ionizing radiation. The model was used to simulate the effect of ionizing radiation on the charge state of carbon. These simulations predict that with no applied bias, carbon is negatively charged in the n-doped layer, thereby compensating n-doping as experimentally observed in diodes grown by metal-organic chemical vapor deposition. With reverse bias, carbon remains negative in the depletion region, i.e., compensation persists in the absence of ionization but is neutralized by exposure to ionizing radiation. This increases charge density in the depletion region, decreases the depletion width, and increases the capacitance. The predicted increase in capacitance was experimentally observed using a pulsed 70 keV electron beam as the source of ionization. In additional confirming experiments, the carbon charge-state conversion was accomplished by photoionization using sub-bandgap light or by the capture of holes under forward bias.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Vertical detachment energies of ammonia cluster anions using self-interaction-corrected methods

Systems with weakly bound extra electrons impose great challenges to semilocal density functional approximations (DFAs), which suffer from self-interaction errors. Small ammonia clusters are one such example of weakly bound anions where the extra electron is weakly bound. We applied two self-interaction correction (SIC) schemes, viz., the well-known Perdew–Zunger and the recently developed locally scaled SIC (LSIC) with the local spin density approximation (LSDA), Perdew–Burke–Ernzerhof (PBE) generalized gradient approximation (GGA), and the SCAN meta-GGA functionals to calculate the vertical detachment energies (VDEs) of small ammonia cluster anions (NH3)n–. Our results show that the LSIC significantly reduces the errors in calculations of VDE with LSDA and PBE-GGA functionals leading to better agreement with the reference values calculated with coupled cluster singles and doubles with perturbative triples [CCSD(T)]. Accurate prediction of VDE as an absolute of the highest occupied molecular orbital (HOMO) is challenging for DFAs. Our results show that VDEs estimated from the negative of HOMO eigenvalues with the LSIC-LSDA and Perdew–Zunger SIC-PBE are within 11 meV of the reference CCSD(T) results. Here, the LSIC method performs consistently well for the VDE estimates, from both the total energy differences and the absolute HOMO eigenvalues.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience in harsh environments. However, electric field crowding at the edge of the anode often limits its full potential, leading to single-event effects (SEEs) at lower bias voltages under heavy ion radiation. Here, in this work, we report on the performance of homojunction GaN vertical PiN diodes with a hybrid edge termination design under heavy ion irradiation, specifically, oxygen ions, chlorine ions, Cf-252 fission fragments, and alpha particles from an Am-241 source. The unique hybrid edge termination (HET) design provides better electric field management, preventing breakdown from occurring at the edge of the anode at lower voltages. The results of this study reveal that these devices exhibit excellent tolerance to 12-MeV oxygen and 16-MeV chlorine ions, owing to their low linear energy transfer (LET) and range in GaN. However, single-event burnout (SEB) is observed during the Cf-252 exposure at about 50% of the diodes' electrical breakdown voltage due to the presence of higher LET and longer-range ions. Optical and scanning electron microscopy (SEM) reveal that the damage that caused by SEB lies close to the center of these devices rather than the anode edge. Devices with junction termination extension (JTE) instead of HET edge termination also show similar SEB when irradiated with Cf-252 fission fragments. Physical damage due to SEB occurs at the edge of the anode for these devices. These comparative results show the benefits of HET for enhancing the resistance of GaN-based PiN diodes to heavy ion irradiation.

42 ENGINEERING↗
DOE OSTI2013

Analysis of light propagation for a crossing of thin silicon wires using vertical tunnelling coupling with a thick optical channel waveguide

Using silicon photonic wires in a silicon-on-insulator structure as an example, we examine the problem of crossings of thin, high-index-contrast channel waveguides. To ensure high optical wave transmission efficiency at as low a level of parasitic scattering as possible, we propose using a structure with vertical coupling between a thin tapered silicon waveguide and a thick polymer waveguide, separated by a thin buffer oxide layer. Numerical simulation is used to find conditions under which such a structure (3 × 90 μm in dimensions) ensures 98 % and 99 % transmission efficiency at ∼1.55 μm in 35- and 26-nm spectral ranges, respectively, for direct propagation and 99.99 % transmission in the transverse direction. The optical element in question is proposed for use in optical microchips with multiple channel waveguide crossings. (integrated optical waveguides)

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2013

Effect of nonlinear optical three-wave interaction on the lasing parameters of a dual-wavelength vertical-external-cavity surface-emitting laser

The influence of nonlinear optical interaction in a semiconductor dual-wavelength vertical-external-cavity surface-emitting laser on the main parameters of dual-wavelength radiation and lasing in the long-wavelength part of the mid-IR range, obtained in this laser as a result of nonlinear wave mixing, is investigated. An increase in the pump power leads to saturation of the short-wavelength lasing intensity and to a more rapid rise in the long-wavelength lasing intensity in comparison with the linear increase in lasing intensity in these regions in the absence of nonlinear interaction. Under the conditions of nonlinear interaction, the carrier concentration in the active layers is not stabilised near the lasing threshold but changes with an increase in the pump intensity and provides the corresponding gain in the laser active region, thus maintaining steadystate lasing. Some ways for modifying the laser active region in order to obtain the most efficient lasing in the mid-IR range are proposed. (nonlinear optical phenomena)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Amplitude/phase modulation and spectrum of the vertical-cavity surface-emitting laser output

A new approach has been proposed for analysing the dynamics of the laser field amplitude on the basis of Maxwell’s equations. This approach has been used to develop a theory for calculating modulation characteristics of vertical-cavity surface-emitting lasers in the small modulation limit. The present analysis allows one to sequentially examine the dynamics of the amplitude and phase of the electromagnetic field of light in the framework of a single physical model, proceeding from fundamental principles. The proposed approach offers a natural and unique procedure for finding all laser cavity parameters necessary for calculation. An analytical calculation in the ‘small’-signal approximation has ensured good agreement with experimental data. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks

Single-mode vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts, composite distributed Bragg reflectors, and a rhomboidal selectively-oxidised current aperture are studied. It is shown that the use of a rhomboidal current aperture allows the light output polarisation to be fixed without using a special surface relief and leads to efficient narrowing of the emission line with retaining a high slope efficiency. The developed VCSELs have a high output power (exceeding 1 mW), a threshold current below 1 mA, an effective modulation frequency exceeding 5 GHz, and a linewidth smaller than 60 MHz at increased (65 – 75 °C) temperatures and are promising for application in compact Cs vapour cell atomic clocks. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗