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At least 1,459 records · Page 81

H ingestion into He-burning convection zones in super-AGB stellar models as a potential site for intermediate neutron-density nucleosynthesis

We investigate the evolution of super-AGB (SAGB) thermal pulse (TP) stars for a range of metallicities (Z) and explore the effect of convective boundary mixing (CBM). With decreasing metallicity and evolution along the TP phase, the He-shell flash and the third dredge-up (TDU) occur closer together in time. After some time (depending upon the CBM parametrization), efficient TDU begins while the pulse-driven convection zone (PDCZ) is still present, causing a convective exchange of material between the PDCZ and the convective envelope. This results in the ingestion of protons into the convective He-burning pulse. Even small amounts of CBM encourage the interaction of the convection zones leading to transport of protons from the convective envelope into the He layer. H-burning luminosities exceed 10 9 (in some cases 10 10 ) L⊙. We also calculate models of dredge-out in the most massive SAGB stars and show that the dredge-out phenomenon is another likely site of convective-reactive H- 12 C combustion. We discuss the substantial uncertainties of stellar evolution models under these conditions. Nevertheless, the simulations suggest that in the convective-reactive H-combustion regime of H ingestion the star may encounter conditions for the intermediate neutron capture process (i-process). We speculate that some CEMP-s/r stars could originate in i-process conditions in the H ingestion phases of low-Z SAGB stars. This scenario would however suggest a very low electron-capture supernova rate from SAGB stars. Here, we also simulate potential outbursts triggered by such H ingestion events, present their light curves and briefly discuss their transient properties.

79 ASTRONOMY AND ASTROPHYSICS↗

β Decay of 61 V and its Role in Cooling Accreted Neutron Star Crusts

The interpretation of observations of cooling neutron star crusts in quasipersistent x-ray transients is affected by predictions of the strength of neutrino cooling via crust Urca processes. The strength of crust Urca neutrino cooling depends sensitively on the electron-capture and β -decay ground-state-to-ground-state transition strengths of neutron-rich rare isotopes. Nuclei with a mass number of A = 61 are predicted to be among the most abundant in accreted crusts, and the last remaining experimentally undetermined ground-state-to-ground-state transition strength was the β decay of 61 V. This Letter reports the first experimental determination of this transition strength, a ground-state branching of $8.1^{+4.0}_{- 3.1}%$, corresponding to a log ft value of $5.5^{+0.2}_{-0.2}$. This result was achieved through the measurement of the β -delayed γ rays using the total absorption spectrometer SuN and the measurement of the β -delayed neutron branch using the neutron long counter system NERO at the National Superconducting Cyclotron Laboratory at Michigan State University. This method helps to mitigate the impact of the pandemonium effect in extremely neutron-rich nuclei on experimental results. The result implies that A = 61 nuclei do not provide the strongest cooling in accreted neutron star crusts as expected by some predictions, but that their cooling is still larger compared to most other mass numbers. Finally, only nuclei with mass numbers 31, 33, and 55 are predicted to be cooling more strongly. However, the theoretical predictions for the transition strengths of these nuclei are not consistently accurate enough to draw conclusions on crust cooling. With the experimental approach developed in this work, all relevant transitions are within reach to be studied in the future.

79 ASTRONOMY AND ASTROPHYSICS↗

Multi-Port Autonomous Reconfigurable Solar Power Plant

As the penetration level of power electronics increases and remote photovoltaic (PV) generation is integrated into the alternating current (ac) grid, the short-circuit ratio (SCR) at the point of interconnection of a hybrid PV–energy storage system (ESS) plant may be low. Additionally, the inertia of the alternating current (ac) grid may be low. The low SCRs and inertias can lead to reliability challenges in the power grid. These operating conditions require additional reinforcements, such as synchronous condensers, static var compensators, static synchronous compensators, and high-voltage direct current (HVdc) links/grids. HVdc links or grids may also provide the additional capability of connecting the plant to asynchronous grids and/or connecting asynchronous grids, among others. This scenario leads to discrete development of solar inverters, energy storage inverters, HVdc converters, and several transformers. Some of the problems associated with this discrete development and inverter-based generation include increased cost, lower reliability, and reduced efficiency associated with duplication of power electronics (PEs); competing controls of several individual discrete inverter-based generators due to the presence of multiple PEs, which leads to derating of the system; and transient stability problems arising from inverter-based generation, such as voltage/frequency events leading inverter shutdowns, voltage instability and control interactions in the formed weak grid, and harmonics caused by resonances of multiple inverters.

14 SOLAR ENERGY↗

On the importance of reverse current ohmic losses in electron-heated solar flare atmospheres

The paper considers the passage of a beam of nonthermal electrons through the flaring solar atmosphere, paying particular attention to the requirement that the beam be stable to the generation of plasma turbulence. The ratio of energy losses due to reverse current ohmic heating and heating by Coulomb collisions, respectively, for the greatest flux which can pass stably through the atmosphere is computed. It is shown that this ratio is determined by the low energy cutoff of the beam, by the electron temperature of the ambient atmosphere, and by the electron to ion temperature ratio theta. It is also independent of the atmospheric density. The results show that ohmic energy losses are undoubtedly important in the initial transient state, in agreement with other authors, but that their role is debatable in the flare atmosphere, depending on the value of theta appropriate.

Emslie, A. G.↗

Environmentally-induced discharge transient coupling to spacecraft

The Hughes SCREENS (Space Craft Response to Environments of Space) technique was applied to generic spin and 3-axis stabilized spacecraft models. It involved the NASCAP modeling for surface charging and lumped element modeling for transients coupling into a spacecraft. A differential voltage between antenna and spun shelf of approx. 400 V and current of 12 A resulted from discharge at antenna for the spinner and approx. 3 kv and 0.3 A from a discharge at solar panels for the 3-axis stabilized Spacecraft. A typical interface circuit response was analyzed to show that the transients would couple into the Spacecraft System through ground points, which are most vulnerable. A compilation and review was performed on 15 years of available data from electron and ion current collection phenomena. Empirical models were developed to match data and compared with flight data of Pix-1 and Pix-2 mission. It was found that large space power systems would float negative and discharge if operated at or above 300 V. Several recommendations are given to improve the models and to apply them to large space systems.

Viswanathan, R.↗

Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). Introduction: This paper is a summary of test results.NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment is often limited by its susceptibility to single event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is quite difficult. Given the rapidly changing nature of technology, radiation test data are most often application-specific and adequate understanding of the test conditions is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transient (SET), TID, enhanced low dose rate sensitivity (ELDRS), and DD effects.

Single Event Effects↗

Spherical Occulter Coronagraph Cubesat

The present invention relates to a space-based instrument which provides continuous coronal electron temperature and velocity images, for a predetermined period of time, thereby improving the understanding of coronal evolution and how the solar wind and Coronal Mass Ejection transients evolve from the low solar atmosphere through the heliosphere for an entire solar rotation. Specifically, the present invention relates to using a 6U spherical occulter coronagraph CubeSat, and a relative navigational system (RNS) that controls the position of the spacecraft relative to the occulting sphere. The present invention innovatively deploys a free-flying spherical occulter, and after deployment, the actively controlled CubeSat will provide an inertial formation flying with the spherical occulter and Sun.

Davila, Joseph M.↗

SA13B-1900 Auroral Charging of the International Space Station

Electrostatic potential variations of the International Space Station (ISS) relative to the space plasma environment are dominated by interaction of the negatively grounded 160 volt US photovoltaic power system with the plasma environment in sunlight and inductive potential variations across the ISS structure generated by motion of the vehicle across the Earth's magnetic field. Auroral charging is also a source of potential variations because the 51.6? orbital inclination of ISS takes the vehicle to sufficiently high magnetic latitudes to encounter precipitating electrons during geomagnetic storms. Analysis of auroral charging for small spacecraft or isolated insulating regions on ISS predict rapid charging to high potentials of hundreds of volts but it has been thought that the large capacitance of the entire ISS structure on the order of 0.01 F will limit frame potentials to less than a volt when exposed to auroral conditions. We present three candidate auroral charging events characterized by transient ISS structure potentials varying from approximately 2 to 17 volts. The events occur primarily at night when the solar arrays are unbiased and cannot therefore be due to solar array current collection. ISS potential decreases to more negative values during the events indicating electron current collection and the events are always observed at the highest latitudes along the ISS trajectory. Comparison of the events with integral >30 keV electron flux measurements from NOAA TIROS spacecraft demonstrate they occur within regions of precipitating electron flux at levels consistent with the energetic electron thresholds reported for onset of auroral charging of the DMSP and Freja satellites. In contrast to the DMSP and Freja events, one of the ISS charging events occur in sunlight.

Minow, Joseph I.↗

Proton Effects and Test Issues for Satellite Designers: Displacement Effects - Section 4

Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects described in section IVA. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses [Srou88a, Summ92, Hopk97] which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves.

Marshall, Cheryl J.↗

DLTS Investigation of the Energy Spectrum of Si:Mg Crystals

Electrically active centers in n-type magnesium-doped silicon crystals are studied by deep-level transient spectroscopy (DLTS). Magnesium is introduced by diffusion from a metal film on the surface at 1100°C. It is found that two levels with a similar concentration of ~6 × 10{sup 14} cm{sup –3} dominate in the DLTS spectrum; the value approximately corresponds to the interstitial magnesium (Mg{sub i}) concentration expected from diffusion conditions and published data on the Hall effect. The dependence of the electron emission rate from these levels on the electric-field strength agrees qualitatively with the Poole–Frenkel effect, which indicates the donor nature of both levels, although the absolute value of the effect differs from theoretical value. The activation energies of these levels found by the extrapolation of emission rates measured at various temperatures to zero field are 112 and 252 meV, which coincides within the accuracy with energies of ground states of the first and second donor levels of Mg determined previously from optical absorption. Thus, it is shown that when using high-quality initial material and the selected diffusion mode, interstitial magnesium atoms are the dominant centers with levels in the upper half of the band gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance

This study explores the radiation resilience of GaN high-electron-mobility transistors (HEMTs) under various preconditioning treatments—pristine, electro-pulsed, electrically overstressed, and 60 Co gamma-irradiated—with a focus on enhancing survivability in high-radiation environments. Key findings emphasize the gate region’s central role in radiation sensitivity, with increased defect concentrations leading to reduced sensitivity—as determined from reduced single-event transient intensities during pulsed-laser studies—and impacting charge-transport dynamics. Notably, the most sensitive region shifted as a function of bias state, with the drain side of the gate being most sensitive under negative gate bias and the source side under unbiased conditions due to two-dimensional electron gas disruptions. These insights clarify the mechanisms influencing radiation sensitivity in microelectronics and highlight the potential of defect and strain engineering to enhance the radiation hardness of GaN HEMTs across various operational states, providing valuable guidance for applications in space, defense, and other radiation-rich environments.

36 MATERIALS SCIENCE↗

Radiation-Induced Oxidation Reactions of 2-Selenouracil in Aqueous Solutions: Comparison with Sulfur Analog of Uracil

One-electron oxidation of 2-selenouracil (2-SeU) by hydroxyl (●OH) and azide (●N3) radicals leads to various primary reactive intermediates. Their optical absorption spectra and kinetic characteristics were studied by pulse radiolysis with UV-vis spectrophotometric and conductivity detection and by the density functional theory (DFT) method. The transient absorption spectra recorded in the reactions of ●OH with 2-SeU are dominated by an absorption band with an λmax = 440 nm, the intensity of which depends on the concentration of 2-SeU and pH. Based on the combination of conductometric and DFT studies, the transient absorption band observed both at low and high concentrations of 2-SeU was assigned to the dimeric 2c-3e Se-Se-bonded radical in neutral form (2●). The dimeric radical (2●) is formed in the reaction of a selenyl-type radical (6●) with 2-SeU, and both radicals are in equilibrium with Keq = 1.3 × 104 M−1 at pH 4 (below the pKa of 2-SeU). Similar equilibrium with Keq = 4.4 × 103 M−1 was determined for pH 10 (above the pKa of 2-SeU), which admittedly involves the same radical (6●) but with a dimeric 2c-3e Se-Se bonded radical in anionic form (2●−). In turn, at the lowest concentration of 2-SeU (0.05 mM) and pH 10, the transient absorption spectrum is dominated by an absorption band with an λmax = 390 nm, which was assigned to the ●OH adduct to the double bond at C5 carbon atom (3●) based on DFT calculations. Similar spectral and kinetic features were also observed during the ●N3-induced oxidation of 2-SeU. In principle, our results mostly revealed similarities in one-electron oxidation pathways of 2-SeU and 2-thiouracil (2-TU). The major difference concerns the stability of dimeric radicals with a 2c-3e chalcogen-chalcogen bond in favor of 2-SeU.

2-selenouracil↗

A HARD X-RAY POWER-LAW SPECTRAL CUTOFF IN CENTAURUS X-4

The low-mass X-ray binary (LMXB) Cen X-4 is the brightest and closest (<1.2 kpc) quiescent neutron star transient. Previous 0.5-10 keV X-ray observations of Cen X-4 in quiescence identified two spectral components: soft thermal emission from the neutron star atmosphere and a hard power-law tail of unknown origin. We report here on a simultaneous observation of Cen X-4 with NuSTAR (3-79 keV) and XMM-Newton (0.3-10 keV) in 2013 January, providing the first sensitive hard X-ray spectrum of a quiescent neutron star transient. The 0.3-79 keV luminosity was 1.1×10{sup 33} D{sub kpc}{sup 2} erg s{sup –1}, with ≅60% in the thermal component. We clearly detect a cutoff of the hard spectral tail above 10 keV, the first time such a feature has been detected in this source class. We show that thermal Comptonization and synchrotron shock origins for the hard X-ray emission are ruled out on physical grounds. However, the hard X-ray spectrum is well fit by a thermal bremsstrahlung model with kT{sub e} = 18 keV, which can be understood as arising either in a hot layer above the neutron star atmosphere or in a radiatively inefficient accretion flow. The power-law cutoff energy may be set by the degree of Compton cooling of the bremsstrahlung electrons by thermal seed photons from the neutron star surface. Lower thermal luminosities should lead to higher (possibly undetectable) cutoff energies. We compare Cen X-4's behavior with PSR J1023+0038, IGR J18245–2452, and XSS J12270–4859, which have shown transitions between LMXB and radio pulsar modes at a similar X-ray luminosity.

79 ASTRONOMY AND ASTROPHYSICS↗

Recent Development of Frequency Estimation Methods for Future Smart Grid

The frequency estimated by the Phasor Measurement Unit (PMU) is a critical index of power system status and supports many smart grid applications. The future smart grid features high penetration of renewables and more fast-moving power electronics inverters but raises challenges to the reliable frequency estimation. This article presents three methods to address these challenges. First, an enhanced zero-crossing algorithm was developed to track the fast-changing frequency in system dynamics. Second, we propose a technology that can tolerate the system transient and suppress the outliers. Third, an algorithm was developed to export high time-resolution frequency estimations with minimum computational effort. All of the proposed methods are realized in hardware and compared with classical frequency estimation methods. The testing results indicate that the proposed methods have excellent performance. They can be used in future PMUs and provide reliable and high time resolution data for smart grid applications.

24 POWER TRANSMISSION AND DISTRIBUTION↗

iPTF15eqv: Multiwavelength Exposé of a Peculiar Calcium-rich Transient

The progenitor systems of the class of “Ca-rich transients” is a key open issue in time domain astrophysics. These intriguing objects exhibit unusually strong calcium line emissions months after explosion, fall within an intermediate luminosity range, are often found at large projected distances from their host galaxies, and may play a vital role in enriching galaxies and the intergalactic medium. Here we present multiwavelength observations of iPTF15eqv in NGC 3430, which exhibits a unique combination of properties that bridge those observed in Ca-rich transients and SNe Ib/c. iPTF15eqv has among the highest [Ca ii]/[O i] emission line ratios observed to date, yet is more luminous and decays more slowly than other Ca-rich transients. Optical and near-infrared photometry and spectroscopy reveal signatures consistent with the supernova explosion of a ≲10 M{sub ⊙} star that was stripped of its H-rich envelope via binary interaction. Distinct chemical abundances and ejecta kinematics suggest that the core collapse occurred through electron-capture processes. Deep limits on possible radio emission made with the Jansky Very Large Array imply a clean environment (n ≲ 0.1 cm{sup −3}) within a radius of ∼10{sup 17} cm. Chandra X-ray Observatory observations rule out alternative scenarios involving the tidal disruption of a white dwarf (WD) by a black hole, for masses >100 M {sub ⊙}. Our results challenge the notion that spectroscopically classified Ca-rich transients only originate from WD progenitor systems, complicate the view that they are all associated with large ejection velocities, and indicate that their chemical abundances may vary widely between events.

79 ASTRONOMY AND ASTROPHYSICS↗

Excited-State-Selective Ultrafast Relaxation Dynamics and Photoisomerization of trans-4,4'-Azopyridine

Here, excited-state dynamics of trans-4,4’-azopyridine in ethanol is studied using femtosecond transient absorption with 30 fs temporal resolution. Exciting the system at three different wavelengths, 460- and 290-(275) nm, to access the S 1 n,π* and S 2 π,π* electronic states, respectively, reveals a 195 cm -1 vibrational coherence, that suggests that the same mode is active in both n,π* and π,π* relaxation channels. Following S 1 -excitation, relaxation proceeds via a nonrotational pathway, where a fraction of the n,π* population is trapped in a planar minimum (lifetime, 2.1 ps), while the remaining population travels further to a second shallow minimum (lifetime, 300 fs) prior to decay into the ground state. Population of the S 2 state leads to 30-fs non-rotational relaxation with a concurrent buildup of n,π* population and nearly simultaneous formation of hot ground state species. An increase in the cis-isomer quantum yield upon π,π* vs. n,π* excitation is observed, which is opposite to trans-azobenzene.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electronic excitation energy transfer and nonstationary processes in KH{sub 2}PO{sub 4}:Tl crystals

We report the results of our experimental study and numerical simulation of the electronic excitation energy transfer to impurity centers under conditions where nonstationary processes take place in the hydrogen sublattice of potassium dihydrogen phosphate (KH{sub 2}PO{sub 4}) single crystals doped with mercury-like Tl{sup +} ions (KDP:Tl). We present the experimental results of our investigation of the decay kinetics of the transient optical absorption (100 ns–50 s) of intrinsic defects in the hydrogen sublattice of KDP:Tl obtained by pulsed absorption spectroscopy and the results of our study of the dynamics of the change in steady-state luminescence intensity with irradiation time (1–5000 s). To explain the transfer of the energy being released during electron recombination involving intrinsic KDP:Tl lattice defects, we formulate a mathematical model for the transfer of this energy to impurity Tl{sup +} luminescence centers. Within the model being developed, we present the systems of differential balance equations describing the nonstationary processes in the electron subsystem and the hydrogen sublattice; provide a technique for calculating the pair correlation functions Y(r, t) of dissimilar defects based on the solution of the Smoluchowski equation for the system of mobile hydrogen sublattice defects; calculate the time-dependent reaction rate constants K(t) for various experimental conditions; and outline the peculiarities and results of the model parametrization based on our experimental data. Based on our investigation, the dramatic and significant effect of a gradual inertial increase by a factor of 50–100 in steady-state luminescence intensity in the 4.5-eV band in KDP:Tl crystals due to the luminescence of mercury-like Tl{sup +} ions has been explained qualitatively and quantitatively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electrical and structural characterizations of crystallized Al{sub 2}O{sub 3}/GaN interfaces formed by in situ metalorganic chemical vapor deposition

Al{sub 2}O{sub 3} films were grown in situ by metalorganic chemical vapor deposition at 900 °C on GaN of both Ga- and N-face polarities. High-resolution transmission electron microscopy revealed that the Al{sub 2}O{sub 3} films were crystalline and primarily γ-phase. The Al{sub 2}O{sub 3}/Ga-GaN and Al{sub 2}O{sub 3}/N-GaN interfaces were both atomically sharp, and the latter further exhibited a biatomic step feature. The corresponding current-voltage (J-V) characteristics were measured on a metal-Al{sub 2}O{sub 3}-semiconductor capacitor (MOSCAP) structure. The leakage current was very high when the Al{sub 2}O{sub 3} thickness was comparable with the size of the crystalline defects, but was suppressed to the order of 1 × 10{sup −8} A/cm{sup 2} with larger Al{sub 2}O{sub 3} thicknesses. The interface states densities (D{sub it}) were measured on the same MOSCAPs by using combined ultraviolet (UV)-assisted capacitance-voltage (C-V), constant capacitance deep level transient spectroscopy (CC-DLTS), and constant capacitance deep level optical spectroscopy (CC-DLOS) techniques. The average D{sub it} measured by CC-DLTS and CC-DLOS were 6.6 × 10{sup 12} and 8.8 × 10{sup 12} cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3}/Ga-GaN and 8.6 × 10{sup 12} and 8.6 × 10{sup 12 }cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3}/N-GaN, respectively. The possible origins of the positive (negative) polarization compensation charges in Al{sub 2}O{sub 3}/Ga-GaN (Al{sub 2}O{sub 3}/N-GaN), including the filling of interface states and the existence of structure defects and impurities in the Al{sub 2}O{sub 3} layer, were discussed in accordance with the experimental results and relevant studies in the literature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗