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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,459 records · Page 81
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Optical lithography

Optical lithography is a photon-based technique comprised of projecting an image into a photosensitive emulsion (photoresist) coated onto a substrate such as a silicon wafer. It is the most widely used lithography process in the high volume manufacturing of nano-electronics by the semiconductor industry. Optical lithography’s ubiquitous use is a direct result of its highly parallel nature allowing vast amounts of information to be transferred very rapidly. For example, a modern leading edge lithography tool produces 150-300-mm patterned wafers per hour with 40-nm two-dimensional pattern resolution, yielding a pixel throughput of approximately 1.8T pixels/s. Continual advances in optical lithography capabilities have enabled the computing revolution over the past 50 years.

Naulleau, P↗
DOE OSTI2015

Electronic states and phonon properties of Ge{sub x}Si{sub 1−x} nanostructures

Ge{sub x}Si{sub 1−x} nanostructures that can be manipulated through size reduction, geometry variation, and alloying, are considered as one of the key developments for next generation technologies, due to their easy processing, unique properties, and compatibility with the existent silicon-based microelectronic industry. In this review, we have thoroughly discussed the major advances in electronic structures and phonon properties of Ge{sub x}Si{sub 1−x} nanocrystals (NCs). Experimental and theoretical characterization related to several main factors, for example, size, composition, strain, temperature, and interface and surface were presented with special emphasis in low-frequency Raman scattering. Current difficulties in explaining the Raman spectra are the assignment of the low-frequency modes because of the complexity of the environment around the NCs, thus different theoretical models are introduced in detail to deal with different properties of Ge{sub x}Si{sub 1−x} alloy NCs including Lamb’s theory, complex-frequency (CF) model, core–shell matrix (CMS) model and spatial coherence effect model. - Highlights: • Major advances in electronic structures and phonon properties of Ge{sub x}Si{sub 1−x} nanocrystals are discussed thoroughly. • Experimental and theoretical characterization related to size, composition, strain, temperature, and interface/surface are elucidated. • Low-frequency Raman spectra are specially described based on spatial coherence effect model.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Growth of carbon nanotube forests on flexible metal substrates: Advances, challenges, and applications

Owing to their remarkable properties and ordered architecture, vertically aligned CNT forests (VACNT) hold promises for countless applications ranging from energy storage to multifunctional fiber production. Over the last three decades, studies of carbon nanotube (CNT) growth have provided invaluable insight into the CNT nucleation and growth mechanism and enabled critical advancements in nanotechnology. Nevertheless, the ability to fully harness the exceptional VACNT properties in commercial devices is bottlenecked by compatibility of current CNT synthesis processes with large-scale manufacturing. Metal foil substrates present an economic alternative to traditional insulating substrates, like silicon or quartz, and are compatible with both roll-to-roll and automated, large-scale, batch processes. Compared to CNT growth on Si substrates, metal foils present additional challenges, such as increased roughness and reactivity at high temperatures. Nonetheless, many successful VACNT growths on conducting metal foils have been reported, which demonstrate the feasibility of metal substrate use for large-volume production of high-quality CNTs. Here, in this review, we discuss advancements in the field of VACNT growth on metal foil and specifically examine different choices for metal substrates, barrier and catalyst layers, deposition and growth methods, resulting CNT characteristics, and highlight a number of applications that benefit from CNT growth on metal substrates and transition to large-scale manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Chemical reactivity of CVC and CVD SiC with UO 2 at high temperatures

Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO 2 pellets and evaluated for their potential chemical reaction with UO 2 . While minor reactivity between chemical-vapor-composited (CVC) SiC and UO 2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO 2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi 2 , and U 3 Si 2 as a result of SiC reaction with UO 2 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Controlling Valley-Specific Light Emission from Monolayer MoS 2 with Achiral Dielectric Metasurfaces

Excitons in two-dimensional transition metal dichalcogenides have a valley degree of freedom that can be optically manipulated for quantum information processing. Here, we integrate MoS 2 monolayers with achiral silicon disk array metasurfaces to enhance and control valley-specific absorption and emission. Through the coupling to the metasurface electric and magnetic Mie modes, the intensity and lifetime of the emission of neutral excitons, trions, and defect bound excitons can be enhanced and shortened, respectively, while the spectral shape can be modified. Additionally, the degree of polarization (DOP) of exciton and trion emission from the valley can be symmetrically enhanced at 100 K. The DOP increase is attributed to both the metasurface-enhanced chiral absorption of light and the metasurface-enhanced exciton emission from the Purcell effect. Finally, combining Si-compatible photonic design with large-scale 2D materials integration, our work makes an important step toward on-chip valleytronic applications approaching room-temperature operation.

2D materials↗
DOE OSTI2023

Programmable photonic integrated meshes for modular generation of optical entanglement links

Abstract Large-scale generation of quantum entanglement between individually controllable qubits is at the core of quantum computing, communications, and sensing. Modular architectures of remotely-connected quantum technologies have been proposed for a variety of physical qubits, with demonstrations reported in atomic and all-photonic systems. However, an open challenge in these architectures lies in constructing high-speed and high-fidelity reconfigurable photonic networks for optically-heralded entanglement among target qubits. Here we introduce a programmable photonic integrated circuit (PIC), realized in a piezo-actuated silicon nitride (SiN)-in-oxide CMOS-compatible process, that implements an N × N Mach–Zehnder mesh (MZM) capable of high-speed execution of linear optical transformations. The visible-spectrum photonic integrated mesh is programmed to generate optical connectivity on up to N = 8 inputs for a range of optically-heralded entanglement protocols. In particular, we experimentally demonstrated optical connections between 16 independent pairwise mode couplings through the MZM, with optical transformation fidelities averaging 0.991 ± 0.0063. The PIC’s reconfigurable optical connectivity suffices for the production of 8-qubit resource states as building blocks of larger topological cluster states for quantum computing. Our programmable PIC platform enables the fast and scalable optical switching technology necessary for network-based quantum information processors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Ultrahigh thermal conductivity of isotopically enriched silicon

Most of the stable elements possess two and more stable isotopes. The physical properties of materials composed of such elements depend on the isotopic abundance to some extent. A remarkably robust isotope effect is observed in the phonon thermal conductivity, the principal mechanism of heat conduction in nonmetallic crystals. An isotopic disorder due to random distribution of the isotopes in the crystal lattice sites results in a rather strong phonon scattering and, consequently, in a reduction of thermal conductivity. In this paper, we present new results of accurate and precise measurements of thermal conductivity κ( T ) for silicon single crystals having three different isotopic compositions at temperatures T from 2.4 to 420 K. The highly enriched crystal containing 99.995% of 28 Si, which is one of the most perfect crystals ever synthesized, demonstrates a thermal conductivity of about 450 ± 10 W cm -1 K -1 at 24 K, the highest measured value among bulk dielectrics, which is ten times greater than the one for its counterpart nat Si with the natural isotopic constitution. For highly enriched crystal 28 Si and crystal nat Si, the measurements were performed for two orientations [001] and [011], a magnitude of the phonon focusing effect on thermal conductivity was determined accurately at low temperatures. The anisotropy of thermal conductivity disappears above 31 K. The influence of the boundary scattering on thermal conductivity persists sizable up to much higher temperatures (~80 K). The κ( T ) measured in this work gives the most accurate approximation of the intrinsic thermal conductivity of single crystal silicon which is determined solely by the anharmonic phonon processes and diffusive boundary scattering over a wide temperature range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

In situ TEM study of the transitions between crystalline Si and nonstoichiometric amorphous oxide under bipolar voltage bias

The electrical responses, either structurally or chemically, at the interface between a SiO 2 thin film and a single crystalline Si substrate are an important research subject in Si-based devices. Dielectric breakdown-induced epitaxial migration of Si into SiO 2 has been reported as a degradation mechanism in field effect transistors (FETs). Here, we show a direct observation of electric field induced conversion of single crystalline Si to nonstoichiometric amorphous oxide starting from the Si/native oxide interface using in situ transmission electron microscopy (TEM). We further show that nanocrystalline Si can form in the amorphous oxide under a voltage bias of reversed polarity. Electron energy loss spectroscopy and energy dispersive X-ray spectroscopy analyses indicate that the observed amorphization process was caused by the oxidation of Si and the recrystallization process was caused by the reduction of nonstoichiometric amorphous silicon oxide. Furthermore, both transitions are a result of field-driven directional migration of oxygen which originally comes from its native oxide layer.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Lithium-Ion Battery Technologies for Electric Vehicles: Progress and challenges

Electric Vehicle (EV) sales and adoption have seen a significant growth in recent years, thanks to advancements and cost reduction in lithium-ion battery technology, attractive performance of EVs, governments' incentives, and the push to reduce greenhouse gases and pollutants. In this article, we will explore the progress in lithium-ion batteries and their future potential in terms of energy density, life, safety, and extreme fast charge. Here we will also discuss material sourcing, supply chain, and end-of-life-cycle management as they have become important considerations in the ecosystem of batteries for the sustained growth and adoption of EVs. With significant government and private sector investments in research and development, processing, and manufacturing and advances in anodes (lithium and silicon), cathodes (high nickel), designs, supply chain development, and the circularity of lithium-ion batteries, lithium-based batteries are on track to make EVs mainstream, addressing climate concerns of fossil-fueled vehicles.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2018

Photon-mediated interactions between quantum emitters in a diamond nanocavity

Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally-resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically-mediated interactions. Such controlled interactions will be crucial in developing cavity-mediated quantum gates between spin qubits and for realizing scalable quantum network nodes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

High Altitude Electromagnetic Pulse Testing of Photovoltaic Modules

This report details the test setup, process, and results for radiated susceptibility testing of multicrystalline silicon photovoltaic (PV) modules as part of the EMP-Resilient Electric Grid Grand Challenge Laboratory Directed Research and Development (LDRD) project at Sandia National Laboratories. Testing was conducted over October 10-17, 2019, where 8 photovoltaic modules were exposed to E1 transient pulses with peak field levels up to 100 kV/m. Modules were terminated in a resistive load representing connected components. State of health testing conducted via I-V curve tracing of the photovoltaic modules showed no observable loss of device function due to large electric field transients. Differential mode currents were measured on the order of 10's of amps for up to a microsecond following the radiated field pulse. Common mode currents took the form of a damped sinusoid with a maximum peak of 10's to 100's of amps with a resonance near 60 MHz.

14 SOLAR ENERGY↗
DOE OSTI2020

Calculation of Glycolate Concentration Factors Across the 242-25H (3H) Evaporator System

Two models were developed to predict glycolate concentration factors across the 242-25H (3H) Evaporator system. The first model, identified as the Unrestricted Evaporation Model, was designed to evaluate concentration of typical 3H feed material to relatively high densities in order to calculate the concentration factor of glycolate in a given feed stream. This model may be used to understand the potential of glycolate to concentrate from a generic feed material through the 3H system. The second model, identified as the Holistic Evaporation Model, was designed to evaluate the evaporation of dilute, glycolate-containing Defense Waste Processing Facility (DWPF) waste with the requirement that high silicon concentrations typical of recycle material require dilution to adhere to current technical safety requirements. This model may be used to understand the potential of glycolate from DWPF recycle material to concentrate as a result of feeding through the 3H system.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

U.S. Solar Photovoltaic System and Energy Storage Cost Benchmark: Q1 2021 [Slides]

Our benchmarking method includes bottom-up accounting for all necessary system and projectdevelopment costs incurred when installing residential, commercial, and utility-scale systems, and it models the Q1 2021 costs for such systems, excluding any previous supply agreements or contracts. In general, we attempt to model the typical installation techniques and business operations from an installed-cost perspective, and our benchmarks are national averages. The residential PV-only benchmark and the commercial rooftop PV-only benchmark average costs by inverter type (string inverters, string inverters with direct current [DC] optimizers, and microinverters), weighted by inverter market share. The residential PV-only benchmark is further averaged across small installer and national integrator business models, weighted by market share. All benchmarks include variations—accounting for the differences in size, equipment, and operational use (particularly for storage)—that are currently available in the marketplace. All benchmarks assume nonunionized construction labor; residential and commercial PV systems predominantly use nonunionized labor, and the type of labor required for utility-scale PV systems depends heavily on the development process. All benchmarks assume the use of monofacial monocrystalline silicon PV modules. Benchmarks using cadmium telluride or bifacial modules could result in significantly different results. The data in this annual benchmark report inform the formulation of and track progress toward the U.S. Department of Energy (DOE) Solar Energy Technologies Office’s Government Performance and Reporting Act cost targets.

14 SOLAR ENERGY↗
NASA NTRS1972

Pyrometer for measurement of surface temperature distribution on a rotating turbine blade

A conceptual optical method and some test results are presented for measuring the surface temperature distribution on one of the rotating turbine blades with a surface resolution of 0.05 cm spot diameter at a tip speed of 400 m/sec. The blade is scanned line-by-line by a fixed optical system. During each line-scan, the detector analog output signal is converted to two hundred consecutive digital values that are temporarily stored in a high speed buffer memory, and then transferred at a slower rate to a computer for processing. The signal-to-noise ratio of the silicon avalanche detector is large enough to obtain an accuracy of one percent at 1050 K blade temperature. By averaging 25 scans of the same line the same accuracy can be obtained at 900 K.

Buchele, D. R.↗
NASA NTRS1973

Polyimide fiber-glass composite resists high temperatures

Composites synthesized from bismaleimide have superior strength and oxidation resistance at elevated temperatures when compared with similar composites prepared with epoxy or silicon polymers of similar cost. Polyimide synthesis technique and processing method yield essentially void-free fiber-glass reinforced composites.

Gilwee, W. J.↗
NASA NTRS1972

Pyrometer for measurement of surface temperature distribution on a rotating turbine blade.

A conceptual optical method and some test results are presented for measuring the surface temperature distribution on one of the rotating turbine blades with a surface resolution of 0.05 cm spot diameter at a tip speed of 400 m/sec. The blade is scanned line-by-line by a fixed optical system. During each line-scan, the detector analog output signal is converted to 200 consecutive digital values that are temporarily stored in a high-speed buffer memory and then transferred at a slower rate to a computer for processing. The signal-to-noise ratio of the silicon avalanche detector is large enough to obtain an accuracy of 1% at 1050 K blade temperature. By averaging 25 scans of the same line the same accuracy can be obtained at 900 K.

Buchele, D. R.↗