Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “out of memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,459 records · Page 81
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Performance of multi level error correction in binary holographic memory

At the Optical Computing Lab in the Jet Propulsion Laboratory (JPL) a binary holographic data storage system was designed and tested with methods of recording and retrieving the binary information. Levels of error correction were introduced to the system including pixel averaging, thresholding, and parity checks. Errors were artificially introduced into the binary holographic data storage system and were monitored as a function of the defect area fraction, which showed a strong influence on data integrity. Average area fractions exceeding one quarter of the bit area caused unrecoverable errors. Efficient use of the available data density was discussed. .

data storage↗
NASA NTRS2008

Carbon Nanotube Switches for Communication and Memory Applications

Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.

memory devices↗
NASA NTRS2013

Empirical Study of the Multiaxial, Thermomechanical Behavior of NiTiHf Shape Memory Alloys

An empirical study was conducted to characterize the multiaxial, thermomechanical responses of new high temperature NiTiHf alloys. The experimentation included loading thin walled tube Ni(sub 50.3)Ti(sub 29.7)Hf(sub 20) alloy samples along both proportional and nonproportional axial-torsion paths at different temperatures while measuring surface strains using stereo digital image correlation. A Ni(sub 50.3)Ti(sub 33.7)Hf(sub 16) alloy was also studied in tension and compression to document the effect of slightly depleting the Hf content on the constitutive responses of NiTiHf alloys. Samples of both alloys were made from nearly texture free polycrystalline material processed by hot extrusion. Analysis of the data shows that very small changes in composition significantly alter NiTiHf alloy properties, as the austenite finish (Af) temperature of the 16-at Hf alloy was found to be approximately 60 C less than the 20-at Hf alloy (approximately 120 C vs. 180 C). In addition, the 16-at Hf alloy exhibited smaller compressive transformation strains (2 vs. 2.5 percent). Multi-axial characterization of the 20-at % Hf alloy showed that while the random polycrystal transformation strains in tension (4 percent) and compression (2.5 percent) are modest in comparison with binary NiTi (6 percent, 4 percent), the torsion performance is superior (7 vs. 4 shear strain width to the pseudoelastic plateau).

tensile deformation↗
NASA NTRS2015

Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM

We investigated the heavy ion SEE characteristics of an EEPROM based on CBRAM technology. SEFI is the dominant type of SEE for each operating mode (standby, read-only, write/read). We also observed single bit upsets in the CBRAM cell, during write/read tests. the SEULET threshold is between 10 and 20 MeV * sq cm/mg, with an upper fluence limit of 3 × 10(exp 6) cm(exp -2) at 10 MeV * sq cm/mg. In the stand by mode, the CBRAM array appears immune to bit upsets.

single event effects↗
NASA NTRS2017

Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory

We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage mode. However, the single-level-cell (SLC) storage mode of the 3D NAND showed significantly reduced SEU susceptibility. Additionally, the 3D NAND showed less MBU susceptibility than the planar NAND, with reduced number of upset bits per byte and reduced cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the latest generation planar NAND, indicating a variable upset rate for a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

single-event upset (SEU)↗
NASA NTRS2017

Micron MT29F128G08AJAAA 128GB Asynchronous Flash Memory Total Ionizing Dose Characterization Test Report

The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for total dose response and to evaluate and compare lot date codes for sensitivity. In the test, the device was exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated to determine which lot is more robust.

Flash Memory↗
NASA NTRS2017

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory

We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode. The 3D NAND showed significantly reduced SEU susceptibility in single-level-cell (SLC) storage mode. Additionally, the 3D NAND showed less multiple-bit upset susceptibility than the planar NAND, with fewer number of upset bits per byte and smaller cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the Micron 16 nm planar NAND, which suggests that typical heavy ion test fluences will underestimate the upset rate during a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

3D NAND Flash memory; radiation susceptibility; si↗