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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,459 records · Page 81
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Fascinating physics at the edge of magnetic fusion devices

Abstract The physics of the processes at the edge of magnetic fusion devices is multifaceted and exhibits complex, nonlinear synergistic effects. Even though this region occupies only a small portion of the whole device, it plays a crucial role in overall plasma confinement, heat exhaust, and plasma–wall interactions. The latter affects not only the performance but also the lifetime of plasma-facing components and therefore remains an outstanding challenge for future fusion reactors. At the edge of fusion devices, researchers are dealing with phenomena including classical and anomalous plasma transport, atomic physics effects, and physics of plasma-facing material under strong irradiation by particle and energy fluxes. The diversity of edge physics makes it particularly attractive for young scientists. Working in this field, they can find endless possibilities to demonstrate their talents and creativity. This short review describes just some of the basic scrape-off layer and divertor plasma phenomena including divertor plasma detachment, intermittent bursts of anomalous cross-field plasma transport, plasma–material interactions, and dust in fusion plasmas, which are of particular interest in relation to fusion reactors.

Physics↗
DOE OSTI2018

Tunable surface acoustic wave device using semiconducting MgZnO and piezoelectric NiZnO dual-layer structure on glass

Tunable surface acoustic wave (SAW) devices have attracted considerable interests due to its applications in emerging fields, such as secured wireless communication, adaptive signal processing, and smart sensing systems. We report a dual-input-voltage-controlled tunable SAW built on glass, which uses a ZnO-based dual-layer structure consisting of a piezoelectric Ni- doped ZnO (NZO) and semiconducting Mg-doped ZnO (MZO). The interdigital (IDT) electrodes are buried in the piezoelectric NZO layer to form the delay line for SAW propagation, while the semiconductor MZO layer serves as the channel of a thin film transistor (TFT) to modulate the conductivity. Results show the interface between MZO channel and SiO 2 gate dielectric layer of the TFTT significantly impacts on SAW tuning performances due to Zn diffusion from MZO into SiO 2 . The TFT-SAW device using an ultra-thin MgO layer as interface modification enables SAW frequency tuning of 0.53% under solely V gs control with 0–12 V. The required voltage range is significantly reduced compared regular MZO-NZO TFT-SAW counterpart (Δf/f c ~ 0.25%; V gs –30 to –14 V) without interface modification. With additional control of V ds , the SAW frequency tunability is further expanded from 0.46% to 0.63%. As a result, this dual-input voltage-controlled frequency tuning device on glass is promising for low-voltage, low-cost portable smart sensors and voltage-controlled reconfigurable radio-frequency identification tags.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Multi-device analysis of energy loss duration and pellet penetration with implications for shattered pellet injection in ITER

A robust disruption mitigation system (DMS) requires accurate characterization of key disruption timescales, one of the most notable being the thermal quench (TQ). Recent modeling of shattered pellet injection (SPI) into ITER plasmas, using JOREK and INDEX, suggests long TQ durations (6–10 ms) and slow cold front propagation due to the large plasma size. If validated, these predictions would have an impact on the desired pellet parameters and mitigation strategies for the ITER DMS. To resolve these questions, a database of SPI experiments from several small-to-large sized devices (J-TEXT, KSTAR, AUG, DIII-D, and JET) has been compiled under the auspices of the International Tokamak Physics Activity MHD, disruptions, and control topical group. Analysis of the energy loss duration (proxy for the TQ duration) with machine size is presented for both mixed neon/deuterium (Ne/D) SPI and pure deuterium (D) SPI. Several metrics for the energy loss onset (e.g. soft x-ray signal drop, I p dip, and radiation flash) were considered as the conventional metric, electron cyclotron emission, is often cut-off during SPI. Several scalings with different onset metrics showed an increase in energy loss duration with machine size. The energy loss duration was additionally shown to be a function of the ratio between the number of SPI neon atoms injected and the stored energy. Analysis of the pellet shard position relative to the cold front found that in larger devices, pellets are typically found inboard of the q = 2 surface at the energy loss onset. Lastly, the delay between the pellet shards hitting the q = 2 surface and the energy loss onset was additionally found to increase with machine size. This suggests that the pellet shards in large devices will penetrate faster and further than the cooling front.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Abstract Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A novel two-layer-integrated microfluidic device for high-throughput yeast proteomic dynamics analysis at the single-cell level

Abstract Current microfluidic methods for studying multicell strains (e.g., m-types) with multienvironments (e.g., n-types) require large numbers of inlets/outlets (m*n), a complicated procedure or expensive machinery. Here, we developed a novel two-layer-integrated method to combine different PDMS microchannel layers with different functions into one chip by a PDMS through-hole array, which improved the design of a PDMS-based microfluidic system. Using this method, we succeeded in converting 2 × m × n inlets/outlets into m + n inlets/outlets and reduced the time cost of loading processing (from m × n to m) of the device for studying multicell strains (e.g., m-types) in varied multitemporal environments (i.e., n-types). Using this device, the dynamic behavior of the cell-stress-response proteins was studied when the glucose concentration decreased from 2% to a series of lower concentrations. Our device could also be widely used in high-throughput studies of various stress responses, and the new concept of a multilayer-integrated fabrication method could greatly improve the design of PDMS-based microfluidic systems.

Chen, Kaiyue↗
DOE OSTI2026

Coupling of Klein-Andreev resonant states in B⁢i 2 ⁢S⁢r 2 ⁢CaC⁢u 2 ⁢O 8+𝑥 -graphene-B⁢i 2⁢ S⁢r 2 ⁢CaC⁢u 2 ⁢O 8+𝑥 devices

Quantum devices require coherent coupling over macroscopic distances. Recently, resonances due to Klein tunneling and Andreev reflection states (KARS) have been observed in a naturally occurring p-n junction at the interface between B⁢i 2 ⁢S⁢r 2 ⁢CaC⁢u 2 ⁢O 8+𝑥 (BSCCO), a high−⁢𝑇 c superconductor (HTS), and graphene. The resonances appear as conductance oscillations with gating. Here, in this study, we show coupling between the KARS in BSCCO-graphene-BSCCO devices of varying separation (L). The coupling is evidenced by a power-law decay of resonance period as L increases from tens of nanometers to microns. These results demonstrate the long-distance coupling of KARS cavities in graphene-HTS junctions. The length dependence seen in experiments is supported by single-particle spectral functions which show KARS are coupled by transport modes in graphene. The strong coupling between KARS in BSCCO-graphene-BSCCO devices showcases the possibility of HTS-graphene junctions for quantum circuits and unconventional Josephson junctions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Dynamic attenuation scheme in measurement-device-independent quantum key distribution over turbulent channels

Measurement-device-independent quantum key distribution (MDI QKD) offers great security in practice because it removes all detector side channels. However, conducting MDI QKD over free-space channels is challenging. One of the largest culprits is the mismatched transmittance of the two independent turbulent channels causing a reduced Hong-Ou-Mandel visibility and thus a lower secret key rate. Here we introduce a dynamic attenuation scheme, where the transmittance of each of the two channels is monitored in real time by transmitting bright light pulses from each users to the measurement device. Based on the measured channel transmittance, a suitable amount of attenuation is introduced to the low-loss channel at the measurement device. Our simulation results show a significant improvement of QKD performance, especially when using short raw keys.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Quantifying Large Lattice Relaxations in Photovoltaic Devices

Temporal variations of Cu(In,Ga)Se 2 photovoltaic device properties during light exposure at various temperatures and voltage biases for times up to 100 h are analyzed using the kinetic theory of large lattice relaxations. Open-circuit voltage and p-type doping increased with charge injection and decreased with temperature at low injection conditions. Furthermore, lattice relaxation can account for both trends and activation energies extracted from the data are approximately 0.9 and 1.2 eV for devices with lower and higher sodium content, respectively. In these devices, increased sodium content resulted in higher initial p-type doping with greater stability. First-principles calculations providing revised activation energies for the (V Se -V Cu ) complex suggest that this defect does not account for the metastability observed here.

14 SOLAR ENERGY↗
DOE OSTI2023

Leakage Reduces Device Coherence Demands for Pulse-Level Molecular Simulations

Quantum simulation on noisy intermediate-scale quantum devices is severely limited by short qubit coherence times. A variational pulse-shaping algorithm known as ctrl-VQE was recently proposed to address this issue by eliminating the need for parameterized quantum circuits, which lead to long state preparation times. Here, in this study, we find the fastest possible pulses that prepare target molecular wave functions for a given device Hamiltonian describing coupled transmon qubits using simulations. We find that the resulting time-optimal pulses develop a bang-bang form consistent with Pontryagin’s maximum principle. We further investigate how the minimal state preparation time is impacted by the number of energy levels active in the transmon simulations. We find that leakage outside the computational subspace (something that is usually considered problematic) speeds up the state preparation, further reducing device coherence-time demands. Our analysis reveals that this speedup is due to both an enlarged solution space of target wave functions and the appearance of additional channels connecting initial and target states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Theory of Current Transients in Planar Semiconductor Devices: Insights and Applications to Organic Solar Cells

Time-domain current measurements are widely used to characterize semiconductor material properties, such as carrier mobility, doping concentration, carrier lifetime, and the static dielectric constant. It is therefore critical that these measurements be theoretically understood if they are to be successfully applied to assess the properties of materials and devices. In this paper, we derive generalized relations for describing current-density transients in planar semiconductor devices at uniform temperature. By spatially averaging the charge densities inside the semiconductor, we are able to provide a rigorous, straightforward, and experimentally relevant way to interpret these measurements. The formalism details several subtle aspects of current transients, including how the electrode charge relates to applied bias and internal space charge, how the displacement current can alter the apparent free-carrier current, and how to understand the integral of a charge-extraction transient. We also demonstrate how the formalism can be employed to derive the current transients arising from simple physical models, like those used to describe charge extraction by linearly increasing voltage (CELIV) and time-of-flight experiments. In doing so, we find that there is a nonintuitive factor-of-2 reduction in the apparent free-carrier concentration that can be easily missed, for example, in the application of charge-extraction models. Finally, to validate our theory and better understand the different current contributions, we perform a full time-domain drift-diffusion simulation of a CELIV trace and compare the results to our formalism. As expected, our analytic equations match precisely with the numerical solutions to the drift-diffusion, Poisson, and continuity equations. Furthermore, overall, our formalism provides a straightforward and general way to think about how the internal space-charge distribution, the electrode charge, and the externally applied bias translate into a measured current transient in a planar semiconductor device.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Direct Randomized Benchmarking for Multiqubit Devices

Benchmarking methods that can be adapted to multiqubit systems are essential for assessing the overall or “holistic” performance of nascent quantum processors. The current industry standard is Clifford randomized benchmarking (RB), which measures a single error rate that quantifies overall performance. But, scaling Clifford RB to many qubits is surprisingly hard. It has only been performed on one, two, and three qubits as of this writing. This reflects a fundamental inefficiency in Clifford RB: the n-qubit Clifford gates at its core have to be compiled into large circuits over the one- and two-qubit gates native to a device. As n grows, the quality of these Clifford gates quickly degrades, making Clifford RB impractical at relatively low n. In this Letter, we propose a direct RB protocol that mostly avoids compiling. Instead, it uses random circuits over the native gates in a device, which are seeded by an initial layer of Clifford-like randomization. We demonstrate this protocol experimentally on two to five qubits using the publicly available ibmqx5. We believe this to be the greatest number of qubits holistically benchmarked, and this was achieved on a freely available device without any special tuning up. Our protocol retains the simplicity and convenient properties of Clifford RB: it estimates an error rate from an exponential decay. But, it can be extended to processors with more qubits—we present simulations on 10+ qubits—and it reports a more directly informative and flexible error rate than the one reported by Clifford RB. Here, we show how to use this flexibility to measure separate error rates for distinct sets of gates, and we use this method to estimate the average error rate of a set of cnot gates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Infrared Light-Emitting Devices from Antenna-Coupled Luttinger Liquid Plasmons In Carbon Nanotubes

Electrically driven light-emitting devices provide highly energy-efficient lighting at visible wavelengths, and they have transformed photonic and electronic lighting applications. Efficient infrared light-emitting devices, however, have been challenging because band gap emission from semiconductors becomes inefficient in the mid-infrared to far-infrared spectral range. Here, in this paper, we investigate infrared light-emitting devices (IRLEDs) based on Luttinger liquid (LL) plasmons in one-dimensional (1D) metallic carbon nanotubes. Elementary excitations in LL are characterized by collective charge and spin excitations, i.e., plasmons and spinons. Consequently, electrons injected into the nanotubes transform efficiently into LL plasmons, a hybrid excitation of electromagnetic fields and electrons. We design nanoantennas coupled to the carbon nanotube to radiate LL plasmons into the far field. LL-based IRLEDs can be designed to selectively emit at wavelengths across the far- and mid-infrared spectra. An electrical-to-optical power conversion efficiency up to 3.2% may be achieved. Such efficient and narrowband LL-based IRLEDs can enable novel infrared nanophotonic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electronegative metal dopants improve switching variability in Al 2 ⁢O 3 resistive switching devices

Resistive random-access memories are promising for nonvolatile memory and brain-inspired computing applications. High variability and low yield of these devices are key drawbacks hindering reliable training of physical neural networks. In this paper, we show that doping an oxide electrolyte, Al 2 ⁢O 3 , with electronegative metals makes resistive switching significantly more reproducible, surpassing the reproducibility requirements for obtaining reliable hardware neuromorphic circuits. Based on density functional theory calculations, the underlying mechanism is hypothesized to be the ease of creating oxygen vacancies in the vicinity of electronegative dopants due to the capture of the associated electrons by dopant midgap states and the weakening of Al-O bonds. These oxygen vacancies and vacancy clusters also bind significantly to the dopant, thereby serving as preferential sites and building blocks in the formation of conducting paths. Throughout this work, we validate this theory experimentally by implanting different dopants over a range of electronegativities in devices made of multiple alternating layers of Al 2 ⁢O 3 and WN and find superior repeatability and yield with highly electronegative metals, Au, Pt, and Pd. These devices also exhibit a gradual SET transition, enabling multibit switching that is desirable for analog computing.

36 MATERIALS SCIENCE↗
DOE OSTI2019

A Simple Control to Reduce Device Over-Voltage Caused by Non-Active Switch Loop in Three-Level ANPC Converters

With the development of wide band-gap (WBG) technology, the switching speed of power semiconductor devices increases, which makes circuits more sensitive to parasitics. For three-level active neutral point clamped (3L-ANPC) converters, the over-voltage caused by additional non-active switch loop can be an issue. This paper analyzes the multiple commutation loops in 3L-ANPC converter and summarizes the impact factors of the device over-voltage. The nonlinearity of the output capacitance of the device can significantly influence the over-voltage. A simple control without introducing additional hardware circuit or complex software algorithm is proposed to attenuate the effect of the nonlinear output capacitance. Multi-pulse test is conducted for a 3L-ANPC converter built with silicon carbide (SiC) MOSFETs. With the proposed control, the testing results show that the peak drain-source voltage of both active and non-active switches is reduced by more than 20% compared to the conventional control.

Gui, Handong↗
DOE OSTI2019

Modeling of Multi-Loops Related Device Turn-On Overvoltage in 3L-ANPC Converters

An analytical model for the device drain-source turn-on overvoltage in three-level active neutral point clamped (3L-ANPC) converters is established in this paper. Considering the two commutation loops in the converter, the relationship between the turn-on overvoltage and the loop inductances is evaluated. The line switching frequency device usually exhibits higher overvoltage, while the high switching frequency device is not strongly influenced by the multiple loops. A 500 kVA 3L-ANPC converter using SiC MOSFETs is tested, and the model is verified with the experimental results.

Gui, Handong↗
DOE OSTI2019

Active Gate Current Control for Non-Insulating-Gate WBG Devices

This paper proposes an Active Gate Current Control (AGCC) strategy for non-insulating gate WBG devices, for example, gallium nitride gate-injection-transistor (GaN-GIT) and silicon carbide super junction transistor (SiC-SJT). It provides a tool for power converter designers to further improve the converter efficiency and to extend the life time of those higher cost power transistors. By continuously adjusting the device gate current, the proposed AGCC strategy can control the device switching speed, switching loss, conduction loss and gate loss together to achieve operation goals, including lower semiconductor loss, lower thermal stress, lower EMI spectrum, or smaller voltage overshoot across the full range

dv/dt↗
DOE OSTI2019

An Analog Active Gate Drive Circuit Architecture for Wide Band Gap Devices

With the increased usage of SiC and GaN devices in power converters, it is apparent to engineers that the benefits of these devices for low switching losses have to be balanced against two deterrents: (1) the faster rise and fall times of these devices lead to increased harmonic content, making it more difficult to meet Electromagnetic Compatibility (EMC) regulations; and (2) increased sensitivity to parasitic elements in the board layout, leading to higher dv DS /dt and di D /dt with higher current and voltage peak stresses. "Active" gate drives are thus needed to regulate different regions of switching to achieve the optimal tradeoff between switching loss and EMC. We present a simple analog circuit architecture for an active gate drive. Turn on and turn off tests with SiC modules and discrete parts are discussed with experimental results.

Ramabhadran, Ramanujam↗
DOE OSTI2025

Real-Time Lifetime Prediction of Semiconductor Devices Using Hardware-in-the-Loop

This paper presents a unique approach to enable real-time lifespan prediction of semiconductor power modules using a Hardware-in-the-Loop (HIL) system. By integrating the module's overall loss characteristics-specifically switching and conduction losses-with a thermoelectric model of the thermal management system, this research demonstrates that the model can dynamically estimates the junction temperature profile of the semiconductor devices in response to a changing torque demand profile for the motor drive system. This capability enables continuous monitoring of the module's operational time and cumulative stress induced on the devices to compute accumulated remaining lifetime or time-to-failure (TTF). This study provides an architectural framework for the HIL system with high-fidelity component models of multiple physical domains, allowing simulation of dynamic behaviors of a closely-coupled motor drive system. The advanced real-time computation and measurement functionalities of the HIL system allow for both dynamic lifetime calculations based on simulated data and aggregate lifetime predictions utilizing historical data. Moreover, this paper details an algorithm that not only computes cumulative damage but also synthesizes these data into a comprehensive aggregated lifetime metric. This methodology can enhance the maintenance scheduling strategies and operational reliability of semiconductor devices in critical applications, ultimately extending their service life while optimizing performance.

hardware-in-the-loop (HIL)↗