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At least 1,459 records · Page 81
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Understanding the Mechanism of Electronic Defect Suppression Enabled by Nonidealities in Atomic Layer Deposition

Silicon germanium (SiGe) is a multifunctional material considered for quantum computing, neuromorphic devices, and CMOS transistors. However, implementation of SiGe in nanoscale electronic devices necessitates suppression of surface states dominating the electronic properties. The absence of a stable and passive surface oxide for SiGe results in the formation of charge traps at the SiGe-oxide interface induced by GeOx. In an ideal ALD process in which oxide is grown layer by layer, the GeO x formation should be prevented with selective surface oxidation (i.e., formation of an SiO x interface) by controlling the oxidant dose in the first few ALD cycles of the oxide deposition on SiGe. However, in a real ALD process, the interface evolves during the entire ALD oxide deposition due to diffusion of reactant species through the gate oxide. In this work, this diffusion process in nonideal ALD is investigated and exploited: the diffusion through the oxide during ALD is utilized to passivate the interfacial defects by employing ozone as a secondary oxidant. Periodic ozone exposure during gate oxide ALD on SiGe is shown to reduce the integrated trap density (D it ) across the band gap by nearly 1 order of magnitude in Al 2 O 3 (<6 × 10 10 cm -2 ) and in HfO 2 (<3.9 × 10 11 cm -2 ) by forming a SiO x -rich interface on SiGe. Depletion of Ge from the interfacial layer (IL) by enhancement of volatile GeO x formation and consequent desorption from the SiGe with ozone insertion during the ALD growth process is confirmed by electron energy loss spectroscopy (STEM-EELS) and hypothesized to be the mechanism for reduction of the interfacial defects. In this work, the nanoscale mechanism for defect suppression at the SiGe-oxide interface is demonstrated, which is engineering of diffusion species in the ALD process due to facile diffusion of reactant species in nonideal ALD.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Ionization-induced annealing of pre-existing defects in silicon carbide

A long-standing objective in materials research is to find innovative ways to remove preexisting damage and heal fabrication defects or environmentally induced defects in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power, high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization processes results in a highly localized thermal spike that can effectively heal preexisting defects and restore the structural order. This work reveals an innovative self-healing process using highly ionizing ions, and it describes a critical aspect to be considered in modeling SiC performance as either a functional or a structural material for device applications or high-radiation environments.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Planar defect-driven electrocatalysis of CO 2 -to-C 2 H 4 conversion

The selectivity towards a specific C 2+ product, such as ethylene (C 2 H 4 ), is sensitive to the surface structure of copper (Cu) catalysts in carbon dioxide (CO 2 ) electro-reduction. The fundamental understanding of such sensitivity can guide the development of advanced electrocatalysts, although it remains challenging at the atomic level. In this work, we demonstrated that planar defects, such as stacking faults, could drive the electrocatalysis of CO 2 -to-C 2 H 4 conversion with higher selectivity and productivity than Cu(100) facets in the intermediate potential region (–0.50 ~ –0.65 V vs. RHE). The unique right bipyramidal Cu nanocrystals containing a combination of (100) facets and a set of parallel planar defects delivered 67% faradaic efficiency (FE) for C 2 H 4 and a partial current density of 217 mA cm –2 at –0.63 V vs. RHE. In contrast, Cu nanocubes with exclusive (100) facets exhibited only 46% FE for C 2 H 4 and a partial current density of 87 mA cm –2 at an identical potential. Both ex situ CO temperature-programmed desorption and in situ Raman spectroscopy analysis implied that the stronger *CO adsorption on planar defect sites facilitates CO generation kinetics, which contributes to a higher surface coverage of *CO and in turn an enhanced reaction rate of C–C coupling towards C 2+ products, especially C 2 H 4 .

36 MATERIALS SCIENCE↗
DOE OSTI2015

Analysis of an optimization-based atomistic-to-continuum coupling method for point defects

Here, we formulate and analyze an optimization-based Atomistic-to-Continuum (AtC) coupling method for problems with point defects. Application of a potential-based atomistic model near the defect core enables accurate simulation of the defect. Away from the core, where site energies become nearly independent of the lattice position, the method switches to a more efficient continuum model. The two models are merged by minimizing the mismatch of their states on an overlap region, subject to the atomistic and continuum force balance equations acting independently in their domains. We prove that the optimization problem is well-posed and establish error estimates.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2014

Identification of an isolated arsenic antisite defect in GaAsBi

Optically detected magnetic resonance and photoluminescence spectroscopy are employed to study grown-in defects in GaAs{sub 0.985}Bi{sub 0.015} epilayers grown by molecular beam epitaxy. The dominant paramagnetic defect is identified as an isolated arsenic antisite, As{sub Ga}, with an electron g-factor of 2.03 ± 0.01 and an isotropic hyperfine interaction constant A = (900 ± 20) × 10{sup −4} cm{sup −1}. The defect is found to be preferably incorporated during the growth at the lowest growth temperature of 270 °C, but its formation can be suppressed upon increasing growth temperature to 315 °C. The As{sub Ga} concentration is also reduced after post-growth rapid thermal annealing at 600 °C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Motional characteristics of positively charged muonium defects in In{sub 2}O{sub 3}

We report on a study of the motional characteristics of positively charged muonium defect centers in In{sub 2}O{sub 3} powder. Zero field muon spin relaxation (ZF-MuSR) measurements were taken from 2 K to 950 K. Results show the positively charged muonium defects occupying two states (Mu{sub 1} and Mu{sub 2}) at low temperatures while a third state (Mu{sub 3}) is introduced as the temperature is increased. Mu{sub 1} is occupied more heavily than Mu{sub 2} at low temperatures by a ratio of ∼8:1. The Mu1 state changes to the Mu{sub 2} state starting at 300 K with site change energy of 0.46±0.11 eV and is essentially not occupied above 500 K. The Mu2 state becomes diffusively mobile with a barrier of 0.78±0.07 eV at 350 K and begins trapping at Mu{sub 3} at 400 K with a capture energy of 0.56±0.019 eV. A metastable region is observed between 500 K and 650 K in which the ratio between Mu{sub 2} and Mu{sub 3} amplitudes and the hop rate of Mu{sub 2} are both roughly constant, implying a steady state trap and release balance between mobile Mu{sub 2} centers and the Mu{sub 3} trap state. Above 650 K, the muonium defects release from the Mu{sub 3} trap to the Mu{sub 2} diffusive state with a dissociation energy of 0.901±0.003 eV. The upper limit on the high temperature diffusion barrier is determined, from the Mu{sub 2} hop rate, to be 0.43±0.03 eV.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Quasi-continuum photoluminescence: Unusual broad spectral and temporal characteristics found in defective surfaces of silica and other materials

We previously reported a novel photoluminescence (PL) with a distribution of fast decay times in fused silica surface flaws that is correlated with damage propensity by high fluence lasers. The source of the PL was not attributable to any known silica point defect. Due to its broad spectral and temporal features, we here give this PL the name quasi-continuum PL (QC-PL) and describe the features of QC-PL in more detail. The primary features of QC-PL include broad excitation and emission spectra, a broad distribution of PL lifetimes from 20 ps to 5 ns, continuous shifts in PL lifetime distributions with respect to emission wavelength, and a propensity to photo-bleach and photo-brighten. We found similar PL characteristics in surface flaws of other optical materials, including CaF{sub 2}, DKDP, and quartz. Based on the commonality of the features in different optical materials and the proximity of QC-PL to surfaces, we suggest that these properties arise from interactions associated with high densities of defects, rather than a distribution over a large number of types of defects and is likely found in a wide variety of structures from nano-scale composites to bulk structures as well as in both broad and narrow band materials from dielectrics to semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Defect-mediated relaxation in the random tiling phase of a binary mixture: Birth, death and mobility of an atomic zipper

This paper describes the mechanism of defect-mediated relaxation in a dodecagonal square-triangle random tiling phase exhibited by a simulated binary mixture of soft discs in 2D. We examine the internal transitions within the elementary mobile defect (christened the “zipper”) that allow it to move, as well as the mechanisms by which the zipper is created and annihilated. The structural relaxation of the random tiling phase is quantified and we show that this relaxation is well described by a model based on the distribution of waiting times for each atom to be visited by the diffusing zipper. This system, representing one of the few instances where a well defined mobile defect is capable of structural relaxation, can provide a valuable test case for general theories of relaxation in complex and disordered materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Spin counting in electrically detected magnetic resonance via low-field defect state mixing

The work herein describes a method that allows one to measure paramagnetic defect densities in semiconductor and insulator based devices with electrically detected magnetic resonance (EDMR). The method is based upon the mixing of defect states which results from the dipolar coupling of paramagnetic sites at low magnetic fields. We demonstrate the measurement method with spin dependent tunneling in thin film dielectrics; however, the method should be equally applicable to paramagnetic defect density measurements in semiconductors via the more commonly utilized EDMR technique called spin dependent recombination.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ∼97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Phase-operation for conduction electron by atomic-scale scattering via single point-defect

In order to propose a phase-operation technique for conduction electrons in solid, we have investigated, using scanning tunneling microscopy, an atomic-scale electron-scattering phenomenon on a 2D subband state formed in Si. Particularly, we have noticed a single surface point-defect around which a standing-wave pattern created, and a dispersion of scattering phase-shifts by the defect-potential against electron-energy has been measured. The behavior is well-explained with appropriate scattering parameters: the potential height and radius. This result experimentally proves that the atomic-scale potential scattering via the point defect enables phase-operation for conduction electrons.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects or vacancies

Hexagonal boron nitride (hBN), a remarkable material with a two-dimensional atomic crystal structure, has the potential to fabricate heterostructures with unusual properties. We perform first-principles calculations to determine whether intercalated metal atoms and vacancies can mediate interfacial coupling and influence the structural and electronic properties of the graphene/hBN heterostructure. Metal impurity atoms (Li, K, Cr, Mn, Co, and Cu), acting as extrinsic defects between the graphene and hBN sheets, produce n-doped graphene. We also consider intrinsic vacancy defects and find that a boron monovacancy in hBN acts as a magnetic dopant for graphene, whereas a nitrogen monovacancy in hBN serves as a nonmagnetic dopant for graphene. In contrast, the smallest triangular vacancy defects in hBN are unlikely to result in significant changes in the electronic transport of graphene. Our findings reveal that a hBN layer with some vacancies or metal impurities enhances the interlayer coupling in the graphene/hBN heterostructure with respect to charge doping and electron scattering.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)

The formation of defects during the initial stages of native-oxide growth on the GaSb (001)-α(4 × 3) surface has been studied computationally using spin-unrestricted density functional theory. It is found that insertion into a Ga-Sb adatom dimer to form a peroxo Ga-O-O-Sb bridge is the most energetically favorable process with insertion into Ga-Sb back-bonds being somewhat less so. A Ga-O-O-Ga bridge between dimers is also favorable, but Sb-O-O-Sb bridges show little if any stability. In the course of analyzing molecular adsorption, a particularly reactive site has been identified that leads to O{sub 2} dissociation with little or no barrier. This process is initiated in the vicinity of an Sb-Sb dimer in the terminating layer and leads to sub-surface Ga and Sb defect sites (i.e., coordinatively unsaturated atoms) and to strained Ga-Sb bonds that may be susceptible to further O{sub 2} attack. However, the defects formed in these reactions do not produce states in the gap.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Thermal conductivity of layered borides: The effect of building defects on the thermal conductivity of TmAlB{sub 4} and the anisotropic thermal conductivity of AlB{sub 2}

Rare earth metal borides have attracted great interest due to their unusual properties, such as superconductivity and f-electron magnetism. A recent discovery attributes the tunability of magnetism in rare earth aluminoborides to the effect of so-called “building defects.” In this paper, we report data for the effect of building defects on the thermal conductivities of α-TmAlB{sub 4} single crystals. Building defects reduce the thermal conductivity of α-TmAlB{sub 4} by ≈30%. At room temperature, the thermal conductivity of AlB{sub 2} is nearly a factor of 5 higher than that of α-TmAlB{sub 4}. AlB{sub 2} single crystals are thermally anisotropic with the c-axis thermal conductivity nearly twice the thermal conductivity of the a-b plane. Temperature dependence of the thermal conductivity near and above room temperature reveals that both electrons and phonons contribute substantially to thermal transport in AlB{sub 2} with electrons being the dominant heat carriers.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High resolution measurements supported by electronic structure calculations of two naphthalene derivatives: [1,5]- and [1,6]-naphthyridine—Estimation of the zero point inertial defect for planar polycyclic aromatic compounds

Polycyclic aromatic hydrocarbons (PAHs) molecules are suspected to be present in the interstellar medium and to participate to the broad and unresolved emissions features, the so-called unidentified infrared bands. In the laboratory, very few studies report the rotationally resolved structure of such important class of molecules. In the present work, both experimental and theoretical approaches provide the first accurate determination of the rotational energy levels of two diazanaphthalene: [1,5]- and [1,6]-naphthyridine. [1,6]-naphthyridine has been studied at high resolution, in the microwave (MW) region using a Fourier transform microwave spectrometer and in the far-infrared (FIR) region using synchrotron-based Fourier transform spectroscopy. The very accurate set of ground state (GS) constants deduced from the analysis of the MW spectrum allowed the analysis of the most intense modes in the FIR (ν{sub 38}-GS centered at about 483 cm{sup −1} and ν{sub 34}-GS centered at about 842 cm{sup −1}). In contrast with [1,6]-naphthyridine, pure rotation spectroscopy of [1,5]-naphthyridine cannot be performed for symmetry reasons so the combined study of the two intense FIR modes (ν{sub 22}-GS centered at about 166 cm{sup −1} and ν{sub 18}-GS centered at about 818 cm{sup −1}) provided the GS and the excited states constants. Although the analysis of the very dense rotational patterns for such large molecules remains very challenging, relatively accurate anharmonic density functional theory calculations appeared as a highly relevant supporting tool to the analysis for both molecules. In addition, the good agreement between the experimental and calculated infrared spectrum shows that the present theoretical approach should provide useful data for the astrophysical models. Moreover, inertial defects calculated in the GS (Δ{sub GS}) of both molecules exhibit slightly negative values as previously observed for planar species of this molecular family. We adjusted the semi-empirical relations to estimate the zero-point inertial defect (Δ{sub 0}) of polycyclic aromatic molecules and confirmed the contribution of low frequency out-of-plane vibrational modes to the GS inertial defects of PAHs, which is indeed a key parameter to validate the analysis of such large molecules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states

The electronic and ionic transports in 32–56 nm thick anodic aluminum oxide films are investigated before and after a 1-h anneal at 200–400 °C in argon. Results are correlated to their defect density as measured by the Mott-Schottky technique. Solid state measurements show that electronic conduction upon annealing is hindered by an increase in the Schottky emission barrier, induced by a reduction in dopant density. Using an electrochemical contact, the films fail rapidly under cathodic polarization, unless defect density is decreased down to 10{sup 17} cm{sup −3}, resulting in a three order of magnitude reduction in current and no visible gas evolution. Under anodic polarization, the decrease in defect density delays the onset of ionic conduction as well as further oxide growth and failure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of Z{sub 1/2}, EH{sub 5}, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 μm thick n-type 4H-SiC epitaxial layers containing Z{sub 1/2}, EH{sub 5}, and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z{sub 1/2} defects was found to be 1.7 × 10{sup 13} cm{sup −3}. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., energy resolution and charge collection efficiency, the junction properties like uniformity in barrier-height, leakage current, and effective doping concentration, and the presence of defects has been discussed in details. The studies also revealed that the dominating contribution to the charge collection efficiency was due to the diffusion of charge carriers generated in the neutral region of the detector. The 10 mm{sup 2} large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Modeling intrinsic defects in LiNbO{sub 3} within the Slater-Janak transition state model

Intrinsic point defects in LiNbO{sub 3}, i.e., isolated Nb antisites and Li as well Nb vacancies, are investigated from first-principles within the Slater-Janak transition state model. Thereby the electronic structure of the investigated defects is calculated with hybrid exchange-correlation functionals. This approach allows for the calculation of charge transition levels without comparing the total energies of differently charged supercells. The obtained results are in agreement with previous hybrid density-functional theory calculations based on total-energy differences. Li and Nb vacancies can be formed in the V{sub Li}{sup −} and V{sub Nb}{sup 5−} charge states only, as long as the host is not strongly p-type or n-type, respectively. Nb{sub Li} antisites may capture one or two electrons, forming the defect states often referred to as small bound polaron and bi-polaron.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗