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Results for “biasing”
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Divertor ‘death-ray’ explained: An artifact of a Langmuir probe operating at negative bias in a high-recycling divertor
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Molecular statics calculations of the biases and point defect capture volumes of small cavities
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Atomic modeling assessment of the interaction distance and effective bias for small defect clusters absorption at a void in BCC Fe
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Fairness and social bias quantification in Large Language Models for sentiment analysis
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Machine learning detection of Majorana zero modes from zero-bias peak measurements
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Genomic and proteomic biases inform metabolic engineering strategies for anaerobic fungi
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RNA polymerase II-driven CRISPR-Cas9 system for efficient non-growth-biased metabolic engineering of Kluyveromyces marxianus
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Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias
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Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs
This paper evaluates the impact of the fast high gate-voltage screening technique on gate oxide reliability of commercial 1.2 kV 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) with planar and trench gate structures. The measurements are conducted on packaged devices with the intent that the results will be applicable to wafer-level screening. The threshold voltage (V th ) of SiC MOSFETs is measured before and after various screening treatments and recovery process. In addition, constant-voltage time-dependent dielectric breakdown (TDDB) measurements are performed on SiC MOSFETs to obtain the intrinsic lifetime of gate oxide. The objective of this study is to determine the optimal screening conditions and improve screening efficiency without degradation of gate oxide reliability, such as V th shift and reduced oxide intrinsic lifetime. Due to the differences in the gate oxidation process and structural design of SiC planar and trench MOSFETs, the two types of devices exhibit different oxide reliability in the screening process. The recommended screening conditions obtained in this paper reveal that SiC trench MOSFETs can accept higher screening voltages compared to SiC planar MOSFETs. Hence, it can be concluded that more efficient screening techniques can be adopted for SiC MOSFETs with thicker gate oxide to meet the requirements of industrial applications.
Effect of irradiation and annealing performed with bias voltage applied across the coupling capacitors on the interstrip resistance of ATLAS ITk silicon strip sensors
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The evidence of bound solitons delocalization in o-TaS3 under dc bias from sum rule
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Kinematic bias on centrality selection of jet events in pPb collisions at the LHC
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Stochastic bias from loops of massive particles during inflation
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Ionic conductivity of bias sputtered lithium phosphorus oxy-nitride thin films
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Vaccination of pigs with a codon-pair bias de-optimized live attenuated influenza vaccine protects from homologous challenge
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