SEARCH · Engineering Papers
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We report laser beam focusing by a flat, homogeneous film with a thickness of less than 100 nm. The effect relies on refractive index changes occurring in vanadium dioxide as it undergoes a phase transition from insulator to metal. Phase front curvature is achieved by means of temperature gradients, and adjustable focal lengths from infinity to 30 cm are attained.
Ta-layer thickness (t{sub Ta}) dependence of the measured DC voltage V from the inverse-spin Hall effect (ISHE) in Ta/CoFeB bilayer structure is experimentally investigated using the ferromagnetic resonance in the TE{sub 011} resonant cavity. The ISHE signals excluding the spin-rectified effect (SRE) were separated from the fitted curve of V against t{sub Ta}. For t{sub Ta} ≈ λ{sub Ta} (Ta-spin diffusion length = 2.7 nm), the deviation in ISHE voltage V{sub ISH} between the experimental and theoretical values is significantly increased because of the large SRE contribution, which also results in a large deviation in the spin Hall angle θ{sub SH} (from 10% to 40%). However, when t{sub Ta} ≫ λ{sub Ta}, the V{sub ISH} values are consistent with theoretical values because the SRE terms become negligible, which subsequently improves the accuracy of the obtained θ{sub SH} within 4% deviation. The results will provide an outline for an accurate estimation of the θ{sub SH} for materials with small λ value, which would be useful for utilizing the spin Hall effect in a 3-terminal spintronic devices in which magnetization can be controlled by in-plane current.
We report the relation between current induced effective fields and ferromagnetic layer thickness. Hall measurements with rotating magnetic field show that the transverse and perpendicular effective fields have linear relations to the inverse of the magnetic moment m per area S. The results imply that both of these effective fields may originate from spin angular momentum transferring. However, the non-zero intercept of the transverse field at m/S = 0 implies that magnetization independent effects, such as Rashba effect, may contribute to transverse field.
For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer. Thus, the TMR ratio peaked at t{sub Fe} = 0.4 nm: i.e., 120% at 29 Ωμm{sup 2}.
The electrical properties of two-dimensional atomic sheets exhibit remarkable dependences on layer thickness and surface chemistry. Here, we investigated the variation of the work function properties of MoS{sub 2} films prepared with chemical vapor deposition (CVD) on SiO{sub 2} substrates with the number of film layers. Wafer-scale CVD MoS{sub 2} films with 2, 4, and 12 layers were fabricated on SiO{sub 2}, and their properties were evaluated by using Raman and photoluminescence spectroscopies. In accordance with our X-ray photoelectron spectroscopy results, our Kelvin probe force microscopy investigation found that the surface potential of the MoS{sub 2} films increases by ∼0.15 eV when the number of layers is increased from 2 to 12. Photoemission spectroscopy (PES) with in-situ annealing under ultra high vacuum conditions was used to directly demonstrate that this work function shift is associated with the screening effects of oxygen or water molecules adsorbed on the film surface. After annealing, it was found with PES that the surface potential decreases by ∼0.2 eV upon the removal of the adsorbed layers, which confirms that adsorbed species have a role in the variation in the work function.
Nominal stoichiometric Na{sub x}Co{sub 2}O{sub 4} (x = 1.0, 1.2, 1.4, 1.6, 1.8, and 2.0) polycrystals were synthesized by a solid-state reaction method. They were further pressed into pellets by the spark plasma sintering. The crystal structure and morphology of Na{sub x}Co{sub 2}O{sub 4} samples were characterized by X-ray diffraction and scanning electron microscopy measurements. Good crystallinity and layered structures were observed for all the samples. Positron annihilation measurements were performed for Na{sub x}Co{sub 2}O{sub 4} as a function of Na content. Two lifetime components are resolved. τ{sub 1} is attributed mainly to positron annihilation in the O-Co-O layers and shifts to Na layers only in the H3 phase. The second lifetime τ{sub 2} is due to positron annihilation in vacancy clusters which may exist in the Na layers or grain boundary region. The size of vacancy clusters grow larger but their concentration decreases with increasing Na content in the range of 1.0 < x < 1.8. The thickness of O-Co-O layer also shows continuous increase with increasing Na content, which is reflected by the increase of τ{sub 1}. The thermal conductivity κ, on the other hand, shows systematic decrease with increasing Na content. This suggests that the increasing spacing of O-Co-O layer could effectively reduce the thermal conductivity of Na{sub x}Co{sub 2}O{sub 4}.
The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (d{sub s} = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger d{sub s} due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with d{sub s} = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing d{sub s} due to the competing effects of decreased compressive strain and weak electronic coupling of stacked QD layers. The QD structure with d{sub s} = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.
Ultrasound signals have been used extensively for non-destructive evaluation (NDE). However, typical reconstruction techniques, such as the synthetic aperture focusing technique (SAFT), are limited to quasi-homogenous thin media. New ultrasonic systems and reconstruction algorithms are in need for one-sided NDE of non-homogenous thick objects. An application example space is imaging of reinforced concrete structures for commercial nuclear power plants (NPPs). These structures provide important foundation, support, shielding, and containment functions. Identification and management of aging and degradation of concrete structures is fundamental to the proposed long-term operation of NPPs. Another example is geothermal and oil/gas production wells. These multi-layered structures are composed of steel, cement, and several types of soil and rocks. Ultrasound systems with greater penetration range and image quality will allow for better monitoring of the well's health and prediction of high-pressure hydraulic fracturing of the rock. These application challenges need to be addressed with an integrated imaging approach, where the application, hardware, and reconstruction software are highly integrated and optimized. Therefore, we are developing an ultrasonic system with Model-Based Iterative Reconstruction (MBIR) as the image reconstruction backbone. As the first implementation of MBIR for ultrasonic signals, this paper document the first implementation of the algorithm and show reconstruction results for synthetically generated data.
We have fabricated Si-on-insulator (SOI) layers with a thickness h{sub 1} of a few nanometers and examined them by Raman spectroscopy with 363.8 nm excitation. We have found that phonon and electron confinement play important roles in SOI with h{sub 1} < 10 nm. We have confirmed that the first-order longitudinal optical phonon Raman band displays size-induced major homogeneous broadening due to phonon lifetime reduction as well as minor inhomogeneous broadening due to wave vector relaxation (WVR), both kinds of broadening being independent of temperature. Due to WVR, transverse acoustic (TA) phonons become Raman-active and give rise to a broad band in the range of 100–200 cm{sup −1}. Another broad band appeared at 200–400 cm{sup −1} in the spectrum of SOI is attributed to the superposition of 1st order Raman scattering on longitudinal acoustic phonons and 2nd order scattering on TA phonons. Suppression of resonance-assisted 2-nd order Raman bands in SOI spectra is explained by the electron-confinement-induced direct band gap enlargement compared to bulk Si, which is confirmed by SOI reflection spectra.
We investigate the photovoltaic performance of pseudomorphic In{sub 0.1}Ga{sub 0.9}N/GaN multiple-quantum well (MQW) solar cells as a function of the total active region thickness. An increase in the number of wells from 5 to 40 improves the short-circuit current and the open-circuit voltage, resulting in a 10-fold enhancement of the overall conversion efficiency. Further increasing the number of wells leads to carrier collection losses due to an incomplete depletion of the active region. Capacitance-voltage measurements point to a hole diffusion length of 48 nm in the MQW region.
In this paper, growth mechanisms of ZnO nanostructures on non-seeded glass, 6 nm and 12 nm Au seed layer obtained by mist-atomization was proposed. ZnO films were successfully deposited on glass substrate with different thickness of Au seed layer i.e. 6 nm and 12 nm. The surface and optical properties of the prepared samples were investigated using Field emission scanning electron microscopy (FESEM) and photoluminescence (PL). FESEM micrograph show that ZnO nanostructure deposited on 6 nm Au seed layer has uniform formation and well distributed. From PL spectroscopy, the UV emission shows that ZnO deposited on 6 nm Au seed layer has the more intense UV intensity which proved that high crystal quality of nanostructured ZnO deposited on 6 nm Au seed layer.
Due to the importance of the two-phase flow researches for the industrial safety analysis, many researchers developed various methods and techniques to study the two-phase flow phenomena on the industrial cases, such as in the chemical, petroleum and nuclear industries cases. One of the developing methods and techniques is image processing technique. This technique is widely used in the two-phase flow researches due to the non-intrusive capability to process a lot of visualization data which are contain many complexities. Moreover, this technique allows to capture direct-visual information data of the flow which are difficult to be captured by other methods and techniques. The main objective of this paper is to present an improved algorithm of image processing technique from the preceding algorithm for the stratified flow cases. The present algorithm can measure the film thickness (h{sub L}) of stratified flow as well as the geometrical properties of the interfacial waves with lower processing time and random-access memory (RAM) usage than the preceding algorithm. Also, the measurement results are aimed to develop a high quality database of stratified flow which is scanty. In the present work, the measurement results had a satisfactory agreement with the previous works.
A thin Al{sub 2}O{sub 3} interlayer deposited between La{sub 2}O{sub 3} layer and Si substrate was used to scavenge the interfacial layer (IL) by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident IL reduction corroborated by the transmission electron microscopy results suggested the feasibility of this method in IL scavenging. Significant improvements in oxygen vacancy and leakage current characteristics were achieved as the thickness of Al{sub 2}O{sub 3} interlayer increase. Meanwhile, some disadvantages such as the degradations in interface trap and oxide trapped charge characteristics were also observed.
Gamma backscattering experiments were performed on metal foils varying some geometric parameters of the assembly. A collimated beam from a {sup 22}Na source impinges on aluminum sheets of dimensions 33.3×20.4×1.0 cm{sup 3} and iron sheets of (33.2×20.4×0.2) cm{sup 3}. The backscattered photons are detected by a 3″×3″ CsI scintillator detector placed at 90° to the incident beam. The experimental results show that thickness of metalic samples can be determined with a very small uncertainty.
Because of novel features in their structural, electronic, magnetic and optical properties, especially potential applications in nanoelectronics, the few-layer graphene intercalation compounds (FLGICs) have been intensively studied recently. In this work, the dielectric constant of the doped graphene of stage-1 FeCl{sub 3}-GIC is obtained by fitting the optical contrast spectra. And fully intercalated stage-1 FeCl{sub 3}-FLGICs were prepared by micromechanical cleavage method from graphite intercalation compounds (GICs) for the first time. Finally, we demonstrated that the thickness of stage-1 FeCl{sub 3}-GICs by micromechanical cleavage can be determined by optical contrast spectra. This method also can be used to other FLGICs, such as SbCl{sub 5}-FLGICs and AuCl{sub 5}-FLGICs, etc.
We present high resolution laser spectroscopy of Cs vapours confined in a unique optical cell of sub-micrometric and micrometric thickness, where a strong spatial anisotropy is present for the time of interaction between the atoms and laser radiation. Similarly to the spectra of selective specular reflection, the Doppler-free spectra of absorption and fluorescence are observed, not revealing cross-over resonances that will be useful for frequency stabilisation, provided the cell is cheap and compact. A new resonance in the fluorescence of closed transition is studied, demonstrating its high sensitivity to elastic atom – atom and atom – dielectric surface collisions. The theoretical modelling performed is in agreement with the experimental observations. (laser spectroscopy)
We propose a method for measuring simultaneously the refractive index n{sub f}, extinction coefficient m{sub f} and thickness H{sub f} of thin films. The method is based on the resonant excitation of waveguide modes in the film by a TE- or a TM-polarised laser beam in the geometry of frustrated total internal reflection. The values of n{sub f}, m{sub f} and H{sub f} are found by minimising the functional φ = [N{sup -1}Σ{sup N}{sub i=1}(R{sub exp}(θ{sub i}) – R{sub thr}(θ{sub i})){sup 2}]{sup 1/2}, where R{sub exp}(θ{sub i}) and R{sub thr}(θ{sub i}) are the experimental and theoretical coefficients of reflection of the light beam from the interface between the measuring prism and the film at an angle of incidence θ{sub i}. The errors in determining n{sub f}, m{sub f} and H{sub f} by this method are ±2 × 10{sup -4}, ±1 × 10{sup -3} and ±0.5%, respectively. (fiber and integrated optics)
Here, we prove a theorem relating the variance of path length estimators for single-collision Monte Carlo source iteration to a parameter that becomes infinitesimally small in an important physical regime arising in radiative transfer. In our usage, “single-collision Monte Carlo source iteration” refers to Monte Carlo Boltzmann transport methods in which each Monte Carlo particle history includes no more than a single collision, and the physics of multiple scattering is modeled by lagging the scattering source term and iterating until this term converges. Our theorem can be used to construct variance reduction techniques which improve the order of the estimator variance. This enables calculations that would otherwise require impractically large sample sizes to achieve practical estimator uncertainties. We believe this is the first postulation of a theorem relating estimator variance to a limiting case parameter for single-collision Monte Carlo source iteration, and the first proof of such a theorem. We illustrate the theorem’s value with an example in which the authors of a transport method used the theorem to design a variance reduction technique that improved the uncertainty of their solution by a factor of about 500 for a proxy problem from radiative transfer that contains both optically-thick and optically-thin material.