Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SWITCHING CIRCUIT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,459 records · Page 81
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Materials Selection Principles for Designing Electro‐Thermal Neurons

Artificial neurons exhibiting volatile threshold switching and action potential‐like oscillations are crucial for brain‐inspired computing. While Complimentary Metal‐Oxide‐Semiconductor (CMOS)‐based strategies require hundreds of transistors to simulate each neuron, neuronal oscillations arise spontaneously in individual electro‐thermal devices due to nonlinearities like the Mott transition in VO 2 . Despite improved understanding of the physics, quantitative connections between neuronal performance and material properties remain under‐explored, preventing predictive neuron design and rational materials selection. In this work, a physics‐aware forward design methodology is developed for interrogating a wide palette of materials with properties varying by orders of magnitude, and their performance (high frequency, high dynamical reconfigurability and low power) under external circuit and device geometry constraints is assessed. The space of viable materials is identified to be much larger than previously recognized, with candidates from a range of materials classes, including Ge, GaP and MoS 2 . CMOS‐compatible performance (such as 100 GHz oscillating frequencies) can be achieved with CMOS‐compatible node sizes (≈10 nm). Finally, combinations of material properties yielding desired neuronal performance under uncertain design constraints are considered. This work solidifies forward design principles for electro‐thermal neuron devices, a necessary pre‐condition for inverse design from desired neuronal performance to required materials properties.

compact model↗
NASA NTRS2008

Disabling CNT Electronic Devices by Use of Electron Beams

Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide) deposits a significant amount of energy in a small volume, the energy density may suffice to thermally induce structural and/or electronic changes that disable the CNT. Research may be warranted to investigate this effect in detail.

Petkov, Mihail↗
DOE OSTI2024

Design considerations of series type hybrid circuit breaker (S‐HCB)

Abstract The series‐type direct current (DC) hybrid circuit breaker (S‐HCB) concept was previously reported to offer better performance than solid‐state circuit breakers (SSCB) and hybrid circuit breakers (HCB). S‐HCB offers low conduction power loss like an HCB and ‐scale interruption time, which is even faster than an SSCB. It uses a pulse transformer to isolate the lower‐voltage high‐inductance power electronic circuit from the high‐voltage, low‐inductance main power loop. This paper provides analysis of the impact of the S‐HCB circuit components on the overall system performance and a scalable S‐HCB design guide for different DC system voltage and current ratings. In addition, system energy flow analysis is performed in the time domain to provide an understanding of how energy is delivered, dissipated, and released throughout the entire fault interruption process. The S‐HCB prototype was experimentally tested at 3 kV/30 A and 6 kV/150A with the results showing the interruption of the low fault current of 30 A and the high fault current of 150 A within 8 and maintaining the fault current at a near zero value for 300 to enable an arcless opening of a series mechanical switch. The key design challenges of S‐HCB at high voltage and high current ratings were discussed and possible solutions to mitigate those challenges were introduced.

Alashi, Mahmoud↗
DOE OSTI2018

Accelerated Architectures Create Programming Opportunities

In the early 2000s, industry switched to multicore microprocessors to address semiconductors' speed and power limits. However, the change was unsuccessful, leading to dire claims that “Moore's law is ending.” In conclusion, this column suggests that while the approach was sound, it needed a deeper architectural transformation. Industry has since discovered a suitable architecture, but work remains on software to support it.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Low loss fiber-coupled volumetric interconnects fabricated via direct laser writing

Photonic integrated circuits (PICs) are vital for high-speed data transmission. However, optical routing is limited in PICs composed of only one or a few stacked planes. Further, coupling losses must be low in deployed systems. Previously, we developed the subsurface controllable refractive index via beam exposure (SCRIBE) technique to write accurate 3D gradient refractive index (GRIN) profiles within a mesoporous silica scaffold. Here, we apply SCRIBE to fabricate low loss, broadband, polarization insensitive, fiber-coupled, single-mode volumetric interconnects that include waveguides traversing arbitrary 3D paths. By seamlessly integrating mode-matching subsurface lenses and GRIN waveguide tapers, calibrating for positional writing errors, implementing multipass exposure, automating alignment, and switching to antireflection coated fibers, we reduced the insertion loss for a fiber-PIC-fiber interconnect from 50 to 2.14 dB, or 1.47 dB, excluding the fiber array’s loss. Further, we establish an upper bound of 0.45 dB loss per coupler. We report quality factors of 27,000 and 77,000 and bending losses of 6 and 3 dB/cm for 15 and 30 µm radii microrings, respectively. We also demonstrate Bézier escalators, polarization-rotating and polarization-splitting interconnects, and a seven-channel 25 µm pitch volumetric interconnect. The SCRIBE platform presents a clear path toward realizing 3D PICs with unique functionality.

Optics↗
DOE OSTI2026

A Generic and Multifunctional Electromagnetic Transient Model for Grid-Following Inverters

This article presents a generic and multi-functional electromagnetic transient (EMT) dynamic model of grid following (GFL) inverter-based resource (IBR) using the PSCAD software platform. The features of the developed model includes the flexibility in selecting various types and combinations of DC sources covering PV modules, battery modules, ideal DC source module, as well as flexibility in selecting either switched or averaged model of inverter. This model also covers exhaustive lists of controller logic covering open-loop/closed-loop PQ dispatch control, DC voltage and AC terminal voltage control along with the conventional current control designed in dq-domain, ate- domain and positive-negative sequence domain. Moreover, this model is equipped with the flexibility in selecting various types of current limiting schemes that includes saturation-based as well as latching-based current limiter, anti-windup protection. Moreover, the EMT model is agnostic to the MVA rating and is suitable for interfacing transmission systems by being complaint with the IEEE Std. 2800. The generality in the power circuits and the multi-functional options in operation and control of the developed EMT model makes it suitable for both academia and industry to study various power system aspects not limited to but such as fault behavior of GFL IBR and impacts on protection system, transient stability of a system interfaced with large number of GFL IBRs etc.

14 SOLAR ENERGY↗
NASA NTRS1998

Silicon Carbide Mixers Demonstrated to Improve the Interference Immunity of Radio-Based Aircraft Avionics

Concern over the interference of stray radiofrequency (RF) emissions with key aircraft avionics is evident during takeoff and landing of every commercial flight when the flight attendant requests that all portable electronics be switched off. The operation of key radio-based avionics (such as glide-slope and localizer approach instruments) depends on the ability of front-end RF receivers to detect and amplify desired information signals while rejecting interference from undesired RF sources both inside and outside the aircraft. Incidents where key navigation and approach avionics malfunction because of RF interference clearly represent an increasing threat to flight safety as the radio spectrum becomes more crowded. In an initial feasibility experiment, the U.S. Army Research Laboratory and the NASA Lewis Research Center recently demonstrated the strategic use of silicon carbide (SiC) semiconductor components to significantly reduce the susceptibility of an RF receiver circuit to undesired RF interference. A pair of silicon carbide mixer diodes successfully reduced RF interference (intermodulation distortion) in a prototype receiver circuit by a factor of 10 (20 dB) in comparison to a pair of commercial silicon-based mixer diodes.

Neudeck, Philip G.↗
DOE OSTI2024

A Generic and Multi-Functional Electromagnetic Transient Model for Grid-Following Inverter: Preprint

This article presents a generic and multi-functional electromagnetic transient (EMT) dynamic model of grid following (GFL) inverter-based resource (IBR) using the PSCAD TM software platform. The features of the developed model includes the flexibility in selecting various types and combinations of DC sources covering PV modules, battery modules, ideal DC source module, as well as flexibility in selecting either switched or averaged model of inverter. This model also covers exhaustive lists of controller logic covering open-loop/closed-loop PQ dispatch control, DC voltage and AC terminal voltage control along with the conventional current control designed in dq-domain, aB- domain and positive-negative sequence domain. Moreover, this model is equipped with the flexibility in selecting various types of current limiting schemes that includes saturation-based as well as latching-based current limiter, anti-windup protection. Moreover, the EMT model is agnostic to the MVA rating and is suitable for interfacing transmission systems by being complaint with the IEEE Std. 2800. The generality in the power circuits and the multi-functional options in operation and control of the developed EMT model makes it suitable for both academia and industry to study various power system aspects not limited to but such as fault behavior of GFL IBR and impacts on protection system, transient stability of a system interfaced with large number of GFL IBRs etc.

grid following inverter↗
DOE OSTI2025

Aluminum Boron Nitride Ferroelectric Field-Effect Transistors With ZnO Semiconductor Channel

The discovery of ferroelectricity in hafnium zirconium oxide (HfxZr 1−x O2) and related fluorite materials has spurred interest in ferroelectric devices suitable for integration with silicon integrated circuits (ICs), especially those that can be embedded in the back-end-of-line (BEOL) process. More recently, ferroelectricity has been found in wurtzite aluminum nitride-based materials, such as scandium and boron-doped aluminum nitride (Al 1−x ScxN and Al 1−x BxN). Although these materials currently have undesirably large coercive electric fields, and small breakdown electric field-to-coercive electric field ratio, their low processing temperatures and large remanent polarization offer intriguing possibilities for device applications. Furthermore, we report ferroelectric field-effect transistors (FeFETs) with a 15 nm thick Al0.88B0.12N layer and an 11 nm ZnO semiconductor channel, achieving a memory window >1 V and switching voltages ( V switch ) <±10 V.

42 ENGINEERING↗
DOE OSTI2014

Current-induced electrical self-oscillations across out-of-plane threshold switches based on VO{sub 2} layers integrated in crossbars geometry

Electrically activated metal-insulator transition (MIT) in vanadium dioxide (VO{sub 2}) is widely studied from both fundamental and practical points of view. It can give valuable insights on the currently controversial phase transition mechanism in this material and, at the same time, allows the development of original MIT-based electronic devices. Electrically triggered insulator-metal transitions are demonstrated in novel out-of-plane, metal-oxide-metal type devices integrating a VO{sub 2} thin film, upon applying moderate threshold voltages. It is shown that the current-voltage characteristics of such devices present clear negative differential resistance effects supporting the onset of continuous, current-driven phase oscillations across the vanadium dioxide material. The frequencies of these self-sustained oscillations are ranging from 90 to 300 kHz and they may be tuned by adjusting the injected current. A phenomenological model of the device and its command circuit is developed, and allows to extract the analytical expressions of the oscillation frequencies and to simulate the electrical oscillatory phenomena developed across the VO{sub 2} material. Such out-of-plane devices may further contribute to the general understanding of the driving mechanism in metal-insulator transition materials and devices, a prerequisite to promising applications in high speed/high frequency networks of oscillatory or resistive memories circuits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Drebrin-mediated microtubule–actomyosin coupling steers cerebellar granule neuron nucleokinesis and migration pathway selection

Neuronal migration from a germinal zone to a final laminar position is essential for the morphogenesis of neuronal circuits. While it is hypothesized that microtubule–actomyosin crosstalk is required for a neuron’s ‘two-stroke’ nucleokinesis cycle, the molecular mechanisms controlling such crosstalk are not defined. By using the drebrin microtubule–actin crosslinking protein as an entry point into the cerebellar granule neuron system in combination with super-resolution microscopy, we investigate how these cytoskeletal systems interface during migration. Lattice light-sheet and structured illumination microscopy reveal a proximal leading process nanoscale architecture wherein f-actin and drebrin intervene between microtubules and the plasma membrane. Functional perturbations of drebrin demonstrate that proximal leading process microtubule–actomyosin coupling steers the direction of centrosome and somal migration, as well as the switch from tangential to radial migration. Finally, the Siah2 E3 ubiquitin ligase antagonizes drebrin function, suggesting a model for control of the microtubule–actomyosin interfaces during neuronal differentiation.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1983

Integral inverter/battery charger for use in electric vehicles

The design and test results of a thyristor based inverter/charger are discussed. A battery charger is included integral to the inverter by using a subset of the inverter power circuit components. The resulting charger provides electrical isolation between the vehicle propulsion battery and ac line and is capable of charging a 25 kWh propulsion battery in 8 hours from a 220 volt ac line. The integral charger employs the inverter commutation components at a resonant ac/dc isolated converter rated at 3.6 kW. Charger efficiency and power factor at an output power of 3.6 kW are 86% and 95% respectively. The inverter, when operated with a matching polyphase ac induction motor and nominal 132 volt propulsion battery, can provide a peak shaft power of 34 kW (45 ph) during motoring operation and 45 kW (60 hp) during regeneration. Thyristors are employed for the inverter power switching devices and are arranged in an input-commutated topology. This configuration requires only two thyristors to commutate the six main inverter thyristors. Inverter efficiency during motoring operation at motor shaft speeds above 450 rad/sec (4300 rpm) is 92-94% for output power levels above 11 KW (15 hp). The combined ac inverter/charger package weighs 47 kg (103 lbs).

Thimmesch, D.↗
NASA NTRS1977

Bubble domain circuit organization

An on-chip bubble domain circuit organization. One or more storage registers are connected to a propagation path whereby data in the form of magnetic bubble domains (bubbles) may be transferred into and out of the storage registers. The propagation path includes a generator for producing the initial bubbles which are expanded into any desired number of new bubbles by a unique multiple output replicator. A unique input decoder is utilized to determine to which storage register the bubbles from the replicator will be directed along the propagation path. Those bubbles not selected may be annihilated. An output decoder utilizing essentially the same decoding scheme as the input decoder, selectively receives bubbles from the storage register. A transfer and replicate switch is utilized between the storage register and output decoder to selectively transfer bubbles to the output decoder. The output decoder may collapse all of the bubbles from certain storage registers so that only the information from the selected storage register reaches the detector. The detectors in turn produce the chip output signal. External control electronics are utilized to control the selective operation of the various devices utilized in the propagation path.

Chen, Thomas T.↗
DOE OSTI2014

Giant switchable photovoltaic effect in organometal trihalide perovskite devices

Organolead trihalide perovskite (OTP) materials are emerging as naturally abundant materials for low-cost, solution-processed and highly efficient solar cells. Here, we show that, in OTP-based photovoltaic devices with vertical and lateral cell configurations, the photocurrent direction can be switched repeatedly by applying a small electric field of <1 V μm –1 . The switchable photocurrent, generally observed in devices based on ferroelectric materials, reached 20.1 mA cm –2 under one sun illumination in OTP devices with a vertical architecture, which is four orders of magnitude larger than that measured in other ferroelectric photovoltaic devices. This field-switchable photovoltaic effect can be explained by the formation of reversible p–i–n structures induced by ion drift in the perovskite layer. Furthermore, the demonstration of switchable OTP photovoltaics and electric-field-manipulated doping paves the way for innovative solar cell designs and for the exploitation of OTP materials in electrically and optically readable memristors and circuits.

14 SOLAR ENERGY↗
DOE OSTI2022

Protection and Restoration Solutions to Reliable and Resilient Integration of Grid-connected PV Installations and Distributed Energy Resources: Design, Testbed, Proof of Work and Impact Studies (Final Report)

To gain a better understanding of the complex transients in a utility grid with a large number of solar PV installations coupled by PWM inverters during the protection and restoration period of the power grid, in this project a kW-level experimental system with dominating inverter-based resources and a hardware-in-loop simulation system with transmission and distribution models, as well as several SEL protective relays have been built and used. The major research findings of the project are summarized below in two perspectives: Experimental research: A self-organized ultra-high frequency solitary waveform is discovered and demonstrated in the hardware experimental system. Despite the familiarities, such a solitary waveform is distinct from any harmonics, transient, or resonance waves in that, it is 1) non-dispersive over time and space, 2) not associated with any active source or the linear superposition of sources, 3) half-cycle asymmetric, 4) not responding to filters or change of system characteristic resonance frequency, 5) ubiquitous as it occurs simultaneously everywhere in the system from DC supply, power lines, and the utility grid, and 6) explosive through tripping the protection or damaging susceptible devices or circuits. Analytical study: The nature of such a new waveform and an analytical explanation of its formation are studied based on related physics and non-linear science principles, with the following highlights: 1) such a new waveform follows the solutions to the Non-linear Schrödinger equation, so the classic linear perturbation theory is unable to explain or predict such a unique waveform as confirmed with the research team of RTDS; 2) the critical condition of occurrence of such a waveform is derived, which indicates that the breakings of solitary wave is a system synchronous issue between the utility grid in the 60Hz phasor domain and duty-ratio modulation of DC sources in the inverter switching frequency domain; 3) such a waveform carries energy mass so it could be detrimental; 4) such a waveform is deceiving as it is not readily detectable in the energy propagation direction by the primary protection equipment, while it is detrimental in the perpendicular direction of energy propagation, i.e. voltage direction. Thus, it has more likely challenges to the second primary equipment and devices, particularly at the weakest link and point such as aging insulation and inappropriate setting of susceptible devices. Therefore, such a waveform can be easily ignored in the aftermath investigation. The intellectual merits: The experimental discovery reveals certain unfamiliar transient phenomena that could challenge the integration of large-scale grid-connected solar PV installation during the group ride-through period of solar PV installations, commissioning of large-solar farms, or dramatic change of solar radiation conditions. Particularly, the research findings suggest that the occurrence of the unfamiliar transient phenomena is uniquely associated with the inverter-based solar PV installation, which is less likely to happen for rotary energy systems. The physics and non-linear science-based research work laid down an analytical path to the challenging transient stability problems including those that have been observed currently and future calls. Both experimental and analytical research results explain the limitation of many current research effects including some DoE research undertakings as well as possible solutions. The broader impacts: The research outcome of the project advances the understanding of the possible transient problems for the integration of inverter-based solar PV installation. It also highlights the theoretical and technical barriers for applying the conventional theory and technology to design and implement countermeasures against their adverse impacts of the large-scale solar PV installation and operation on grid reliability and security. More broadly, the research outcomes have shed some light on the open, fundamental challenges in the integration of large-scale solar photovoltaic energy into current and next-generation power grids across the country, and worldwide. The advanced physics and non-linear science-based analysis open up a path to harmonization of the renewables for societal energy needs via building a resilient and sustainable electric power infrastructure.

14 SOLAR ENERGY↗
NASA NTRS1976

Digital coding of Shuttle TV

Space Shuttle will be using a field-sequential color television system for the first few missions, but the present plans are to switch to a NTSC color TV system for future missions. The field-sequential color TV system uses a modified black and white camera, producing a TV signal with a digital bandwidth of about 60 Mbps. This article discusses the characteristics of the Shuttle TV systems and proposes a bandwidth-compression technique for the field-sequential color TV system that could operate at 13 Mbps to produce a high-fidelity signal. The proposed bandwidth-compression technique is based on a two-dimensional DPCM system that utilizes temporal, spectral, and spatial correlation inherent in the field-sequential color TV imagery. The proposed system requires about 60 watts and less than 200 integrated circuits.

Habibi, A.↗
NASA NTRS1989

Space physics analysis network node directory (The Yellow Pages): Fourth edition

The Space Physics Analysis Network (SPAN) is a component of the global DECnet Internet, which has over 17,000 host computers. The growth of SPAN from its implementation in 1981 to its present size of well over 2,500 registered SPAN host computers, has created a need for users to acquire timely information about the network through a central source. The SPAN Network Information Center (SPAN-NIC) an online facility managed by the National Space Science Data Center (NSSDC) was developed to meet this need for SPAN-wide information. The remote node descriptive information in this document is not currently contained in the SPAN-NIC database, but will be incorporated in the near future. Access to this information is also available to non-DECnet users over a variety of networks such as Telenet, the NASA Packet Switched System (NPSS), and the TCP/IP Internet. This publication serves as the Yellow Pages for SPAN node information. The document also provides key information concerning other computer networks connected to SPAN, nodes associated with each SPAN routing center, science discipline nodes, contacts for primary SPAN nodes, and SPAN reference information. A section on DECnet Internetworking discusses SPAN connections with other wide-area DECnet networks (many with thousands of nodes each). Another section lists node names and their disciplines, countries, and institutions in the SPAN Network Information Center Online Data Base System. All remote sites connected to US-SPAN and European-SPAN (E-SPAN) are indexed. Also provided is information on the SPAN tail circuits, i.e., those remote nodes connected directly to a SPAN routing center, which is the local point of contact for resolving SPAN-related problems. Reference material is included for those who wish to know more about SPAN. Because of the rapid growth of SPAN, the SPAN Yellow Pages is reissued periodically.

Peters, David J.↗
NASA NTRS2009

Efficient Multiplexer FPGA Block Structures Based on G4FETs

Generic structures have been conceived for multiplexer blocks to be implemented in field-programmable gate arrays (FPGAs) based on four-gate field-effect transistors (G(sup 4)FETs). This concept is a contribution to the continuing development of digital logic circuits based on G4FETs and serves as a further demonstration that logic circuits based on G(sup 4)FETs could be more efficient (in the sense that they could contain fewer transistors), relative to functionally equivalent logic circuits based on conventional transistors. Results in this line of development at earlier stages were summarized in two previous NASA Tech Briefs articles: "G(sup 4)FETs as Universal and Programmable Logic Gates" (NPO-41698), Vol. 31, No. 7 (July 2007), page 44, and "Efficient G4FET-Based Logic Circuits" (NPO-44407), Vol. 32, No. 1 ( January 2008), page 38 . As described in the first-mentioned previous article, a G4FET can be made to function as a three-input NOT-majority gate, which has been shown to be a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer components than are required for conventional transistor-based circuits performing the same logic functions. The second-mentioned previous article reported results of a comparative study of NOT-majority-gate (G(sup 4)FET)-based logic-circuit designs and equivalent NOR- and NAND-gate-based designs utilizing conventional transistors. [NOT gates (inverters) were also included, as needed, in both the G(sup 4)FET- and the NOR- and NAND-based designs.] In most of the cases studied, fewer logic gates (and, hence, fewer transistors), were required in the G(sup 4)FET-based designs. There are two popular categories of FPGA block structures or architectures: one based on multiplexers, the other based on lookup tables. In standard multiplexer- based architectures, the basic building block is a tree-like configuration of multiplexers, with possibly a few additional logic gates such as ANDs or ORs. Interconnections are realized by means of programmable switches that may connect the input terminals of a block to output terminals of other blocks, may bridge together some of the inputs, or may connect some of the input terminals to signal sources representing constant logical levels 0 or 1. The left part of the figure depicts a four-to-one G(sup 4)FET-based multiplexer tree; the right part of the figure depicts a functionally equivalent four-to-one multiplexer based on conventional transistors. The G(sup 4)FET version would contains 54 transistors; the conventional version contains 70 transistors.

Vatan, Farrokh↗