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At least 1,459 records · Page 81

Optical parametric oscillator of mid-IR, visible and UV ranges with synchronous pumping by a Q-switched mode-locked Nd : YAG laser

The parametric generation in a nonlinear PPLN crystal synchronously pumped by a Q-switched mode-locked Nd : YAG laser with a pulse duration of 45 ps is studied. The output pump intensity in the nonlinear crystal reaches ∼10 GW cm{sup -2}. At a pulse repetition rate of 1 kHz, the average output power at the idler wavelength (∼3.6 μm) is ∼12 mW, the peak power is ∼25 kW, and the conversion efficiency (with respect to the absorbed power) is ∼10%. The radiation linewidth at the signal wavelength (∼1.5 μm) is 13 cm{sup -1}. Along with the signal and idler waves, the output emission spectrum contains lines at wavelengths of 822, 754, 624, 532, 463, 442, 392 and 355 nm. The tunable radiation with wavelengths in the vicinity of 392, 463 and 822 nm is observed for the first time. The tuning ranges for the new lines are measured (5 – 10 nm) and their origin is explained. (nonlinear optical phenomena)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Simulation of an intracavity Q -switched optical parametric oscillator using rate equations

Based on rate equations we have refined the model of an intracavity Q -switched optical parametric oscillator (IOPO) by taking into account the influence of self-Raman stimulated scattering. The rate equations are solved and analysed in the plane-wave approximation for a Gaussian spatial beam distribution profile under various conditions. The spatial rate equations are also solved numerically for a beam with a field distribution of the TEM{sub 00} mode. The numerical analysis shows that stimulated self-Raman scattering leads to a decrease in the output signal power and an increase in the signal pulse width. This model allows one to predict that the output signal power can be increased with increasing ratio of Raman to fundamental photon lifetimes. This suggests a practical method for determining the self-Raman gain coefficient experimentally. In addition, a multi-pulse process for the signal beam of the IOPO can be regenerated by the presented model. However, in comparison with the previous research, the presented model is more accurate and allows one to design and optimise single-resonator IOPOs.The bibliography includes 25 references. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Efficient operation of a room-temperature Fe{sup 2+}:ZnSe laser pumped by a passively Q -switched Er:YAG laser

Efficient generation of a train of laser pulses is obtained at room temperature in a Fe{sup 2+}: ZnSe polycrystal pumped by a passively Q -switched Er:YAG laser. The Fe{sup 2+}:ZnSe laser energy reaches 130 mJ at a slope efficiency with respect to the absorbed pump power of 47%. The average pulse repetition rate in the train is ∼100 kHz. (lasers)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Compact Q-switched Yb : Er laser with a pulse repetition rate of 10 Hz

A compact acousto-optically Q-switched Yb : Er laser emitting 20-ns pulses at λ = 1.5 μm with an energy of 8 mJ and a repetition rate of 10 Hz is developed. The laser radiation divergence at the exit of an optical forming system is 1 mrad. The experimental sample can stably operate in a wide temperature range with unchanged output parameters. The developed laser is 110 × 30 × 30 mm in size taking into account the dimensions of the optical forming system. Life tests demonstrated stable continuous operation of the sample for 50000 pulses. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Generation of double giant pulses in actively Q-switched lasers

Generation of a second giant pulse in a longitudinal mode neighbouring to the longitudinal mode possessing minimal losses is theoretically and experimentally studied in actively Q-switched lasers. A mathematical model is suggested for explaining the giant pulse generation in a laser with multiple longitudinal modes. The model makes allowance for not only a standing, but also a running wave for each cavity mode. Results of numerical simulation and data of experiments with a Nd : YLF laser explain the effect of second giant pulse generation in a neighbouring longitudinal mode. After a giant pulse in the mode with minimal losses is generated, the threshold for the neighbouring longitudinal mode is still exceeded due to the effect of burning holes in the population inversion spatial distribution. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Generation of controllable Ince – Gaussian modes in a passively Q-switched microchip laser under truncated decentred Gaussian beam pumping

We report a passively Q-switched (PQS) Nd : YAG/Cr{sup 4+}: YAG microchip laser pumped by a truncated decentred Gaussian beam for controllable Ince – Gaussian (IG) mode generation. IG{sup e}(n, n) modes (n = 0, …, 4) are obtained experimentally by choosing the appropriate truncation parameter, which is defined as a ratio of the radius of the aperture to the beam waist. The IG{sup e}(4, 4) mode is produced in the PQS Nd : YAG/Cr{sup 4+}: YAG microchip laser under decentred Gaussian beam pumping at a pump power of 2.6 W, the mode selection being achieved by reducing the truncation parameter. The threshold pump powers for different IG{sup e}(n, n) modes are theoretically calculated to illustrate the mode selection process. The pulsed IG{sup e}(n, n) (n ≥ 1) mode generation with a peak power exceeding 1 kW and a nanosecond pulse width is obtained in the PQS microchip laser, which is a potential laser source for forming flexible vortex arrays for optical tweezers. (control of laser radiation parameters)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Crystal structure of bacterial cytochrome bc 1 in complex with azoxystrobin reveals a conformational switch of the Rieske iron–sulfur protein subunit

Cytochrome bc 1 complexes (cyt bc 1 ), also known as complex III in mitochondria, are components of the cellular respiratory chain and of the photosynthetic apparatus of non-oxygenic photosynthetic bacteria. They catalyze electron transfer (ET) from ubiquinol to cytochrome c and concomitantly translocate protons across the membrane, contributing to the cross-membrane potential essential for a myriad of cellular activities. This ET-coupled proton translocation reaction requires a gating mechanism that ensures bifurcated electron flow. In this study, we report the observation of the Rieske iron–sulfur protein (ISP) in a mobile state, as revealed by the crystal structure of cyt bc 1 from the photosynthetic bacterium Rhodobacter sphaeroides in complex with the fungicide azoxystrobin. Unlike cyt bc 1 inhibitors stigmatellin and famoxadone that immobilize the ISP, azoxystrobin causes the ISP-ED to separate from the cyt b subunit and to remain in a mobile state. Analysis of anomalous scattering signals from the iron–sulfur cluster of the ISP suggests the existence of a trajectory for electron delivery. This work supports and solidifies the hypothesis that the bimodal conformation switch of the ISP provides a gating mechanism for bifurcated ET, which is essential to the Q-cycle mechanism of cyt bc 1 function.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Structural Analysis of Induction Machine and Switched Reluctance Machine

Presented is a comprehensive analysis of structural performance of Induction Machine (IM) and Switched Reluctance Machine (SRM) rotors under different operational conditions. Electric machines are susceptible to forces of diverse origins. In addition to traditionally considered magnetic and centrifugal forces, this article discusses independent and inclusive effects of thermal expansion and shaft attachment techniques on structural integrity of the machines. A comparative analysis of structural performance of IMs and SRMs has also been performed, under a range of scenarios, to facilitate application specific machine selection from a structural perspective.

42 ENGINEERING↗

Nanosecond rf-Power Switch for Gyrotron-Driven Millimeter-Wave Accelerators

The development of alternative mm-wave high-gradient, >200 MV/m, accelerating structures offers a promising path to reduce the cost and footprint of future TeV-scale linear colliders, as well as linacs for industrial, medical, and security applications. The major factor limiting accelerating gradient is vacuum rf breakdown. The probability of such breakdowns increases with pulse length. For reliable operation, millimeter-wave structures require nanoseconds-long pulses at the megawatt level. This power is available from gyrotrons, which have a minimum pulse length on the order of microseconds. To create shorter pulses and to reliably detect rf breakdowns, we developed the following devices: a laser-based rf switch capable of selecting 10 ns long pulses out of the microseconds long gyrotron pulses, thus enabling the use of the gyrotrons as power sources for mm-wave high-gradient linacs, and a shot-to-shot sub-THz spectrometer with high-frequency resolution, capable of detecting pulse shortening due to rf breakdowns. We will describe the principle of operation of these devices and their achieved parameters. Here, we also report on the experimental demonstration of these devices with the high-power gyrotron at the Massachusetts Institute of Technology. In the experiments, we demonstrate nanosecond rf power modulation, shot-to-shot measurements of the pulse spectra, and detection of rf breakdowns.

43 PARTICLE ACCELERATORS↗

Topological quantum switch and controllable one-dimensional conducting paths in antimonene facilitated by breaking the inversion symmetry

Based on the nontrivial topology of buckled antimonene, we propose two conceptual device designs based on breaking the inversion symmetry which can be achieved by gating. The first one is a quantized topological switch obtained by breaking the degeneracy of the fractionalized charge conducting edge states, inducing a metal-insulator transition. In the second one, using local gating with different polarity in different areas, a domain wall is created at their interface, which hosts a soliton type electronic gap state in which transport could be accessed by doping and shown to be robust over a wide range of disorder.

36 MATERIALS SCIENCE↗

Structures of the NLRP14 pyrin domain reveal a conformational switch mechanism regulating its molecular interactions

Pyrin domains (PYDs) recruit downstream effector molecules in NLR signalling. A specific charge-relay system suggests a the formation of a signalling complex involving a PYD dimer. The cytosolic tripartite NLR receptors serve as important signalling platforms in innate immunity. While the C-terminal domains act as sensor and activation modules, the N-terminal death-like domain, e.g. the CARD or pyrin domain, is thought to recruit downstream effector molecules by homotypic interactions. Such homotypic complexes have been determined for all members of the death-domain superfamily except for pyrin domains. Here, crystal structures of human NLRP14 pyrin-domain variants are reported. The wild-type protein as well as the clinical D86V mutant reveal an unexpected rearrangement of the C-terminal helix α6, resulting in an extended α5/6 stem-helix. This reordering mediates a novel symmetric pyrin-domain dimerization mode. The conformational switching is controlled by a charge-relay system with a drastic impact on protein stability. How the identified charge relay allows classification of NLRP receptors with respect to distinct recruitment mechanisms is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A Two-Step Control Approach for Torque Ripple and Vibration Reduction in Switched Reluctance Motor Drives

The objective of this work is to reduce the torque ripple and vibration in Switched Reluctance Motor (SRM) drives. To achieve such a goal, a two-step approach is proposed. In the first step, the reference current is profiled using an optimization method, aimed to reduce the torque pulsation. In the second, the optimum current profile is applied to the SRM through an adaptive hysteresis band controller to actively cancel the radial vibration. The proposed technique uses an optimization procedure based on the Field Reconstruction Method (FRM) and Non-Derivative Optimization Method to find the optimal current profile that mitigates the torque pulsation, however, the investigation has shown that the proposed excitation leads to a higher radial vibration, which has been mitigated by using an adaptive hysteresis band controller. The theoretical basis for the proposed approach is initially presented, followed by system modeling and simulation. In addition, experimental verification has been conducted using an 8/6 SRM to show the feasibility of the proposed approach. The proposed method alleviates the acoustic noise and torque pulsation in SRM and offers an effective step towards the prevalent use of SRM in a wide range of applications.

42 ENGINEERING↗

Load Shed Recovery With Transmission Switching and Intentional Islanding Methods After (N-2) Line Contingencies

Changing power system configuration may result in load shed recovery (LSR) because topology change can provide power flow control in meshed network. Some topologies may favor generation redispatch as compared to others and can eliminate line congestion which leads to LSR. One of the known methods for topology change is called transmission switching (TS) and research conducted in the past showed that TS is an effective means of mitigating load shedding. Another method of topology control is intentional islanding (IIS). In this manuscript, we explore IIS as a potential solution for LSR. IIS based on generator coherency has been presented in literature for mitigating cascading failures. However, IIS has not been explored solely as a LSR mechanism. In this paper, we compare the LSR based on IIS with well known LSR algorithm based on TS. The comparison is performed for IEEE 39-bus system and IEEE 118- bus system. The results show that IIS has a potential to perform better than TS in terms of computational efficiency and LSR.

42 ENGINEERING↗

Genetic Algorithm-Based Commutation Angle Control for Torque Ripple Mitigation in Switched Reluctance Motor Drives

This work addresses the application of the Genetic Algorithm (GA) technique to optimize the commutation angles of a 2 kW 8/6 switched reluctance machine (SRM). The primary goal is to reduce the well-known drawback of SRMs: the torque ripple. Firstly, the machine was modeled in Matlab /Simulink ® using lookup tables obtained via finite element method (FEM) simulations. Subsequently, the model was used to perform the GA routine aiming to find the optimal phase commutation angles that minimize the torque ripple factor. Notably, the torque performance of the SRM was significantly affected by the commutation angles during the search for the optimal solution. Afterwards, the GA results for four different operation points were verified experimentally through a developed drive platform with digital signal processor-based (DSP) control and an asymmetric bridge converter. As showed by the experiments, the proposed approach was suitable to reduce the torque ripple by more than 50% for one of the evaluated operating points. Furthermore, it was confirmed that the torque ripple mitigation led to acoustic noise improvement.

42 ENGINEERING↗

Packaging Development for a 1200V SiC BiDFET Switch Using Highly Thermally Conductive Organic Epoxy Laminate

A novel 1.2 kV/10A, 4H-SiC monolithic, bidirectional switch has been developed for use in cycloconverter applications to facilitate high-frequency direct AC-to-AC power conversion and enables new power converter topologies. A new packaging solution, utilizing a 100 µm flexible polyimide organic laminate substrate is developed to mitigate thermo-mechanical stress during power cycling and enable smaller form factor and lower cost. Multiphysics simulations and static tests were conducted to show performance characterization of the module and compare it against metallic substrates. A new organic laminate epoxy resin composite dielectric (ERCD) is also evaluated for superior thermal performance and shows 63% reduction in junction to case resistance compared to DBC substrates.

Silicon Carbide, Bi-directional switch, BiDFET, MO↗

Photoconductive Switch with High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond

To evaluate nitrogen-doped diamond as a candidate for Photoconductive Semiconductor Switches (PCSS) triggered in the sub-bandgap visible range, we have fabricated and tested diamond PCSS from a set of diamond grades of varying nitrogen concentration. The nitrogen-doped diamond PCSS have higher responsivity than other diamond optoelectronic devices in the visible range. We present a novel demonstration of sub-bandgap triggered diamond PCSS, which when scaled to higher voltage, can compete with and even surpass performance of existing ultraviolet-triggered diamond PCSS. This work suggests that nitrogen-doped diamond is a promising candidate for high-power, fast optoelectronic devices.

36 MATERIALS SCIENCE↗

High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel

Laterally configured diamond photoconductive semiconductor switches (PCSS) with a buried, metallic p+ current channel are reported. Above bandgap ( λ ≤ 226 nm) optical triggering enables responsivity of over 130 mA/W. The use of low-impurity semi-insulating diamond as an active absorption layer enables fast rise and fall times (~2 ns) and on/off ratios greater than 10 11 . The PCSS excited with a laser energy of 20 nJ per pulse passes a high current density (44 A/cm) under a DC bias of 60 V, thanks to the buried metallic p+ current channel. The reported devices promise high current carrying capacity without the need for filamenting while leveraging the excellent optical, electronic, and thermal properties of diamond.

42 ENGINEERING↗

Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.

42 ENGINEERING↗