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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,459 records · Page 81
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Fixed-node diffusion Monte Carlo potential energy curve of the fluorine molecule F{sub 2} using selected configuration interaction trial wavefunctions

The potential energy curve of the F{sub 2} molecule is calculated with Fixed-Node Diffusion Monte Carlo (FN-DMC) using Configuration Interaction (CI)-type trial wavefunctions. To keep the number of determinants reasonable and thus make FN-DMC calculations feasible in practice, the CI expansion is restricted to those determinants that contribute the most to the total energy. The selection of the determinants is made using the CIPSI approach (Configuration Interaction using a Perturbative Selection made Iteratively). The trial wavefunction used in FN-DMC is directly issued from the deterministic CI program; no Jastrow factor is used and no preliminary multi-parameter stochastic optimization of the trial wavefunction is performed. The nodes of CIPSI wavefunctions are found to reduce significantly the fixed-node error and to be systematically improved upon increasing the number of selected determinants. To reduce the non-parallelism error of the potential energy curve, a scheme based on the use of a R-dependent number of determinants is introduced. Using Dunning’s cc-pVDZ basis set, the FN-DMC energy curve of F{sub 2} is found to be of a quality similar to that obtained with full configuration interaction/cc-pVQZ.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Ab initio study of structural stability and electronic properties of Ti{sub 1-x}Mg{sub x}Cr{sub 2} and TiMg{sub x}Cr{sub 2-x} laves phase

The structural stability and electronic properties of TiMgCr{sub 2} laves phase have been calculated and compared. It is found that Mg prefer to substitutes titanium than chromium. The values of entalpies of formation show that Ti{sub 1-x}Mg{sub x}Cr{sub 2} may exist for only one concentration x=0.125 and the more favorable alloy is Ti{sub 0.875}Mg{sub 0.125}Cr{sub 2}. For TiCr{sub 2}, the optimized structural parameters were in good agreement with experimental values, while for TiMgCr{sub 2}, there is not experimental data. The electronic densities of states (DOS) are given and the nature of bonds are also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Physical mechanisms of SiN{sub x} layer structuring with ultrafast lasers by direct and confined laser ablation

In the production process of silicon microelectronic devices and high efficiency silicon solar cells, local contact openings in thin dielectric layers are required. Instead of photolithography, these openings can be selectively structured with ultra-short laser pulses by confined laser ablation in a fast and efficient lift off production step. Thereby, the ultrafast laser pulse is transmitted by the dielectric layer and absorbed at the substrate surface leading to a selective layer removal in the nanosecond time domain. Thermal damage in the substrate due to absorption is an unwanted side effect. The aim of this work is to obtain a deeper understanding of the physical laser-material interaction with the goal of finding a damage-free ablation mechanism. For this, thin silicon nitride (SiN{sub x}) layers on planar silicon (Si) wafers are processed with infrared fs-laser pulses. Two ablation types can be distinguished: The known confined ablation at fluences below 300 mJ/cm{sup 2} and a combined partial confined and partial direct ablation at higher fluences. The partial direct ablation process is caused by nonlinear absorption in the SiN{sub x} layer in the center of the applied Gaussian shaped laser pulses. Pump-probe investigations of the central area show ultra-fast reflectivity changes typical for direct laser ablation. Transmission electron microscopy results demonstrate that the Si surface under the remaining SiN{sub x} island is not damaged by the laser ablation process. At optimized process parameters, the method of direct laser ablation could be a good candidate for damage-free selective structuring of dielectric layers on absorbing substrates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Preparation of hydroxyapatite nanoparticles by sol-gel method with optimum processing parameters

Many studies have been carried out in order to prepare hydroxyapatite (HAp) by various methods. In this study, we focused on the preparation of HAp nanoparticles by using sol-gel technique in which few parameters are optimized which were stirring rate, aging time and sintering temperature. HAp nanoparticles were prepared by using precursors of calcium nitrate tetrahydrate, Ca(NO{sub 3}){sub 2}.4H{sub 2}O and phosphorous pentoxide, P{sub 2}O{sub 5}. Both precursors are mixed in ethanol respectively before they were mixed together in which it formed a stable sol. Fourier transform infrared (FTIR), X-ray diffraction (XRD) and Scanning electron microscopy (SEM) were used for its characterization in terms of functional group, phase composition, crystallite size and morphology of the nanoparticles produced. FTIR spectra showed that the functional groups that present in all five samples were corresponding to the formation of HAp. Besides, XRD shows that only one phase was formed which was hydroxyapatite. Meanwhile, SEM shows that the small particles combine together to form agglomeration.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Elastic anisotropy, vibrational, and thermodynamic properties of U{sub 2}Ti intermetallic compound with AlB{sub 2}-type structure under high pressure up to 100 GPa

Structural, elastic anisotropy, dynamical, and thermodynamic properties of U{sub 2}Ti have been studied by employing density functional theory and density functional perturbative theory. The optimized lattice parameters a, c, unit volume V, bulk modulus B, and bond lengths d{sub U-U}, d{sub U-Ti} of U{sub 2}Ti are in favorable agreement with the available experimental data and other theoretical values. The elastic constants under pressure were obtained using “energy-strain” method. The polycrystalline modulus, Poisson's ratio, brittle/ductile characteristics, Debye temperature and the integration of elastic wave velocities over different directions, and hardness under pressure are also evaluated successfully. The anisotropy of the directional bulk modulus and the Young's modulus is systematically predicted for the first time. It turns out that U{sub 2}Ti should be stabilized mechanically up to 100 GPa, this compound just possesses slightly elastic anisotropy at zero pressure; however, the anisotropy becomes more and more significant with the increasing pressure. In particular, the phonon dispersion curves and phonon density of state under pressure are reported for the first time. The Raman and infrared-active phonon modes at Γ point are further assigned. Our results indicate that U{sub 2}Ti is also stable dynamically up to 100 GPa. Additionally, within the calculated phonon density of states, the thermodynamic properties are predicted.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model—based on a set of coupled reaction-diffusion equations, one for each facet in the system—accounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature-, concentration-, and temporal-dependence of AlGaAs nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of In{sub 0.12}Ga{sub 0.88}As quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of In{sub 0.25}Ga{sub 0.75}As nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

The CONTIN algorithm and its application to determine the size distribution of microgel suspensions

We review a powerful regularization method, known as CONTIN, for obtaining the size distribution of colloidal suspensions from dynamic light scattering data. We show that together with the so-called L-curve criterion for selecting the optimal regularization parameter, the method correctly describes the average size and size distribution of microgel suspensions independently characterized using small-angle neutron scattering. In contrast, we find that when using the default regularization process, where the regularizer is selected via the “probability to reject” method, the results are not as satisfactory.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In{sub 1−x}Ga{sub x}As channel capping layer

In this work, we study characteristics of 14-nm-gate InGaAs-based trigate MOSFET (metal-oxide-semiconductor field effect transistor) devices with a channel capping layer. The impacts of thickness and gallium (Ga) concentration of the channel capping layer on the device characteristic are firstly simulated and optimized by using three-dimensional quantum-mechanically corrected device simulation. Devices with In{sub 1−x}Ga{sub x}As/In{sub 0.53}Ga{sub 0.47}As channels have the large driving current owing to small energy band gap and low alloy scattering at the channel surface. By simultaneously considering various physical and switching properties, a 4-nm-thick In{sub 0.68}Ga{sub 0.32}As channel capping layer can be adopted for advanced applications. Under the optimized channel parameters, we further examine the effects of channel fin angle and the work-function fluctuation (WKF) resulting from nano-sized metal grains of NiSi gate on the characteristic degradation and variability. To maintain the device characteristics and achieve the minimal variation induced by WKF, the physical findings of this study indicate a critical channel fin angle of 85{sup o} is needed for the device with an averaged grain size of NiSi below 4x4 nm{sup 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Constant-complexity stochastic simulation algorithm with optimal binning

At the molecular level, biochemical processes are governed by random interactions between reactant molecules, and the dynamics of such systems are inherently stochastic. When the copy numbers of reactants are large, a deterministic description is adequate, but when they are small, such systems are often modeled as continuous-time Markov jump processes that can be described by the chemical master equation. Gillespie’s Stochastic Simulation Algorithm (SSA) generates exact trajectories of these systems, but the amount of computational work required for each step of the original SSA is proportional to the number of reaction channels, leading to computational complexity that scales linearly with the problem size. The original SSA is therefore inefficient for large problems, which has prompted the development of several alternative formulations with improved scaling properties. We describe an exact SSA that uses a table data structure with event time binning to achieve constant computational complexity with respect to the number of reaction channels for weakly coupled reaction networks. We present a novel adaptive binning strategy and discuss optimal algorithm parameters. We compare the computational efficiency of the algorithm to existing methods and demonstrate excellent scaling for large problems. This method is well suited for generating exact trajectories of large weakly coupled models, including those that can be described by the reaction-diffusion master equation that arises from spatially discretized reaction-diffusion processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Model of diffusion-assisted direct laser writing by means of nanopolymerization in the presence of radical quencher

Diffusion-assisted direct laser writing (DA-DLW) by multiphoton polymerization has been recently shown to be one of the most promising methods for the high-resolution 3D nanofabrication [I. Sakellari, et al., ACS Nano 6, 2302 (2012)]. The improvement of the writing spatial resolution has been observed under certain conditions when the mobile radical quencher (polymerization inhibitor) is added to the photosensitive composition. In this work, we present a theoretical study of this method, focusing on the resolution capabilities and optimal writing parameters. The laser beam absorption in the polymerizable composition causes the localized depletion of the quencher molecules. If the quencher depletion is balanced by its diffusion from the outside of the focal volume, the quasi-stationary non-equillibrium concentration spatial profile with zero minimum can be obtained. The polymer is then effectively formed only in the domain where the quencher is depleted. The spatially-distributed quencher, in this case, has the effect similar to that of the vortex beam in STimulated Emission Microscopy (STED)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

We delineate the optimized growth parameter space for high-uniformity catalyst-free InGaAs nanowire (NW) arrays on Si over nearly the entire alloy compositional range using selective area molecular beam epitaxy. Under the required high group-V fluxes and V/III ratios, the respective growth windows shift to higher growth temperatures as the Ga-content x(Ga) is tuned from In-rich to Ga-rich InGaAs NWs. Using correlated x-ray diffraction, transmission electron microscopy, and micro-photoluminescence spectroscopy, we identify structural defects to govern luminescence linewidths in In-rich (x(Ga) < 0.4) and Ga-rich (x(Ga) > 0.6) NWs, whereas limitations at intermediate Ga-content (0.4 < x(Ga) < 0.6) are mainly due to compositional inhomogeneities. Most remarkably, the catalyst-free InGaAs NWs exhibit a characteristic transition in crystal structure from wurtzite to zincblende (ZB) dominated phase near x(Ga) ∼ 0.4 that is further reflected in a cross-over from blue-shifted to red-shifted photoluminescence emission relative to the band edge emission of the bulk ZB InGaAs phase.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

Performance of beryllium targets with full-scale capsules in low-fill 6.72-mm hohlraums on the National Ignition Facility

When used with 1.06-mm beryllium (Be) capsules on the National Ignition Facility, gold hohlraums with the inner diameter of 5.75 mm and helium gas fill density of 1.6 mg/cm 3 exhibit significant drive degradation due to laser energy backscatter (of order 14%–17%) and “missing” X-ray drive energy (about 32% during the main pulse). Also, hard to simulate cross-beam energy transfer (CBET) must be used to control the implosion symmetry. Larger, 6.72-mm hohlraums with fill densities ≤0.6 mg/cm 3 generally offer improved drive efficiency, reduced hot-electron preheat, and better control of the implosion symmetry without CBET. Recently, we carried out an exploratory campaign to evaluate performance of 1.06-mm Be capsules in such hohlraums and determine optimal hohlraum parameters. Specifically, we performed in this paper a hohlraum fill-density scan with a three-shock, 9.5-ns laser pulse and found that an appropriate axial laser repointing and azimuthal outer-quad splitting resulted in significantly improved hohlraum energetics at fill densities ≤0.3 mg/cm 3 (with backscattered and “missing” energies being of about 5% and 23% of the total laser energy, respectively). The capsule shape at stagnation was slightly oblate and improved with lowering the fill density. We also performed an implosion with a lower-picket, 12.6-ns pulse at the hohlraum fill density of 0.15 mg/cm 3 to observe comparable hohlraum energetics (about 3% of backscattered and 27% of “missing” energy) but an even more oblate implosion shape. Finally, achieving symmetric implosions of 1.06-mm Be capsules in low-fill, 6.72-mm gold hohlraums with reasonably low-adiabat pulses may not be feasible. However, symmetric implosions have recently been successfully demonstrated in such hohlraums with 0.8-mm Be capsules.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Accurate and balanced anisotropic Gaussian type orbital basis sets for atoms in strong magnetic fields

In high magnetic field calculations, anisotropic Gaussian type orbital (AGTO) basis functions are capable of reconciling the competing demands of the spherically symmetric Coulombic interaction and cylindrical magnetic (B field) confinement. However, the best available a priori procedure for composing highly accurate AGTO sets for atoms in a strong B field [W. Zhu et al., Phys. Rev. A 90, 022504 (2014)] yields very large basis sets. Their size is problematical for use in any calculation with unfavorable computational cost scaling. Here we provide an alternative constructive procedure. It is based upon analysis of the underlying physics of atoms in B fields that allow identification of several principles for the construction of AGTO basis sets. Aided by numerical optimization and parameter fitting, followed by fine tuning of fitting parameters, we devise formulae for generating accurate AGTO basis sets in an arbitrary B field. For the hydrogen iso-electronic sequence, a set depends on B field strength, nuclear charge, and orbital quantum numbers. For multi-electron systems, the basis set formulae also include adjustment to account for orbital occupations. Tests of the new basis sets for atoms H through C (1 ≤ Z ≤ 6) and ions Li+, Be+, and B+, in a wide B field range (0 ≤ B ≤ 2000 a.u.), show an accuracy better than a few μhartree for single-electron systems and a few hundredths to a few mHs for multi-electron atoms. The relative errors are similar for different atoms and ions in a large B field range, from a few to a couple of tens of millionths, thereby confirming rather uniform accuracy across the nuclear charge Z and B field strength values. Residual basis set errors are two to three orders of magnitude smaller than the electronic correlation energies in multi-electron atoms, a signal of the usefulness of the new AGTO basis sets in correlated wavefunction or density functional calculations for atomic and molecular systems in an external strong B field

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Spatial symmetry breaking in single-frequency CCP discharge with transverse magnetic field

An independent control of the flux and energy of ions impacting on an object immersed in a plasma is often desirable for many industrial processes such as microelectronics manufacturing. We demonstrate that a simultaneous control of these quantities is possible by a suitable choice of a static magnetic field applied parallel to the plane electrodes in a standard single frequency capacitively coupled plasma device. Our particle-in-cell simulations show a 60% reduction in the sheath width (that improves control of ion energy) and a fourfold increase in the ion flux at the electrode as a consequence of the altered ion and electron dynamics due to the ambient magnetic field. A detailed analysis of the particle dynamics is presented, and the optimized operating parameters of the device are discussed. In conclusion, the present technique offers a simple and attractive alternative to conventional dual frequency based devices that often suffer from undesirable limitations arising from frequency coupling and electromagnetic effects.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Benchmarking and validation of global model code for negative hydrogen ion sources

Benchmarking and validation are prerequisites for using simulation codes as predictive tools. In this work, we have developed a Global Model for Negative Hydrogen Ion Source (GMNHIS) and performed benchmarking of the GMNHIS against another independently developed code, Global Enhanced Vibrational Kinetic Model (GEVKM). This is the first study to propose a quite comprehensive benchmarking test of this kind for models of negative hydrogen ion sources (NHIS), and excellent agreements have been achieved for collisional energy loss per electron-ion pair created, electron number density, electron temperature, densities of H$^{+}_{3}$ and H$^{+}_{2}$ ions, and densities of H(n = 1–3) atoms. Very small discrepancies in number densities of H - ions and H + ions, as well as the vibrational distribution function of hydrogen molecules, can be attributed to the differences in the chemical reactions datasets. The GEVKM includes additional chemical reactions that are more important at high pressures. Moreover, we validated the GMNHIS against experimental data obtained in an electron cyclotron resonance discharge used for H - production. The model qualitatively (and even quantitatively for certain conditions) reproduces the experimental H - number density. The H - number density as a function of pressure first increases at pressures below 1.6 Pa and then saturates for higher pressures. This dependence was analyzed by evaluating contributions from different reaction pathways to the creation and loss of the H - ions. The developed codes can be used for predicting the H - production, improving the performance of NHIS, and ultimately optimizing the parameters of negative ion beams for fusion reactors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Chemical substitution induced half-metallicity in CrMnSb (1– x ) P x

Half-metallic Heusler alloys have been intensively studied in recent years due to their potential applications in spin-based devices, e.g., in magnetic tunnel junctions. Yet, their properties may be very sensitive to the choice of the substrates, i.e., to the epitaxial strain and interface properties. Here, we report the results of our computational work on the half-Heusler compound CrMnSb (1–x) P x . In particular, we demonstrate that the parent compound CrMnSb is close to a half-metallic material at the optimized lattice parameter, with the onset of the half-metallic bandgap a few meV above the Fermi energy. Moreover, although it undergoes a half-metallic transition under a uniform compression of ~1.5%, such a transition is absent under epitaxial strain. At the same time, we show that a half-metallic transition could be induced by a chemical substitution of Sb with P, which results in a volume reduction of the unit cell. In particular, 50% substitution of Sb with P leads to a robust half-metallicity in CrMnSb (1–x) P x , with 100% spin polarization being retained at a large range of epitaxial strain. Furthermore, our results indicate that CrMnSb0.5P0.5 could be grown on different types of substrates, e.g., GaAs, without its electronic properties being detrimentally affected by biaxial strain. In addition, CrMnSb 0.5 P 0.5 exhibits a fully compensated ferrimagnetic alignment, which could be potentially useful in applications where stray magnetic fields are undesirable.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Absorption of relativistic multi-picosecond laser pulses in wire arrays

We study the interaction of intense multi-picosecond laser pulses with arrays of carbon wires attached to solid substrates. Here, we find that laser absorption in wire arrays resembles that in flat targets with very large uniform plasma density gradients. Performing two-dimensional particle-in-cell simulations, we optimize target parameters like wire thickness and -distance for energy absorption of a 2picosecond laser pulse with a large focal spot; this has implications for x-ray- and charged particle source development.

43 PARTICLE ACCELERATORS↗